公开(公告)号：US10217611B2

公开(公告)日：2019-02-26

申请号：US15057157

申请日：2016-03-01

Applicant: Hitachi High-Technologies Corporation

Inventor： Tooru Aramaki ,  Kenetsu Yokogawa ,  Masaru Izawa

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/311

Abstract: A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.

公开(公告)号：US10037909B2

公开(公告)日：2018-07-31

申请号：US14626911

申请日：2015-02-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Tooru Aramaki ,  Michikazu Morimoto ,  Kenetsu Yokogawa

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/683 ,  H01T23/00 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/32715

Abstract: In a plasma processing apparatus, a connector section with the film-like electrode of a sintered plate of a sample stage to which high-frequency power is supplied includes a conductor section disposed inside a through hole, an upper part of which is bonded to the film-like electrode and a lower part of which is connected to an end of a power supply path of the high-frequency power, and a boss disposed between the conductor section and a substrate surrounding an outer periphery of the conductor section inside the through hole and made of an insulating material. Upper ends of a rod-like member at the center of the conductor section and a socket surrounding the rod-like member are disposed at a position higher than the boss, and an adhesive is prevented from entering between the socket and the rod-like member in the upper end of the socket.

公开(公告)号：US20190115193A1

公开(公告)日：2019-04-18

申请号：US16218703

申请日：2018-12-13

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Naoki Yasui ,  Norihiko Ikeda ,  Tooru Aramaki ,  Yasuhiro Nishimori

IPC: H01J37/32 ,  H01L21/3065

Abstract: To improve processing uniformity by improving a working characteristic in an edge exclusion region. Provided is a plasma processing apparatus for processing a sample by generating plasma in a vacuum vessel to which a processing gas is supplied and that is exhausted to a predetermined pressure and by applying a radio frequency bias to a sample placed in the vacuum vessel, wherein a conductive radio frequency ring to which a radio frequency bias power is applied is arranged in a stepped part formed outside a convex part of the sample stage on which the wafer is mounted, and a dielectric cover ring is provided in the stepped part, covering the radio frequency ring, the cover ring substantially blocks penetration of the radio frequency power to the plasma from the radio frequency ring, and the radio frequency ring top surface is set higher than a wafer top surface.

公开(公告)号：US10811231B2

公开(公告)日：2020-10-20

申请号：US16228934

申请日：2018-12-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Tooru Aramaki ,  Kenetsu Yokogawa ,  Masaru Izawa

IPC: H01J37/32 ,  H01L21/311

Abstract: A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.

公开(公告)号：US11152192B2

公开(公告)日：2021-10-19

申请号：US16218703

申请日：2018-12-13

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Naoki Yasui ,  Norihiko Ikeda ,  Tooru Aramaki ,  Yasuhiro Nishimori

IPC: H01L21/3065 ,  H01J37/32

Abstract: To improve processing uniformity by improving a working characteristic in an edge exclusion region. Provided is a plasma processing apparatus for processing a sample by generating plasma in a vacuum vessel to which a processing gas is supplied and that is exhausted to a predetermined pressure and by applying a radio frequency bias to a sample placed in the vacuum vessel, wherein a conductive radio frequency ring to which a radio frequency bias power is applied is arranged in a stepped part formed outside a convex part of the sample stage on which the wafer is mounted, and a dielectric cover ring is provided in the stepped part, covering the radio frequency ring, the cover ring substantially blocks penetration of the radio frequency power to the plasma from the radio frequency ring, and the radio frequency ring top surface is set higher than a wafer top surface.

公开(公告)号：US10930476B2

公开(公告)日：2021-02-23

申请号：US15204183

申请日：2016-07-07

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Tooru Aramaki ,  Kenetsu Yokogawa ,  Masaru Izawa

IPC: H01J37/32 ,  C23C16/46 ,  C23C16/458 ,  C23C16/511

Abstract: A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.