APPARATUS DIAGNOSTIC APPARATUS, SEMICONDUCTOR MANUFACTURING APPARATUS SYSTEM, AND SEMICONDUCTOR APPARATUS MANUFACTURING SYSTEM

    公开(公告)号:US20240339308A1

    公开(公告)日:2024-10-10

    申请号:US18027200

    申请日:2022-01-25

    CPC classification number: H01J37/32926 H01J37/32935 H01L21/67253

    Abstract: An apparatus diagnostic apparatus that performs a computation process using data acquired from a semiconductor apparatus manufacturing apparatus having a reference chamber to create reference chamber feature quantity map data by mapping a feature quantity onto a graph having axes representing a plurality of parameters. The apparatus diagnostic apparatus also performs a computation process using data acquired from a semiconductor apparatus manufacturing apparatus having a calibration-target chamber to create calibration-target chamber feature quantity map data by mapping a feature quantity onto a graph having axes representing a plurality of parameters. Based on patterns observed in the reference chamber feature quantity map data and the calibration-target chamber feature quantity map data, the apparatus diagnostic apparatus identifies a performance difference between different chambers, a performance difference resulting from a temporal change of a single chamber, or a performance difference resulting from component replacement or component cleaning of a single chamber.

    DIAGNOSIS DEVICE, DIAGNOSIS METHOD, PLASMA PROCESSING APPARATUS, AND SEMICONDUCTOR DEVICE MANUFACTURING SYSTEM

    公开(公告)号:US20240213003A1

    公开(公告)日:2024-06-27

    申请号:US17908306

    申请日:2021-07-13

    CPC classification number: H01J37/32963 G01M99/005

    Abstract: A diagnosis device that uses information from state sensors provided in a plasma processing apparatus for plasma processing a specimen to diagnose deterioration states of components configuring the plasma processing apparatus includes an execution unit that computes and calculates deterioration degree of each of the components configuring the plasma processing apparatus on the basis of the information from the state sensors, and an analysis unit that sets a computation condition for computing and calculating the deterioration degree by the execution unit on the basis of the information from the state sensors and calculates a maintenance period of the plasma processing apparatus on the basis of the information of the deterioration degree of each of the components configuring the plasma processing apparatus computed and calculated by the execution unit, and makes it possible to decide deterioration degree computation condition having high robustness for each of the components.

    PLASMA PROCESSING APPARATUS
    3.
    发明申请

    公开(公告)号:US20230110096A1

    公开(公告)日:2023-04-13

    申请号:US17974727

    申请日:2022-10-27

    Abstract: To reduce the damage caused due to the degradation of sealing material without complicating the structure of the vacuum sealing material of the vacuum container and to perform cleaning without affecting the lifetime of the sealing material in a plasma processing apparatus, this invention provides a plasma processing apparatus in which a window portion and a processing chamber are coupled to each other with an elastomeric sealing material sandwiched therebetween, and a sealing material is arranged at a position where a ratio of a distance from the inner wall surface of a processing chamber in an interstice portion to the sealing material with respect to the interstice between the window portion and the processing chamber having the sealing material sandwiched there between is 3 or more, in a vacuum state with the air exhausted from the processing chamber by the vacuum exhaust unit.

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