公开(公告)号：US20220115239A1

公开(公告)日：2022-04-14

申请号：US17276982

申请日：2020-04-10

Applicant: Hitachi High-Tech Corporation

Inventor： Takashi Hattori ,  Yu Zhao ,  Hiroyuki Kobayashi ,  Hiroto Otake

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/67

Abstract: Provided is an etching method for etching a silicon oxide film with a high accuracy at a high selection ratio with respect to a silicon nitride film, the etching method of etching a film structure, in which an end portion of a film layer in which the silicon oxide film and the silicon nitride film formed in advance on a wafer disposed in a processing chamber are alternately stacked in a vertical direction forms a side wall of a groove or a hole, by supplying processing gas into the processing chamber includes a step of supplying hydrogen fluoride and alcohol vapor into the processing chamber, maintaining the wafer at a temperature of −20° C. or lower, preferably −20° C. to −60° C., and etching the silicon oxide film from the end portion in a lateral direction.

公开(公告)号：US11295960B1

公开(公告)日：2022-04-05

申请号：US17195913

申请日：2021-03-09

Applicant: Hitachi High-Tech Corporation

Inventor： Takashi Hattori ,  Masaki Yamada ,  Michael Walker ,  Catherine King ,  Hiroto Otake

IPC: H01L21/311

Abstract: A method of etching a silicon oxide film with high precision at high selectivity as compared with a silicon nitride film while establishing both of a higher etching rate of the silicon oxide film and a lower etching rate of the silicon nitride film is provided. An etching method according to the present invention is directed to a dry etching method for etching a film structure without using plasma in which an end of a film layer having a silicon oxide film vertically sandwiched between silicon nitride films and laminated and formed in advance on a wafer disposed in a processing chamber forms a side wall of a groove or a hole while a processing gas is supplied into the processing chamber, the method including the steps of: supplying a hydrogen fluoride gas; cooling the wafer to a low temperature of −30° C. or lower, preferably, to −30 to −60° C.; and etching the silicon oxide film laterally from the end.

公开(公告)号：US11901192B2

公开(公告)日：2024-02-13

申请号：US17439756

申请日：2020-06-30

Applicant: Hitachi High-Tech Corporation

Inventor： Hiroto Otake ,  Takashi Hattori

IPC: H01L21/311 ,  H01L21/32 ,  H01J37/32

CPC classification number: H01L21/31122 ,  H01J37/3244 ,  H01J37/32724 ,  H01J37/32834 ,  H01J2237/2001 ,  H01J2237/334

Abstract: To provide an etching processing method and an etching processing apparatus which allow an aluminum oxide film to be etched with high accuracy and with a high selectivity to each of a silicon oxide film and a silicon nitride film, the etching processing method includes the step of placing, in a processing chamber, a wafer having the aluminum oxide film disposed on an upper surface thereof, maintaining the wafer at a temperature of −20° C. or less, and supplying vapor of hydrogen fluoride from a plurality of through holes in a plate-like member disposed above the upper surface of the wafer with a predetermined gap being provided therebetween only for a predetermined period to etch the aluminum oxide film.

公开(公告)号：US11217454B2

公开(公告)日：2022-01-04

申请号：US16646057

申请日：2019-04-22

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Kazunori Shinoda ,  Hiroto Otake ,  Hiroyuki Kobayashi ,  Kohei Kawamura ,  Masaru Izawa

IPC: H01L21/311 ,  H01J37/18 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065

Abstract: The present invention provides a plasma processing method or a plasma processing method, which allows the evenness of etching amounts to increase and the yield of processing to improve.
A method for etching a tungsten film includes: a first step of depositing a fluorocarbon layer and forming an intermediate layer that contains tungsten and fluorine and is self-limiting between the fluorocarbon layer and the tungsten film by supplying plasma of an organic gas containing fluorine to a base material having the tungsten film over at least a part of the surface; and a second step of removing the fluorocarbon layer and the intermediate layer by using plasma of an oxygen gas.

公开(公告)号：US12125708B2

公开(公告)日：2024-10-22

申请号：US17276982

申请日：2020-04-10

Applicant: Hitachi High-Tech Corporation

Inventor： Takashi Hattori ,  Yu Zhao ,  Hiroyuki Kobayashi ,  Hiroto Otake

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/31116 ,  H01L21/02164 ,  H01L21/3065 ,  H01L21/67115

Abstract: Provided is an etching method for etching a silicon oxide film with a high accuracy at a high selection ratio with respect to a silicon nitride film, the etching method of etching a film structure, in which an end portion of a film layer in which the silicon oxide film and the silicon nitride film formed in advance on a wafer disposed in a processing chamber are alternately stacked in a vertical direction forms a side wall of a groove or a hole, by supplying processing gas into the processing chamber includes a step of supplying hydrogen fluoride and alcohol vapor into the processing chamber, maintaining the wafer at a temperature of −20° C. or lower, preferably −20° C. to −60° C., and etching the silicon oxide film from the end portion in a lateral direction.

公开(公告)号：US20220310403A1

公开(公告)日：2022-09-29

申请号：US17439756

申请日：2020-06-30

Applicant: Hitachi High-Tech Corporation

Inventor： Hiroto Otake ,  Takashi Hattori

IPC: H01L21/311 ,  H01J37/32

Abstract: To provide an etching processing method and an etching processing apparatus which allow an aluminum oxide film to be etched with high accuracy and with a high selectivity to each of a silicon oxide film and a silicon nitride film, the etching processing method includes the step of placing, in a processing chamber, a wafer having the aluminum oxide film disposed on an upper surface thereof, maintaining the wafer at a temperature of −20° C. or less, and supplying vapor of hydrogen fluoride from a plurality of through holes in a plate-like member disposed above the upper surface of the wafer with a predetermined gap being provided therebetween only for a predetermined period to etch the aluminum oxide film.