公开(公告)号：US12098039B2

公开(公告)日：2024-09-24

申请号：US17768745

申请日：2020-08-19

Applicant: Hitachi High-Tech Corporation

Inventor： Ryosuke Hoshi ,  Yasuaki Aoyama ,  Satoru Kaneko ,  Hiroyuki Kobayashi ,  Takeshi Tamakoshi ,  Hiroshi Watanabe ,  Katsuhiro Kambara ,  Kuniaki Onizawa

IPC: B65G54/02 ,  G01N35/04

CPC classification number: B65G54/02 ,  G01N35/04 ,  G01N2035/0477

Abstract: The weight of a body-to-be-conveyed constituting a conveying device is reduced, and the friction force between the sliding surface of the body-to-be-conveyed and the conveyance path is reduced. A body-to-be-conveyed that is a component of a conveying device that uses electromagnetic force as thrust and can move in a horizontal direction includes a mover in which a bottom surface is arranged so that a predetermined gap is formed in a vertical direction with respect to the sliding surface thereof, in which the mover includes a permanent magnet and a cover, a gap facing surface of the permanent magnet facing the gap includes one magnetic pole, the cover is installed on a side of the permanent magnet opposite from the gap facing surface in the vertical direction, the horizontal outermost diameter of the cover is larger than the horizontal outermost diameter of the permanent magnet, and the cover is formed of a flat plate.

公开(公告)号：US11915951B2

公开(公告)日：2024-02-27

申请号：US16913010

申请日：2020-06-26

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Hiroyuki Kobayashi ,  Nobuya Miyoshi ,  Kazunori Shinoda ,  Tatehito Usui ,  Naoyuki Kofuji ,  Yutaka Kouzuma ,  Tomoyuki Watanabe ,  Kenetsu Yokogawa ,  Satoshi Sakai ,  Masaru Izawa

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/48 ,  H01L21/66

CPC classification number: H01L21/67248 ,  C23C16/482 ,  H01J37/3299 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32917 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/67069 ,  H01L21/67098 ,  H01L21/67115 ,  H01L21/67207 ,  H01L22/12 ,  H01L22/20 ,  H01J2237/2001 ,  H01J2237/24585 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.

公开(公告)号：US11887780B2

公开(公告)日：2024-01-30

申请号：US17287899

申请日：2019-11-07

Applicant: Hitachi High-Tech Corporation

Inventor： Yasuaki Aoyama ,  Hiroyuki Kobayashi ,  Satoru Kaneko ,  Takeshi Tamakoshi ,  Ryosuke Hoshi ,  Katsuhiro Kambara ,  Hiroshi Watanabe ,  Kuniaki Onizawa

IPC: H01F7/06 ,  B65G54/02 ,  G01N35/02 ,  H01F7/02 ,  G01N35/04

CPC classification number: H01F7/064 ,  B65G54/02 ,  G01N35/028 ,  H01F7/02 ,  G01N2035/0477

Abstract: The present invention comprises: an object to be conveyed that has at least one permanent magnet 10; a magnetic pole 25 that has a core 22 comprising a second magnetic body and a winding 21 wound around the outer periphery of the core 22; a drive circuit 50 for supplying a current to the winding 21 of the magnetic pole 25; a current detection unit 30 for detecting the value of the current flowing through the winding 21; and a computation unit 40 for estimating the position of the permanent magnet 10 on the basis of the current value detected by the current detection unit 30 and controlling the value of the current supplied from the drive circuit 50 to the winding 21 on the basis of information about the estimated position of the permanent magnet 10.

公开(公告)号：US11276579B2

公开(公告)日：2022-03-15

申请号：US16495366

申请日：2018-11-14

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Hiroyuki Kobayashi ,  Nobuya Miyoshi ,  Kazunori Shinoda ,  Yutaka Kouzuma ,  Masaru Izawa

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/02

Abstract: A substrate processing method for reducing a surface roughness of a semiconductor wafer by processing a film structure having at least two types of films beforehand disposed on the substrate, including steps of repeating an adsorption step of supplying activated particles into the processing chamber and allowing the particles to be adsorbed to a surface of a desirable film to be etched in the at least two types of films to allow the particles to combine with a material of the desirable film to form a reaction layer, a removal step of using plasma generated by supplying oxygen into the processing chamber to remove a deposit containing particles adhering to a surface of an undesirable film to be etched in the films, and a desorption step of desorbing and removing the reaction layer on the desirable film to be etched by heating the sample.

公开(公告)号：US12125708B2

公开(公告)日：2024-10-22

申请号：US17276982

申请日：2020-04-10

Applicant: Hitachi High-Tech Corporation

Inventor： Takashi Hattori ,  Yu Zhao ,  Hiroyuki Kobayashi ,  Hiroto Otake

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/31116 ,  H01L21/02164 ,  H01L21/3065 ,  H01L21/67115

Abstract: Provided is an etching method for etching a silicon oxide film with a high accuracy at a high selection ratio with respect to a silicon nitride film, the etching method of etching a film structure, in which an end portion of a film layer in which the silicon oxide film and the silicon nitride film formed in advance on a wafer disposed in a processing chamber are alternately stacked in a vertical direction forms a side wall of a groove or a hole, by supplying processing gas into the processing chamber includes a step of supplying hydrogen fluoride and alcohol vapor into the processing chamber, maintaining the wafer at a temperature of −20° C. or lower, preferably −20° C. to −60° C., and etching the silicon oxide film from the end portion in a lateral direction.

公开(公告)号：US11772911B2

公开(公告)日：2023-10-03

申请号：US17596305

申请日：2020-04-07

Applicant: Hitachi High-Tech Corporation

Inventor： Yasuaki Aoyama ,  Ryosuke Hoshi ,  Satoru Kaneko ,  Hiroyuki Kobayashi ,  Takeshi Tamakoshi ,  Katsuhiro Kambara ,  Hiroshi Watanabe ,  Kuniaki Onizawa

IPC: B65G54/02 ,  H02K41/03 ,  H02K41/02

CPC classification number: B65G54/02 ,  H02K41/02 ,  H02K41/031 ,  B65G2201/0235

Abstract: Provided is a transport device in which reliability is increased by suppressing deterioration of the transport surface and transport efficiency is increased by suppressing electrical current loss. A transport device 1 comprising a transported body having either a permanent magnet 10 or a magnetic body, and an electromagnet unit in which coils 21 are wound around teeth 25 comprising magnetic bodies, and having recesses on surfaces of the teeth 25 facing the transported body. Specifically, the surfaces of the teeth 25 facing the transported body have at least two surfaces (first facing surface 22, second facing surface 23, etc.) which have different distances to the transported body.

公开(公告)号：US20230012173A1

公开(公告)日：2023-01-12

申请号：US17370131

申请日：2021-07-08

Applicant: Hitachi High-Tech Corporation

Inventor： Takashi Dobashi ,  Hiroyuki Kobayashi ,  Takeshi Ohmori

IPC: G05B13/04 ,  H01L21/66 ,  H01L21/67 ,  H01L21/3065 ,  G06N20/00 ,  G06T7/00

Abstract: To facilitate evaluation of a predicted process shape in process recipe development using machine learning, a process recipe search apparatus that searches for an etching recipe that is a parameter of a plasma processing apparatus set so as to etch a sample into a desired shape displays, on a display device, the predicted process shape of the sample by a candidate etching recipe predicted by using a machine leaning model, by highlighting a difference between the predicted process shape and a target shape.

公开(公告)号：US12230441B2

公开(公告)日：2025-02-18

申请号：US17614577

申请日：2020-04-07

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Ryosuke Hoshi ,  Yasuaki Aoyama ,  Satoru Kaneko ,  Hiroyuki Kobayashi ,  Takeshi Tamakoshi ,  Katsuhiro Kambara ,  Hiroshi Watanabe ,  Kuniaki Onizawa

IPC: H01F7/20 ,  H01F7/06 ,  H01F27/02 ,  H01F27/24 ,  H01F27/28

Abstract: A transport device and a transport method efficiently increase a thrust to suppress power consumption. The transport device has a first magnetic body on a side of a to-be-transported object, a magnetic circuit with a core consisting of a second magnetic body, and a winding wound around an outside of the core, and a drive circuit supplying a current to the winding of the magnetic circuit. The magnetic circuit has first and second magnetic circuits, and in a case where the first magnetic body is located on a side of the second magnetic circuit relative to a first predetermined position between the first magnetic circuit and the second magnetic circuit, the drive circuit supplies a current to a winding of the first magnetic circuit in such a manner to cause an electromagnetic repulsive force to be generated between the first magnetic body and the first magnetic circuit.

公开(公告)号：US12051574B2

公开(公告)日：2024-07-30

申请号：US16978911

申请日：2019-12-20

Applicant: Hitachi High-Tech Corporation

Inventor： Hiroyuki Kobayashi ,  Atsushi Sekiguchi ,  Tatehito Usui ,  Soichiro Eto ,  Shigeru Nakamoto ,  Kazunori Shinoda ,  Nobuya Miyoshi

IPC: H01J37/32 ,  H01L21/66

CPC classification number: H01J37/32963 ,  H01J37/3244 ,  H01J37/32651 ,  H01L22/26 ,  H01J2237/24507 ,  H01J2237/334

Abstract: This invention provides a wafer processing method comprising a process of irradiating a wafer to be processed placed on the upper surface of a sample table arranged in a processing chamber with light or electromagnetic waves to heat and remove a compound layer of a film layer that is preliminarily formed on the upper surface of the film layer of the upper surface of the wafer, wherein in the process, by receiving the light or electromagnetic waves reflected by the upper surface of the wafer, a signal indicating a temporal change in intensity using the wavelength of the light or electromagnetic waves as a parameter is corrected using information of the intensity of the light or electromagnetic waves detected by receiving the light or electromagnetic waves at a position on the circumferential side of the upper surface of the sample table.

公开(公告)号：US20220115239A1

公开(公告)日：2022-04-14

申请号：US17276982

申请日：2020-04-10

Applicant: Hitachi High-Tech Corporation

Inventor： Takashi Hattori ,  Yu Zhao ,  Hiroyuki Kobayashi ,  Hiroto Otake

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/67

Abstract: Provided is an etching method for etching a silicon oxide film with a high accuracy at a high selection ratio with respect to a silicon nitride film, the etching method of etching a film structure, in which an end portion of a film layer in which the silicon oxide film and the silicon nitride film formed in advance on a wafer disposed in a processing chamber are alternately stacked in a vertical direction forms a side wall of a groove or a hole, by supplying processing gas into the processing chamber includes a step of supplying hydrogen fluoride and alcohol vapor into the processing chamber, maintaining the wafer at a temperature of −20° C. or lower, preferably −20° C. to −60° C., and etching the silicon oxide film from the end portion in a lateral direction.