摘要:
Reverse bias voltage VM is applied to any one of self light emitting elements arranged on a light emitting panel 1 under detection mode. Current corresponding to weak current flowing to the element is supplied to a transistor Q3 by the operation of a current mirror circuit comprised of transistors Q1, Q2. The current mirror circuit is formed with the transistor Q3 as a control side current source transistor and transistors Q4 to Q7 as a controlled side current source transistor. The sizes of the controlled side current source transistors Q4 to Q7 are set to, for example, 1:2:4:8 with respect to the control side current source transistor Q3 so as to construct current amplifying means. Current value amplified by a current comparison type comparator 7 is compared with current value from a reference current source 8 and its output is latched by a latch circuit 9 and stored in a data register 10. If a weak current over a predetermined value flows when reverse bias voltage is applied to the self light emitting element, it is determined that a possibility that the self light emitting element turns into a light emission fault is high and notifying means is driven appropriately using data stored in the data register 10.
摘要:
In a detection mode, a reverse bias voltage VM is applied to any one of scan lines K1–Km arranged in a light emitting display panel 1. The electrical potentials generated at respective data lines A1–An of this time are supplied to potential determination means J1–Jn. In the potential determination means J1–Jn, the electrical potentials generated at the respective data lines A1–An are supplied to switching elements Q31–Q3n via transfer switches Q11–Q1n. When the electrical potentials are the threshold voltages of the switching elements Q31–Q3n or greater, the outputs of comparators CP1–CPn are inverted, and the states of this time are latched in latch circuits LC1–LCn to be stored in a data register 11. By data stored in the data register 11, it is determined whether or not a defect has occurred in pixels of the display panel, and the location thereof is also determined.
摘要:
Provided is a self light emitting display module by which defect can be reported to a user immediately in a case where defect occurs for example in a pixel of a light emitting display panel. Output terminal potentials of constant current sources I1-In which supply constant currents to respective EL elements E11-Enm arranged in a light emitting display panel 1 are drawn via inspection lines TL1-TLn and are selected by a select switch SW1. A selected electrical potential is supplied to first and second comparators CP1, CP2 whose comparison reference potentials differ, and their comparison results are latched by latch circuits LC1, LC2 respectively to be stored in a data register 6 provided as a memory means. A determination is made as to whether or not defect has occurred in a portion of a part including the respective EL elements and respective drivers 2,3 through data stored in the data register 6.
摘要:
Reverse bias voltage VM is applied to any one of self light emitting elements arranged on a light emitting panel 1 under detection mode. Current corresponding to weak current flowing to the element is supplied to a transistor Q3 by the operation of a current mirror circuit comprised of transistors Q1, Q2. The current mirror circuit is formed with the transistor Q3 as a control side current source transistor and transistors Q4 to Q7 as a controlled side current source transistor. The sizes of the controlled side current source transistors Q4 to Q7 are set to, for example, 1:2:4:8 with respect to the control side current source transistor Q3 so as to construct current amplifying means. Current value amplified by a current comparison type comparator 7 is compared with current value from a reference current source 8 and its output is latched by a latch circuit 9 and stored in a data register 10. If a weak current over a predetermined value flows when reverse bias voltage is applied to the self light emitting element, it is determined that a possibility that the self light emitting element turns into a light emission fault is high and notifying means is driven appropriately using data stored in the data register 10.
摘要:
In a detection mode, a reverse bias voltage VM is applied to any one of scan lines K1-Km arranged in a light emitting display panel 1. The electrical potentials generated at respective data lines A1-An of this time are supplied to potential determination means J1-Jn. In the potential determination means J1-Jn, the electrical potentials generated at the respective data lines A1-An are supplied to switching elements Q31-Q3n via transfer switches Q11-Q1n. When the electrical potentials are the threshold voltages of the switching elements Q31-Q3n or greater, the outputs of comparators CP1-CPn are inverted, and the states of this time are latched in latch circuits LC1-LCn to be stored in a data register 11. By data stored in the data register 11, it is determined whether or not a defect has occurred in pixels of the display panel, and the location thereof is also determined.
摘要:
A power element 22 is mounted on a board 21 outside an electric motor body 10 when viewed from an axial direction X. Heat produced by the power element 22 is conducted to a heat mass 32 formed outside the electric motor body 10 when similarly viewed from the axial direction X in a portion opposed to the power element 22, and radiated from a board-side heat radiating fin 33, and is also conducted through an uneven structure 42 which surrounds the power element 22 and radiated from a cover 40.
摘要:
A solid-state imaging device includes a photoelectric conversion layer, a MOS transistor circuit. The photoelectric conversion layer is formed over a semiconductor substrate. The MOS transistor circuit reads out a signal corresponding to charges generated in the photoelectric conversion layer and then collected, and that is formed in the semiconductor substrate, the charges having a given polarity. The MOS transistor circuit includes a charge accumulation portion, a reset transistor, and an output transistor. The charge accumulation portion is electrically connected with the photoelectric conversion layer. The reset transistor resets a potential of the charge accumulation portion to a reset potential. The output transistor outputs a signal corresponding to the potential of the charge accumulation portion. The reset transistor and the output transistor have carriers whose polarity is opposite to the given polarity. In the MOS transistor circuit, following formula (1) is satisfied: GND
摘要:
A printing method, comprising: determining whether or not a printer is capable of executing a printing command sent from a user terminal to the printer through a first communication channel; requesting a cloud computer through a second communication channel to provide an information needed to execute the printing command if the printer is not capable of executing the printing command; and executing the printing command after the information needed to execute the printing command is downloaded to the printer from the cloud computer.
摘要:
A solid state imaging device includes an array of pixels, each of the pixels includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; and a readout circuit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer have a difference of at least 1 eV, and the solid-state imaging device further includes a transparent partition wall between adjacent color filters of adjacent pixels of the array of pixels, the partition wall being made from a transparent material having a lower refractive index than a material forming the color filters.
摘要:
According to the embodiment of the invention a communication apparatus including: a first communication module radio communicating based on a first radio access technology; a second communication module radio communicating based on a second radio access technology; a first information storing module storing radio access technology information indicating at least one of the first and second radio access technologies to be used in a radio communication of the communication apparatus; a chip storing module configured to store an information chip that stores company information with respect to a company providing a communication service; a search module configured to read out the company information from the information chip to perform a radio wave search according to one of the first and second radio access technologies based on the company information; and a setting module configured to set the radio access technology information in the first information storing module based on the result of the radio wave searching