-
公开(公告)号：US06992123B2
公开(公告)日：2006-01-31
申请号：US10700554
申请日：2003-11-05
申请人： Hiroshi Shiho , Hiromi Aoi , Kou Hasegawa , Nobuo Kawahashi
发明人： Hiroshi Shiho , Hiromi Aoi , Kou Hasegawa , Nobuo Kawahashi
CPC分类号： B24B37/24 , B24D3/32 , B24D3/344 , C09K3/1436
摘要： A polishing pad of the present invention contains a water-insoluble matrix material comprising a crosslinked polymer such as a crosslinked 1,2-polybutadiene and water-soluble particles dispersed in the material, such as saccharides. The solubility of the water-soluble particles in water is 0.1 to 10 wt % at 25° C., and the amount of water-soluble particles eluted from the pad when the pad is immersed in water is 0.05 to 50 wt % at 25° C. Further, in the polishing pad of the present invention, the solubility of the water-soluble particles in water is 0.1 to 10 wt % at 25° C. at a pH of 3 to 11, and solubility thereof in water at 25° C. at a pH of 3 to 11 is within ±50% of solubility thereof in water at 25° C. at a pH of 7. In addition, the water-soluble particles contain an amino group, an epoxy group, an isocyanurate group, and the like. This polishing pad has good slurry retainability even if using slurries different in pH and also has excellent polishing properties such as a polishing rate and planarity.
摘要翻译： 本发明的抛光垫含有包含交联聚合物如交联的1,2-聚丁二烯的水不溶性基质材料和分散在该物质中的水溶性颗粒，例如糖类。 水溶性颗粒在水中的溶解度在25℃为0.1〜10重量％，当将垫浸入水中时，从垫中洗脱的水溶性颗粒的量在25℃为0.05〜50重量％ 此外，在本发明的研磨垫中，水溶性颗粒在水中的溶解度在25℃，pH为3〜11时为0.1〜10重量％，在25℃下在水中的溶解度 在pH为3〜11的条件下，在pH为7的情况下，25℃下在水中的溶解度的±50％以内。另外，水溶性粒子含有氨基，环氧基，异氰脲酸酯基 ，等等。 该抛光垫即使使用pH不同的浆料也具有良好的浆料保持性，并且还具有抛光速度和平面性等优异的抛光性能。
-
2.发明授权公开(公告)号：US07183213B2
公开(公告)日：2007-02-27
申请号：US10892096
申请日：2004-07-16
申请人： Hiroshi Shiho , Yukio Hosaka , Kou Hasegawa , Nobuo Kawahashi
发明人： Hiroshi Shiho , Yukio Hosaka , Kou Hasegawa , Nobuo Kawahashi
IPC分类号： H01L21/302
CPC分类号： B24B37/205 , B24B37/013
摘要： A chemical mechanical polishing pad. The pad contains a water-insoluble matrix and Water-soluble particles dispersed in the water-insoluble matrix material and has a polishing surface and a non-polishing surface on a side opposite to the polishing surface. The pad has a light transmitting area which optically communicates from the polishing surface to the non-polishing surface. The non-polishing surface of the light transmitting area has a surface roughness (Ra) of 10 pm or less.
摘要翻译： 化学机械抛光垫。 垫包含分散在水不溶性基质材料中的水不溶性基质和水溶性颗粒，并且在与抛光表面相对的一侧上具有抛光表面和非抛光表面。 垫具有从抛光表面与非抛光表面光学连通的透光区域。 透光区域的非抛光面的表面粗糙度（Ra）为10μm以下。
-
3.发明申请Chemical mechanical polishing pad, production method thereof, and chemical mechanical polishing process 审中-公开化学机械抛光垫，其生产方法和化学机械抛光工艺公开(公告)号：US20050222336A1
公开(公告)日：2005-10-06
申请号：US11050730
申请日：2005-02-07
申请人： Takahiro Okamoto , Hiroyuki Miyauchi , Kouji Kawahara , Hiroshi Shiho , Kou Hasegawa , Nobuo Kawahashi
发明人： Takahiro Okamoto , Hiroyuki Miyauchi , Kouji Kawahara , Hiroshi Shiho , Kou Hasegawa , Nobuo Kawahashi
摘要： A chemical mechanical polishing pad comprising a water-insoluble matrix which comprises (A) a styrene polymer and (B) a diene polymer. A method for producing the above chemical mechanical polishing pad, the method comprising the steps of preparing a composition comprising (A) a styrene polymer, (B) a diene polymer and (C) a crosslinking agent, shaping the above composition into a predetermined shape, and heating the composition during or after shaping to cure it. A chemical mechanical polishing process which comprises polishing a surface to be polished of an object to be polished by use of the chemical mechanical polishing pad. According to the present invention, it is possible to provide a chemical mechanical polishing pad which can be suitably applied to polishing of metal film and insulation film, particularly to an STI technique, provides a flat polished surface, can provide a high polishing rate and has a satisfactory useful life.
摘要翻译： 一种包含水不溶性基质的化学机械抛光垫，其包含（A）苯乙烯聚合物和（B）二烯聚合物。 一种制备上述化学机械抛光垫的方法，所述方法包括以下步骤：制备包含（A）苯乙烯聚合物，（B）二烯聚合物和（C）交联剂的组合物，将上述组合物成形为预定形状 并且在成形期间或之后加热组合物以使其固化。 一种化学机械抛光工艺，其包括通过使用化学机械抛光垫抛光待抛光物体的待抛光表面。 根据本发明，可以提供一种适用于金属膜和绝缘膜的抛光的化学机械抛光垫，特别是对于STI技术，提供平坦的抛光表面，可以提供高抛光速率并具有 令人满意的使用寿命。
-
4.发明申请公开(公告)号：US20050014376A1
公开(公告)日：2005-01-20
申请号：US10892096
申请日：2004-07-16
申请人： Hiroshi Shiho , Yukio Hosaka , Kou Hasegawa , Nobuo Kawahashi
发明人： Hiroshi Shiho , Yukio Hosaka , Kou Hasegawa , Nobuo Kawahashi
IPC分类号： B24B37/013 , B24B37/20 , H01L21/302 , H01L21/461
CPC分类号： B24B37/205 , B24B37/013
摘要： A chemical mechanical polishing pad. The pad contains a water-insoluble matrix and water-soluble particles dispersed in the water-insoluble matrix material and has a polishing surface and a non-polishing surface on a side opposite to the polishing surface. The pad has a light transmitting area which optically communicates from the polishing surface to the non-polishing surface. The non-polishing surface of the light transmitting area has a surface roughness (Ra) of 10 μm or less.
摘要翻译： 化学机械抛光垫。 垫包含分散在水不溶性基质材料中的水不溶性基质和水溶性颗粒，并且在与抛光表面相对的一侧上具有抛光表面和非抛光表面。 垫具有从抛光表面与非抛光表面光学连通的透光区域。 透光区域的非抛光表面的表面粗糙度（Ra）为10μm以下。
-
5.发明授权Polishing pad for semiconductor wafer, polishing multilayered body for semiconductor wafer having same, and method for polishing semiconductor wafer 有权用于半导体晶片的抛光垫，用于其半导体晶片的抛光多层体，以及用于研磨半导体晶片的方法公开(公告)号：US07323415B2
公开(公告)日：2008-01-29
申请号：US10529742
申请日：2004-04-23
申请人： Hiroshi Shiho , Yukio Hosaka , Kou Hasegawa , Nobuo Kawahashi
发明人： Hiroshi Shiho , Yukio Hosaka , Kou Hasegawa , Nobuo Kawahashi
IPC分类号： H01L21/302
CPC分类号： B24B37/205
摘要： An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoints detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the present invention comprises a substrate 11 for a polishing pad provided with a through hole penetrating from surface to back, a light transmitting part 12 fitted in the through hole, the light transmitting part comprises a water-insoluble matrix material (1,2-polybutadiene) and a water-soluble particle (β-cyclodextrin) dispersed in the water-insoluble matrix material, and the water-soluble particle is less than 5% by volume based on 100% by volume of the total amount of the water-insoluble matrix material and the water-soluble particle. In addition, the laminated body for polishing of the present invention comprises a supporting layer on a backside of the polishing pad. These polishing pad and laminated body for polishing can comprise a fixing layer 13 on a backside.
摘要翻译： 本发明的目的是提供一种用于半导体晶片的抛光垫和用于抛光其配备的半导体晶片的层叠体，其可以在不降低抛光性能的情况下进行光学终点检测以及半导体的抛光方法 晶圆使用它们。 本发明的抛光垫包括用于抛光垫的基板11，该抛光垫具有从表面向后穿透的通孔，安装在通孔中的透光部12，透光部包括水不溶性基质材料（1 ，2-聚丁二烯）和分散在水不溶性基质材料中的水溶性颗粒（β-环糊精），并且水溶性颗粒的体积百分比小于5体积％ 水不溶性基质材料和水溶性颗粒。 另外，本发明的研磨用层叠体在研磨垫的背面具有支撑层。 这些抛光垫和用于抛光的层压体可以在背面上包括固定层13。
-
公开(公告)号：US06976910B2
公开(公告)日：2005-12-20
申请号：US10849782
申请日：2004-05-21
申请人： Yukio Hosaka , Hiroshi Shiho , Kou Hasegawa , Nobuo Kawahashi
发明人： Yukio Hosaka , Hiroshi Shiho , Kou Hasegawa , Nobuo Kawahashi
CPC分类号： B24B37/26
摘要： A polishing pad comprising a recessed portion in the non-polishing surface. This polishing pad can prevent the surface to be polished of an object from being scratched.
-
公开(公告)号：US20050003749A1
公开(公告)日：2005-01-06
申请号：US10849782
申请日：2004-05-21
申请人： Yukio Hosaka , Hiroshi Shiho , Kou Hasegawa , Nobuo Kawahashi
发明人： Yukio Hosaka , Hiroshi Shiho , Kou Hasegawa , Nobuo Kawahashi
CPC分类号： B24B37/26
摘要： A polishing pad comprising a recessed portion in the non-polishing surface. This polishing pad can prevent the surface to be polished of an object from being scratched.
摘要翻译： 抛光垫，其包括在非抛光表面中的凹陷部分。 该抛光垫可以防止被抛光的表面被划伤。
-
8.发明申请Chemical mechanical polishing pad, manufacturing process thereof and chemical mechanical polishing method for semiconductor wafers 审中-公开化学机械抛光垫，其制造工艺和半导体晶片的化学机械抛光方法公开(公告)号：US20050245171A1
公开(公告)日：2005-11-03
申请号：US11115122
申请日：2005-04-27
申请人： Yukio Hosaka , Hiroshi Shiho , Hiroyuki Miyauchi , Takahiro Okamoto , Kou Hasefawa , Nobuo Kawahashi
发明人： Yukio Hosaka , Hiroshi Shiho , Hiroyuki Miyauchi , Takahiro Okamoto , Kou Hasefawa , Nobuo Kawahashi
CPC分类号： B24B37/04 , B24D18/0009
摘要： There is provided a chemical mechanical polishing pad containing a polishing substrate having a polishing surface and a light-transmitting member fused to the polishing substrate. The sectional form of the light-transmitting member when it is cut with a plane parallel to the polishing surface is elliptic with a value obtained by dividing its long diameter by its short diameter of more than 1. The pad is capable of transmitting end-point detection light without reducing its polishing efficiency in polishing a semiconductor wafer.
摘要翻译： 提供了一种化学机械抛光垫，其包含具有抛光表面的抛光基板和与抛光基板融合的透光部件。 当透光部件被切割成与抛光表面平行的平面时的截面形状是椭圆形的，其值通过将其长度除以其大于1的短直径而获得的值。该焊盘能够传输端点 检测光，而不降低其抛光半导体晶片的抛光效率。
-
公开(公告)号：US07442116B2
公开(公告)日：2008-10-28
申请号：US10978472
申请日：2004-11-02
IPC分类号： B24D11/00
CPC分类号： B24B37/205 , Y10S451/921
摘要： A chemical mechanical polishing pad having a face for polishing an object to be polished, a non-polishing face opposite to the face and a side face for interconnecting these faces and including the pattern of recessed portions which are formed on the non-polishing face and are open to the non-polishing face but not on the side face.
摘要翻译： 一种化学机械抛光垫，其具有用于抛光待抛光物体的面，与该面相反的非抛光面和用于互连这些面的侧面，并且包括形成在非抛光面上的凹部的图案，以及 对非抛光面开放，但不在侧面。
-
10.发明申请Chemical mechanical polishing pad, manufacturing process thereof and chemical mechanical polishing method 审中-公开化学机械抛光垫，其制造工艺和化学机械抛光方法公开(公告)号：US20050239380A1
公开(公告)日：2005-10-27
申请号：US11110728
申请日：2005-04-21
申请人： Yukio Hosaka , Yuuji Shimoyama , Hiroshi Shiho , Nobuo Kawahashi
发明人： Yukio Hosaka , Yuuji Shimoyama , Hiroshi Shiho , Nobuo Kawahashi
CPC分类号： B24B37/04 , B24B37/042
摘要： A chemical mechanical polishing pad having a polishing surface with an arithmetic mean roughness (Ra) of 0.1 to 15 μm, a 10-point height (Rz) of 40 to 150 μm, a core roughness depth (Rk) of 12 to 50 μm and a reduced peak height (Rpk) of 7 to 40 μm, a manufacturing process thereof and a chemical mechanical polishing method. Even when the chemical mechanical polishing of a large-diameter wafer as an object to be polished is carried out by this pad, a polished surface having excellent in-plane uniformity and flatness can be formed.
摘要翻译： 一种化学机械抛光垫，其抛光表面的算术平均粗糙度（Ra）为0.1〜15μm，10点高（Rz）为40〜150μm，芯粗糙度深度（Rk）为12〜50μm， 降低的峰值高度（Rpk）为7至40μm，其制造方法和化学机械抛光方法。 即使通过该垫进行作为被研磨物的大直径晶片的化学机械研磨，也可以形成具有优异的面内均匀性，平坦性的研磨面。
-
-
-
-
-
-
-
-
-
搜索结果
39 条记录 (耗时 0.023 秒)
