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    Magnetic storage device
    1.
    发明授权
    Magnetic storage device 有权
    磁存储装置

    公开(公告)号：US09203015B2

    公开(公告)日：2015-12-01

    申请号：US14015966

    申请日：2013-08-30

    申请人： Hisanori Aikawa ,  Masayoshi Iwayama ,  Akiyuki Murayama ,  Sumio Ikegawa

    发明人： Hisanori Aikawa ,  Masayoshi Iwayama ,  Akiyuki Murayama ,  Sumio Ikegawa

    IPC分类号： H01L21/02 ,  H01L43/12 ,  H01L43/08

    CPC分类号： H01L43/12 ,  H01L43/08

    摘要： According to one embodiment, a magnetic storage device includes an insulating region, a lower electrode including a first portion formed in a hole provided in the insulating region and a second portion protruded from the insulating region, a spacer insulating film formed on a side surface of at least the second portion of the lower electrode, a magnetic tunneling junction portion formed on a top surface of the lower electrode, and an upper electrode formed on the magnetic tunneling junction portion.

    摘要翻译： 根据一个实施例，磁存储装置包括绝缘区域，下电极，包括形成在设置在绝缘区域中的孔中的第一部分和从绝缘区域突出的第二部分;隔离绝缘膜，形成在绝缘区域的侧表面上; 至少下电极的第二部分，形成在下电极的顶表面上的磁隧道连接部分和形成在磁隧道连接部分上的上电极。

    Manufacturing method of magnetic memory device
    2.
    发明授权
    Manufacturing method of magnetic memory device 有权
    磁存储器件的制造方法

    公开(公告)号：US09449892B2

    公开(公告)日：2016-09-20

    申请号：US14636984

    申请日：2015-03-03

    申请人： Hisanori Aikawa ,  Masayoshi Iwayama ,  Akiyuki Murayama

    发明人： Hisanori Aikawa ,  Masayoshi Iwayama ,  Akiyuki Murayama

    IPC分类号： H01L21/66 ,  H01L43/12 ,  H01L27/22 ,  H01L29/82 ,  H01L43/08

    CPC分类号： H01L22/20 ,  H01L22/14 ,  H01L27/224 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

    摘要： According to one embodiment, a manufacturing method of a magnetic memory device, includes obtaining first and second magnetic fields for each of magnetoresistive effect elements, defining a group of the elements, for the first and second magnetic fields of the elements in the group, a highest first magnetic field being lower than a lowest second magnetic field, and a difference between the highest first magnetic field and the lowest second magnetic field being greater than a predetermined difference, determining a maximum applied magnetic field higher than the highest first magnetic field and lower than the lowest second magnetic field, and obtaining magnetic characteristics for each of the elements in the group by applying a magnetic field decreasing from the maximum applied magnetic field after the magnetic field is increased up to the maximum applied magnetic field.

    摘要翻译： 根据一个实施例，一种磁存储器件的制造方法包括为每个磁阻效应元件获得用于组中元件的第一和第二磁场的一组元件的第一和第二磁场， 最高的第一磁场低于最低的第二磁场，并且最高的第一磁场和最低的第二磁场之间的差大于预定的差，确定高于最高的第一磁场的最大施加的磁场和较低的第一磁场 并且通过在磁场增加到最大施加的磁场之后施加从最大施加的磁场减小的磁场来获得组中的每个元件的磁特性。

    Magnetoresistive effect device and magnetic memory
    3.
    发明授权
    Magnetoresistive effect device and magnetic memory 有权
    磁阻效应器和磁记忆体

    公开(公告)号：US08223533B2

    公开(公告)日：2012-07-17

    申请号：US12556883

    申请日：2009-09-10

    申请人： Jyunichi Ozeki ,  Naoharu Shimomura ,  Sumio Ikegawa ,  Tadashi Kai ,  Masahiko Nakayama ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Eiji Kitagawa ,  Masatoshi Yoshikawa

    发明人： Jyunichi Ozeki ,  Naoharu Shimomura ,  Sumio Ikegawa ,  Tadashi Kai ,  Masahiko Nakayama ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Eiji Kitagawa ,  Masatoshi Yoshikawa

    IPC分类号： G11C11/00

    CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3277 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

    摘要： A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.

    摘要翻译： 磁存储器包括磁阻效应器件，包括：在垂直于其膜平面的方向上具有磁各向异性的第一铁磁层; 设置在第一铁磁层上的第一非磁性层; 设置在第一非磁性层上的第一参考层在垂直于其膜平面的方向上具有磁各向异性，具有与第一铁磁层的磁化方向反平行的磁化，并且具有1 / 5.2〜 在第一铁磁层的垂直于膜平面的方向上的膜厚度的1/15倍; 设置在第一参考层上的第二非磁性层; 并且设置在第二非磁性层上的存储层在垂直于其膜平面的方向上具有磁各向异性，并且由于使电流流向磁阻效应器而引起的由自旋极化电子变化的磁化方向。

    MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
    4.
    发明申请
    MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY 有权
    磁记忆元件和磁记忆

    公开(公告)号：US20130099337A1

    公开(公告)日：2013-04-25

    申请号：US13604386

    申请日：2012-09-05

    申请人： Masahiko Nakayama ,  Hisanori Aikawa ,  Masaru Toko ,  Hiroaki Yoda ,  Tatsuya Kishi ,  Sumio Ikegawa

    发明人： Masahiko Nakayama ,  Hisanori Aikawa ,  Masaru Toko ,  Hiroaki Yoda ,  Tatsuya Kishi ,  Sumio Ikegawa

    IPC分类号： H01L29/82

    CPC分类号： H01L27/228 ,  H01L43/08

    摘要： According to one embodiment, a magnetic memory element includes a memory layer, a first nonmagnetic layer, a reference layer, a second nonmagnetic layer, and an adjustment layer which are stacked. The adjustment layer is configured to reduce a leakage magnetic field from the reference layer. The adjustment layer is formed by stacking an interface layer provided on the second nonmagnetic layer, and a magnetic layer having magnetic anisotropy perpendicular to a film surface. Saturation magnetization of the interface layer is larger than that of the magnetic layer.

    摘要翻译： 根据一个实施例，磁存储元件包括堆叠的存储器层，第一非磁性层，参考层，第二非磁性层和调整层。 调整层被配置为减少来自参考层的泄漏磁场。 调整层通过层叠设置在第二非磁性层上的界面层和垂直于膜表面的具有磁各向异性的磁性层而形成。 界面层的饱和磁化强度大于磁性层的饱和磁化强度。

    Magnetoresistive element and magnetic memory
    6.
    发明授权
    Magnetoresistive element and magnetic memory 有权
    磁阻元件和磁记忆体

    公开(公告)号：US07894246B2

    公开(公告)日：2011-02-22

    申请号：US12014522

    申请日：2008-01-15

    申请人： Tomomasa Ueda ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Naoharu Shimomura ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Keiji Hosotani ,  Makoto Nagamine

    发明人： Tomomasa Ueda ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Naoharu Shimomura ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Keiji Hosotani ,  Makoto Nagamine

    IPC分类号： G11C11/00

    CPC分类号： G11C11/15 ,  H01L27/228 ,  H01L43/08

    摘要： A magnetoresistive element includes: a magnetization free layer having a first plane and a second plane located on the opposite side from the first plane, and having a variable magnetization direction; a magnetization pinned layer provided on the first plane side of the magnetization free layer, and having a pinned magnetization direction; a first tunnel barrier layer provided between the magnetization free layer and the magnetization pinned layer; a second tunnel barrier layer provided on the second plane of the magnetization free layer; and a non-magnetic layer provided on a plane on the opposite side of the second tunnel barrier layer from the magnetization free layer. The magnetization direction of the magnetization free layer is variable by applying current between the magnetization pinned layer and the non-magnetic layer, and a resistance ratio between the first tunnel barrier layer and the second tunnel barrier layer is in a range of 1:0.25 to 1:4.

    摘要翻译： 磁阻元件包括：无磁化层，其具有第一平面和位于与第一平面相反的一侧的第二平面，并且具有可变的磁化方向; 磁化固定层，设置在所述磁化自由层的所述第一平面侧上，并且具有钉扎磁化方向; 设置在所述磁化自由层和所述磁化固定层之间的第一隧道势垒层; 设置在无磁化层的第二平面上的第二隧道势垒层; 以及设置在与磁化自由层相反的第二隧道势垒层的相对侧上的平面上的非磁性层。 磁化自由层的磁化方向通过在磁化被钉扎层和非磁性层之间施加电流而变化，并且第一隧道势垒层和第二隧道势垒层之间的电阻比在1:0.25至 1：4。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    7.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
    磁性元件和磁记忆

    公开(公告)号：US20100315864A1

    公开(公告)日：2010-12-16

    申请号：US12851275

    申请日：2010-08-05

    申请人： Tomomasa UEDA ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Naoharu Shimomura ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Keiji Hosotani ,  Makoto Nagamine

    发明人： Tomomasa UEDA ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Naoharu Shimomura ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Keiji Hosotani ,  Makoto Nagamine

    IPC分类号： G11C11/00 ,  H01L21/02 ,  H01L29/82

    CPC分类号： G11C11/15 ,  H01L27/228 ,  H01L43/08

    摘要： A magnetoresistive element includes: a magnetization free layer having a first plane and a second plane located on the opposite side from the first plane, and having a variable magnetization direction; a magnetization pinned layer provided on the first plane side of the magnetization free layer, and having a pinned magnetization direction; a first tunnel barrier layer provided between the magnetization free layer and the magnetization pinned layer; a second tunnel barrier layer provided on the second plane of the magnetization free layer; and a non-magnetic layer provided on a plane on the opposite side of the second tunnel barrier layer from the magnetization free layer. The magnetization direction of the magnetization free layer is variable by applying current between the magnetization pinned layer and the non-magnetic layer, and a resistance ratio between the first tunnel barrier layer and the second tunnel barrier layer is in a range of 1:0.25 to 1:4.

    摘要翻译： 磁阻元件包括：无磁化层，其具有第一平面和位于与第一平面相反的一侧的第二平面，并且具有可变的磁化方向; 磁化固定层，设置在所述磁化自由层的所述第一平面侧上，并且具有钉扎磁化方向; 设置在所述磁化自由层和所述磁化固定层之间的第一隧道势垒层; 设置在无磁化层的第二平面上的第二隧道势垒层; 以及设置在与磁化自由层相反的第二隧道势垒层的相对侧上的平面上的非磁性层。 磁化自由层的磁化方向通过在磁化被钉扎层和非磁性层之间施加电流而变化，并且第一隧道势垒层和第二隧道势垒层之间的电阻比在1:0.25至 1：4。

    Magnetoresistive element and producing method thereof
    8.
    发明授权
    Magnetoresistive element and producing method thereof 有权
    磁阻元件及其制造方法

    公开(公告)号：US08878321B2

    公开(公告)日：2014-11-04

    申请号：US13618410

    申请日：2012-09-14

    申请人： Hisanori Aikawa ,  Hiroaki Yoda ,  Masahiko Nakayama ,  Tatsuya Kishi ,  Sumio Ikegawa

    发明人： Hisanori Aikawa ,  Hiroaki Yoda ,  Masahiko Nakayama ,  Tatsuya Kishi ,  Sumio Ikegawa

    IPC分类号： H01L29/82 ,  H01L21/8246 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22

    CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08

    摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer, in which a magnetization direction is variable and is perpendicular to a film surface, a tunnel barrier layer that is formed on the first magnetic layer, and a second magnetic layer that is formed on the tunnel barrier layer, a magnetization direction of the second magnetic layer being variable and being perpendicular to the film surface. The second magnetic layer comprises a body layer that constitutes an origin of perpendicular magnetic anisotropy, and an interface layer that is formed between the body layer and the tunnel barrier layer. The interface layer has a permeability higher than that of the body layer and a planar size larger than that of the body layer.

    摘要翻译： 根据一个实施例，磁阻元件包括其中磁化方向可变并且垂直于膜表面的第一磁性层，形成在第一磁性层上的隧道势垒层和形成的第二磁性层 在隧道势垒层上，第二磁性层的磁化方向是可变的并垂直于膜表面。 第二磁性层包括构成垂直磁各向异性的原点的主体层以及形成在主体层与隧道势垒层之间的界面层。 界面层的透过率比体层高，平面尺寸比体层大。