PLASMA PROCESSING APPARATUS AND ANALYSIS METHOD FOR ANALYZING PLASMA PROCESSING DATA

    公开(公告)号:US20200328067A1

    公开(公告)日:2020-10-15

    申请号:US16910533

    申请日:2020-06-24

    Abstract: According to the present invention, a plasma processing apparatus includes an analysis unit that obtains wavelengths of the light correlated with a plasma processing result, selects, from the obtained wavelengths, a wavelength having a first factor that represents a deviation in an intensity distribution of the light and is larger than a first predetermined value, and predicts the plasma processing result using the selected wavelength, or an analysis unit that obtains values computed using each of light intensities of a plurality of wavelengths and correlated with the plasma processing result, selects, from the obtained values, a value having a second factor that represents a deviation in a distribution of the obtained values and is larger than a second predetermined value, and predicts the plasma processing result using the selected value.

    APPARATUS DIAGNOSTIC APPARATUS, SEMICONDUCTOR MANUFACTURING APPARATUS SYSTEM, AND SEMICONDUCTOR APPARATUS MANUFACTURING SYSTEM

    公开(公告)号:US20240339308A1

    公开(公告)日:2024-10-10

    申请号:US18027200

    申请日:2022-01-25

    CPC classification number: H01J37/32926 H01J37/32935 H01L21/67253

    Abstract: An apparatus diagnostic apparatus that performs a computation process using data acquired from a semiconductor apparatus manufacturing apparatus having a reference chamber to create reference chamber feature quantity map data by mapping a feature quantity onto a graph having axes representing a plurality of parameters. The apparatus diagnostic apparatus also performs a computation process using data acquired from a semiconductor apparatus manufacturing apparatus having a calibration-target chamber to create calibration-target chamber feature quantity map data by mapping a feature quantity onto a graph having axes representing a plurality of parameters. Based on patterns observed in the reference chamber feature quantity map data and the calibration-target chamber feature quantity map data, the apparatus diagnostic apparatus identifies a performance difference between different chambers, a performance difference resulting from a temporal change of a single chamber, or a performance difference resulting from component replacement or component cleaning of a single chamber.

    PLASMA PROCESSING APPARATUS, DATA ANALYSIS APPARATUS, AND SEMICONDUCTOR DEVICE MANUFACTURING SYSTEM

    公开(公告)号:US20240203712A1

    公开(公告)日:2024-06-20

    申请号:US17909512

    申请日:2021-07-14

    Abstract: Provided is a plasma processing apparatus, a data analysis apparatus, and a semiconductor device manufacturing system, capable of assigning an appropriate chemical element or molecule on the basis of the features of a peak shape and capable of performing wavelength identification with high accuracy. The plasma processing apparatus includes: a processing chamber in which a sample is plasma-processed; a radio-frequency power supply that supplies radio-frequency power to generate plasmas; and a sample table on which the sample is placed, the plasma processing apparatus further including an analysis unit that identifies chemical elements or molecules in monitored plasmas on the basis of a match degree between a first spectral waveform and a second spectral waveform, the match degree being obtained by comparing the first spectral waveform with the second spectral waveform, the first and second spectral waveforms being spectral waveforms of the emission of the monitored plasmas, wherein the second spectral waveform is a spectral waveform multiplied by a weight coefficient corresponding to the chemical element or the molecule.

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