公开(公告)号：US4280844A

公开(公告)日：1981-07-28

申请号：US89032

申请日：1979-10-29

申请人： Hiroshi Shikano ,  Toshihiko Iwata

发明人： Hiroshi Shikano ,  Toshihiko Iwata

IPC分类号： B22D41/02 ,  C04B35/00 ,  C04B35/01 ,  C04B35/043 ,  C04B35/101 ,  C04B35/634 ,  C04B35/66 ,  C21C5/44 ,  C04B35/52

CPC分类号： C04B35/63476 ,  C04B35/013 ,  C04B35/043 ,  C04B35/101 ,  C04B35/66

摘要： A spalling- and corrosion-resistance refractory which comprises the composition of refractory material consisting of at least one refractory inorganic substance, 1-30% by weight of low melting point metal powder such as aluminum powder having a particle size below 0.5 mm and 2-15% by weight of thermo-setting organic binder such as phenol resin based on the total weight of the refractory material, respectively.The spalling- and corrosion-resistance refractory is prepared by admixing the refractory material, aluminum powder and phenol resin binder, kneading and molding the mixture and finally burning the green brick at a temperature below 800.degree. C.

摘要翻译： 一种防剥落耐腐蚀耐火材料，它包括由至少一种耐火无机物质组成的耐火材料组合物，1-30重量％的低熔点金属粉末如粒度低于0.5毫米的铝粉末和2- 相对于耐火材料的总重量，分别为15重量％的热固性有机粘合剂如酚醛树脂。 耐剥离和耐腐蚀的耐火材料是通过混合耐火材料，铝粉和酚醛树脂粘合剂，捏合和成型混合物，最后在低于800℃的温度下烧绿砖来制备的。

公开(公告)号：US07872316B2

公开(公告)日：2011-01-18

申请号：US12119864

申请日：2008-05-13

申请人： Toshihiko Iwata

发明人： Toshihiko Iwata

IPC分类号： H01L29/49 ,  H01L29/51

CPC分类号： H01L29/6659 ,  H01L21/28097 ,  H01L21/28114 ,  H01L29/42376 ,  H01L29/4975 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7833 ,  H01L29/7843

摘要： Disclosed herein is a semiconductor device including a gate insulating film formed over a semiconductor substrate, and a gate electrode formed over the gate insulating film, wherein the gate insulating film is so provided as to protrude from both sides of the gate electrode, and the gate electrode includes a wholly silicided layer.

摘要翻译： 本文公开了一种半导体器件，其包括形成在半导体衬底上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极，其中栅极绝缘膜设置为从栅电极的两侧突出，并且栅极 电极包括完全硅化物层。

公开(公告)号：US20080283974A1

公开(公告)日：2008-11-20

申请号：US12119864

申请日：2008-05-13

申请人： Toshihiko Iwata

发明人： Toshihiko Iwata

IPC分类号： H01L29/51 ,  H01L21/28

CPC分类号： H01L29/6659 ,  H01L21/28097 ,  H01L21/28114 ,  H01L29/42376 ,  H01L29/4975 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7833 ,  H01L29/7843

摘要： Disclosed herein is a semiconductor device including a gate insulating film formed over a semiconductor substrate, and a gate electrode formed over the gate insulating film, wherein the gate insulating film is so provided as to protrude from both sides of the gate electrode, and the gate electrode includes a wholly silicided layer.

摘要翻译： 本文公开了一种半导体器件，其包括形成在半导体衬底上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极，其中栅极绝缘膜设置为从栅电极的两侧突出，并且栅极 电极包括完全硅化物层。