摘要:
A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified position of the object to be exposed to the charged particle beams.
摘要:
A charged-particle beam exposure method which has a stencil mask formed with a several mask patterns, deflects a beam of charged particles to a mask pattern selected from among the several mask patterns and shapes the beam, and performs wafer exposure by deflecting the shaped beam and illuminating the same onto a wafer. The improvement comprises the steps of (a) holding mask information data, which are information for deflecting the charged particle beam to the selected mask pattern and in which an index is provided every mask pattern of the stencil mask, in a mask memory, (b) holding pattern exposure data, which are information for designating a mask pattern by the use of the index of each mask pattern held in the mask memory and for deflecting the charged particle beam shaped with the designated mask pattern to a predetermined region on the wafer, in a data memory; and (c) deflecting the charged particle beam of the stencil mask and shaping the beam by the use of the mask information data outputted from the mask memory in response to the index designated in the pattern exposure data.
摘要:
A charged particle beam-exposure method in which a subject is exposed to a pattern via a charged particle beam having an on/off exposure characteristic. A blanking aperture array has n open/close devices which individually/correspond to respective scan positions of the charged particle beam and operate to control the on/off exposure characteristic of the charged particle beam. The method includes: (1) selectively designating bit positions of successive n-bit width data blocks of the pattern, each n-bit width data block stored within a row of the pattern; (2) successively reading each n-bit width data block; (3) forming successive rows of unit pattern data from the successively designated and read n-bit width data block, each successive row corresponding to a successively designated and read n-bit width data block; (4) storing the successive rows of unit pattern data to form unit pattern data in bit matrix form having m columns and n rows; and (5) sequentially supplying the successive rows of unit pattern data to the blanking aperture array to control the on/off exposure characteristic of the charged particle beam.
摘要:
A blanking aperture array for use in a charged particle beam exposure has a substrate, at least m rows by n columns of apertures arranged two-dimensionally in the substrate, where each of the apertures have a pair of blanking electrodes and m and n are integers greater than one, and n m-bit shift registers provided on the substrate for applying voltages dependent on pattern data to m pairs of the blanking electrodes of the apertures in the ith column, where i=1, 2, . . . , n. The pattern data is related to a pattern which is to be exposed using the blanking aperture array.
摘要:
A blanking aperture array for use in a charged particle beam exposure has a substrate, at least m rows by n columns of apertures arranged two-dimensionally in the substrate, where each of the apertures have a pair of blanking electrodes and m and n are integers greater than one, and n m-bit shift registers provided on the substrate for applying voltages dependent on pattern data to m pairs of the blanking electrodes of the apertures in the ith column, where i=1, 2, . . . , n. The pattern data is relates to a pattern which is to be exposed using the blanking aperture array.
摘要:
An electron beam exposure system comprises a pattern data generator for producing first pattern data indicative of a desired pattern of electron beam to be written on a wafer and second pattern data indicative of the number of repetitions of the pattern specified by the first pattern data, as a time sequential mixture of the first and second pattern data. The time sequential mixture of the data is sorted in a data sorting unit into a parallel data of the first pattern data and the second pattern data. Then, a discrimination is made whether the data is the first pattern data or the second pattern data, and when the data is the second pattern data, the data that follows immediately behind the second pattern data is transferred to an output path simultaneously with the second pattern data, which is transferred to another output path. Thereby, the first and second pattern data form a parallel data. The parallel data thus formed is next compressed by deleting the data, that follows immediately behind the data which contains the second pattern data, from both output paths.
摘要:
An electron beam exposure system includes a pattern memory for storing bitmap data of a pattern to be exposed, wherein the pattern memory includes a number of latch elements arranged in rows and columns such that the writing of the bitmap data is achieved line by line and such that the reading of the bitmap data is achieved column by column.
摘要:
A device capable of externally setting and modifying internal functions and a data processing apparatus using such a device are provided, outside the data processing apparatus, with a function data setting unit for reading and writing data for use in setting, modifying, and storing the internal functions; and an execution state stack unit for storing data indicating the state of the internal functions being executed. The data processing apparatus includes an internal resource management unit for setting and modifying the internal functions, and saving and restoring, through the execution state stack unit, the data indicating the state of the functions being executed. This system allows the processes to be freely performed by the device and the data processing apparatus at a high speed.
摘要:
A decoder to decode input data which includes an instruction code. The decoder includes a high-order address generator which uses the instruction code in the generation of the high-order address, and a storage circuit which stores control codes that corresponded to the instruction code. Indication data is stored in the beginning or end of the storage area to indicate the number of control codes present in the storage area. The address generated by the high-order address generator locates the desired control codes. A low-order address generator uses the indication data to count the number of control codes and derive a low-order address offset from the high order address. An internal address generator generates an internal address from a combination of the high-order and low-order addresses. The internal address is supplied to the storage circuit serially read out the control codes as the internal address is continuously incremented. The decoded input data is used in the generation of a pattern and to control an electron beam which exposes a wafer.
摘要:
A data processing apparatus and card-sized data processing device that consume less power and operate more reliably. An antenna captures a radio wave sent from an external reader/writer device, and a receiver converts it into an electrical signal. From this electrical signal, a first power supply circuit produces a first supply voltage for use in analog circuits. A second power supply circuit produces a second supply voltage that is different from the first supply voltage, for use in memory circuits. A third power supply circuit produces a third supply voltage that is different from the other voltages, for use in digital circuits. The memory and digital circuits thus operate with different supply voltages optimized for their individual requirements. Total power consumption of the device is reduced by lowering the voltage for the digital circuits, including MPU, while giving a higher voltage to the memory circuits.