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1.发明申请Aqueous dispersion for chemical mechanical polishing, kit for preparing the aqueous dispersion, chemical mechanical polishing process, and process for producing semiconductor devices 审中-公开用于化学机械抛光的水分散体，用于制备水性分散体的试剂盒，化学机械抛光工艺以及用于制备半导体器件的方法公开(公告)号：US20070049180A1
公开(公告)日：2007-03-01
申请号：US11508893
申请日：2006-08-24
申请人： Hirotaka Shida , Akihiro Takemura , Masayuki Hattori , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Hirotaka Shida , Akihiro Takemura , Masayuki Hattori , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： B24B7/30
CPC分类号： C09G1/02 , B24B37/044 , H01L21/3212 , H01L21/76835 , H01L21/7684
摘要： An aqueous dispersion for chemical mechanical polishing contains water, a polyvinylpyrrolidone having a weight-average molecular weight exceeding 200,000, an oxidant, a protective film-forming agent and abrasive grains, the protective film-forming agent containing a first metal compound-forming agent which forms a water-insoluble metal compound, and a second metal compound-forming agent which forms a water-soluble metal compound. The aqueous dispersion is capable of uniformly and stably polishing a metal film at low friction without causing defects in a metal film and an insulating film.
摘要翻译： 用于化学机械抛光的水性分散体含有水，重均分子量超过200,000的聚乙烯吡咯烷酮，氧化剂，保护性成膜剂和磨料颗粒，所述保护性成膜剂含有第一金属化合物形成剂，所述第一金属化合物形成剂 形成水不溶性金属化合物和形成水溶性金属化合物的第二金属化合物形成剂。 水分散体能够以低摩擦力均匀且稳定地抛光金属膜，而不会在金属膜和绝缘膜中产生缺陷。
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2.发明申请CLEANING COMPOSITION, CLEANING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开清洁组合物，清洁方法和半导体器件的制造方法公开(公告)号：US20080045016A1
公开(公告)日：2008-02-21
申请号：US11833534
申请日：2007-08-03
申请人： Michiaki Andou , Tomohisa Konno , Hirotaka Shida , Kazuhito Uchikura , Nobuyuki Kurashima , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Michiaki Andou , Tomohisa Konno , Hirotaka Shida , Kazuhito Uchikura , Nobuyuki Kurashima , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： H01L21/461 , C11D3/37
CPC分类号： C11D11/0047 , C11D3/37 , C11D17/06 , H01L21/02074
摘要： A cleaning composition can decontaminate a surface of a chemically mechanically polished semiconductor substrate having a metal wiring and a low dielectric constant film and can highly remove impurities such as residual abrasive grains, residual polishing waste, and metal ions on the metal wiring and low dielectric constant film without corroding the metal wiring, degrading electric characteristics of the low dielectric constant film, and causing mechanical damage to the low dielectric constant film. A cleaning method of a semiconductor substrate uses the cleaning composition, and a manufacturing method of a semiconductor substrate includes a step of performing the cleaning method.The cleaning composition is used for a chemically mechanically polished surface, and includes organic polymer particles (A) having a crosslinked structure and an average dispersed particle diameter of 10 nm or more and less than 100 nm, and a complexing agent (B).
摘要翻译： 清洁组合物可以对具有金属布线和低介电常数膜的化学机械抛光的半导体衬底的表面进行去污染，并且可以高度去除金属布线上的残留磨粒，残留抛光废料和金属离子等杂质和低介电常数 膜不会腐蚀金属布线，降低低介电常数膜的电特性，并对低介电常数膜造成机械损伤。 半导体衬底的清洁方法使用清洁组合物，并且半导体衬底的制造方法包括执行清洁方法的步骤。 清洁组合物用于化学机械抛光的表面，并且包括具有交联结构和平均分散粒径为10nm以上且小于100nm的有机聚合物粒子（A）和络合剂（B）。
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3.发明申请公开(公告)号：US20110250756A1
公开(公告)日：2011-10-13
申请号：US13165980
申请日：2011-06-22
申请人： Kazuhito UCHIKURA , Hirotaka Shida , Yuuichi Hashiguchi , Gaku Minamihaba , Dai Fukushima , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Kazuhito UCHIKURA , Hirotaka Shida , Yuuichi Hashiguchi , Gaku Minamihaba , Dai Fukushima , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： H01L21/304 , H01L21/306 , B82Y99/00
CPC分类号： H01L21/7684 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： A chemical mechanical polishing aqueous dispersion comprises (A) abrasive grains, (B) at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, (C) an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid, (D) an oxidizing agent, and (E) a nonionic surfactant having a triple bond, the mass ratio (WB/WC) of the amount (WB) of the component (B) to the amount (WC) of the component (C) being 0.01 or more and less than 2, and the component (E) being shown by the following general formula (1), wherein m and n individually represent integers equal to or larger than one, provided that m+n≦50 is satisfied.
摘要翻译： 化学机械研磨用水系分散体包含（A）磨粒，（B）至少一种喹啉羧酸和吡啶羧酸，（C）除喹啉羧酸以外的有机酸和吡啶羧酸，（D）氧化剂，（E ）具有三键的非离子表面活性剂，组分（B）的量（WB）与组分（C）的量（WC）的质量比（WB / WC）为0.01以上且小于2， 并且组分（E）由以下通式（1）表示，其中m和n分别表示等于或大于1的整数，条件是满足m + n＆nlE; 50。
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公开(公告)号：US08174125B2
公开(公告)日：2012-05-08
申请号：US12412811
申请日：2009-03-27
IPC分类号： H01L23/48
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/76832 , H01L21/7684 , H01L23/522 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing method of a semiconductor device comprises: providing a first insulating film whose relative dielectric constant is at most a predetermined value above a substrate; providing a second insulating film whose relative dielectric constant is greater than the predetermined value on a surface of the first insulating film; forming a recess for a wire through the second insulating film and extending into the first insulating film, and also forming a recess for a dummy wire through the second insulating film and extending into the first insulating film spaced from a formed area of the recess for the wire; providing a conductive material inside the recess for the wire and the recess for the dummy wire; and providing a wire inside the recess for the wire and providing a dummy wire inside the recess for the dummy wire by polishing and removing the conductive material.
摘要翻译： 半导体器件的制造方法包括：提供相对介电常数在基板上方至多预定值的第一绝缘膜; 提供在所述第一绝缘膜的表面上相对介电常数大于所述预定值的第二绝缘膜; 通过所述第二绝缘膜形成用于电线的凹槽并延伸到所述第一绝缘膜中，并且还通过所述第二绝缘膜形成用于虚拟线的凹槽并且延伸到与所述凹部的形成区域间隔开的所述第一绝缘膜中， 线; 在用于线的凹槽内部和用于虚拟线的凹槽内提供导电材料; 并且在所述凹槽内提供用于所述导线的线，并且通过抛光和去除所述导电材料在所述虚拟线的所述凹部内部提供虚拟线。
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公开(公告)号：US07042099B2
公开(公告)日：2006-05-09
申请号：US10640004
申请日：2003-08-14
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/76832 , H01L21/7684 , H01L23/522 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： There is disclosed a semiconductor device comprising a substrate, a first insulating film which is provided above the substrate and has a relative dielectric constant which is at most a predetermined value, a second insulating film which is provided on a surface of the first insulating film and has a relative dielectric constant greater than the predetermined value, a wire which is provided in a recess for the wire, which is formed passing through the second insulating film and extending into the first insulating film, and a dummy wire provided in a recess for the dummy wire, which is formed passing through the second insulating film and extending into the first insulating film, and is located in a predetermined area spaced from an area where the wire is provided.
摘要翻译： 公开了一种半导体器件，包括：衬底;第一绝缘膜，设置在衬底上方，并且具有至多预定值的相对介电常数;第二绝缘膜，设置在第一绝缘膜的表面上;以及 具有大于预定值的相对介电常数，设置在通过第二绝缘膜并延伸到第一绝缘膜中的用于导线的凹槽中的导线，以及设置在凹部中的虚拟线，用于 虚线穿过第二绝缘膜并延伸到第一绝缘膜中，并且位于与设置导线的区域间隔开的预定区域中。
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公开(公告)号：US20060151888A1
公开(公告)日：2006-07-13
申请号：US11370050
申请日：2006-03-08
IPC分类号： H01L23/48
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/76832 , H01L21/7684 , H01L23/522 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing method of a semiconductor device comprises: providing a first insulating film whose relative dielectric constant is at most a predetermined value above a substrate; providing a second insulating film whose relative dielectric constant is greater than the predetermined value on a surface of the first insulating film; forming a recess for a wire through the second insulating film and extending into the first insulating film, and also forming a recess for a dummy wire through the second insulating film and extending into the first insulating film spaced from a formed area of the recess for the wire; providing a conductive material inside the recess for the wire and the recess for the dummy wire; and providing a wire inside the recess for the wire and providing a dummy wire inside the recess for the dummy wire by polishing and removing the conductive material.
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公开(公告)号：US20090184415A1
公开(公告)日：2009-07-23
申请号：US12412811
申请日：2009-03-27
IPC分类号： H01L23/52
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/76832 , H01L21/7684 , H01L23/522 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing method of a semiconductor device comprises: providing a first insulating film whose relative dielectric constant is at most a predetermined value above a substrate; providing a second insulating film whose relative dielectric constant is greater than the predetermined value on a surface of the first insulating film; forming a recess for a wire through the second insulating film and extending into the first insulating film, and also forming a recess for a dummy wire through the second insulating film and extending into the first insulating film spaced from a formed area of the recess for the wire; providing a conductive material inside the recess for the wire and the recess for the dummy wire; and providing a wire inside the recess for the wire and providing a dummy wire inside the recess for the dummy wire by polishing and removing the conductive material.
摘要翻译： 半导体器件的制造方法包括：提供相对介电常数在基板上方至多预定值的第一绝缘膜; 提供在所述第一绝缘膜的表面上相对介电常数大于所述预定值的第二绝缘膜; 通过所述第二绝缘膜形成用于电线的凹槽并延伸到所述第一绝缘膜中，并且还通过所述第二绝缘膜形成用于虚拟线的凹槽并且延伸到与所述凹部的形成区域间隔开的所述第一绝缘膜中， 线; 在用于线的凹槽内部和用于虚拟线的凹槽内提供导电材料; 并且在所述凹槽内提供用于所述导线的线，并且通过抛光和去除所述导电材料在所述虚拟线的所述凹部内部提供虚拟线。
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公开(公告)号：US07521350B2
公开(公告)日：2009-04-21
申请号：US11370050
申请日：2006-03-08
IPC分类号： H01L21/4763
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/76832 , H01L21/7684 , H01L23/522 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing method of a semiconductor device comprises: providing a first insulating film whose relative dielectric constant is at most a predetermined value above a substrate; providing a second insulating film whose relative dielectric constant is greater than the predetermined value on a surface of the first insulating film; forming a recess for a wire through the second insulating film and extending into the first insulating film, and also forming a recess for a dummy wire through the second insulating film and extending into the first insulating film spaced from a formed area of the recess for the wire; providing a conductive material inside the recess for the wire and the recess for the dummy wire; and providing a wire inside the recess for the wire and providing a dummy wire inside the recess for the dummy wire by polishing and removing the conductive material.
摘要翻译： 半导体器件的制造方法包括：提供相对介电常数在基板上方至多预定值的第一绝缘膜; 提供在所述第一绝缘膜的表面上相对介电常数大于所述预定值的第二绝缘膜; 通过所述第二绝缘膜形成用于导线的凹槽并延伸到所述第一绝缘膜中，并且还通过所述第二绝缘膜形成用于虚拟线的凹部并且延伸到与所述凹部的形成区域间隔开的所述第一绝缘膜中， 线; 在用于线的凹槽内部和用于虚拟线的凹槽内提供导电材料; 并且在所述凹槽内提供用于所述导线的线，并且通过抛光和去除所述导电材料在所述虚拟线的所述凹部内部提供虚拟线。
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9.发明授权Post-CMP treating liquid and manufacturing method of semiconductor device using the same 失效后CMP处理液和使用其的半导体器件的制造方法公开(公告)号：US07951717B2
公开(公告)日：2011-05-31
申请号：US11967584
申请日：2007-12-31
IPC分类号： H01L21/302 , H01L21/461 , C09K3/14 , C09G1/02
CPC分类号： H01L21/02074
摘要： Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
摘要翻译： 提供后CMP处理液，其中之一包括水，两性表面活性剂，阴离子表面活性剂，络合剂，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm， 和四甲基氢氧化铵。 另外还包括水，多酚，阴离子表面活性剂，乙二胺四乙酸，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm，四甲基氢氧化铵。 两种处理液的pH范围为4至9，并且以10nm / min或更低的速率显示绝缘膜和导电膜的抛光速率。
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10.发明申请POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 审中-公开使用其的半导体器件的后CMP处理液体和制造方法公开(公告)号：US20110195888A1
公开(公告)日：2011-08-11
申请号：US13091732
申请日：2011-04-21
IPC分类号： C11D3/60
CPC分类号： H01L21/02074
摘要： Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
摘要翻译： 提供后CMP处理液，其中之一包括水，两性表面活性剂，阴离子表面活性剂，络合剂，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm， 和四甲基氢氧化铵。 另外还包括水，多酚，阴离子表面活性剂，乙二胺四乙酸，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm，四甲基氢氧化铵。 两种处理液的pH范围为4至9，并且以10nm / min或更低的速率显示绝缘膜和导电膜的抛光速率。
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