公开(公告)号：US20220415603A1

公开(公告)日：2022-12-29

申请号：US17781267

申请日：2019-12-24

Applicant: Hitachi High-Tech Corporation

Inventor： Toshiaki KUSUNOKI ,  Tomihiro HASHIZUME ,  Noriaki ARAI ,  Keigo KASUYA

IPC: H01J37/075 ,  H01J9/18 ,  G01N23/2251

Abstract: In a Schottky emitter or a thermal field emitter using a hexaboride single crystal, side emission from portions other than an electron emission portion is reduced. An electron source according to the invention includes: a protrusion (40) configured to emit an electron when an electric field is generated; a shank (41) that supports the protrusion (40) and has a diameter decreasing toward the protrusion (40); and a body (42) that supports the shank (41), in which the protrusion (40), the shank (41), and the body (42) are each made of a hexaboride single crystal, and a part including the shank (41) and the body (42) excluding the protrusion (40) is covered with a material having a work function higher than that of the hexaboride single crystal.

公开(公告)号：US20220351934A1

公开(公告)日：2022-11-03

申请号：US17621503

申请日：2019-07-02

Applicant: Hitachi High-Tech Corporation

Inventor： Erina KAWAMOTO ,  Soichiro MATSUNAGA ,  Souichi KATAGIRI ,  Keigo KASUYA ,  Takashi DOI ,  Tetsuya SAWAHATA ,  Minoru YAMAZAKI

IPC: H01J37/077 ,  H01J37/18 ,  H01J37/075

Abstract: The invention provides an electron beam apparatus that reduces a time required for an electron gun chamber to which a sputter ion pump and a non-evaporable getter pump are connected to reach an extreme high vacuum state. The electron beam apparatus includes an electron gun configured to emit an electron beam and the electron gun chamber to which the sputter ion pump and the non-evaporable getter pump are connected. The electron beam apparatus further includes a gas supply unit configured to supply at least one of hydrogen, oxygen, carbon monoxide, and carbon dioxide to the electron gun chamber.

公开(公告)号：US20210327674A1

公开(公告)日：2021-10-21

申请号：US17260612

申请日：2018-08-27

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Toshiaki KUSUNOKI ,  Tomihiro HASHIZUME ,  Keigo KASUYA ,  Noriaki ARAI ,  Hiromitsu SEINO ,  Minoru KANEDA ,  Takashi OHSHIMA ,  Soichiro MATSUNAGA

IPC: H01J37/065 ,  H01J37/10 ,  H01J37/147 ,  H01J37/244 ,  H01J37/28

Abstract: The invention provides an electron source including a columnar chip of a hexaboride single crystal, a metal pipe that holds the columnar chip of the hexaboride single crystal, and a filament connected to the metal pipe at a central portion. The columnar chip of the hexaboride single crystal is formed into a cone shape at a portion closer to a tip than a portion held in the metal pipe, and a tip end portion having the cone shape has a (310) crystal face. Schottky electrons are emitted from the (310) crystal face. According to the invention, it is possible to provide a novel electron source having monochromaticity, long-term stability of an emitter current, and high current density.

公开(公告)号：US20230352262A1

公开(公告)日：2023-11-02

申请号：US17928401

申请日：2020-06-29

Applicant: Hitachi High-Tech Corporation

Inventor： Keigo KASUYA ,  Shuhei ISHIKAWA ,  Kenji TANIMOTO ,  Takashi DOI ,  Soichiro MATSUNAGA ,  Hiroshi MORITA ,  Daigo KOMESU ,  Kenji MIYATA

IPC: H01J37/065 ,  H01J37/073 ,  H01J37/28

CPC classification number: H01J37/065 ,  H01J37/073 ,  H01J37/28

Abstract: In an electron source including a suppressor electrode having an opening at one end portion thereof in a direction along a central axis and an electron emission material having a distal end protruding from the opening, the suppressor electrode further includes a receding portion receding to a position farther from the distal end of the electron emission material than the opening in the direction along the central axis at a position in an outer peripheral direction than the opening, and at least a part of the receding portion is disposed within a diameter of 2810 μm from a center of the opening. Accordingly, an electron source, an electron gun, and a charged particle beam device such as an electron microscope using the same, in which a machine difference in a device performance due to an axial shift between the electron emission material and the suppressor electrode is reduced, are implemented.

公开(公告)号：US20230178325A1

公开(公告)日：2023-06-08

申请号：US17917305

申请日：2020-04-23

Applicant: Hitachi High-Tech Corporation

Inventor： Masahiro FUKUTA ,  Keigo KASUYA ,  Noriaki ARAI

IPC: H01J37/07 ,  H01J37/28

CPC classification number: H01J37/07 ,  H01J37/28 ,  H01J2237/061 ,  H01J2237/06375

Abstract: An electron gun 901 capable of suppressing an uneven temperature distribution at an extraction electrode and a length-measuring SEM 900 are provided. The electron gun 901 is equipped with: a charged particle source 1; an extraction electrode 3 for extracting charged particles from the charged particle source 1 and allowing some of the charged particles to pass while blocking some other charged particles; and an auxiliary structure 5 disposed in contact with the extraction electrode 3. The length-measuring SEM 900 is equipped with the electron gun 901 and a computer system 920 for controlling the electron gun 901.

公开(公告)号：US20220199349A1

公开(公告)日：2022-06-23

申请号：US17601421

申请日：2019-04-18

Applicant: Hitachi High-Tech Corporation

Inventor： Keigo KASUYA ,  Akira IKEGAMI ,  Kazuhiro HONDA ,  Masahiro FUKUTA ,  Takashi DOI ,  Souichi KATAGIRI ,  Aki TAKEI ,  Soichiro MATSUNAGA

IPC: H01J37/073

Abstract: A large current electron beam is stably emitted from an electron gun of a charged particle beam device. The electron gun of the charged particle beam device includes: a SE tip 202; a suppressor 303 disposed rearward of a distal end of the SE tip; a cup-shaped extraction electrode 204 including a bottom surface and a cylindrical portion and enclosing the SE tip and the suppressor; and an insulator 208 holding the suppressor and the extraction electrode. A shield electrode 301 of a conductive metal having a cylindrical portion 302 is provided between the suppressor and the cylindrical portion of the extraction electrode. A voltage lower than a voltage of the SE tip is applied to the shield electrode.

公开(公告)号：US20240379318A1

公开(公告)日：2024-11-14

申请号：US18691071

申请日：2021-10-19

Applicant: Hitachi High-Tech Corporation

Inventor： Keigo KASUYA ,  Shuhei ISHIKAWA ,  Kenji TANIMOTO ,  Shunichi WATANABE ,  Takashi DOI ,  Yusuke SAKAI

IPC: H01J37/073 ,  H01J37/28

Abstract: Provided is a charged particle beam device that can precisely manage a temperature at which a cold field emitter is heated. A charged particle beam device includes: a cold field emitter including a tip having a sharpened distal end, a filament connected to the tip, and an auxiliary electrode covering the filament and having an opening from which the tip protrudes; an extraction electrode to which an extraction voltage for extracting electrons from the cold field emitter is applied; and an acceleration electrode to which an acceleration voltage for accelerating the electrons extracted from the cold field emitter is applied. When the tip and the filament are heated, thermionic electrons emitted from the tip and the filament are collected by the auxiliary electrode to measure a current by applying a positive voltage with respect to the tip to the auxiliary electrode.

公开(公告)号：US20230317401A1

公开(公告)日：2023-10-05

申请号：US18018900

申请日：2020-09-23

Applicant: Hitachi High-Tech Corporation

Inventor： Toshiaki KUSUNOKI ,  Noriaki ARAI ,  Tomihiro HASHIZUME ,  Keigo KASUYA

IPC: H01J37/073 ,  H01J37/28 ,  H01J9/02 ,  H01J9/04 ,  H01J37/075

CPC classification number: H01J37/073 ,  H01J37/28 ,  H01J9/025 ,  H01J9/04 ,  H01J37/075 ,  H01J2237/06341 ,  H01J2237/06316

Abstract: The current stability of a field emission electron source and a Schottky electron source where a {100} plane of a hexaboride single crystal is used as an electron emission surface is improved. The electron source includes a tip of a hexaboride single crystal with a axis, in which a top facet of a {100} plane that is surrounded by side facets including at least four {n11} planes and at least four {n10} planes where n represents an integer of 1, 2, or 3 is formed at a front end of the tip of the hexaboride single crystal, and a total area of the side facets of the {n11} planes is more than a total area of the side facets of the {n10} planes.