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1.发明授权CVD apparatus equipped with moisture monitoring 有权CVD装置，其清洗方法，用于判断半导体制造装置的维护时间的方法，水分监测装置和配备有其的半导体制造装置公开(公告)号：US06491758B1
公开(公告)日：2002-12-10
申请号：US09651255
申请日：2000-08-30
申请人： Hiroyuki Hasegawa , Tomonori Yamaoka , Hiroshi Masusaki , Takayuki Satou , Katsumasa Suzuki , Hiroki Tokunaga
发明人： Hiroyuki Hasegawa , Tomonori Yamaoka , Hiroshi Masusaki , Takayuki Satou , Katsumasa Suzuki , Hiroki Tokunaga
IPC分类号： C23C1600
CPC分类号： C23C16/4408 , C23C16/4401 , C23C16/52
摘要： A CVD apparatus is able to efficiently perform purging treatment after maintenance by using for the purge gas a mixed gas of a high thermal conductivity and an inert gas. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times. In addition, in order to judge suitable maintenance times, the moisture concentration in reaction chamber is measured with a moisture meter connected to the reaction chamber when performing a corrosive gas treatment, and maintenance times are determined according to changes in the moisture concentration when corrosive gas treatment is performed repeatedly. In addition, in order to measure the moisture of corrosive gas while preventing obstruction of piping in a moisture monitoring apparatus, a moisture monitoring apparatus, including a pipe, of which one end is connected to reaction chamber into which corrosive gas flows, and a moisture meter connected to the other end which measures the moisture contained in the corrosive gas introduced from the reaction chamber, is equipped with a pipe beating mechanism.
摘要翻译： CVD装置能够通过对清洗气体使用高导热性和惰性气体的混合气体而进行清洗处理。 在半导体膜形成之前的清洗处理通过重复抽真空和引入惰性气体进行多次。 此外，为了判断合适的维护时间，在进行腐蚀性气体处理时，用与反应室连接的水分计测定反应室中的水分浓度，并且根据腐蚀性气体中的水分浓度的变化来确定维护时间 治疗重复进行。 此外，为了在防止水分监测装置中的管道阻塞的同时测量腐蚀性气体的水分，包括管道的水分监测装置，其一端连接到腐蚀性气体流入的反应室中，并且水分 连接到测量从反应室引入的腐蚀性气体中的水分的另一端的仪表配备有管道打浆机构。
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2.发明授权Method of purging CVD apparatus and method for judging maintenance of times of semiconductor production apparatuses 有权吹扫CVD装置的方法以及用于判断半导体制造装置的维护时间的方法公开(公告)号：US06887721B2
公开(公告)日：2005-05-03
申请号：US10021259
申请日：2001-12-19
申请人： Hiroyuki Hasegawa , Tomonori Yamaoka , Yoshio Ishihara , Hiroshi Masusaki , Takayuki Satou , Katsumasa Suzuki , Hiroki Tokunaga
发明人： Hiroyuki Hasegawa , Tomonori Yamaoka , Yoshio Ishihara , Hiroshi Masusaki , Takayuki Satou , Katsumasa Suzuki , Hiroki Tokunaga
IPC分类号： H01L21/00 , C23C16/44 , C23C16/52 , H01L21/205 , H01L21/66
CPC分类号： C23C16/4408 , C23C16/4401 , C23C16/52
摘要： The present invention discloses a CVD apparatus which, together with being able to efficiently perform purging treatment after maintenance, uses for the purge gas a mixed gas of a gas having high thermal conductivity and an inert gas during heated flow purging treatment after maintenance to perform startup of the CVD apparatus while reducing the amount of time required for purging treatment. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times. In addition, in order to judge suitable maintenance times of semiconductor production apparatuses that perform corrosive gas treatment in a reaction chamber, the moisture concentration in reaction chamber is measured with moisture meter connected to the reaction chamber when performing the corrosive gas treatment, and maintenance times of the semiconductor production apparatus are determined according to changes in the moisture concentration when corrosive gas treatment is performed repeatedly. In addition, in order to measure the moisture of corrosive gas during processing while preventing obstruction of piping in a moisture monitoring apparatus and semiconductor production apparatus equipped therewith, a moisture monitoring apparatus, which is equipped with a pipe, of which one end is connected to reaction chamber into which corrosive gas flows, and a moisture meter connected to the other end of that pipe which measures the moisture contained in the corrosive gas introduced from the reaction chamber, is at least equipped with pipe heating mechanism that heats the pipe.
摘要翻译： 本发明公开了一种CVD装置，其能够在维护后能够有效地进行清洗处理，在维护后的加热流动清洗处理中，使用具有高导热性的气体和惰性气体的混合气体进行吹扫，以进行启动 的CVD装置，同时减少清洗处理所需的时间。 在半导体膜形成之前的清洗处理通过重复抽真空和引入惰性气体进行多次。 此外，为了判断在反应室中进行腐蚀性气体处理的半导体制造装置的合适的维护时间，在进行腐蚀性气体处理时，在与反应室连接的水分计测量反应室中的水分浓度，并进行维护时间 根据重复进行腐蚀性气体处理时的水分浓度的变化来确定半导体制造装置。 此外，为了在加工过程中测量腐蚀性气体的湿度，同时防止水分监测装置和配备的半导体制造装置中的管道的阻塞，配备有管道的水分监测装置，其一端连接到 腐蚀性气体流入的反应室和与该管的另一端连接的湿度计，其测量从反应室引入的腐蚀性气体中含有的水分，至少配备有加热管道的管道加热机构。
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3.发明授权公开(公告)号：US06794204B2
公开(公告)日：2004-09-21
申请号：US10254601
申请日：2002-09-26
IPC分类号： G01R3126
CPC分类号： C23C16/4408 , C23C16/4401 , C23C16/52 , C23C16/54 , C30B25/14 , C30B25/165 , H01L21/67242 , Y10S438/906 , Y10S438/908 , Y10T29/41
摘要： A semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing is performed by a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content. Furthermore, the moisture content in the airtight space is measured by a first moisture measuring device which is connected to the airtight space, and thereafter, the substrate is inserted and ejected by a substrate carrying system, and a reactive gas is processed while measuring the moisture content in the reaction chamber by a second moisture measuring device, which is connected to the reaction chamber, after the moisture content in the airtight space is measured.
摘要翻译： 通过半导体制造装置可以通过正确调整处理条件，可以高精度地进行诸如选择性外延生长的反应气体处理的半导体制造方法，该半导体制造装置可以限制水分含量的增加，防止重金属污染等， 并研究了处理室和外部区域的含水量之间的相关性。 在提供基板时测量反应室和反应室的气体放电系统中的含水量，并且基于水分含量调节反应气体处理条件。 此外，气密空间中的水分含量通过连接到气密空间的第一湿度测量装置测量，然后由基板承载系统插入和喷射基板，并且在测量湿气的同时处理反应气体 在测量气密空间中的水分含量之后，通过与反应室连接的第二湿度测量装置在反应室中的含量。
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4.发明授权公开(公告)号：US07033843B2
公开(公告)日：2006-04-25
申请号：US10696702
申请日：2003-10-30
IPC分类号： G01R31/26
CPC分类号： C23C16/4408 , C23C16/4401 , C23C16/52 , C23C16/54 , C30B25/14 , C30B25/165 , H01L21/67242 , Y10S438/906 , Y10S438/908 , Y10T29/41
摘要： A semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing is performed by a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content. Furthermore, the moisture content in the airtight space is measured by a first moisture measuring device which is connected to the airtight space, and thereafter, the substrate is inserted and ejected by a substrate carrying system, and a reactive gas is processed while measuring the moisture content in the reaction chamber by a second moisture measuring device, which is connected to the reaction chamber, after the moisture content in the airtight space is measured.
摘要翻译： 通过半导体制造装置可以通过正确调整处理条件，可以高精度地进行诸如选择性外延生长的反应气体处理的半导体制造方法，该半导体制造装置可以限制水分含量的增加，防止重金属污染等， 并研究了处理室和外部区域的含水量之间的相关性。 在提供基板时测量反应室和反应室的气体放电系统中的含水量，并且基于水分含量调节反应气体处理条件。 此外，气密空间中的水分含量通过连接到气密空间的第一湿度测量装置测量，然后由基板承载系统插入和喷射基板，并且在测量湿气的同时处理反应气体 在测量气密空间中的水分含量之后，通过与反应室连接的第二水分测量装置在反应室中的含量。
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5.发明授权公开(公告)号：US06776805B2
公开(公告)日：2004-08-17
申请号：US09793124
申请日：2001-02-27
IPC分类号： H01L2100
CPC分类号： C23C16/4408 , C23C16/4401 , C23C16/52 , C23C16/54 , C30B25/14 , C30B25/165 , H01L21/67242 , Y10S438/906 , Y10S438/908 , Y10T29/41
摘要： A semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing is performed by a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content. Furthermore, the moisture content in the airtight space is measured by a first moisture measuring device which is connected to the airtight space, and thereafter, the substrate is inserted and ejected by a substrate carrying system, and a reactive gas is processed while measuring the moisture content in the reaction chamber by a second moisture measuring device, which is connected to the reaction chamber, after the moisture content in the airtight space is measured.
摘要翻译： 通过半导体制造装置可以通过正确调整处理条件，可以高精度地进行诸如选择性外延生长的反应气体处理的半导体制造方法，该半导体制造装置可以限制水分含量的增加，防止重金属污染等， 并研究了处理室和外部区域的含水量之间的相关性。 在提供基板时测量反应室和反应室的气体放电系统中的含水量，并且基于水分含量调节反应气体处理条件。 此外，气密空间中的水分含量通过连接到气密空间的第一湿度测量装置测量，然后由基板承载系统插入和喷射基板，并且在测量湿气的同时处理反应气体 在测量气密空间中的水分含量之后，通过与反应室连接的第二湿度测量装置在反应室中的含量。
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公开(公告)号：US20130340239A1
公开(公告)日：2013-12-26
申请号：US14002297
申请日：2012-03-01
申请人： Masahito Ueda , Hiroyuki Hasegawa , Kinya Watanable , Naoya Fujii
发明人： Masahito Ueda , Hiroyuki Hasegawa , Kinya Watanable , Naoya Fujii
CPC分类号： B21J15/02 , B21J15/025 , B21J15/147 , B29C65/562 , B29C65/602 , B29C65/7437 , B29C65/8253 , B29C66/1122 , B29C66/21 , B29C66/43 , B29C66/721 , B29C66/7212 , B29C66/72143 , B29C66/7392 , B29C66/7394 , B29C66/81422 , B29C66/81423 , B29C66/81429 , B29C66/8322 , F16B5/04 , F16B19/08 , F16B19/086 , Y10T29/49956 , B29K2307/04 , B29K2309/08
摘要： A joining method includes punching respective laminated plate materials by a rivet shaft portion of a SPR, forming a crimp portion at the front end of the rivet shaft portion, and fastening and joining the laminated plate materials between the rivet head portion and the crimp portion. Washers are laid on and brought into contact with respective opposite surfaces relative to joining surfaces of the laminated plate materials, the washers each having an inner hole through which the rivet shaft portion is allowed to pass, the washers are used as jigs at the time of the punching, the punching by means of the rivet shaft portion is performed along the inner holes of the washers, and the joining is performed so that the washers left between the rivet head and the crimp portion and the opposite surfaces.
摘要翻译： 接合方法包括通过SPR的铆钉轴部冲压各层压板材料，在铆钉轴部的前端形成压接部，并且将铆接头部和压接部之间的层叠板材紧固并接合。 洗衣机相对于层压板材的接合面铺设在相应的相对表面上，每个垫圈具有内孔，铆钉轴部分可以通过该内孔，垫圈在夹具时被用作夹具 通过冲压，沿着垫圈的内孔进行铆钉轴部的冲压，进行接合，使得垫圈保持在铆钉头和压接部之间以及相对的表面。
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7.发明申请公开(公告)号：US20130197000A1
公开(公告)日：2013-08-01
申请号：US13642639
申请日：2011-04-22
申请人： Hiroyuki Hasegawa , Shin Aizawa
发明人： Hiroyuki Hasegawa , Shin Aizawa
IPC分类号： A61K31/519 , A23L1/29
CPC分类号： A61K31/519 , A23L2/52 , A23L33/10 , C07D475/04
摘要： [Problem]To provide means for improving symptoms of cerebral dysfunction.[Solution Means]The inventor has newly found that peripheral administration of sepiapterin increases the bioavailability of aromatic monoamines in the brain. Accordingly, provided are a drug for preventing or improving cerebral dysfunction, which contains at least one of sepiapterin and its salt and also provided is a food and or drink for preventing or improving cerebral dysfunction, which contains at least one of sepiapterin and its salt. Unlike tetrahydrobiopterin, etc., sepiapterin is able to repress the lowering level of aromatic monoamines (such as serotonin, dopamine and noradrenaline) in neurons in the brain and also increase the bioavailability. Therefore, sepiapterin may be effective against cerebral dysfunction caused by the lowered level of aromatic monoamines in the brain in neurons in the brain, for example, central mental disorders such as depression, hyperphagia, autism, impaired consciousness and concentration, and cognitive disturbance as well as central motor disorders such as myotonia, rigidity and tremor.
摘要翻译： [问题]提供改善脑功能障碍症状的手段。 [解决方法]本发明人最近发现，sepiapterin的外周给药增加了脑中芳香族单胺的生物利用度。 因此，提供了预防或改善脑功能障碍的药物，其含有sepiapterin及其盐中的至少一种，并且还提供了含有sepiapterin及其盐中的至少一种的用于预防或改善脑功能障碍的食物和/或饮料。 与四氢生物喋呤等不同，sepiapterin能抑制大脑神经元中芳香族单胺（如5-羟色胺，多巴胺和去甲肾上腺素）的降低水平，同时也增加生物利用度。 因此，sepiapterin可能有效抵抗大脑神经元脑中芳香单胺含量降低引起的脑功能障碍，例如中枢性精神障碍如抑郁症，食欲过多，自闭症，意识障碍和认知障碍以及认知障碍 作为中枢运动障碍，如肌强直，僵硬和震颤。
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公开(公告)号：US08459582B2
公开(公告)日：2013-06-11
申请号：US12676255
申请日：2008-09-02
IPC分类号： B02C13/286
摘要： In a surface treating method of the present invention, a fluid suction passage 26 communicating with a fluid supply passage 25 via only a narrowed portion 27 is provided, so as to approximately concentrically surround the periphery of the fluid supply passage 25 having the narrowed portion 27 at one end thereof, and the sucking cavitation flow 5 is generated at the direct downstream of the narrowed portion 27, by sucking the processing fluid 8 into the fluid suction passage 26 using a suction pump 17, as well as a surface treating is performed on the treated surface 6a, by crushing the sucking cavitation flow 5 approximately perpendicular to the treated surface 6a.
摘要翻译： 在本发明的表面处理方法中，设置有仅通过狭窄部27与流体供给路25连通的流体吸入路26，大致同心地围绕具有变窄部27的流体供给路25的周边 并且通过使用抽吸泵17将处理流体8吸入流体吸入通路26，并且在狭窄部27的直接下游产生吸入气蚀流5，并且对 经处理的表面6a，通过将吸入空化流5大致垂直于处理表面6a进行破碎。
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公开(公告)号：US20120147221A1
公开(公告)日：2012-06-14
申请号：US13312918
申请日：2011-12-06
申请人： Hiroyuki Hasegawa
发明人： Hiroyuki Hasegawa
IPC分类号： H04N5/76
CPC分类号： H04N5/765 , G11B27/11 , H04N21/274 , H04N21/4223 , H04N21/4524 , H04N21/4882 , H04N21/84
摘要： In a case where a position information acquisition setting unit sets to acquire position information and in a case where a determination unit determines that the image data recorded in a recording medium is automatically transmitted to an external device, a transmission setting confirmation screen is displayed, so that the image data to which the position information is attached is prevented from being transmitted to the external device while the user does not intend to do so.
摘要翻译： 在位置信息获取设定单元设置获取位置信息的情况下，并且在确定单元确定记录在记录介质中的图像数据被自动发送到外部设备的情况下，显示发送设置确认屏幕，因此 当用户不打算这样做时，防止附加位置信息的图像数据被发送到外部设备。
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公开(公告)号：USD650643S1
公开(公告)日：2011-12-20
申请号：US29380339
申请日：2010-12-03
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