公开(公告)号：US08546902B2

公开(公告)日：2013-10-01

申请号：US12779471

申请日：2010-05-13

申请人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Takeshi Ichikawa ,  Ryuichi Mishima

发明人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Takeshi Ichikawa ,  Ryuichi Mishima

IPC分类号： H01L27/146

CPC分类号： H01L27/14601 ,  H01L27/14609 ,  H04N5/335

摘要： The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.

摘要翻译： 本发明涉及一种光电转换装置，其中包括用于将光转换为信号电荷的光电转换装置的像素和包括用于处理信号电荷的电路的外围电路的像素， 相同的衬底，包括：用于形成光电区域的第一导电类型的第一半导体区域，第一半导体区域形成在第二导电类型的第二半导体区域中; 以及第一导电类型的第三半导体区域和用于形成外围电路的第二导电类型的第四半导体区域，第三和第四半导体区域形成在第二半导体区域中; 其中，所述第一半导体区域的杂质浓度高于所述第三半导体区域的杂质浓度。

公开(公告)号：US20060141655A1

公开(公告)日：2006-06-29

申请号：US11318930

申请日：2005-12-28

申请人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Shigeru Nishimura ,  Ryuichi Mishima ,  Yasushi Nakata

发明人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Shigeru Nishimura ,  Ryuichi Mishima ,  Yasushi Nakata

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14603

摘要： It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle θ with at least two planes perpendicular to a reference (100) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle φ to a direction perpendicular to the principal plane within a range of 0°

摘要翻译： 本发明的目的是提供一种光电转换装置的制造方法，其中即使离子以一定的仰角注入到由硅制成的半导体衬底表面中也不产生平面沟道。 一种在硅衬底的一个主平面上包括硅衬底和光电转换元件的光电转换器件的制造方法，其中主平面具有偏角，每个角度θ与至少两个垂直于基准的平面（100 ）平面，并且用于形成构成光电转换元件的半导体区域的离子注入方向在垂直于主平面的方向上在0°< phi <= 45°，此外，离子注入方向的投影方向与主平面的方向在0°<α<90°的范围内与两个平面方向形成每个角度α。

公开(公告)号：US07541211B2

公开(公告)日：2009-06-02

申请号：US11318930

申请日：2005-12-28

申请人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Shigeru Nishimura ,  Ryuichi Mishima ,  Yasushi Nakata

发明人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Shigeru Nishimura ,  Ryuichi Mishima ,  Yasushi Nakata

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14603

摘要： It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle θ with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle φ to a direction perpendicular to the principal plane within a range of 0°

摘要翻译： 本发明的目的是提供一种光电转换装置的制造方法，其中即使离子以一定的仰角注入到由硅制成的半导体衬底表面中也不产生平面沟道。 一种在硅衬底的一个主平面上包括硅衬底和光电转换元件的光电转换器件的制造方法，其中所述主平面具有偏离角度，每个角度θ与垂直于基准的至少两个平面（1 0°）平面，并且用于形成构成光电转换元件的半导体区域的离子注入方向在0°的范围内与主平面垂直的方向形成角度 °

公开(公告)号：US08309997B2

公开(公告)日：2012-11-13

申请号：US13173007

申请日：2011-06-30

申请人： Hiroshi Yuzurihara ,  Seiichi Tamura ,  Ryuichi Mishima

发明人： Hiroshi Yuzurihara ,  Seiichi Tamura ,  Ryuichi Mishima

IPC分类号： H01L31/02

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/035281 ,  H01L31/03529

摘要： An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).

摘要翻译： 本发明的目的是提供一种光电转换装置，其中，当从电荷存储区域输出电荷时的电荷转移特性的提高和电荷存储期间的暗电流产生的抑制相互兼容。 该目的通过在电源电压（V）的零到一半的范围内形成电荷存储区域的耗尽电压来实现，在电荷转移期间形成转移MOS晶体管的栅极电压，范围为1 电源电压的一半与电源电压（V）成正比，并且在从电源电压的负一半到零（V）的范围内的电荷存储期间形成转移MOS晶体管的栅极电压。

公开(公告)号：US20110254065A1

公开(公告)日：2011-10-20

申请号：US13173007

申请日：2011-06-30

申请人： Hiroshi Yuzurihara ,  Seiichi Tamura ,  Ryuichi Mishima

发明人： Hiroshi Yuzurihara ,  Seiichi Tamura ,  Ryuichi Mishima

IPC分类号： H01L31/02

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/035281 ,  H01L31/03529

摘要： An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).

摘要翻译： 本发明的目的是提供一种光电转换装置，其中，当从电荷存储区域输出电荷时的电荷转移特性的提高和电荷存储期间的暗电流产生的抑制相互兼容。 该目的通过在电源电压（V）的零到一半的范围内形成电荷存储区域的耗尽电压来实现，在电荷转移期间形成转移MOS晶体管的栅极电压，范围为1 电源电压的一半与电源电压（V）成正比，并且在从电源电压的负一半到零（V）的范围内的电荷存储期间形成转移MOS晶体管的栅极电压。

公开(公告)号：US07928486B2

公开(公告)日：2011-04-19

申请号：US12642094

申请日：2009-12-18

申请人： Hiroshi Yuzurihara ,  Ryuichi Mishima ,  Takanori Watanabe ,  Takeshi Ichikawa ,  Seiichi Tamura

发明人： Hiroshi Yuzurihara ,  Ryuichi Mishima ,  Takanori Watanabe ,  Takeshi Ichikawa ,  Seiichi Tamura

IPC分类号： H01L31/112

CPC分类号： H01L27/14687 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643

摘要： A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2

摘要翻译： 一种光电转换装置，包括第一导电类型的半导体衬底和具有第一导电类型的杂质区和与第一导电类型相反的第二导电类型的多个杂质区的光电转换元件。 多个第二导电型杂质区域至少包括第一杂质区域，设置在第一杂质区域和衬底表面之间的第二杂质区域和设置在第二杂质区域和第二杂质区域的表面之间的第三杂质区域 底物。 对应于第一杂质区域中的杂质浓度的峰值的浓度C1，与第二杂质区域中的杂质浓度的峰值对应的浓度C2和与第三杂质区域中的杂质浓度的峰值相对应的浓度C3 满足以下关系：C2

公开(公告)号：US07737519B2

公开(公告)日：2010-06-15

申请号：US10599427

申请日：2005-04-27

申请人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Takeshi Ichikawa ,  Ryuichi Mishima

发明人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Takeshi Ichikawa ,  Ryuichi Mishima

IPC分类号： H01L31/068

CPC分类号： H01L27/14601 ,  H01L27/14609 ,  H04N5/335

摘要： The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.

摘要翻译： 本发明涉及一种光电转换装置，其中包括用于将光转换为信号电荷的光电转换装置的像素和包括用于处理信号电荷的电路的外围电路的像素， 相同的衬底，包括：用于形成光电区域的第一导电类型的第一半导体区域，第一半导体区域形成在第二导电类型的第二半导体区域中; 以及第一导电类型的第三半导体区域和用于形成外围电路的第二导电类型的第四半导体区域，所述第三和第四半导体区域形成在所述第二半导体区域中; 其中，所述第一半导体区域的杂质浓度高于所述第三半导体区域的杂质浓度。

公开(公告)号：US20090218602A1

公开(公告)日：2009-09-03

申请号：US12435756

申请日：2009-05-05

申请人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Shigeru Nishimura ,  Ryuichi Mishima ,  Yasushi Nakata

发明人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Shigeru Nishimura ,  Ryuichi Mishima ,  Yasushi Nakata

IPC分类号： H01L27/146 ,  H01L21/02

CPC分类号： H01L27/14689 ,  H01L27/14603

摘要： It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle θ with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle φ to a direction perpendicular to the principal plane within a range of 0°

摘要翻译： 本发明的目的是提供一种光电转换装置的制造方法，其中即使离子以一定的仰角注入到由硅制成的半导体衬底表面中也不产生平面沟道。 一种在硅衬底的一个主平面上包括硅衬底和光电转换元件的光电转换器件的制造方法，其中所述主平面具有偏离角度，每个角度θ与垂直于基准的至少两个平面（1 0°）平面，并且用于形成构成光电转换元件的半导体区域的离子注入方向在0°的范围内与主平面垂直的方向形成角度 °

公开(公告)号：US20080157153A1

公开(公告)日：2008-07-03

申请号：US12041738

申请日：2008-03-04

申请人： Hiroshi Yuzurihara ,  Seiichi Tamura ,  Ryuichi Mishima

发明人： Hiroshi Yuzurihara ,  Seiichi Tamura ,  Ryuichi Mishima

IPC分类号： H01L27/146

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/035281 ,  H01L31/03529

摘要： An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).

摘要翻译： 本发明的目的是提供一种光电转换装置，其中，当从电荷存储区域输出电荷时的电荷转移特性的提高和电荷存储期间的暗电流产生的抑制相互兼容。 该目的通过在电源电压（V）的零到一半的范围内形成电荷存储区域的耗尽电压来实现，在电荷转移期间形成转移MOS晶体管的栅极电压，范围为1 电源电压的一半与电源电压（V）成正比，并且在从电源电压的负一半到零（V）的范围内的电荷存储期间形成转移MOS晶体管的栅极电压。

公开(公告)号：US07365380B2

公开(公告)日：2008-04-29

申请号：US11214846

申请日：2005-08-31

申请人： Hiroshi Yuzurihara ,  Seiichi Tamura ,  Ryuichi Mishima

发明人： Hiroshi Yuzurihara ,  Seiichi Tamura ,  Ryuichi Mishima

IPC分类号： H01L31/62 ,  H01L31/105

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/035281 ,  H01L31/03529

摘要： An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate,voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).

摘要翻译： 本发明的目的是提供一种光电转换装置，其中，当从电荷存储区域输出电荷时的电荷转移特性的提高和电荷存储期间的暗电流产生的抑制相互兼容。 该目的通过在电源电压（V）的零到一半的范围内形成电荷存储区域的耗尽电压来实现，在电荷转移期间形成转移MOS晶体管的栅极电压，范围为1 电源电压的一半与电源电压（V）成正比，并且在从电源电压的负一半到零（V）的范围内的电荷存储期间形成转移MOS晶体管的栅极电压。