公开(公告)号：US06887721B2

公开(公告)日：2005-05-03

申请号：US10021259

申请日：2001-12-19

申请人： Hiroyuki Hasegawa ,  Tomonori Yamaoka ,  Yoshio Ishihara ,  Hiroshi Masusaki ,  Takayuki Satou ,  Katsumasa Suzuki ,  Hiroki Tokunaga

发明人： Hiroyuki Hasegawa ,  Tomonori Yamaoka ,  Yoshio Ishihara ,  Hiroshi Masusaki ,  Takayuki Satou ,  Katsumasa Suzuki ,  Hiroki Tokunaga

IPC分类号： H01L21/00 ,  C23C16/44 ,  C23C16/52 ,  H01L21/205 ,  H01L21/66

CPC分类号： C23C16/4408 ,  C23C16/4401 ,  C23C16/52

摘要： The present invention discloses a CVD apparatus which, together with being able to efficiently perform purging treatment after maintenance, uses for the purge gas a mixed gas of a gas having high thermal conductivity and an inert gas during heated flow purging treatment after maintenance to perform startup of the CVD apparatus while reducing the amount of time required for purging treatment. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times. In addition, in order to judge suitable maintenance times of semiconductor production apparatuses that perform corrosive gas treatment in a reaction chamber, the moisture concentration in reaction chamber is measured with moisture meter connected to the reaction chamber when performing the corrosive gas treatment, and maintenance times of the semiconductor production apparatus are determined according to changes in the moisture concentration when corrosive gas treatment is performed repeatedly. In addition, in order to measure the moisture of corrosive gas during processing while preventing obstruction of piping in a moisture monitoring apparatus and semiconductor production apparatus equipped therewith, a moisture monitoring apparatus, which is equipped with a pipe, of which one end is connected to reaction chamber into which corrosive gas flows, and a moisture meter connected to the other end of that pipe which measures the moisture contained in the corrosive gas introduced from the reaction chamber, is at least equipped with pipe heating mechanism that heats the pipe.

摘要翻译： 本发明公开了一种CVD装置，其能够在维护后能够有效地进行清洗处理，在维护后的加热流动清洗处理中，使用具有高导热性的气体和惰性气体的混合气体进行吹扫，以进行启动 的CVD装置，同时减少清洗处理所需的时间。 在半导体膜形成之前的清洗处理通过重复抽真空和引入惰性气体进行多次。 此外，为了判断在反应室中进行腐蚀性气体处理的半导体制造装置的合适的维护时间，在进行腐蚀性气体处理时，在与反应室连接的水分计测量反应室中的水分浓度，并进行维护时间 根据重复进行腐蚀性气体处理时的水分浓度的变化来确定半导体制造装置。 此外，为了在加工过程中测量腐蚀性气体的湿度，同时防止水分监测装置和配备的半导体制造装置中的管道的阻塞，配备有管道的水分监测装置，其一端连接到 腐蚀性气体流入的反应室和与该管的另一端连接的湿度计，其测量从反应室引入的腐蚀性气体中含有的水分，至少配备有加热管道的管道加热机构。

公开(公告)号：US06491758B1

公开(公告)日：2002-12-10

申请号：US09651255

申请日：2000-08-30

申请人： Hiroyuki Hasegawa ,  Tomonori Yamaoka ,  Hiroshi Masusaki ,  Takayuki Satou ,  Katsumasa Suzuki ,  Hiroki Tokunaga

发明人： Hiroyuki Hasegawa ,  Tomonori Yamaoka ,  Hiroshi Masusaki ,  Takayuki Satou ,  Katsumasa Suzuki ,  Hiroki Tokunaga

IPC分类号： C23C1600

CPC分类号： C23C16/4408 ,  C23C16/4401 ,  C23C16/52

摘要： A CVD apparatus is able to efficiently perform purging treatment after maintenance by using for the purge gas a mixed gas of a high thermal conductivity and an inert gas. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times. In addition, in order to judge suitable maintenance times, the moisture concentration in reaction chamber is measured with a moisture meter connected to the reaction chamber when performing a corrosive gas treatment, and maintenance times are determined according to changes in the moisture concentration when corrosive gas treatment is performed repeatedly. In addition, in order to measure the moisture of corrosive gas while preventing obstruction of piping in a moisture monitoring apparatus, a moisture monitoring apparatus, including a pipe, of which one end is connected to reaction chamber into which corrosive gas flows, and a moisture meter connected to the other end which measures the moisture contained in the corrosive gas introduced from the reaction chamber, is equipped with a pipe beating mechanism.

摘要翻译： CVD装置能够通过对清洗气体使用高导热性和惰性气体的混合气体而进行清洗处理。 在半导体膜形成之前的清洗处理通过重复抽真空和引入惰性气体进行多次。 此外，为了判断合适的维护时间，在进行腐蚀性气体处理时，用与反应室连接的水分计测定反应室中的水分浓度，并且根据腐蚀性气体中的水分浓度的变化来确定维护时间 治疗重复进行。 此外，为了在防止水分监测装置中的管道阻塞的同时测量腐蚀性气体的水分，包括管道的水分监测装置，其一端连接到腐蚀性气体流入的反应室中，并且水分 连接到测量从反应室引入的腐蚀性气体中的水分的另一端的仪表配备有管道打浆机构。

公开(公告)号：US06794204B2

公开(公告)日：2004-09-21

申请号：US10254601

申请日：2002-09-26

申请人： Hiroyuki Hasegawa ,  Tomonori Yamaoka ,  Yoshio Ishihara ,  Hiroshi Masusaki

发明人： Hiroyuki Hasegawa ,  Tomonori Yamaoka ,  Yoshio Ishihara ,  Hiroshi Masusaki

IPC分类号： G01R3126

CPC分类号： C23C16/4408 ,  C23C16/4401 ,  C23C16/52 ,  C23C16/54 ,  C30B25/14 ,  C30B25/165 ,  H01L21/67242 ,  Y10S438/906 ,  Y10S438/908 ,  Y10T29/41

摘要： A semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing is performed by a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content. Furthermore, the moisture content in the airtight space is measured by a first moisture measuring device which is connected to the airtight space, and thereafter, the substrate is inserted and ejected by a substrate carrying system, and a reactive gas is processed while measuring the moisture content in the reaction chamber by a second moisture measuring device, which is connected to the reaction chamber, after the moisture content in the airtight space is measured.

摘要翻译： 通过半导体制造装置可以通过正确调整处理条件，可以高精度地进行诸如选择性外延生长的反应气体处理的半导体制造方法，该半导体制造装置可以限制水分含量的增加，防止重金属污染等， 并研究了处理室和外部区域的含水量之间的相关性。 在提供基板时测量反应室和反应室的气体放电系统中的含水量，并且基于水分含量调节反应气体处理条件。 此外，气密空间中的水分含量通过连接到气密空间的第一湿度测量装置测量，然后由基板承载系统插入和喷射基板，并且在测量湿气的同时处理反应气体 在测量气密空间中的水分含量之后，通过与反应室连接的第二湿度测量装置在反应室中的含量。

公开(公告)号：US07033843B2

公开(公告)日：2006-04-25

申请号：US10696702

申请日：2003-10-30

申请人： Hiroyuki Hasegawa ,  Tomonori Yamaoka ,  Yoshio Ishihara ,  Hiroshi Masusaki

发明人： Hiroyuki Hasegawa ,  Tomonori Yamaoka ,  Yoshio Ishihara ,  Hiroshi Masusaki

IPC分类号： G01R31/26

CPC分类号： C23C16/4408 ,  C23C16/4401 ,  C23C16/52 ,  C23C16/54 ,  C30B25/14 ,  C30B25/165 ,  H01L21/67242 ,  Y10S438/906 ,  Y10S438/908 ,  Y10T29/41

摘要： A semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing is performed by a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content. Furthermore, the moisture content in the airtight space is measured by a first moisture measuring device which is connected to the airtight space, and thereafter, the substrate is inserted and ejected by a substrate carrying system, and a reactive gas is processed while measuring the moisture content in the reaction chamber by a second moisture measuring device, which is connected to the reaction chamber, after the moisture content in the airtight space is measured.

摘要翻译： 通过半导体制造装置可以通过正确调整处理条件，可以高精度地进行诸如选择性外延生长的反应气体处理的半导体制造方法，该半导体制造装置可以限制水分含量的增加，防止重金属污染等， 并研究了处理室和外部区域的含水量之间的相关性。 在提供基板时测量反应室和反应室的气体放电系统中的含水量，并且基于水分含量调节反应气体处理条件。 此外，气密空间中的水分含量通过连接到气密空间的第一湿度测量装置测量，然后由基板承载系统插入和喷射基板，并且在测量湿气的同时处理反应气体 在测量气密空间中的水分含量之后，通过与反应室连接的第二水分测量装置在反应室中的含量。

公开(公告)号：US06776805B2

公开(公告)日：2004-08-17

申请号：US09793124

申请日：2001-02-27

申请人： Hiroyuki Hasegawa ,  Tomonori Yamaoka ,  Yoshio Ishihara ,  Hiroshi Masusaki

发明人： Hiroyuki Hasegawa ,  Tomonori Yamaoka ,  Yoshio Ishihara ,  Hiroshi Masusaki

IPC分类号： H01L2100

CPC分类号： C23C16/4408 ,  C23C16/4401 ,  C23C16/52 ,  C23C16/54 ,  C30B25/14 ,  C30B25/165 ,  H01L21/67242 ,  Y10S438/906 ,  Y10S438/908 ,  Y10T29/41

摘要： A semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing is performed by a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content. Furthermore, the moisture content in the airtight space is measured by a first moisture measuring device which is connected to the airtight space, and thereafter, the substrate is inserted and ejected by a substrate carrying system, and a reactive gas is processed while measuring the moisture content in the reaction chamber by a second moisture measuring device, which is connected to the reaction chamber, after the moisture content in the airtight space is measured.

摘要翻译： 通过半导体制造装置可以通过正确调整处理条件，可以高精度地进行诸如选择性外延生长的反应气体处理的半导体制造方法，该半导体制造装置可以限制水分含量的增加，防止重金属污染等， 并研究了处理室和外部区域的含水量之间的相关性。 在提供基板时测量反应室和反应室的气体放电系统中的含水量，并且基于水分含量调节反应气体处理条件。 此外，气密空间中的水分含量通过连接到气密空间的第一湿度测量装置测量，然后由基板承载系统插入和喷射基板，并且在测量湿气的同时处理反应气体 在测量气密空间中的水分含量之后，通过与反应室连接的第二湿度测量装置在反应室中的含量。

公开(公告)号：US5703365A

公开(公告)日：1997-12-30

申请号：US545580

申请日：1995-11-20

申请人： Yoshio Ishihara ,  Hiroshi Masusaki ,  Shang-Qian Wu ,  Koh Matsumoto

发明人： Yoshio Ishihara ,  Hiroshi Masusaki ,  Shang-Qian Wu ,  Koh Matsumoto

IPC分类号： G01J3/433 ,  G01N21/39 ,  G01N21/35

CPC分类号： G01N21/39 ,  G01J3/433 ,  G01N21/3504 ,  G01N2021/399 ,  G01N21/3554

摘要： The present invention relates to a device and method for measuring an impurity in a trace concentration in a gas to be measured by means of infrared spectroscopic analysis employing a diode laser. In order to carry out analysis with high sensitivity and high accuracy, the gas to be measured is directed into sample cell 5 and placed in a low pressure state by means of pump 16. Infrared light from the wavelength region in which strong absorption peaks from the impurity can be obtained are oscillated from the diode laser 1, and a derivative absorption spectrum is measured by passing the infrared rays through sample cell 5 and reference cell 8 which is filled with the impurity alone. The spectrum for the gas to be measured and the spectrum for the impurity alone are compared, and the impurity is identified by confirming a plurality of absorption peaks originating from the impurity. Determination of the impurity is then carried out from absorption intensity of the strongest peak. In the case where molecules of the gaseous impurity form clusters in the gas to be measured, analysis is carried while dissociating the clusters by irradiating light having a photon energy of 0.5 eV or greater. The present invention is particularly suitable for carrying out analysis of trace quantities of impurities present in the gases which are used as materials for semiconductor manufacturing.

摘要翻译： PCT No.PCT / JP95 / 00523 Sec。 371日期：1995年11月20日 102（e）1995年11月20日日期PCT 1995年3月22日PCT公布。 公开号WO95 / 26497 日期：1995年10月5日本发明涉及通过使用二极管激光器的红外光谱分析来测量要测量的气体中的微量浓度的杂质的装置和方法。 为了以高灵敏度和高精度进行分析，将待测量的气体引入样品池5中，并通过泵16置于低压状态。来自波长区域的红外光来自 可以获得从二极管激光器1振荡的杂质，并且通过使红外线通过单独填充有杂质的样品池5和参考电池8来测量衍生吸收光谱。 比较待测气体的光谱和单独的杂质的光谱，通过确认源自杂质的多个吸收峰来鉴定杂质。 然后从最强峰的吸收强度进行杂质测定。 在气体杂质的分子在待测量的气体中聚集的情况下，通过照射光子能量为0.5eV以上的光来解离簇，进行分析。 本发明特别适用于对用作半导体制造材料的气体中存在的微量杂质进行分析。

公开(公告)号：US06800855B1

公开(公告)日：2004-10-05

申请号：US09472585

申请日：1999-12-27

申请人： Jie Dong ,  Katsumasa Suzuki ,  Hiroshi Masusaki ,  Koh Matsumoto

发明人： Jie Dong ,  Katsumasa Suzuki ,  Hiroshi Masusaki ,  Koh Matsumoto

IPC分类号： G01J502

CPC分类号： G01N21/39 ,  G01N21/3504

摘要： The present invention provides a spectroscopic method for analyzing isotopes which makes it possible to simplify a system for measurement and to identify isotopes with high accuracy and sensitivity and to carry out quantitative analysis. The spectroscopic method for analyzing isotopes uses a semiconductor laser beam having as a wavelength zone a 2000 nm-wavelength band as a beam source of wavelengths of the absorption spectra of the isotopes. A reference gas is used for identification of the isotopes where the gas contains collating components having two wavelengths (W1, W2) of well-known absorption spectra in wavelength bands close to the wavelengths (w1, w2) of the absorption spectra of the isotopes.

摘要翻译： 本发明提供了一种用于分析同位素的光谱方法，其使得可以简化测量系统并且以高精度和灵敏度鉴定同位素并进行定量分析。 用于分析同位素的分光方法使用具有2000nm波长带的波长区域的半导体激光束作为同位素吸收光谱的波长的光源。 参考气体用于鉴定同位素，其中气体包含具有接近于同位素吸收光谱的波长（w1，w2）的波长带的众所周知的吸收光谱的两个波长（W1，W2）的对照组分。

公开(公告)号：US06636316B1

公开(公告)日：2003-10-21

申请号：US09472251

申请日：1999-12-27

申请人： Koh Matsumoto ,  Jie Dong ,  Hiroshi Masusaki ,  Katsumasa Suzuki

发明人： Koh Matsumoto ,  Jie Dong ,  Hiroshi Masusaki ,  Katsumasa Suzuki

IPC分类号： G01N2100

CPC分类号： G01N21/39 ,  G01N21/3504

摘要： The present invention provides a spectroscopic method for analysing objects in a gas comprising a main ingredient and the objects, both of which the absorption spectra exist in the same wavelength range, with high precision and sensitivity by using a compact and simple single cell system. In accordance with an aspect of the present invention, there is disclosed a spectroscopic method for analysing objects in a sample gas using a laser beam comprising: i) a step of splitting a laser beam into a first laser beam and a second laser beam; ii) a step of transmitting said first laser beam into a sample cell where a sample gas is introduced, and measuring an intensity of a spectrum of said transmitted first laser beam; iii) a step, being performed while performing said step ii), of transmitting said second laser beam into a reference cell where a reference gas is introduced, and measuring an intensity of a spectrum of said transmitted second laser beam, wherein said reference gas comprises an ingredient having at least two spectral lines of which wavelengths in an absorption spectrum of said reference gas are already known; and iv) a step of identifying a wavelength of objects to be measured in said sample gas by comparing said spectrum of sample gas with said spectrum of reference gas using said at least two spectral lines of said reference gas as reference wavelengths.

摘要翻译： 本发明提供一种用于分析气体中的物体的分光方法，其中包括主要成分和物体，两者的吸收光谱都以相同的波长范围存在，通过使用紧凑且简单的单电池系统具有高精度和灵敏度。 根据本发明的一个方面，公开了一种用于使用激光束分析样品气体中的物体的分光方法，包括：i）将激光束分裂成第一激光束和第二激光束的步骤; ii）将所述第一激光束发射到导入样品气体的样品池中并测量所述透射的第一激光束的光谱强度的步骤; iii）在执行所述步骤ii）期间执行将所述第二激光束发射到引入参考气体的参考单元并测量所述透射的第二激光束的光谱强度的步骤，其中所述参考气体包括 具有至少两条光谱线的成分，其中所述参考气体的吸收光谱中的波长已知; 以及iv）通过使用所述参考气体的所述至少两个谱线作为参考波长，通过将所述样本气体的频谱与所述参考气体的频谱进行比较来识别所述样品气体中待测物体的波长的步骤。

公开(公告)号：US06483589B1

公开(公告)日：2002-11-19

申请号：US09611260

申请日：2000-07-06

申请人： Katsumasa Suzuki ,  Hiroshi Masusaki ,  Takayuki Satoh

发明人： Katsumasa Suzuki ,  Hiroshi Masusaki ,  Takayuki Satoh

IPC分类号： G01N2131

CPC分类号： G01N21/3504 ,  G01N21/39 ,  G01N2021/399

摘要： In order to provide a laser spectroscopy system of simple construction and free of the effect of the fringe noise and to provide a laser spectroscopy system in which a reference cell is efficiently installed with minimum cost and space, there is disclosed a laser spectroscopy system comprising: a tunable laser diode source for generating a laser beam used for spectroscopic analysis; a sample cell where a sample gas is introduced; a first photo detector for measuring an intensity of a laser beam transmitted through the sample cell and having a beam receiving face; a beam splitter for splitting a portion of the laser beam from the laser source; and a second photo detector for measuring an intensity of a splitted laser beam from the beam splitter and having a beam receiving face, wherein the at least one of beam receiving faces is tilted to be at a predetermined angle from an axis of laser beam.

摘要翻译： 为了提供一种结构简单且不受边缘噪声影响的激光光谱系统，并且提供一种激光光谱系统，其包括以下步骤：激光光谱系统，该系统包括： 用于产生用于光谱分析的激光束的可调激光二极管源; 导入样品气体的样品池; 第一光电检测器，用于测量透射通过样品池并具有光束接收面的激光束的强度; 分束器，用于分离来自激光源的激光束的一部分; 以及第二光电检测器，用于测量来自分束器的分裂激光束的强度并具有光束接收面，其中所述光束接收面中的至少一个倾斜到与激光束轴成预定角度。

公开(公告)号：US5821537A

公开(公告)日：1998-10-13

申请号：US887262

申请日：1997-07-02

申请人： Yoshio Ishihara ,  Hiroshi Masusaki ,  Shang-Qian Wu ,  Koh Matsumoto

发明人： Yoshio Ishihara ,  Hiroshi Masusaki ,  Shang-Qian Wu ,  Koh Matsumoto

IPC分类号： G01J3/433 ,  G01N21/39 ,  G01N21/35

CPC分类号： G01N21/39 ,  G01J3/433 ,  G01N21/3504 ,  G01N2021/399 ,  G01N21/3554

摘要： A device and method for measuring an impurity in a trace concentration in a gas to be measured by infrared spectroscopic analysis employing a diode laser are provided. In order to carry out analysis with high sensitivity and high accuracy, the gas to be measured is directed into sample cell 5 and placed in a low pressure state by a pump 16. Infrared light from the wavelength region in which strong absorption peaks from the impurity can be obtained are oscillated from the diode laser 1, and a derivative absorption spectrum is measured by passing the infrared rays through sample cell 5 and reference cell 8 which is filled with the impurity alone. The spectrum for the gas to be measured and the spectrum for the impurity alone are compared, and the impurity is identified by confirming a plurality of absorption peaks originating from the impurity. Determination of the impurity is then carried out from absorption intensity of the strongest peak. In the case where molecules of the gaseous impurity form clusters in the gas to be measured, analysis is carried while dissociating the clusters by irradiating light having a photon energy of 0.5 eV or greater. The device and method are particularly suitable for carrying out analysis of trace quantities of impurities present in the gases which are used as materials for semiconductor manufacturing.

摘要翻译： 提供了一种通过使用二极管激光的红外光谱分析来测量要测量的气体中的微量浓度的杂质的装置和方法。 为了以高灵敏度和高精度进行分析，将待测量的气体引入样品池5中并通过泵16置于低压状态。来自杂质的强吸收峰的红外光 可以从二极管激光器1振荡，并且通过使红外线通过单独填充有杂质的样品池5和参考单元8来测量衍生吸收光谱。 比较待测气体的光谱和单独的杂质的光谱，通过确认源自杂质的多个吸收峰来鉴定杂质。 然后从最强峰的吸收强度进行杂质测定。 在气体杂质的分子在待测量的气体中聚集的情况下，通过照射光子能量为0.5eV以上的光来解离簇，进行分析。 该装置和方法特别适用于对用作半导体制造材料的气体中存在的微量杂质进行分析。