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    Blanking aperture array and charged particle beam exposure method
    2.
    发明授权
    Blanking aperture array and charged particle beam exposure method 失效
    消隐孔径阵列和带电粒子束曝光方法

    公开(公告)号：US5262341A

    公开(公告)日：1993-11-16

    申请号：US991718

    申请日：1992-12-16

    申请人： Shunsuke Fueki ,  Hiroshi Yasuda ,  Kiichi Sakamoto ,  Yasushi Takahashi

    发明人： Shunsuke Fueki ,  Hiroshi Yasuda ,  Kiichi Sakamoto ,  Yasushi Takahashi

    IPC分类号： H01J37/04 ,  H01J37/302 ,  H01L21/268

    CPC分类号： H01J37/045 ,  H01J37/3026

    摘要： A blanking aperture array for use in a charged particle beam exposure has a substrate, at least m rows by n columns of apertures arranged two-dimensionally in the substrate, where each of the apertures have a pair of blanking electrodes and m and n are integers greater than one, and n m-bit shift registers provided on the substrate for applying voltages dependent on pattern data to m pairs of the blanking electrodes of the apertures in the ith column, where i=1, 2, . . . , n. The pattern data is related to a pattern which is to be exposed using the blanking aperture array.

    摘要翻译： 用于带电粒子束曝光的消隐孔径阵列具有衬底，至少m行×n列的孔在衬底中二维布置，其中每个孔具有一对消隐电极，m和n是整数 大于1和n个m位移位寄存器，其设置在基板上，用于将第n列中的孔的m对对的图案数据施加电压，其中i = 1,2。 。 。 ，n。 图案数据与使用消隐孔径阵列曝光的图案有关。

    Electron beam exposure system with increased efficiency of exposure operation
    4.
    发明授权
    Electron beam exposure system with increased efficiency of exposure operation 失效
    电子束曝光系统具有更高的曝光效率

    公开(公告)号：US5175435A

    公开(公告)日：1992-12-29

    申请号：US782251

    申请日：1991-10-25

    申请人： Kiichi Sakamoto ,  Shunsuke Fueki ,  Hiroshi Yasuda

    发明人： Kiichi Sakamoto ,  Shunsuke Fueki ,  Hiroshi Yasuda

    IPC分类号： H01L21/027 ,  H01J37/302

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J2237/30422 ,  H01J2237/31776

    摘要： An electron beam exposure system comprises a pattern data generator for producing first pattern data indicative of a desired pattern of electron beam to be written on a wafer and second pattern data indicative of the number of repetitions of the pattern specified by the first pattern data, as a time sequential mixture of the first and second pattern data. The time sequential mixture of the data is sorted in a data sorting unit into a parallel data of the first pattern data and the second pattern data. Then, a discrimination is made whether the data is the first pattern data or the second pattern data, and when the data is the second pattern data, the data that follows immediately behind the second pattern data is transferred to an output path simultaneously with the second pattern data, which is transferred to another output path. Thereby, the first and second pattern data form a parallel data. The parallel data thus formed is next compressed by deleting the data, that follows immediately behind the data which contains the second pattern data, from both output paths.

    摘要翻译： 电子束曝光系统包括图形数据发生器，用于产生指示要写入晶片的电子束的期望图案的第一图案数据和指示由第一图案数据指定的图案的重复次数的第二图案数据， 第一和第二图案数据的时间顺序混合。 将数据的时间序列混合在数据排序单元中排列成第一图案数据和第二图案数据的并行数据。 然后，判断数据是第一图案数据还是第二图案数据，并且当数据是第二图案数据时，紧接在第二图案数据之后的数据与第二图案数据同时被传送到输出路径 模式数据，传输到另一个输出路径。 由此，第一和第二图案数据形成并行数据。 这样形成的并行数据接下来通过从两个输出路径中删除紧跟在包含第二模式数据的数据之后的数据来进行压缩。

    Charged-particle beam exposure method and apparatus
    5.
    发明授权
    Charged-particle beam exposure method and apparatus 失效
    充电颗粒光束曝光方法和装置

    公开(公告)号：US5130547A

    公开(公告)日：1992-07-14

    申请号：US616870

    申请日：1990-11-21

    申请人： Kiichi Sakamoto ,  Yoshihisa Oae ,  Shunsuke Fueki ,  Akio Yamada ,  Hiroshi Yasuda

    发明人： Kiichi Sakamoto ,  Yoshihisa Oae ,  Shunsuke Fueki ,  Akio Yamada ,  Hiroshi Yasuda

    IPC分类号： G05B19/408 ,  H01J37/302

    CPC分类号： H01J37/3026 ,  G05B19/408 ,  G05B2219/35567

    摘要： A charged-particle beam exposure method which has a stencil mask formed with a several mask patterns, deflects a beam of charged particles to a mask pattern selected from among the several mask patterns and shapes the beam, and performs wafer exposure by deflecting the shaped beam and illuminating the same onto a wafer. The improvement comprises the steps of (a) holding mask information data, which are information for deflecting the charged particle beam to the selected mask pattern and in which an index is provided every mask pattern of the stencil mask, in a mask memory, (b) holding pattern exposure data, which are information for designating a mask pattern by the use of the index of each mask pattern held in the mask memory and for deflecting the charged particle beam shaped with the designated mask pattern to a predetermined region on the wafer, in a data memory; and (c) deflecting the charged particle beam of the stencil mask and shaping the beam by the use of the mask information data outputted from the mask memory in response to the index designated in the pattern exposure data.

    Charged particle beam exposure apparatus and method of cleaning the same
    9.
    发明授权
    Charged particle beam exposure apparatus and method of cleaning the same 失效
    带电粒子束曝光装置及其清洗方法

    公开(公告)号：US5401974A

    公开(公告)日：1995-03-28

    申请号：US191458

    申请日：1994-02-03

    申请人： Yoshihisa Oae ,  Takamasa Satoh ,  Yasushi Takahashi ,  Kiichi Sakamoto ,  Hiroshi Yasuda ,  Soichiro Arai ,  Moritaka Nakamura

    发明人： Yoshihisa Oae ,  Takamasa Satoh ,  Yasushi Takahashi ,  Kiichi Sakamoto ,  Hiroshi Yasuda ,  Soichiro Arai ,  Moritaka Nakamura

    IPC分类号： H01J37/30 ,  H05H1/00

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3002 ,  H01J37/32082 ,  H01J37/32862 ,  H01J2237/022 ,  H01J2237/3175

    摘要： In a charged particle beam exposure apparatus in which a charged particle beam is projected onto a member to be exposed to thereby form a pattern thereon, there are provided a plurality of electrodes disposed around an optical axis of the charged particle beam, a first unit for introducing a gas containing oxygen as a main component into an inside of the charged particle beam exposure apparatus including the plurality of electrodes and for holding the inside of the apparatus at a degree of vacuum between 0.1 Torr and 4 Torr, and a second unit for selectively applying either a high-frequency signal having a frequency between 100 kHz and 800 kHz or a reference signal to each of the plurality of electrodes. A plasma radical state of the gas is generated in the inside of the apparatus so that a deposition present in the apparatus can be eliminated.

    摘要翻译： 在带电粒子束曝光装置中，带电粒子束投射到待暴露的构件上，从而在其上形成图案，设置有围绕带电粒子束的光轴设置的多个电极，第一单元， 将含有氧的气体作为主要成分引入到包括多个电极的带电粒子束曝光设备的内部，并将设备内部保持在0.1托和4托之间的真空度，以及用于选择性地将第二单元 将频率在100kHz和800kHz之间的高频信号或参考信号施加到多个电极中的每一个。 在装置的内部产生气体的等离子体自由基状态，从而可以消除装置中存在的沉积物。