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    Integrated Circuit Device
    1.
    发明公开
    Integrated Circuit Device 审中-公开

    公开(公告)号：US20230266405A1

    公开(公告)日：2023-08-24

    申请号：US18011461

    申请日：2021-02-05

    Applicant: Hitachi Astemo, Ltd.

    Inventor： Yasuo SHIMA ,  Keishi KOMORIYAMA ,  Yoichiro KOBAYASHI

    IPC: G01R31/54

    CPC classification number: G01R31/54

    Abstract: Poor opening is detected with certainty and reliability with respect to a ground line of an integrated circuit device regardless of the connection state of a load and the operating state of a drive circuit. In an integrated circuit device 10, a drive circuit 30 switches between conduction and interruption of a load current using switch elements 40 and 45. The ground line 31 is grounded via the GND terminal 32 to the common ground provided outside the integrated circuit device 10 and is connected to the drive circuit 30. The ground line 21 is grounded to the common ground via the GND terminal 22 and is connected to the control circuit 20. The diagnostic current supply circuit 90 supplies a predetermined diagnostic current to the ground line 31. The rectifying elements 61 and 62 are connected between the ground line 21 and the ground line 31. The diagnostic circuit 70 measures the potential difference between the ground line 31 and the ground line 21 and compares the potential difference with the predetermined comparison voltage 73 to diagnose the grounding state of the ground line 31.

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220359694A1

    公开(公告)日：2022-11-10

    申请号：US17618763

    申请日：2020-06-09

    Applicant: HITACHI ASTEMO, LTD.

    Inventor： Shinichirou WADA ,  Tomohiko YANO ,  Yoichiro KOBAYASHI

    IPC: H01L29/423 ,  H01L23/00

    Abstract: There is a problem that an area of a principal current cell is reduced by an area of a bonding pad wiring layer for a sub-cell. A source electrode 9b of a current detection cell 22 is electrically connected to a bonding pad wiring layer 12 formed on an interlayer insulating film 10 via a wiring layer contact 11. The bonding pad wiring layer 12 is formed with respect to a source electrode 9a of a principal current cell 21 so as to cover a part of the source electrode 9a via the interlayer insulating film 10. As a result, the source electrode 9b is miniaturized, and a size of the source electrode 9b is made substantially equal to a size of the current detection cell 22. Therefore, the current detection cell 22 and the principal current cell 21 are disposed close to each other.

    POWER CONVERSION DEVICE
    3.
    发明申请
    POWER CONVERSION DEVICE 有权

    公开(公告)号：US20220321029A1

    公开(公告)日：2022-10-06

    申请号：US17629852

    申请日：2020-07-13

    Applicant: Hitachi Astemo, Ltd.

    Inventor： Tomohiko YANO ,  Shinichirou WADA ,  Yoichiro KOBAYASHI

    IPC: H02M7/5387 ,  H02M1/096 ,  H02M1/32 ,  H03F3/45

    Abstract: Provided is a novel power conversion device that enables estimation of a temperature of a power device without using a temperature sensing diode and can accurately estimate a temperature and a current of a current sensing element that observes a main current. A measurement voltage (Vref) is applied between source terminals (31s and 49s) of a main control element 31 and a current sensing element 49 in a state in which the main control element 31 and the current sensing element 49 are turned off, and a temperature of a power device 30 is estimated from a current (Ib) flowing between the source terminals (31s and 49s) of the main control element 31 and the current sensing element 49 at the time of the application by using the fact that a resistance value of a semiconductor substrate between the source terminals of the main control element 31 and the current sensing element 49 has temperature dependency.

    POWER CONVERSION DEVICE
    5.
    发明公开
    POWER CONVERSION DEVICE 审中-公开

    公开(公告)号：US20230223867A1

    公开(公告)日：2023-07-13

    申请号：US17927217

    申请日：2021-02-05

    Applicant: HITACHI ASTEMO, LTD.

    Inventor： Shinichirou WADA ,  Tomohiko YANO ,  Yoichiro KOBAYASHI

    IPC: H02M7/5387 ,  H02M1/088 ,  H02M1/00

    CPC classification number: H02M7/53871 ,  H02M1/0009 ,  H02M1/088 ,  H02P27/08

    Abstract: Provided is a power conversion device capable of observing a chip temperature with high accuracy without increasing a cost of the power conversion device mounted with a current sense element for observing a main current of a power device. A main control MOSFET 11, a current MOSFET 12, and a diode 13 connected to a source electrode 8 of the main control MOSFET 11 and a source electrode 9 of the current MOSFET 12 are mounted in a chip of a power device, a temperature measurement circuit 3 is connected to the source electrode 9 of the current MOSFET 12, and when the main control MOSFET 11 is in an off state, a forward current (If) is caused to flow through the diode 13, and an anode potential is observed to measure the chip temperature.

    Load Drive Device and Transmission Drive System
    6.
    发明申请
    Load Drive Device and Transmission Drive System 有权

    公开(公告)号：US20220014183A1

    公开(公告)日：2022-01-13

    申请号：US17289320

    申请日：2019-09-26

    Applicant: Hitachi Astemo, Ltd.

    Inventor： Keishi KOMORIYAMA ,  Yoichiro KOBAYASHI

    IPC: H03K17/082 ,  G01R1/20 ,  G01R19/00

    Abstract: To prevent deterioration of current detection accuracy due to a difference in deterioration between a main MOS and a sense MOS. The load drive device includes a main MOS (101) for supplying a load current to a load, a sense MOS (102) to be used for detection of the load current, and an equalizer circuit (110) and a switch (120) which are provided in parallel between the source terminal of the main MOS and the source terminal of the sense MOS. The drain terminal of the main MOS and the drain terminal of the sense MOS have a common connection, and when a current is detected, the terminal voltage of the main MOS and the terminal voltage of the sense MOS are equalized by the equalizer circuit, and the switch is opened. When a current is not detected, the equalizer circuit is stopped and the switch short-circuits the source terminal of the main MOS and the source terminal of the sense MOS.

    POWER CONVERSION DEVICE AND METHOD OF CONTROLLING POWER CONVERSION DEVICE
    9.
    发明公开
    POWER CONVERSION DEVICE AND METHOD OF CONTROLLING POWER CONVERSION DEVICE 审中-公开

    公开(公告)号：US20240006975A1

    公开(公告)日：2024-01-04

    申请号：US18252562

    申请日：2021-09-10

    Applicant: Hitachi Astemo, Ltd.

    Inventor： Katsumi IKEGAYA ,  Yoichiro KOBAYASHI

    IPC: H02M1/00 ,  H03K17/082 ,  H02M7/537 ,  B60R16/03

    CPC classification number: H02M1/0009 ,  H03K17/0826 ,  H02M7/537 ,  B60R16/03 ,  H03K2217/0027

    Abstract: Provided is a power conversion device on which an IGBT power module that includes a main IGBT and a current sense IGBT in the same semiconductor chip is mounted, wherein the power conversion device is a high-performance and highly reliable power conversion device capable of accurately estimating a main current flowing through the main IGBT using a sense current in an entire operation region of the power conversion device. A power conversion device includes: a first IGBT through which a main current flows; a second IGBT which is disposed on the same semiconductor substrate as the first IGBT and through which a sense current flows; and a measurement device which calculates the main current based on the sense current, wherein the measurement device selects a method of calculating the main current corresponding to a current value of the sense current.

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