摘要:
A solid-state imaging device includes: an imaging region including a plurality of light-receiving parts; a first transfer section provided on the imaging region and transferring, in a first direction, signals generated by the light-receiving parts; a second transfer section provided at a first side of the imaging region and transferring, in a second direction intersecting the first direction, the signals transferred from the first transfer section; an output circuit for outputting the signals; and bonding pads provided at the first side of the imaging region with the second transfer section sandwiched between the imaging region and the bonding pads. The bonding pads are arranged in a plurality of rows each extending in the second direction. Each of the bonding pads in one of the rows at least partially overlaps one of the bonding pads in another one of the rows when viewed in the first direction.
摘要:
A solid-state imaging device includes: an imaging region including a plurality of light-receiving parts; a first transfer section provided on the imaging region and transferring, in a first direction, signals generated by the light-receiving parts; a second transfer section provided at a first side of the imaging region and transferring, in a second direction intersecting the first direction, the signals transferred from the first transfer section; an output circuit for outputting the signals; and bonding pads provided at the first side of the imaging region with the second transfer section sandwiched between the imaging region and the bonding pads. The bonding pads are arranged in a plurality of rows each extending in the second direction. Each of the bonding pads in one of the rows at least partially overlaps one of the bonding pads in another one of the rows when viewed in the first direction.
摘要:
A solid-state imaging device includes: an imaging region including a plurality of light-receiving parts; a first transfer section provided on the imaging region and transferring, in a first direction, signals generated by the light-receiving parts; a second transfer section provided at a first side of the imaging region and transferring, in a second direction intersecting the first direction, the signals transferred from the first transfer section; an output circuit for outputting the signals; and bonding pads provided at the first side of the imaging region with the second transfer section sandwiched between the imaging region and the bonding pads. The bonding pads are arranged in a plurality of rows each extending in the second direction. Each of the bonding pads in one of the rows at least partially overlaps one of the bonding pads in another one of the rows when viewed in the first direction.
摘要:
A solid state image sensor capable of preventing image degradation, such as shading and ringing, from occurring in an image portion along the left edge of a screen. The solid state image sensor includes, in addition to a horizontal drive circuit that generates a horizontal drive pulse for driving a horizontal register, a pseudo-horizontal drive circuit that generates a pseudo-horizontal drive pulse successive to the horizontal drive pulse during a horizontal blanking interval. The horizontal drive circuit and pseudo-horizontal drive circuit are connected to a horizontal driver power supply unit, which generates, during the horizontal blanking interval, a current that is equal to a current generated by the horizontal driver power supply unit during an effective interval. This arrangement can prevent any power supply ripples from occurring immediately after the beginning of the effective interval.
摘要:
The solid state, image pickup device of the present invention includes a set of vertical registers. Each of the vertical registers includes a transfer channel and a group of transfer electrodes driven by a vertical driving pulse and formed by crossing the transfer channel, and the group of transfer electrodes includes at least one first transfer electrode and at least one second transfer electrode. Each of the vertical registers includes first contacts which electrically connect the group of transfer electrodes to the intermediate layer of polysilicon and second contacts which electrically connect the intermediate layer of polysilicon to the aluminum wiring layer. The first contacts and the second contacts are respectively formed over the group of transfer electrodes.
摘要:
Shunt wirings (12) in the form of a conductive light intercepting film which covers over vertical CCD registers and also serves to supply power, project into locations between adjacent photoelectric transducers (11) in the vertical direction, and the distance between the projecting portions of adjacent ones of the metal wirings is set to 0.2 .mu.m or less and is limited to a distance with which an electric field between adjacent ones of the metal wirings is 10.sup.7 V/cm or less and the adjacent metal wirings do not suffer from short-circuiting.
摘要:
A solid state image sensor capable of preventing image degradation, such as shading and ringing, from occurring in an image portion along the left edge of a screen. The solid state image sensor includes, in addition to a horizontal drive circuit that generates a horizontal drive pulse for driving a horizontal register, a pseudo-horizontal drive circuit that generates a pseudo-horizontal drive pulse successive to the horizontal drive pulse during a horizontal blanking interval. The horizontal drive circuit and pseudo-horizontal drive circuit are connected to a horizontal driver power supply unit, which generates, during the horizontal blanking interval, a current that is equal to a current generated by the horizontal driver power supply unit during an effective interval. This arrangement can prevent any power supply ripples from occurring immediately after the beginning of the effective interval.
摘要:
Signal charges are photoelectrically generated by a plurality of photodiodes, transferred through a transfer register to a charge detection capacitance and sensed through a floating junction, as a potential change of the charge detection capacitance to be amplified and output at an output amplifier composed of a plurality of stages of driver transistors, in which a field insulation film of a first stage driver transistor is formed, under a gate electrode, with a trapezoidal region left so that the gate electrode has a width thereof varied to be wider at a source end than at a drain end, permitting an increased reduction of the charge detection capacitance.