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公开(公告)号：US06268013B1
公开(公告)日：2001-07-31
申请号：US09299573
申请日：1999-04-27
IPC分类号： B05D312
CPC分类号： B05C11/08
摘要： Disclosed herein is a method and an apparatus for applying a coating liquid to an object from a liquid-applying member at a first prescribed position, thereby forming a film on the object. Before the coating liquid at the first position, the coating liquid is applied at a second predetermined position. An impurity-detecting device detects the impurities contained in the coating liquid applied at the second position. A particle-counting device is provided, and a switching device is provided on a liquid-supplying pipe extending from a source of the coating liquid to the liquid-applying member. The switching device switches the supply of the coating liquid between the liquid-applying member and the impurity-detecting device. The impurities in the coating liquid can thereby monitored.
摘要翻译： 本发明公开了一种在第一规定位置从液体施加部件向物体施加涂布液的方法和装置，从而在物体上形成膜。 在第一位置的涂布液体之前，将涂布液施加在第二预定位置。 杂质检测装置检测在第二位置施加的涂布液中所含的杂质。 提供了粒子计数装置，并且在从涂布液的源向液体施加部件延伸的液体供给管上设置有开关装置。 开关装置切换液体施加构件和杂质检测装置之间的涂布液的供给。 从而可以监测涂布液中的杂质。
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公开(公告)号：US06228561B1
公开(公告)日：2001-05-08
申请号：US08791618
申请日：1997-01-31
IPC分类号： G03F716
摘要： A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.
摘要翻译： 将抗蚀剂溶液的溶剂从溶剂供应喷嘴滴落到由旋转卡盘保持的半导体晶片的表面上。 半导体晶片通过旋转卡盘旋转，以将抗蚀剂溶液扩散到半导体晶片W的整个表面上。同时，将抗蚀剂溶液从抗蚀剂溶液供应喷嘴滴落到半导体晶片上并在溶剂之后扩散。 在处理过程中，通过关闭处理容器的盖子将处理空间与外部空气隔离，将喷射的溶剂供入处理空间。 因此，处理空间被溶剂雾填满。 在提供有溶剂的处理空间中，可以抑制溶剂从抗蚀剂溶液中的蒸发。 在半导体晶片W的边缘上形成具有均匀膜厚的抗蚀剂溶液膜。
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公开(公告)号：US6051349A
公开(公告)日：2000-04-18
申请号：US386459
申请日：1999-08-31
申请人： Kazutoshi Yoshioka , Kunie Ogata
发明人： Kazutoshi Yoshioka , Kunie Ogata
CPC分类号： G03F7/3021 , G03F7/16 , G03F7/162 , G03F7/38
摘要： Disclosed is a resist coating-developing method and apparatus including (a) a setting step for setting a target value and an allowable range thereof, (b) a resist-coating step, (c) a pre-baking step, (d) a first cooling step, (e) a light-exposure step, (f) a line width measuring step for measuring a line width of a latent image, (g) a post-baking step, (h) a second cooling step, (i) a developing step, (j) a judging step determining whether or not the value of the line width of the latent image measured in the step (f) falls within the allowable range of the target value set in the step (a), (k) a calculating step for calculating a difference between the measured value of the latent image line width and the target value, and (l) a correcting step for correcting the process condition in at least one previous step.
摘要翻译： 公开了一种抗蚀剂涂布显影方法和装置，包括（a）设定目标值和其允许范围的设定步骤，（b）抗蚀剂涂布步骤，（c）预烘烤步骤，（d） 第一冷却步骤，（e）曝光步骤，（f）用于测量潜像的线宽的线宽测量步骤，（g）后烘烤步骤，（h）第二冷却步骤，（i （j）判断步骤，判定步骤（f）中测得的潜像线宽度的值是否在步骤（a）中设定的目标值的容许范围内， k）用于计算潜像线宽度的测量值与目标值之间的差的计算步骤，以及（l）用于在至少一个前一步骤中校正处理条件的校正步骤。
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公开(公告)号：US06002108A
公开(公告)日：1999-12-14
申请号：US5188
申请日：1998-01-09
申请人： Kazutoshi Yoshioka
发明人： Kazutoshi Yoshioka
CPC分类号： G03F7/38
摘要： The baking apparatus of the present invention comprises a casing surrounding a substrate W having a pattern-exposed resist film, a hot plate for heating the substrate in the casing, gas supply mechanisms for supplying a H.sub.2 O component containing humidity gas into the casing. The H.sub.2 O component included in the humidity gas is allowed to react with the resist film by introducing the humidity gas into the casing while the substrate is being heated by the hot plate, thereby rendering either an irradiate portion or a non-irradiate portion of the resist film, soluble in alkali.
摘要翻译： 本发明的烘烤装置包括围绕具有图案曝光的抗蚀剂膜的基板W的壳体，用于加热壳体中的基板的加热板，用于将含有湿气的H 2 O成分供给到壳体中的气体供给机构。 包含在湿气中的H 2 O成分可以通过将热气体加热而将湿气引入壳体中而与抗蚀剂膜反应，从而使抗蚀剂的照射部分或非照射部分 薄膜，溶于碱。
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5.发明授权
公开(公告)号：US5968691A
公开(公告)日：1999-10-19
申请号：US16728
申请日：1998-01-30
申请人： Kazutoshi Yoshioka , Kunie Ogata
发明人： Kazutoshi Yoshioka , Kunie Ogata
CPC分类号： G03F7/3021 , G03F7/16 , G03F7/162 , G03F7/38
摘要： Disclosed is a resist coating-developing method, including (a) a setting step for setting a target value and an allowable range thereof, (b) a resist-coating step, (c) a pre-baking step, (d) a first cooling step, (e) a light-exposure step, (f) a line width measuring step for measuring a line width of a latent image, (g) a post-baking step, (h) a second cooling step, (i) a developing step, (j) a judging step determining whether or not the value of the line width of the latent image measured in step (f) falls within the allowable range of the target value set in step (a), (k) a calculating step determining a difference between the measured value of the latent image line width and the target value, and (l) a correcting step for correcting the process condition in at least one previous step.
摘要翻译： 公开了一种抗蚀剂涂布显影方法，包括（a）设定目标值和其允许范围的设定步骤，（b）抗蚀剂涂布步骤，（c）预烘焙步骤，（d）第一 冷却步骤，（e）曝光步骤，（f）用于测量潜像的线宽的线宽测量步骤，（g）后烘烤步骤，（h）第二冷却步骤，（i） 显影步骤，（j）判断步骤，确定在步骤（f）中测量的潜像的线宽的值是否落入步骤（a），（k）中设定的目标值的允许范围内 计算步骤，确定潜像线宽度的测量值与目标值之间的差异，以及（l）用于在至少一个前一步骤中校正处理条件的校正步骤。
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公开(公告)号：US5938847A
公开(公告)日：1999-08-17
申请号：US915737
申请日：1997-08-21
CPC分类号： B05C11/08
摘要： Disclosed herein is a method and an apparatus for applying a coating liquid to an object from a liquid-applying member at a first prescribed position, thereby forming a film on the object. Before the coating liquid at the first position, the coating liquid is applied at a second predetermined position. An impurity-detecting device detects the impurities contained in the coating liquid applied at the second position. A particle-counting device is provided, and a switching device is provided on a liquid-supplying pipe extending from a source of the coating liquid to the liquid-applying member. The switching device switches the supply of the coating liquid between the liquid-applying member and the impurity-detecting device. The impurities in the coating liquid can thereby monitored.
摘要翻译： 本发明公开了一种在第一规定位置从液体施加部件向物体施加涂布液的方法和装置，从而在物体上形成膜。 在第一位置的涂布液体之前，将涂布液施加在第二预定位置。 杂质检测装置检测在第二位置施加的涂布液中所含的杂质。 提供了粒子计数装置，并且在从涂布液的源向液体施加部件延伸的液体供给管上设置有开关装置。 开关装置切换液体施加构件和杂质检测装置之间的涂布液的供给。 从而可以监测涂布液中的杂质。
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公开(公告)号：US4812201A
公开(公告)日：1989-03-14
申请号：US73978
申请日：1987-07-15
申请人： Hiroyuki Sakai , Kazutoshi Yoshioka , Kimiharu Matsumura , Keisuke Shigaki , Yutaka Amemiya , Shunichi Iimuro , Haruhiko Yoshioka , Teruhiko Onoe
发明人： Hiroyuki Sakai , Kazutoshi Yoshioka , Kimiharu Matsumura , Keisuke Shigaki , Yutaka Amemiya , Shunichi Iimuro , Haruhiko Yoshioka , Teruhiko Onoe
IPC分类号： G03F7/42 , H01L21/311 , H01L21/302
CPC分类号： H01L21/31138 , G03F7/42
摘要： A method and an apparatus, both for ashing unnecessary layers such as a photoresist layer, formed on a semiconductor wafer, by applying ozone to the layer, are disclosed. An ashing gas containing oxygen atom radical, or containing oxygen gas and an ashing-promoting gas, is applied to the layer, thereby ashing the layer readily and efficiently. The surface temperature of the layer is set at a prescribed value, and the ashing gas is applied uniformly onto the entire surface of the layer, or onto a part thereof, thus ashing the whole layer, or a part thereof, uniformly at a high rate, and the end-point of the ashing process is detected, thereby to enhance the efficiency of the ashing process.
摘要翻译： 公开了一种通过在层上施加臭氧来形成在半导体晶片上形成的诸如光致抗蚀剂层等不必要层的方法和装置。 含有氧原子基团或含有氧气和促进灰分的气体的灰化气体被施加到该层上，从而使层容易且有效地灰化。 将层的表面温度设定为规定值，将灰化气体均匀地涂布在层的整个表面上或其一部分上，从而以高的比例均匀地灰化整个层或其一部分 ，并且检测灰化过程的终点，从而提高灰化过程的效率。
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公开(公告)号：US06168667A
公开(公告)日：2001-01-02
申请号：US09085758
申请日：1998-05-27
申请人： Kazutoshi Yoshioka
发明人： Kazutoshi Yoshioka
IPC分类号： C23C1600
CPC分类号： H01L21/67173 , H01L21/67178 , H01L21/67184 , H01L21/67745 , Y10S414/135 , Y10S414/137 , Y10S414/14 , Y10S414/141
摘要： A resist-processing apparatus comprising a plurality of first processing units, a second processing unit, a first transport unit, a second transport unit, and an interface section. The first processing units are designed to process a wafer, and the second processing unit to process the wafer. The first transport unit has a first arm mechanism for loading and unloading the wafer into and from each of the first processing units. The second transport unit opposes the first transport unit, with the first processing units located between the first transport unit and the second transport unit. The second transport unit has a second arm mechanism for loading and unloading the wafer into and from at least one of the first processing units and into and from the second processing unit. The interface section is to be provided adjacent to an exposure apparatus. The first arm mechanism transfers the wafer between the first transport unit and the exposure apparatus.
摘要翻译： 一种抗蚀剂处理设备，包括多个第一处理单元，第二处理单元，第一传送单元，第二传送单元和接口部分。 第一处理单元被设计为处理晶片，并且第二处理单元用于处理晶片。 第一传送单元具有用于将晶片装载到每个第一处理单元并从每个第一处理单元卸载晶片的第一臂机构。 第二传送单元与第一传送单元相对，第一处理单元位于第一传送单元和第二传送单元之间。 第二传送单元具有第二臂机构，用于将晶片装入和从第一处理单元中的至少一个加载到第二处理单元中并从第二处理单元卸载。 界面部分设置在与曝光装置相邻的位置。 第一臂机构在第一传送单元和曝光设备之间传送晶片。
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公开(公告)号：US5364222A
公开(公告)日：1994-11-15
申请号：US14161
申请日：1993-02-05
申请人： Masami Akimoto , Kazutoshi Yoshioka , Naruaki Iida
发明人： Masami Akimoto , Kazutoshi Yoshioka , Naruaki Iida
IPC分类号： B65G1/00 , B65G1/07 , B65G49/07 , H01L21/677 , H01L21/683
CPC分类号： H01L21/67781 , H01L21/6838 , Y10S414/137 , Y10S414/141
摘要： An apparatus for coating and developing a resist on a wafer comprises a carrier station provided with a plurality of carriers for receiving wafers and transfer tables, a processing section having a plurality of processing units, and a transfer robot provided between the carrier station and the processing section. The robot comprises a plate-shaped arm for transferring wafers between the carriers and the transfer tables, and two horseshoe-shaped forks for transferring wafers between the processing units and transfer tables. The robot is movable along a transfer path so as to make the arm and forks face the carriers, processing units and transfer tables.
摘要翻译： 一种用于在晶片上涂覆和显影抗蚀剂的设备包括：载体站，设置有用于接收晶片和转印台的多个载体，具有多个处理单元的处理部分和设置在载体站和处理之间的传送机器人 部分。 机器人包括用于在载体和转印台之间传送晶片的板状臂，以及用于在处理单元和转印台之间转印晶片的两个马蹄形叉。 机器人可以沿传送路径移动，以使臂和叉面向载体，处理单元和传送台。
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公开(公告)号：US5460478A
公开(公告)日：1995-10-24
申请号：US403138
申请日：1995-03-13
申请人： Masami Akimoto , Kazutoshi Yoshioka , Naruaki Iida
发明人： Masami Akimoto , Kazutoshi Yoshioka , Naruaki Iida
IPC分类号： B65G1/00 , B65G1/07 , B65G49/07 , H01L21/677 , H01L21/683
CPC分类号： H01L21/67781 , H01L21/6838 , Y10S414/137 , Y10S414/141
摘要： An apparatus for coating and developing a resist on a wafer comprises a carrier station provided with a plurality of carriers for receiving wafers and transfer tables, a processing section having a plurality of processing units, and a transfer robot provided between the carrier station and the processing section. The robot comprises a plate-shaped arm for transferring wafers between the carriers and the transfer tables, and two horseshoe-shaped forks for transferring wafers between the processing units and transfer tables. The robot is movable along a transfer path so as to make the arm and forks face the carriers, processing units and transfer tables.
摘要翻译： 一种用于在晶片上涂覆和显影抗蚀剂的设备包括：载体站，设置有用于接收晶片和转印台的多个载体，具有多个处理单元的处理部分和设置在载体站和处理之间的传送机器人 部分。 机器人包括用于在载体和转印台之间传送晶片的板状臂，以及用于在处理单元和转印台之间转印晶片的两个马蹄形叉。 机器人可以沿传送路径移动，以使臂和叉面向载体，处理单元和传送台。
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