摘要:
In order to isolate and purify an endohedral fullerene, a solvent washing was performed using toluene to concentrate the endohedral fullerene in a residual, but endohedral fullerene could not be efficiently purified because impurities other than the endohedral fullerene could not be sufficiently removed. Thus, the endohedral fullerene is isolated and purified by using a solvent such as chloronaphthalene or tetralin having a high solubility for the endohedral fullerene and concentrating the endohedral fullerene in the solvent. The endohedral fullerene isolated and purified by solvent extraction has a cluster structure where the endohedral fullerene is surrounded with empty fullerenes. Thus, this endohedral fullerene is highly stable and is a useful material applicable to various fields such as medical care and electronics.
摘要:
In order to isolate and purify an endohedral fullerene, a solvent washing was performed using toluene to concentrate the endohedral fullerene in a residual, but endohedral fullerene could not be efficiently purified because impurities other than the endohedral fullerene could not be sufficiently removed. Thus, the endohedral fullerene is isolated and purified by using a solvent such as chloronaphthalene or tetralin having a high solubility for the endohedral fullerene and concentrating the endohedral fullerene in the solvent. The endohedral fullerene isolated and purified by solvent extraction has a cluster structure where the endohedral fullerene is surrounded with empty fullerenes. Thus, this endohedral fullerene is highly stable and is a useful material applicable to various fields such as medical care and electronics.
摘要:
A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.
摘要:
A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.
摘要:
A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.
摘要:
Provided is a hole-blocking layer which has excellent basic characteristics such as high photoelectric conversion efficiency, while exhibiting excellent productivity. The hole-blocking layer is produced by a process that has a step of bringing an aqueous solution containing hydrogen peroxide and titanium (IV) oxysulfate into contact with the surface of a member on which the hole-blocking layer is to be formed, and holding the contact between the aqueous solution and the member at 50 to 120° C., so that an amorphous titanium oxide precursor precipitates on the surface of the member; and a step of drying the amorphous titanium oxide precursor that has precipitated on the member.
摘要:
Provided is a hole-blocking layer which has excellent basic characteristics such as high photoelectric conversion efficiency, while exhibiting excellent productivity. The hole-blocking layer is produced by a process that has a step of bringing an aqueous solution containing hydrogen peroxide and titanium (IV) oxysulfate into contact with the surface of a member on which the hole-blocking layer is to be formed, and holding the contact between the aqueous solution and the member at 50 to 120° C., so that an amorphous titanium oxide precursor precipitates on the surface of the member; and a step of drying the amorphous titanium oxide precursor that has precipitated on the member.
摘要:
A device and a method capable of producing induction fullerene with high yield are provided. Nitrogen gas being an object to be induced is introduced into a plasma flow producing chamber and a high-temperature flow forming chamber to form a high-temperature plasma flow consisting of nitrogen ions and electrons. A negative voltage is applied to a grid 105 to keep low electron energy in the high-temperature plasma flow. Then by making electrons collide with fullerene introduced from a fullerene sublimating oven 107, electrons are bonded to the fullerene and thereby the fullerene is ionized. A recovering cylinder 112 is disposed in an induction fullerene accumulating chamber so as to enclose a plasma flow. In this fullerene accumulating chamber, induction fullerene such as nitrogen-substitution hetero fullerene and nitrogen-included fullerene is produced and deposited in the recovering chamber 112.
摘要:
Fullerenes are a novel material that has been expected to serve as a promising material in the construction of organic devices. However, the electric conductivity of fullerenes, which has been, reported heretofore spreads over a wide range including values corresponding to insulators as well as those corresponding to semiconductors. The present invention makes it possible to improve the conductivity of fullerenes highly reproducibly by heating the fullerenes at a specified temperature in an inert gas which is flowed under a specified condition, that is, by controlling the concentration of impurities, particularly oxygen and water adsorbed to the fullerenes.
摘要:
Provided are a process for removing an alkali metal from a sooty residue by a easy and safe method and a process for production and purification in high purity by preliminarily enhancing the content rate of alkali metal doped fullerenes utilizing a certain organic solvent as the separator. The alkali metal that doesn't react with fullerenes and compounds thereof are removed by immersing the sooty residue prepared by the plasma method or the arc discharge method in aqueous solvent and stirring it (S100), and are collected as residue. The residue is immersed in a separator, for example, toluene (S101) and stirring is carried out (S102). Then, centrifugal separation and the like are carried out to separate the solution and the residue (S103). The content rate of the alkali metal doped fullerenes in the residue are preliminarily enhanced by repeatedly carrying out the steps S101 to S103 for the residue. The alkali metal doped fullerenes can be purified in high purity and produced without complicated operations by applying liquid chromatography to the residue in which the content rate of the alkali metal doped fullerenes is enhanced (S107).