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1.发明授权Magnetic head assembly having two heads with the magnetic layer of one head angled between 80 to 100 relative to the gap of the other head, and method and apparatus using same 失效具有两个磁头的磁头组件，其中一个磁头的磁性层相对于另一个磁头的间隙成角度在80到100之间，以及使用其的方法和装置
公开(公告)号：US5654844A
公开(公告)日：1997-08-05
申请号：US440490
申请日：1995-05-12
IPC分类号： G11B5/265 , G11B5/008 , G11B5/147 , G11B5/187 , G11B5/23 , G11B5/29 , G11B5/48 , G11B5/53 , G11B5/027
CPC分类号： G11B5/1872 , G11B5/00865 , G11B5/187 , G11B5/29 , G11B5/488 , G11B5/531 , G11B5/534
摘要： A magnetic head assembly having two heads with the magnetic layer of one angled between 80.degree. to 100.degree. of the gap of the other, and method and apparatus using same. The angle formed on a magnetic tape by side surfaces of a laminated magnetic film of the first magnetic head and the surfaces of a magnetic gap of the second magnetic head are between 80.degree. and 100.degree..
摘要翻译： 一种磁头组件，其具有两个磁头，磁层的一个角度在另一个的间隙的80°至100°之间，以及使用其的方法和装置。 第一磁头的叠层磁性膜的表面和第二磁头的磁隙表面在磁带上形成的角度为80°〜100°。
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2.发明授权
公开(公告)号：US5796564A
公开(公告)日：1998-08-18
申请号：US578630
申请日：1996-01-05
CPC分类号： G11B5/3106 , G11B5/10 , G11B5/1475 , G11B5/17 , G11B5/3113
摘要： This invention has a principal object to eliminate, in a magnetic head and a method of manufacturing the same, the necessity of filling glass, etc. onto a magnetic film to thereby improve reliability of the magnetic head. This invention resides in a method of manufacturing a magnetic head including a pair of magnetic core half bodies opposite to each other, each of the magnetic core half bodies being such that a magnetic film is formed on a base, in which a thin film coil is formed at least at one surface of butting plane surfaces between these magnetic core half bodies, characterized in that, in forming the magnetic film on the base, recessed portions are formed in advance by ion milling, etc. at the base to form the magnetic film at the recessed portions. In this case, it is desirable that the magnetic film consists of a magnetic film having axis of easy magnetization in the depth direction of the magnetic gap and a magnetic film having axis of easy magnetization perpendicular to the axis of easy magnetization.
摘要翻译： PCT No.PCT / JP95 / 00884 Sec。 371日期1996年1月5日 102（e）日期1996年1月5日PCT提交1995年5月9日PCT公布。 公开号WO95 / 30984 日期：1995年11月16日本发明的主要目的是在磁头及其制造方法中消除将玻璃等填充到磁性膜上的必要性，从而提高磁头的可靠性。 本发明在于一种制造磁头的方法，所述磁头包括一对彼此相对的磁芯半体，每个磁芯半体使得在基底上形成磁性膜，其中薄膜线圈是 至少在这些磁芯半体之间的对接平面的一个表面上形成，其特征在于，在基底上形成磁性膜时，通过在基底处的离子铣削等预先形成凹部以形成磁性膜 在凹部处。 在这种情况下，理想的是，磁性膜由在磁隙的深度方向上容易磁化的轴的磁性膜和容易磁化的轴与容易磁化的轴垂直的磁性膜构成。
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公开(公告)号：US5734534A
公开(公告)日：1998-03-31
申请号：US762721
申请日：1996-12-10
CPC分类号： G11B5/10 , G11B5/127 , G11B5/1272 , G11B5/147 , G11B5/17
摘要： A magnetic head is made by fixing together two head halves 9 and 39. Recesses 10 and 40 are formed in glass layers 4 and 34 on the substrates 1 and 31 respectively of the head halves, and spiral coil patterns 11 and 41 are formed in the recesses. Apart from their inner end portions 11a and 41a the coil patterns are covered by insulating protective films 23 and 53. A plurality of sloping surfaces 4b, 34b are formed on the glass layers 4 and 34 at the locations of the inner end portions of the coil patterns, whereby a plurality of projections 4a, 34a are formed. The angle of slope .theta. of the sloping surfaces is above 30.degree. and below 90.degree.. The coil patterns 11 and 41 comprise copper plating layers 19 and 39; because the coil pattern inner end portions lie on the projections 4a, 34a their surfaces are high and exposed at the surfaces of the insulating protective films 23, 53, and gold films 16 and 46 are formed thereon. These gold films connect to each other and connect the coil patterns 11 and 41 to form one coil.
摘要翻译： 磁头通过将两个半部分9和39固定在一起而形成。凹部10和40分别形成在前半部分的基板1和31上的玻璃层4和34中，螺旋线圈图案11和41形成在 凹槽 除了它们的内端部11a和41a之外，线圈图案被绝缘保护膜23和53覆盖。在线圈的内端部分的位置处，在玻璃层4和34上形成多个倾斜表面4b，34b 由此形成多个突起4a，34a。 倾斜面的倾角θ在30°以上，90°以下。 线圈图案11和41包括镀铜层19和39; 由于线圈图案内端部位于突出部4a，34a上，所以表面高，露出在绝缘保护膜23,53的表面，金膜16,46形成在其上。 这些金膜彼此连接并且连接线圈图案11和41以形成一个线圈。
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公开(公告)号：US5786103A
公开(公告)日：1998-07-28
申请号：US672043
申请日：1996-06-26
IPC分类号： G11B5/31 , C22C38/00 , G11B5/127 , G11B5/147 , H01F10/13 , H01F10/14 , G11B5/66 , B32B9/00 , G11B5/70
CPC分类号： H01F10/131 , G11B5/147 , G11B5/3109 , Y10S428/90 , Y10T428/115
摘要： A soft magnetic film having a high saturation magnetic flux density and superior soft magnetic properties and capable of maintaining superior soft magnetic properties when worked to a magnetic head. The magnetic film is represented by the general formula of Fe.sub.x M.sub.y L.sub.z J.sub.u Q.sub.w, wherein M denotes at least one selected from the group of Ru, Cr, Ti, Mo, W and Rh, L denotes at least one selected from the group of Y, Hf, Zr, Ta and Nb, J denotes at least one of Al and Ga, Q denotes at least one of Si and Ge and x, y, z, u and w denote the proportions of respective atoms in atom %, and wherein the composition is given by 68.ltoreq.x
摘要翻译： 具有高饱和磁通密度和优异的软磁性能的软磁性膜，并且能够在加工到磁头时保持优异的软磁特性。 磁性膜由通式FexMyLzJuQw表示，其中M表示选自Ru，Cr，Ti，Mo，W和Rh中的至少一种，L表示选自Y，Hf，Zr中的至少一种 ，Ta和Nb，J表示Al和Ga中的至少一种，Q表示Si和Ge中的至少一种，x，y，z，u和w表示原子％的各原子的比例，并且其中给出组合物 通过68 10和10
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公开(公告)号：US5666249A
公开(公告)日：1997-09-09
申请号：US640987
申请日：1996-04-22
CPC分类号： G11B5/21 , G11B5/1274 , G11B5/17 , G11B5/29 , G11B5/531
摘要： A magnetic head is disclosed in which a pair of magnetic core halves, each having a magnetic metal film formed in the vicinity of at least a substrate surface facing a magnetic recording medium, are abutted to each other for defining a magnetic gap between the magnetic metal films, wherein a recess for forming a coil is formed in an abutting surface of at least one of the magnetic core halves and the coil formed by a thin film forming technique is arranged within the recess. A multi-channel magnetic head is also disclosed which includes a plurality of magnetic heads having different azimuth angles of the magnetic gaps, wherein each magnetic head is formed by abutting a pair of magnetic core halves to each other, each of the magnetic core halves having a magnetic metal film formed in the vicinity of at least a substrate surface facing a magnetic recording medium, for defining a magnetic gap between the magnetic metal films, and wherein a recess for forming a coil is formed in the abutting surface of at least one of the magnetic core halves, and the coil is formed in the recess by thin film forming technique. The methods for producing the magnetic head and the multi-channel magnetic head are also disclosed.
摘要翻译： 公开了一种磁头，其中一对磁芯半部分彼此邻接，以形成在与磁记录介质相对的至少基板表面附近形成的磁性金属膜，以在磁性金属 膜，其中在所述凹部内设置有用于形成线圈的凹部，所述凹部形成在至少一个所述磁芯半部和通过薄膜形成技术形成的所述线圈的邻接表面中。 还公开了一种多通道磁头，其包括具有磁隙的不同方位角的多个磁头，其中每个磁头通过将一对磁芯半体彼此邻接而形成，每个磁芯半部具有 形成在至少面对磁记录介质的基板表面附近的磁性金属膜，用于限定磁性金属膜之间的磁隙，并且其中用于形成线圈的凹部形成在至少一个 磁芯半部，并且通过薄膜形成技术在凹部中形成线圈。 还公开了用于制造磁头和多通道磁头的方法。
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公开(公告)号：US5715122A
公开(公告)日：1998-02-03
申请号：US698769
申请日：1996-08-16
摘要： A magnetic head with which electrical connection between the terminals of the head and other devices is easy, which is suitable for the mass production of magnetic recording/reproducing equipment and which is highly reliable comprises a pair of bases facing each other, a thin film coil formed on at least one of the bases, and a terminal portion connected to the thin film coil formed on the same base; a portion of the other base is cut away and the terminal portion is exposed at this cutaway portion and the terminal portion is formed at the cutaway portion on a surface intersecting the main surface of the magnetic head at an obtuse angle.
摘要翻译： 一种磁头，其头部和其他装置的端子之间的电气连接容易，适用于大量生产磁记录/再现设备并且高可靠性的磁头包括一对彼此相对的基座，薄膜线圈 形成在所述基底中的至少一个上，以及与形成在所述基底上的所述薄膜线圈连接的端子部; 另一个基座的一部分被切掉，并且端子部分在该切口部分露出，并且端子部分以钝角形成在与磁头的主表面相交的表面上的切口部分。
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公开(公告)号：US20100328992A1
公开(公告)日：2010-12-30
申请号：US12817327
申请日：2010-06-17
申请人： Hiroshi Kano , Yutaka Higo , Tetsuya Yamamoto , Hiroyuki Ohmori , Masanori Hosomi , Shinichiro Kusunoki , Yuki Oishi , Kazutaka Yamane , Kazuhiro Bessho , Minoru Ikarashi
发明人： Hiroshi Kano , Yutaka Higo , Tetsuya Yamamoto , Hiroyuki Ohmori , Masanori Hosomi , Shinichiro Kusunoki , Yuki Oishi , Kazutaka Yamane , Kazuhiro Bessho , Minoru Ikarashi
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/005 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C17/16 , G11C29/50 , G11C2029/4402 , Y10S977/935
摘要： A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not.
摘要翻译： 存储器包括：多个存储器件，每个存储器件包括隧道磁阻效应器件，其包含磁化方向可反转的磁化自由层，包括绝缘材料的隧道势垒层和与之相关的磁化固定层 经由具有固定的磁化方向的隧道势垒层到达磁化自由层; 使用存储装置的磁化自由层的磁化方向记录信息的随机存取存储区域; 以及根据存储器件的隧道势垒层的故障是否记录信息的只读存储区域。
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公开(公告)号：US20100314673A1
公开(公告)日：2010-12-16
申请号：US12796802
申请日：2010-06-09
申请人： Kazutaka Yamane , Masanori Hosomi , Hiroshi Kano , Hiroyuki Ohmori , Minoru Ikarashi , Tetsuya Yamamoto , Kazuhiro Bessho , Yutaka Higo , Yuki Oishi , Shinichiro Kusunoki
发明人： Kazutaka Yamane , Masanori Hosomi , Hiroshi Kano , Hiroyuki Ohmori , Minoru Ikarashi , Tetsuya Yamamoto , Kazuhiro Bessho , Yutaka Higo , Yuki Oishi , Shinichiro Kusunoki
IPC分类号： H01L27/115
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3277 , H01L43/08 , Y10S977/933 , Y10S977/935
摘要： A memory device includes: a memory layer that retains information based on a magnetization state of a magnetic material, a first intermediate layer and a second intermediate layer that are provided to sandwich the memory layer and are each formed of an insulator, a first fixed magnetic layer disposed on an opposite side of the first intermediate layer from the memory layer, a second fixed magnetic layer disposed on an opposite side of the second intermediate layer from the memory layer, and a nonmagnetic conductive layer provided between either the first intermediate layer or the second intermediate layer and the memory layer, the memory device being configured so that spin-polarized electrons are injected thereinto in a stacking direction to change the magnetization direction of the memory layer, thereby storing information in the memory layer.
摘要翻译： 存储器件包括：存储层，其基于磁性材料的磁化状态保持信息，第一中间层和第二中间层，其被设置为夹持存储层，并且各自由绝缘体，第一固定磁体 层，设置在与存储层相反的第一中间层的相对侧上;第二固定磁性层，设置在与存储层相反的第二中间层的相反侧;以及非磁性导电层，设置在第一中间层或第二中间层之间 第二中间层和存储层，存储器件被配置为使得自旋极化电子在层叠方向上被注入到其中以改变存储层的磁化方向，从而将信息存储在存储层中。
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公开(公告)号：US20100135068A1
公开(公告)日：2010-06-03
申请号：US12629660
申请日：2009-12-02
申请人： Minoru Ikarashi , Yutaka Higo , Masanori Hosomi , Hiroshi Kano , Shinichiro Kusunoki , Hiroyuki Ohmori , Yuki Oishi , Tetsuya Yamamoto , Kazutaka Yamane
发明人： Minoru Ikarashi , Yutaka Higo , Masanori Hosomi , Hiroshi Kano , Shinichiro Kusunoki , Hiroyuki Ohmori , Yuki Oishi , Tetsuya Yamamoto , Kazutaka Yamane
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228
摘要： A resistance-change memory device is provided and includes a stack constituting a tunnel magnetoresistance effect element that has a magnetic layer in which a direction of magnetization is switchable and that is formed on a conductive layer, and the stack is included in a resistance-change memory cell performing data writing utilizing a spin transfer effect caused by current injection. The stack is formed such that a line connecting centers of respective layers of the stack is tilted with respect to a direction perpendicular to a surface of the conductive layer having the stack formed thereon.
摘要翻译： 提供一种电阻变化存储器件，并且包括构成隧道磁阻效应元件的堆叠体，该堆叠层具有其中磁化方向可切换并形成在导电层上的磁性层，并且该堆叠被包括在电阻变化 使用由电流注入引起的自旋转移效应来执行数据写入的存储单元。 堆叠形成为使得连接堆叠的各层的中心的线相对于垂直于其上形成有叠层的导电层的表面的方向倾斜。
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公开(公告)号：US08437180B2
公开(公告)日：2013-05-07
申请号：US12795933
申请日：2010-06-08
申请人： Yutaka Higo , Masanori Hosomi , Minoru Ikarashi , Hiroshi Kano , Shinichiro Kusunoki , Hiroyuki Ohmori , Yuki Oishi , Kazutaka Yamane , Tetsuya Yamamoto , Kazuhiro Bessho
发明人： Yutaka Higo , Masanori Hosomi , Minoru Ikarashi , Hiroshi Kano , Shinichiro Kusunoki , Hiroyuki Ohmori , Yuki Oishi , Kazutaka Yamane , Tetsuya Yamamoto , Kazuhiro Bessho
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161
摘要： A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more.
摘要翻译： 存储器包括：存储器件，其具有存储数据作为磁体的磁化状态的数据和磁化方向的磁化固定层，该磁化固定层通过介于存储层和磁化固定层之间的非磁性层固定，并存储 当存储层和磁化固定层的堆叠方向上流动的写入电流被施加时，通过改变存储层的磁化方向来改变存储层中的数据; 以及电压控制单元，其通过使用由两个或更多个独立脉冲串构成的写入电压将由两个或更多个独立脉冲串构成的写入电流提供给存储器件。
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