公开(公告)号：US20210327674A1

公开(公告)日：2021-10-21

申请号：US17260612

申请日：2018-08-27

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Toshiaki KUSUNOKI ,  Tomihiro HASHIZUME ,  Keigo KASUYA ,  Noriaki ARAI ,  Hiromitsu SEINO ,  Minoru KANEDA ,  Takashi OHSHIMA ,  Soichiro MATSUNAGA

IPC: H01J37/065 ,  H01J37/10 ,  H01J37/147 ,  H01J37/244 ,  H01J37/28

Abstract: The invention provides an electron source including a columnar chip of a hexaboride single crystal, a metal pipe that holds the columnar chip of the hexaboride single crystal, and a filament connected to the metal pipe at a central portion. The columnar chip of the hexaboride single crystal is formed into a cone shape at a portion closer to a tip than a portion held in the metal pipe, and a tip end portion having the cone shape has a (310) crystal face. Schottky electrons are emitted from the (310) crystal face. According to the invention, it is possible to provide a novel electron source having monochromaticity, long-term stability of an emitter current, and high current density.

公开(公告)号：US20220415603A1

公开(公告)日：2022-12-29

申请号：US17781267

申请日：2019-12-24

Applicant: Hitachi High-Tech Corporation

Inventor： Toshiaki KUSUNOKI ,  Tomihiro HASHIZUME ,  Noriaki ARAI ,  Keigo KASUYA

IPC: H01J37/075 ,  H01J9/18 ,  G01N23/2251

Abstract: In a Schottky emitter or a thermal field emitter using a hexaboride single crystal, side emission from portions other than an electron emission portion is reduced. An electron source according to the invention includes: a protrusion (40) configured to emit an electron when an electric field is generated; a shank (41) that supports the protrusion (40) and has a diameter decreasing toward the protrusion (40); and a body (42) that supports the shank (41), in which the protrusion (40), the shank (41), and the body (42) are each made of a hexaboride single crystal, and a part including the shank (41) and the body (42) excluding the protrusion (40) is covered with a material having a work function higher than that of the hexaboride single crystal.

公开(公告)号：US20230317401A1

公开(公告)日：2023-10-05

申请号：US18018900

申请日：2020-09-23

Applicant: Hitachi High-Tech Corporation

Inventor： Toshiaki KUSUNOKI ,  Noriaki ARAI ,  Tomihiro HASHIZUME ,  Keigo KASUYA

IPC: H01J37/073 ,  H01J37/28 ,  H01J9/02 ,  H01J9/04 ,  H01J37/075

CPC classification number: H01J37/073 ,  H01J37/28 ,  H01J9/025 ,  H01J9/04 ,  H01J37/075 ,  H01J2237/06341 ,  H01J2237/06316

Abstract: The current stability of a field emission electron source and a Schottky electron source where a {100} plane of a hexaboride single crystal is used as an electron emission surface is improved. The electron source includes a tip of a hexaboride single crystal with a axis, in which a top facet of a {100} plane that is surrounded by side facets including at least four {n11} planes and at least four {n10} planes where n represents an integer of 1, 2, or 3 is formed at a front end of the tip of the hexaboride single crystal, and a total area of the side facets of the {n11} planes is more than a total area of the side facets of the {n10} planes.