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    Semiconducting ceramics containing vanadium oxide
    3.
    发明授权
    Semiconducting ceramics containing vanadium oxide 失效
    含有氧化钒的半导体陶瓷

    公开(公告)号：US4022716A

    公开(公告)日：1977-05-10

    申请号：US658720

    申请日：1976-02-17

    申请人： Hisayoshi Ueoka ,  Masatada Yodogawa

    发明人： Hisayoshi Ueoka ,  Masatada Yodogawa

    IPC分类号： C04B35/468 ,  H01B1/08 ,  H01C7/02

    CPC分类号： C04B35/4682 ,  H01B1/08 ,  H01C7/025

    摘要： Semiconducting ceramics are produced by firing a semiconducting composition of the barium titanate type containing vanadium oxide in the amount of 0.001 to 0.5 wt%. A change in the specific resistance over the range of the temperature at which the positive temperature coefficient characteristic of resistivity (PTCR) is exhibited can be increased by as much as 10.sup.5 times and the specific resistance value at room temperature can be controlled at a desired value. By further adding silicon dioxide to the above composition in the amount of 0.05 to 1.5 wt% the above effects can be enhanced, especially the specific resistance at ambient temperature.

    摘要翻译： 通过以0.001-0.5wt％的量焙烧含有钛酸钡的氧化钒的半导体组合物制备半导体陶瓷。 在电阻率（PTCR）的正温度系数特性的温度范围内的电阻率的变化可以增加多达105次，并且可以将室温下的电阻率控制在期望值 。 通过进一步向上述组合物中添加0.05〜1.5重量％的二氧化硅，可以提高上述效果，特别是环境温度下的电阻率。

    High dielectric constant type ceramic composition
    6.
    发明授权
    High dielectric constant type ceramic composition 失效
    高介电常数陶瓷组合物

    公开(公告)号：US4235635A

    公开(公告)日：1980-11-25

    申请号：US61015

    申请日：1979-07-26

    申请人： Osamu Iizawa ,  Shinobu Fujiwara ,  Hisayoshi Ueoka ,  Kiyoshi Furukawa ,  Nobuaki Kikuchi ,  Hitoshi Tanaka

    发明人： Osamu Iizawa ,  Shinobu Fujiwara ,  Hisayoshi Ueoka ,  Kiyoshi Furukawa ,  Nobuaki Kikuchi ,  Hitoshi Tanaka

    IPC分类号： C04B35/497 ,  H01B3/12 ,  C04B35/26

    CPC分类号： H01B3/12 ,  C04B35/497

    摘要： A novel ceramic composition exhibiting a solid solution structure of Pb(Fe.sub.2/3 W.sub.1/3)O.sub.3 --Pb(ZrO.sub.3), can be sintered at a low sintering temperature; have a high insulation resistance; have a relatively high dielectric constant in the high dielectric type ceramic dielectrics; have a low dependence of dielectric constant upon temperature, and; have a low dielectric loss.A particular amount of the additives, i.e., MnO, Pb(Mn.sub.1/3 Nb.sub.2/3)O.sub.3, Pb(Mn.sub.1/2 W.sub.1/2)O.sub.3, Pb(Mn.sub.2/3 W.sub.1/3)O.sub.3, Pb(Mn.sub.1/3 Ta.sub.2/3)O.sub.3, Cr.sub.2 O.sub.3 and CeO.sub.2, is added into the composition mentioned above.

    摘要翻译： 表现出Pb（Fe2 / 3W1 / 3）O3-Pb（ZrO3）固溶体结构的新型陶瓷组合物可以在低烧结温度下烧结; 具有很高的绝缘电阻; 在高介电常数陶瓷电介质中具有较高的介电常数; 介电常数对温度的依赖性低， 具有低介电损耗。 MnO，Pb（Mn1 / 3Nb2 / 3）O3，Pb（Mn1 / 2W1 / 2）O3，Pb（Mn2 / 3W1 / 3）O3，Pb（Mn1 / 3Ta2 / 3）O3 ，Cr 2 O 3和CeO 2加入到上述组合物中。