摘要:
An object of the present invention is to provide a plasma display panel and a manufacturing method thereof that can prevent a dielectric layer and a protective layer from being deteriorated and give excellent image display performance, by performing a sealing process effectively. The object can be realized by a plasma display panel including a front panel 10 and a back panel 11 arranged in opposing to each other at a certain gap, the front panel and the back panel being sealed by a sealing layer 17 that is provided on entire peripheral portions of main surfaces of the front panel and the back panel, and the sealing layer is composed of at least one material selected from the group consisting of an organic resin material, an inorganic material, and a metal material (more specifically, a silica material as a main component and an epoxy resin material).
摘要:
A PDP (101) with a reduced discharge inception voltage and discharge sustaining voltage for improving luminous efficiency has at least a pair of substrates (110 and 111) that are disposed in opposition to sandwich a discharge space therebetween. At least a portion of at least one of the substrates has two or more display electrode pairs (104) that include narrow bus electrodes (159 and 169), a dielectric layer (107) formed so as to cover the display electrode pairs (104), and a protective layer (108) formed so as to cover the dielectric layer (107). The dielectric layer (107) has a dense film structure with a dielectric breakdown voltage of 1.0×106 [V/cm] to 1.0×107 [V/cm].
摘要:
A PDP (101) with a reduced discharge inception voltage and discharge sustaining voltage for improving luminous efficiency has at least a pair of substrates (110 and 111) that are disposed in opposition to sandwich a discharge space therebetween. At least a portion of at least one of the substrates has two or more display electrode pairs (104) that include narrow bus electrodes (159 and 169), a dielectric layer (107) formed so as to cover the display electrode pairs (104), and a protective layer (108) formed so as to cover the dielectric layer (107). The dielectric layer (107) has a dense film structure with a dielectric breakdown voltage of 1.0×106 [V/cm] to 1.0×107 [V/cm].
摘要:
A PDP can be driven at low voltage while having a charge retention property in a protection layer, and has favorable image display properties. Additionally, the PDP prevents the occurrence of discharge delay and realizes high-quality image display by performing favorable high-speed driving in a high definition PDP. To achieve this, a surface layer (8) is formed to a film thickness of 1 μm in an oxygen atmosphere having an oxygen partial pressure of 0.025 Pa or more, the surface layer (8) is provided on a face of a dielectric layer (7) on a discharge space side. Furthermore, MgO particles (16) are dispersed on a surface of the surface layer (8). The surface layer (8) has the effects of protecting the dielectric layer (7) from ion bombardment during discharge, reducing the firing voltage, and preventing excessive electron loss. Also, the MgO particles (16) have a high initial electron emission property.
摘要:
A PDP can be driven at low voltage while having a charge retention property in a protection layer, and has favorable image display properties. Additionally, the PDP prevents the occurrence of discharge delay and realizes high-quality image display by performing favorable high-speed driving in a high definition PDP. To achieve this, a surface layer (8) is formed to a film thickness of 1 μm in an oxygen atmosphere having an oxygen partial pressure of 0.025 Pa or more, the surface layer (8) is provided on a face of a dielectric layer (7) on a discharge space side. Furthermore, MgO particles (16) are dispersed on a surface of the surface layer (8). The surface layer (8) has the effects of protecting the dielectric layer (7) from ion bombardment during discharge, reducing the firing voltage, and preventing excessive electron loss. Also, the MgO particles (16) have a high initial electron emission property.
摘要:
In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.
摘要:
In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203 is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.
摘要:
A plasma display panel in which a first substrate having a protective layer formed thereon opposes a second substrate across a discharge space, with the substrates being sealed around a perimeter thereof. At a surface of the protective layer, first and second materials of different electron emission properties are exposed to the discharge space, with at least one of the materials existing in a dispersed state. The first and second materials may be first and second crystals, and the second crystal may be dispersed throughout the first crystal.
摘要:
Provided is a gas discharge display panel that exhibits a favorable display performance by maintaining a wall charge retaining power, controlling discharge delay within a range adequate for optimal image display, and reducing the discharge starting voltage at comparatively low cost. Also provided is a PDP that exhibits more reliability with enhanced display quality by further improving the secondary electron emission factor γ compared to conventional cases and lowering the discharge starting voltage to widen the driving margin. Further provided is a manufacturing method of a gas discharge display panel, by which the manufacturing cost lowers by reduction of the exhaustion time in the sealing exhaustion process, and by which the driving circuit cost is reduced. In a gas discharge display panel of the present invention, a protective layer (15) has a first protective film (151) and a second protective film (152), the second protective film (152) is formed on at least part of a surface of the first protective film (151), and the first protective film (151) has a larger impurity content than the second protective film (152).
摘要:
A measuring device, a measuring method, and an evaluating device for easily and accurately obtaining information suitable to evaluate, for example, the discharge characteristic of an insulating film such as an MgO protective layer of a plasma display are provided. An MgO film surface, a sample to be measured, is irradiated with electrons or ions emitted from an electron gun (130) or an ion gun (140). The energy distribution of the secondary electrons emitted from the sample is measured by an electron spectrograph (150), and the spectrum data on the measured secondary electrons is supplied to an analyzing device (200). The analyzing device (200) analyzes the spectrum data and determines information (evaluation values) to evaluate the properties of the sample to be measured.