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    Electron beam writing system
    1.
    发明授权
    Electron beam writing system 失效
    电子束写入系统

    公开(公告)号：US5650631A

    公开(公告)日：1997-07-22

    申请号：US470592

    申请日：1995-06-07

    申请人： Yasunari Sohda ,  Masahide Okumura ,  Yasuhiro Someda ,  Hidetoshi Satoh ,  Yoshinori Nakayama ,  Norio Saitou

    发明人： Yasunari Sohda ,  Masahide Okumura ,  Yasuhiro Someda ,  Hidetoshi Satoh ,  Yoshinori Nakayama ,  Norio Saitou

    IPC分类号： G21K5/04 ,  G03F7/20 ,  H01J37/04 ,  H01J37/09 ,  H01J37/147 ,  H01J37/305 ,  H01L21/027 ,  H01J37/30

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J2237/0435 ,  H01J2237/31774 ,  H01J2237/31776

    摘要： A blanking array is used for controlling an electron beam in an electron beam writing system. Electrodes in the array are formed in parallel and two sets of the parallel electrodes, orthogonal to one another, are used for dividing the electron beam into a plurality of individual exposure areas. The sets of parallel electrodes can be formed in one array by a wire mesh or in two separate arrays spaced closely together or farther apart at different focal point positions. The electrodes are provided to extend across an aperture, such as a square or triangular aperture. For a triangular aperture, the electrodes are made parallel to the hypotenuse of the triangle. The writing patterns are formed by combining the exposure areas. Control of each exposure area is realized by applying opposite polarity voltage to adjacent electrodes in order to deflect the portion of the beam passing between the adjacent electrodes. The deflected beam portions are blocked by a downstream aperture that permits the non-deflected electron beam portions to pass through for forming the patterns to be written.

    摘要翻译： 消隐阵列用于控制电子束写入系统中的电子束。 阵列中的电极平行地形成，并且彼此正交的两组平行电极被用于将电子束分成多个单独的曝光区域。 这些平行电极组可以通过丝网形成一个阵列，或者可以在不同的焦点位置处彼此间隔开或更远的两个分离的阵列中形成。 电极被设置成延伸穿过诸如正方形或三角形孔的孔。 对于三角形孔，电极与三角形的斜边平行。 通过组合曝光区域形成书写图案。 通过对相邻的电极施加相反极性的电压来实现对每个曝光区域的控制，以便偏转通过相邻电极的光束的部分。 偏转的光束部分被允许非偏转的电子束部分通过以形成待写入的图案的下游孔阻挡。

    Charged particle beam lithography apparatus for forming pattern on semi-conductor
    2.
    发明授权
    Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
    用于在半导体上形成图案的带电粒子束光刻设备

    公开(公告)号：US06329665B1

    公开(公告)日：2001-12-11

    申请号：US09621708

    申请日：2000-07-21

    申请人： Hiroyuki Ito ,  Yasunari Sohda ,  Yasuhiro Someda ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hidetoshi Satoh

    发明人： Hiroyuki Ito ,  Yasunari Sohda ,  Yasuhiro Someda ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hidetoshi Satoh

    IPC分类号： H01J37304

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776

    摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

    摘要翻译： 为了提供极大地增加图案投影数的高速和高精度的单元投影曝光装置，提供了安装传送孔和传输孔的多个模板掩模，并且通过驱动级定位，电子束通过 通过其他模板掩模的透射孔，同时用光束偏转装置在模板掩模上选择孔，将传播孔连续地提供给掩模传送方向，模板掩模在与梁一起传播的同时被移动，而其它模版 当指定的模板掩模孔组被曝光时，执行掩模转印。 重复这些操作，以便执行所有曝光处理。

    Charged particle beam lithography apparatus for forming pattern on semi-conductor
    5.
    发明授权
    Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
    用于在半导体上形成图案的带电粒子束光刻设备

    公开(公告)号：US06262428B1

    公开(公告)日：2001-07-17

    申请号：US09621577

    申请日：2000-07-21

    申请人： Hiroyuki Ito ,  Yasunari Sohda ,  Yasuhiro Someda ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hidetoshi Satoh

    发明人： Hiroyuki Ito ,  Yasunari Sohda ,  Yasuhiro Someda ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hidetoshi Satoh

    IPC分类号： H01J37304

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776

    摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

    摘要翻译： 为了提供极大地增加图案投影数的高速和高精度的单元投影曝光装置，提供了安装传送孔和传输孔的多个模板掩模，并且通过驱动级定位，电子束通过 通过其他模板掩模的透射孔，同时用光束偏转装置选择在模板掩模上的孔，传送孔被连续地用于掩模传送方向，模板掩模在与梁一起传播的同时移动，而其它模板掩模 当指定的模板掩模孔组被曝光时执行传送。 重复这些操作，以便执行所有曝光处理。

    Charged particle beam lithography apparatus for forming pattern on semi-conductor
    7.
    发明授权
    Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
    用于在半导体上形成图案的带电粒子束光刻设备

    公开(公告)号：US06441383B1

    公开(公告)日：2002-08-27

    申请号：US09814062

    申请日：2001-03-22

    申请人： Hiroyuki Ito ,  Yasunari Sohda ,  Yasuhiro Someda ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hidetoshi Satoh

    发明人： Hiroyuki Ito ,  Yasunari Sohda ,  Yasuhiro Someda ,  Yoshinori Nakayama ,  Masahide Okumura ,  Hidetoshi Satoh

    IPC分类号： H01J37304

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776

    摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil masks with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

    摘要翻译： 为了提供极大地增加图案投影数的高速和高精度的单元投影曝光装置，提供了安装传送孔和传输孔的多个模板掩模，并且通过驱动级定位，电子束通过 通过其他模板掩模的透射孔，同时用光束偏转装置在模板掩模上选择光圈，传送孔径被连续地用于掩模传送方向，模板掩模在与光束一起传播的同时被移动，而其它模版 当指定的模板掩模孔组被曝光时，执行掩模转印。 重复这些操作，以便执行所有曝光处理。

    Electron beam lithography apparatus and pattern forming method
    10.
    发明授权
    Electron beam lithography apparatus and pattern forming method 失效
    电子束光刻设备和图案形成方法

    公开(公告)号：US06511048B1

    公开(公告)日：2003-01-28

    申请号：US09191383

    申请日：1998-11-13

    申请人： Yasunari Sohda ,  Yasuhiro Someda ,  Hiroya Ohta ,  Takashi Matsuzaka ,  Norio Saitou ,  Yoshinori Nakayama

    发明人： Yasunari Sohda ,  Yasuhiro Someda ,  Hiroya Ohta ,  Takashi Matsuzaka ,  Norio Saitou ,  Yoshinori Nakayama

    IPC分类号： H01J3730

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776

    摘要： An electron beam lithography apparatus and a semiconductor device pattern forming method for precisely writing patterns near the periphery of a cell mask so that large scale integrated circuits and fine structure devices are fabricated at high yield rates. Cell figures with lower aperture rates are located peripherally and cell figures with higher aperture rates are located closer to a central portion within each of aperture groups furnished on a second mask of the inventive apparatus adopting cell projection. Illustratively, on a mask for use in semiconductor device fabrication, cell figures for forming line patterns and gate patterns are located centrally and cell figures for forming hole patterns are positioned peripherally in each aperture group. This allows the peripherally located figures to be written precisely in each aperture group.

    摘要翻译： 一种电子束光刻设备和用于在单元掩模的周围精确地写入图案的半导体器件图案形成方法，从而以高产率制造大规模集成电路和精细结构器件。 具有较低孔径率的单元图形位于外围，并且具有较高孔径率的单元图形位于更接近于采用单元投影的本发明设备的第二掩模上提供的每个孔组内的中心部分。 示例性地，在用于半导体器件制造的掩模上，用于形成线图案和栅极图案的单元图形位于中央，并且用于形成孔图案的单元图形周边地定位在每个孔组中。 这允许在每个孔径组中精确地写入外围定位的图形。