公开(公告)号：US4812201A

公开(公告)日：1989-03-14

申请号：US73978

申请日：1987-07-15

申请人： Hiroyuki Sakai ,  Kazutoshi Yoshioka ,  Kimiharu Matsumura ,  Keisuke Shigaki ,  Yutaka Amemiya ,  Shunichi Iimuro ,  Haruhiko Yoshioka ,  Teruhiko Onoe

发明人： Hiroyuki Sakai ,  Kazutoshi Yoshioka ,  Kimiharu Matsumura ,  Keisuke Shigaki ,  Yutaka Amemiya ,  Shunichi Iimuro ,  Haruhiko Yoshioka ,  Teruhiko Onoe

IPC分类号： G03F7/42 ,  H01L21/311 ,  H01L21/302

CPC分类号： H01L21/31138 ,  G03F7/42

摘要： A method and an apparatus, both for ashing unnecessary layers such as a photoresist layer, formed on a semiconductor wafer, by applying ozone to the layer, are disclosed. An ashing gas containing oxygen atom radical, or containing oxygen gas and an ashing-promoting gas, is applied to the layer, thereby ashing the layer readily and efficiently. The surface temperature of the layer is set at a prescribed value, and the ashing gas is applied uniformly onto the entire surface of the layer, or onto a part thereof, thus ashing the whole layer, or a part thereof, uniformly at a high rate, and the end-point of the ashing process is detected, thereby to enhance the efficiency of the ashing process.

摘要翻译： 公开了一种通过在层上施加臭氧来形成在半导体晶片上形成的诸如光致抗蚀剂层等不必要层的方法和装置。 含有氧原子基团或含有氧气和促进灰分的气体的灰化气体被施加到该层上，从而使层容易且有效地灰化。 将层的表面温度设定为规定值，将灰化气体均匀地涂布在层的整个表面上或其一部分上，从而以高的比例均匀地灰化整个层或其一部分 ，并且检测灰化过程的终点，从而提高灰化过程的效率。

公开(公告)号：US4455609A

公开(公告)日：1984-06-19

申请号：US301012

申请日：1981-09-10

申请人： Kiyonari Inamura ,  Yasuo Ueda ,  Nobumasa Furushima ,  Keisuke Shigaki

发明人： Kiyonari Inamura ,  Yasuo Ueda ,  Nobumasa Furushima ,  Keisuke Shigaki

IPC分类号： G06Q50/24 ,  A61N5/10 ,  G01T1/02 ,  G06Q50/22 ,  G01T1/16

CPC分类号： A61N5/1048 ,  G01T1/02 ,  A61N5/103

摘要： Apparatus for realtime fast reconstruction and display of dose distribution which calculates the dose of absorbed radiation in an irradiated area defined by coordinates and displays the results of the calculation. The apparatus comprises an input unit capable of setting parameters in the form of time-continuous quantities; a dedicated digital computer serving to control the input by the input unit; and a dedicated fast reconstructer for calculating the absorbed dose for each coordinate in the exposed area at a high speed by decomposing calculation formulae necessary for obtaining isodose curves on the basis of the parameter set in the input unit and effecting parallel calculation of the decomposed formulae, thereby obtaining the isodose curves; and video display for storing and displaying the isodose curves classified in terms of different isodose levels. The calculation is normally cyclically repeated to provide a motion picture of the dose distribution when the magnitude of the parameters is varied.

摘要翻译： 用于实时快速重构和显示剂量分布的装置，其计算由坐标定义的照射区域中的吸收辐射的剂量并显示计算结果。 该装置包括能够以时间连续量的形式设定参数的输入单元; 专用数字计算机，用于控制输入单元的输入; 以及专用快速重构器，用于通过根据输入单元中设置的参数分解获得等剂量曲线所需的计算公式，并且对分解公式进行并行计算，计算高速曝光区域中每个坐标的吸收剂量， 从而获得等剂量曲线; 和用于存储和显示根据不同等剂量水平分类的等剂量曲线的视频显示。 通常循环重复计算，以在参数的大小变化时提供剂量分布的运动图像。

公开(公告)号：US5028955A

公开(公告)日：1991-07-02

申请号：US480005

申请日：1990-02-14

申请人： Yasushi Hayashida ,  Noriyuki Anai ,  Osamu Hirakawa ,  Masami Akimoto ,  Yasuhiro Sakamoto ,  Keisuke Shigaki ,  Masashi Moriyama

发明人： Yasushi Hayashida ,  Noriyuki Anai ,  Osamu Hirakawa ,  Masami Akimoto ,  Yasuhiro Sakamoto ,  Keisuke Shigaki ,  Masashi Moriyama

IPC分类号： G03F7/20

CPC分类号： G03F7/70725 ,  G03F7/2051

摘要： An exposure apparatus of this invention is used in an exposure process of semiconductor and LCD devices. The exposure apparatus includes a stage on which a semiconductor wafer is placed, a rotating mechanism for rotating the stage, a radiation unit arranged to oppose a support surface of the stage, a slider mechanism for reciprocating the radiation unit along a straight line passing through the center of the support surface of the stage, an exposure range input unit for inputting a desired exposure range of the wafer, an exposure range memory unit for storing the input exposure range, a CCD image sensor for detecting a reference position of the wafer, a relative position detector for detecting a relative position between the detected reference position and the radiation unit, a controller for controlling the sliding mechanism in correspondence with the relative position and the exposure range, and a light amount control mechanism for controlling an amount of light radiated from the irradiation mechanism to the wafer in correspondence with the relative position and the exposure range.

摘要翻译： 本发明的曝光装置用于半导体和LCD装置的曝光处理。 曝光装置包括其上放置有半导体晶片的台，用于旋转台的旋转机构，布置成与舞台的支撑表面相对的辐射单元，用于使辐射单元沿着穿过 舞台的支撑表面的中心，用于输入晶片的期望曝光范围的曝光范围输入单元，用于存储输入曝光范围的曝光范围存储单元，用于检测晶片的参考位置的CCD图像传感器， 相对位置检测器，用于检测检测到的基准位置和辐射单元之间的相对位置，控制器，用于根据相对位置和曝光范围来控制滑动机构;以及光量控制机构，用于控制从 对应于相对位置和曝光范围的到晶片的照射机构。