公开(公告)号：US20080204913A1

公开(公告)日：2008-08-28

申请号：US12072751

申请日：2008-02-27

申请人： Hiroshi Umezaki ,  Shinichi Iwasa

发明人： Hiroshi Umezaki ,  Shinichi Iwasa

IPC分类号： G11B27/36

CPC分类号： G11B5/455 ,  G11B27/36

摘要： Embodiments of the present invention provide a magnetic head inspection system having a simple configuration capable of inspecting magnetic heads. According to one embodiment, the magnetic head inspection system comprises an inspection module which is provided with a magnetic disk where servo data including track identifier information are recorded, a spindle motor, a carriage having a mount structure to which a head assembly containing a magnetic head is secured, a voice coil motor and a main circuit section. An inspection circuit section instructs the main circuit section to execute control so as to move the magnetic head to a specific track and perform a certain read write operation by the magnetic head in order to inspect the magnetic head.

摘要翻译： 本发明的实施例提供一种具有能够检查磁头的简单结构的磁头检查系统。 根据一个实施例，磁头检查系统包括检查模块，该检查模块设置有磁盘，其中记录有包括轨道标识符信息的伺服数据，主轴电机，具有安装结构的滑架，包含磁头的磁头组件 音圈电机和主电路部分。 检查电路部分指示主电路部分执行控制，以将磁头移动到特定的磁道，并通过磁头进行一定的读写操作，以检查磁头。

公开(公告)号：US07929255B2

公开(公告)日：2011-04-19

申请号：US12072751

申请日：2008-02-27

申请人： Hiroshi Umezaki ,  Shinichi Iwasa

发明人： Hiroshi Umezaki ,  Shinichi Iwasa

IPC分类号： G11B21/10

CPC分类号： G11B5/455 ,  G11B27/36

摘要： Embodiments of the present invention provide a magnetic head inspection system having a simple configuration capable of inspecting magnetic heads. According to one embodiment, the magnetic head inspection system comprises an inspection module which is provided with a magnetic disk where servo data including track identifier information are recorded, a spindle motor, a carriage having a mount structure to which a head assembly containing a magnetic head is secured, a voice coil motor and a main circuit section. An inspection circuit section instructs the main circuit section to execute control so as to move the magnetic head to a specific track and perform a certain read write operation by the magnetic head in order to inspect the magnetic head.

摘要翻译： 本发明的实施例提供一种具有能够检查磁头的简单结构的磁头检查系统。 根据一个实施例，磁头检查系统包括检查模块，该检查模块设置有磁盘，其中记录有包括轨道标识符信息的伺服数据，主轴电机，具有安装结构的滑架，包含磁头的磁头组件 音圈电机和主电路部分。 检查电路部分指示主电路部分执行控制，以将磁头移动到特定的磁道，并通过磁头进行一定的读写操作，以检查磁头。

公开(公告)号：US07511981B2

公开(公告)日：2009-03-31

申请号：US11876607

申请日：2007-10-22

申请人： Hideo Asano ,  Koji Kitamura ,  Hisatada Miyatake ,  Kohki Noda ,  Toshio Sunaga ,  Hiroshi Umezaki

发明人： Hideo Asano ,  Koji Kitamura ,  Hisatada Miyatake ,  Kohki Noda ,  Toshio Sunaga ,  Hiroshi Umezaki

IPC分类号： G11C5/08

CPC分类号： G11C11/16

摘要： A non-volatile memory device according to one embodiment comprises a plurality of memory cells each comprising a magneto resistive element and a selection transistor; wherein at least some of the memory cells are arranged into a two dimensional array; a first interconnect line extending in a first direction of the memory array and functioning as a gate electrode of a selection transistor included in each memory cell; a second interconnect line extending in the first direction of the memory array; a third interconnect line extending in a second direction; wherein the magneto resistive element of at least some of the memory cells is sandwiched between the second and third interconnect lines, wherein the second interconnect line extends at least partially along all magneto resistive elements in a particular one of the memory cells.

摘要翻译： 根据一个实施例的非易失性存储器件包括多个存储单元，每个存储单元包括磁阻元件和选择晶体管; 其中所述存储器单元中的至少一些被布置成二维阵列; 第一互连线，沿着所述存储器阵列的第一方向延伸并且用作包含在每个存储单元中的选择晶体管的栅电极; 在存储器阵列的第一方向上延伸的第二互连线; 第三互连线，沿第二方向延伸; 其中所述存储器单元中的至少一些的所述磁阻元件夹在所述第二和第三互连线之间，其中所述第二互连线至少部分地沿着所述存储器单元中的特定一个的所有磁阻元件延伸。

公开(公告)号：US06992924B2

公开(公告)日：2006-01-31

申请号：US10680051

申请日：2003-10-07

申请人： Hisatada Miyatake ,  Hiroshi Umezaki ,  Kohji Kitamura ,  Toshio Sunaga ,  Kohki Noda ,  Hideo Asano

发明人： Hisatada Miyatake ,  Hiroshi Umezaki ,  Kohji Kitamura ,  Toshio Sunaga ,  Kohki Noda ,  Hideo Asano

IPC分类号： G11C11/15

CPC分类号： G11C11/16 ,  G11C29/02 ,  G11C29/028 ,  G11C2029/5006

摘要： The invention provides methods and apparatus for for determining and providing optimum write bit line current and write word line current in an MRAM. A single reference potential is used to determine the values of the write line current and the bit line current. In determining the optimal values, asteroid curves representing bit line magnetic fields Hx generated by write bit line current IB and word line magnetic fields Hy generated by write word line current Iw for magnetization are considered, and an asteroid curve ACout is defined outside the asteroid curves of all memory cells taking manufacture variations and design margins into account. A write bit line current and a write word line current are selected such that the write current obtained by adding the write bit line current or currents and the write word line current, or the write power consumed by the bit line or lines and the write word line is minimized. Furthermore, in order to prevent multi-selection, the write bit line current and the write word line current are selected so that they generate a synthetic magnetic field on the curve between calculated points of the asteroid curve ACout.

摘要翻译： 本发明提供了用于在MRAM中确定和提供最佳写入位线电流和写入字线电流的方法和装置。 单个参考电位用于确定写入线电流和位线电流的值。 在确定最佳值时，表示通过写入位线电流I B和字线磁场H SUB生成的位线磁场H 的小行星曲线 考虑了用于磁化的写入字线电流I 产生的小行星曲线AC＆lt; SUB＆gt;被定义在所有存储器单元的小行星曲线之外，其采取制造变化和设计余量 考虑到 选择写位线电流和写字线电流，使得通过将写位线电流或电流和写字线电流相加而获得的写入电流或由位线或线消耗的写入功率和写入字 线最小化。 此外，为了防止多次选择，选择写入位线电流和写入字线电流，使得它们在小行星曲线AC的计算点之间的曲线上产生合成磁场， 。

公开(公告)号：US4704266A

公开(公告)日：1987-11-03

申请号：US872901

申请日：1986-06-11

申请人： Hidekimi Kadokura ,  Hiroshi Umezaki ,  Hideaki Murakami ,  Toshiyuki Mizoe

发明人： Hidekimi Kadokura ,  Hiroshi Umezaki ,  Hideaki Murakami ,  Toshiyuki Mizoe

IPC分类号： C01F7/04 ,  H01M8/02

CPC分类号： C01F7/043 ,  H01M8/0295 ,  Y02P70/56

摘要： A method for producing .gamma.-form lithium aluminate powders usable as a material for an electrolyte tile of molten carbonate fuel cells which comprises mixing aluminum alkoxide with one member selected from the group consisting of the lithium salts of inorganic and organic acids, lithium hydroxide and lithium oxide in the presence of a non-aqueous solvent, carrying out reaction with addition of water of 1.5 to 20 moles (including water of crystallization contained in the lithium compound) based on 1 mole of aluminum alkoxide with stirring, and removing the solvent to obtain a solid matter which is then calcined at a temperature in a range of from 650.degree. C. to 1000.degree. C.

摘要翻译： 一种制造可用作熔融碳酸盐燃料电池的电解质瓦的材料的γ-型铝酸锂粉末的方法，其包括将烷醇铝与选自无机和有机酸的锂盐，氢氧化锂和锂的一种物质混合 氧化物，在非水溶剂存在下，在搅拌下，以1摩尔醇铝水溶液加入1.5〜20摩尔的水（包括锂化合物中所含的结晶水）进行反应，除去溶剂，得到 固体物质，然后在650℃至1000℃的温度下煅烧。

公开(公告)号：US4556582A

公开(公告)日：1985-12-03

申请号：US375180

申请日：1982-05-05

申请人： Ryo Imura ,  Tadashi Ikeda ,  Teruaki Takeuchi ,  Hiroshi Umezaki ,  Ryo Suzuki ,  Yutaka Sugita

发明人： Ryo Imura ,  Tadashi Ikeda ,  Teruaki Takeuchi ,  Hiroshi Umezaki ,  Ryo Suzuki ,  Yutaka Sugita

IPC分类号： G11C11/14 ,  G11C19/08 ,  H01F10/24 ,  H01F41/14 ,  H01F41/34 ,  B05D3/06

CPC分类号： H01F41/14 ,  G11C19/08 ,  H01F10/24 ,  H01F41/34

摘要： A method of fabricating a magnetic bubble memory device is disclosed in which ions are implanted in a desired portion of a surface region in a magnetic bubble film for magnetic bubbles to form a strain layer having a strain of about 1% to about 2.5%, a film is provided on the magnetic bubble film so as to cover the magnetic bubble film with the film and then the magnetic bubble film is annealed under predetermined conditions, thereby providing a practical magnetic bubble memory device having a large bias margin.

摘要翻译： 公开了一种制造磁性气泡存储装置的方法，其中将离子注入用于磁性气泡的磁性气泡膜的表面区域的期望部分中以形成具有约1％至约2.5％的应变的应变层， 在磁性气泡膜上设置膜以覆盖气泡膜，然后在预定条件下对磁性气泡膜进行退火，由此提供具有大的偏置裕度的实用的磁性气泡存储装置。

公开(公告)号：US4415262A

公开(公告)日：1983-11-15

申请号：US340215

申请日：1982-01-18

申请人： Naoki Koyama ,  Youji Maruyama ,  Hiroshi Umezaki ,  Norikazu Tsumita ,  Yutaka Sugita

发明人： Naoki Koyama ,  Youji Maruyama ,  Hiroshi Umezaki ,  Norikazu Tsumita ,  Yutaka Sugita

IPC分类号： G03F1/00 ,  G03F1/54 ,  H01L21/027 ,  H01L21/30 ,  G03B27/28

CPC分类号： H01L21/30 ,  G03F1/50

摘要： A photomask is disclosed which is suitable for use in the one-mask method capable of forming a plurality of patterns with one exposure, and in which an opaque pattern having a predetermined form and a semi-transparent pattern having another predetermined form are formed on a transparent substrate, and the semi-transparent pattern is formed of an opaque film having a large number of fine through holes.

摘要翻译： 公开了一种适合用于能够以一次曝光形成多个图案的单掩模方法的光掩模，其中具有预定形式的不透明图案和具有另一预定形式的半透明图案形成在 透明基板，半透明图案由具有大量细通孔的不透明膜形成。

公开(公告)号：US08125734B2

公开(公告)日：2012-02-28

申请号：US11899605

申请日：2007-09-05

申请人： Hiroshi Umezaki ,  Seiji Nakagawa ,  Yuhsuke Matsumoto ,  Yoshihisa Takeo ,  Gen Oikawa ,  Hiroshi Kamio

发明人： Hiroshi Umezaki ,  Seiji Nakagawa ,  Yuhsuke Matsumoto ,  Yoshihisa Takeo ,  Gen Oikawa ,  Hiroshi Kamio

IPC分类号： G11B5/60 ,  G11B5/31 ,  G11B15/64

CPC分类号： G11B5/4853

摘要： Embodiments of the present invention provide a magnetic slider of which terminals have a sufficiently large process margin for the laser condition in the SBB process. According to one embodiment, a magnetic slider comprises: a read element and a write element; plural wiring lines which are connected to the read element and the write element; a protective film which covers the read element, the write element and the plural-wiring lines; plural slider pads formed on the protective film; and plural studs which respectively connect the slider pads and the wiring lines and are covered by the protective film, wherein each of the slider pads comprises a chromium film, a nickel iron film and a gold film, the nickel iron film is formed between the chromium film and the gold film, and the chromium film is formed between the nickel iron film and one of the studs and is in contact with the protective film.

摘要翻译： 本发明的实施例提供了一种磁性滑块，其端子在SBB过程中具有足够大的处理余量用于激光条件。 根据一个实施例，磁性滑块包括：读取元件和写入元件; 连接到读取元件和写入元件的多个布线; 覆盖读取元件，写入元件和多个布线的保护膜; 形成在保护膜上的多个滑块; 以及分别连接滑块和布线并被保护膜覆盖的多个螺柱，其中每个滑块包括铬膜，镍铁膜和金膜，镍铁膜形成在铬 膜和金膜，并且在镍铁膜和其中一个螺柱之间形成铬膜，并与保护膜接触。

公开(公告)号：US07123498B2

公开(公告)日：2006-10-17

申请号：US10964352

申请日：2004-10-12

申请人： Hisatada Miyatake ,  Kohki Noda ,  Toshio Sunaga ,  Hiroshi Umezaki ,  Hideo Asano ,  Koji Kitamura

发明人： Hisatada Miyatake ,  Kohki Noda ,  Toshio Sunaga ,  Hiroshi Umezaki ,  Hideo Asano ,  Koji Kitamura

IPC分类号： G11C5/06

CPC分类号： G11C11/16

摘要： MRAM has read word lines WLR and write word line WLW extending in the y direction, write/read bit line BLW/R and write bit line BLW extending in the x direction, and the memory cells MC disposed at the points of the intersection of these lines. The memory MC includes sub-cells SC1 and SC2. The sub-cell SC1 includes magneto resistive elements MTJ1 and MTJ2 and a selection transistor Tr1, and the sub-cell SC2 includes magneto resistive elements MTJ3 and MTJ4 and a selection transistor Tr2. The magneto resistive elements MTJ1 and MTJ2 are connected in parallel, and the magneto resistive elements MTJ3 and MTJ4 are also connected in parallel. Further, the sub-cells SC1 and SC2 are connected in series between the write/read bit line BLW/R and the ground.

摘要翻译： MRAM具有在y方向上延伸的字线WLR和写入字线WLW，在x方向上延伸的写入/读取位线BLW / R和写入位线BLW，以及设置在这些交点处的存储单元MC 线条。 存储器MC包括子单元SC 1和SC 2。 子单元SC1包括磁电阻元件MTJ 1和MTJ 2以及选择晶体管Tr 1，子单元SC 2包括磁阻元件MTJ 3和MTJ 4以及选择晶体管Tr 2。 磁电阻元件MTJ 1和MTJ 2并联连接，磁电阻元件MTJ 3和MTJ 4也并联连接。 此外，子单元SC 1和SC 2串联连接在写/读位线BLW / R和地之间。

公开(公告)号：US06639834B2

公开(公告)日：2003-10-28

申请号：US10134101

申请日：2002-04-26

申请人： Toshio Sunaga ,  Hisatada Miyatake ,  Koji Kitamura ,  Hideo Asano ,  Kohki Noda ,  Hiroshi Umezaki

发明人： Toshio Sunaga ,  Hisatada Miyatake ,  Koji Kitamura ,  Hideo Asano ,  Kohki Noda ,  Hiroshi Umezaki

IPC分类号： G11C1604

CPC分类号： G11C11/15 ,  G11C14/0081

摘要： The register disclosed herein includes a register block and a data writing block having non-volatile storage elements which store data output therefrom. The disclosed register further includes a data restoring block for reading data from the non-volatile storage elements. In a disclosed embodiment, the non-volatile storage elements are magnetic tunnel junction (MTJ) elements.