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公开(公告)号：US5471494A
公开(公告)日：1995-11-28
申请号：US254079
申请日：1994-06-06
申请人： Hiroshi Mataki , Satoshi Uchida , Hajime Sakiyama
发明人： Hiroshi Mataki , Satoshi Uchida , Hajime Sakiyama
CPC分类号： H01S5/10 , B82Y20/00 , H01S5/0658 , H01S5/3432
摘要： A method for selecting a semiconductor laser is provided which contributes to improved productivity of a highly reliable semiconductor laser of prolonged lifetime, and which includes the steps of: (a) measuring highest peak intensity, Ia, and next highest peak intensity, Ib, of an interference fringes pattern of laser radiation of each semiconductor laser using an interferometer to find a damping ratio of visibility of the interference fringes pattern, .gamma.=Ib/Ia; and (b) selecting a semiconductor exhibiting self-pulsation by selecting a semiconductor laser which emits laser radiation whose damping ratio of visibility, .gamma., is 0.5 or less.
摘要翻译： 提供一种用于选择半导体激光器的方法，其有助于提高长寿命的高度可靠的半导体激光器的生产率，并且其包括以下步骤：（a）测量最高峰值强度Ia和下一个最高峰值强度Ib 使用干涉仪的每个半导体激光器的激光辐射的干涉条纹图案来找出干涉条纹图案的可见度的阻尼比，γ= Ib / Ia; 以及（b）通过选择发出其可见度的阻尼比（gamma）为0.5以下的激光辐射的半导体激光器来选择呈现自脉动的半导体。
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公开(公告)号：US5475699A
公开(公告)日：1995-12-12
申请号：US255704
申请日：1994-06-07
申请人： Hajime Sakiyama , Hiroshi Mataki
发明人： Hajime Sakiyama , Hiroshi Mataki
CPC分类号： H01S5/0014 , H01S5/06226 , H01S5/0658
摘要： A method for selecting a semiconductor laser exhibiting a desired relaxation oscillation frequency, including the steps of: (a) finding a correlation between a visibility of interference fringes of laser light generated by a sampled semiconductor laser and a relaxation oscillation frequency of the sampled semiconductor laser; and (b) measuring a visibility of interference fringes of laser light generated by each of semiconductor lasers to be subjected to selection and finding a relaxation oscillation frequency of that laser from the visibility thus measured with use of the correlation. This method is capable selecting semiconductor lasers exhibiting optimal high speed response characteristics for optical communications with less cost, avoiding a decrease in productivity for such lasers, and contributing to mass productivity therefor.
摘要翻译： 一种选择具有期望的弛豫振荡频率的半导体激光器的方法，包括以下步骤：（a）找到由采样的半导体激光器产生的激光的干涉条纹的可见度与采样的半导体激光器的弛豫振荡频率之间的相关性 ; 以及（b）测量由要进行选择的每个半导体激光器产生的激光的干涉条纹的可见度，并且从利用相关性测量的可见度来确定该激光器的弛豫振荡频率。 该方法能够以较少的成本选择表现出用于光通信的最佳高速响应特性的半导体激光器，避免了这种激光器的生产率的降低，并且有助于其大规模生产。
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公开(公告)号：US5153148A
公开(公告)日：1992-10-06
申请号：US605095
申请日：1990-10-30
申请人： Hajime Sakiyama , Haruo Tanaka , Masato Mushiage
发明人： Hajime Sakiyama , Haruo Tanaka , Masato Mushiage
CPC分类号： H01S5/32 , H01L33/0062 , H01S5/2231 , H01S5/3211 , H01S5/32308 , Y10S148/071 , Y10S148/094 , Y10S148/095
摘要： The invention is directed to a semiconductor laser wherein the first embodiment is characterized in that the first upper portion cladding layer is assumed to be a double layer construction, the upper layer portion is assumed to be higher in carrier concentration than the lower layer portion, the series resistance component is restrained, so that the sequential direction voltage V.sub.F may be lowered without damaging the other characteristics such as oscillation start current I th and so on.
摘要翻译： 本发明涉及一种半导体激光器，其中第一实施例的特征在于，第一上部包层被认为是双层结构，假设上层部分的载流子浓度比下层部分高， 串联电阻分量被抑制，从而可以降低顺序方向电压VF而不损害诸如振荡起始电流I th等的其它特性。
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公开(公告)号：US4999841A
公开(公告)日：1991-03-12
申请号：US469248
申请日：1990-01-24
申请人： Hajime Sakiyama , Haruo Tanaka , Masato Mushiage
发明人： Hajime Sakiyama , Haruo Tanaka , Masato Mushiage
CPC分类号： H01S5/32 , H01L33/0062 , H01S5/2231 , H01S5/3211 , H01S5/32308 , Y10S148/071 , Y10S148/094 , Y10S148/095
摘要： The invention is directed to a semiconductor laser wherein the first embodiment is characterized in that the first upper portion cladding layer is assumed to be a double layer construction, the upper layer portion is assumed to be higher in carrier concentration than the lower layer portion, the series resistance component is restrained, so that the sequential direction voltage V.sub.F may be lowered without damaging the other characteristics such as oscillation start current I th and so on.
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