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公开(公告)号：USD871609S1
公开(公告)日：2019-12-31
申请号：US29635296
申请日：2018-01-30
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公开(公告)号：USD870314S1
公开(公告)日：2019-12-17
申请号：US29635292
申请日：2018-01-30
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公开(公告)号：US10243140B2
公开(公告)日：2019-03-26
申请号：US15251595
申请日：2016-08-30
发明人： Makoto Satake , Masaki Yamada , Kenetsu Yokogawa
摘要： The present invention is a manufacturing method for manufacturing a magnetoresistive element, including a first step for oxidizing or reducing a magnetic film constituting the magnetoresistive element and a metal oxidation film constituting the magnetoresistive element, and a second step performed after the first step, wherein in the second step, in a case where the magnetic film constituting the magnetoresistive element and the metal oxidation film constituting the magnetoresistive element are oxidized, the oxidized magnetic film constituting the magnetoresistive element or the oxidized metal oxidation film constituting the magnetoresistive element is selectively reduced, and in a case where the magnetic film constituting the magnetoresistive element and the metal oxidation film constituting the magnetoresistive element are reduced, the reduced magnetic film constituting the magnetoresistive element or the reduced metal oxidation film constituting the magnetoresistive element is selectively oxidized.
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公开(公告)号：US11355322B2
公开(公告)日：2022-06-07
申请号：US15425014
申请日：2017-02-06
发明人： Taku Iwase , Masahito Mori , Takao Arase , Kenetsu Yokogawa
IPC分类号： H01J37/32
摘要： Disclosed herein is a plasma processing apparatus including: a processing chamber in which a sample is to be processed using plasma; a radio-frequency power source that supplies radio-frequency power for producing the plasma; and a sample stage on which the sample is to be mounted, the plasma processing apparatus further including a control unit that performs control so that plasma is produced after applying a DC voltage for electrostatically attracting the sample to the sample stage to each of two electrodes placed on the sample stage, and a heat-transfer gas for adjusting a temperature of the sample is supplied to a back surface of the sample after production of the plasma.
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公开(公告)号：US10930476B2
公开(公告)日：2021-02-23
申请号：US15204183
申请日：2016-07-07
发明人： Tooru Aramaki , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： H01J37/32 , C23C16/46 , C23C16/458 , C23C16/511
摘要： A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.
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公开(公告)号：US09779919B2
公开(公告)日：2017-10-03
申请号：US14972286
申请日：2015-12-17
IPC分类号： H01L21/00 , H01J37/32 , H01L21/683 , H01L21/67
CPC分类号： H01J37/32935 , H01J37/32082 , H01J37/32706 , H01J37/32715 , H01L21/67248 , H01L21/6831 , H01L21/6833
摘要： To control temperature of a sample in plasma processing with high accuracy while securing an electrostatic chucking force without breakdown of an electrostatic chucking film.When radio-frequency power is time modulated, a high-voltage side Vpp detector detects a first voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to a sample stage in a first period of the time modulation having a first amplitude. A low-voltage side Vpp detector detects a second voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to the sample stage in a second period having a second amplitude smaller than the first amplitude. Then, an ESC power supply control unit controls output voltages from ESC power supplies based on the first voltage value, the second voltage value and a duty ratio of the time modulation.
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公开(公告)号：US20160203958A1
公开(公告)日：2016-07-14
申请号：US14972286
申请日：2015-12-17
IPC分类号： H01J37/32 , H01L21/683 , H01L21/66 , H01L21/67
CPC分类号： H01J37/32935 , H01J37/32082 , H01J37/32706 , H01J37/32715 , H01L21/67248 , H01L21/6831 , H01L21/6833
摘要： To control temperature of a sample in plasma processing with high accuracy while securing an electrostatic chucking force without breakdown of an electrostatic chucking film.When radio-frequency power is time modulated, a high-voltage side Vpp detector detects a first voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to a sample stage in a first period of the time modulation having a first amplitude. A low-voltage side Vpp detector detects a second voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to the sample stage in a second period having a second amplitude smaller than the first amplitude. Then, an ESC power supply control unit controls output voltages from ESC power supplies based on the first voltage value, the second voltage value and a duty ratio of the time modulation.
摘要翻译： 以高精度控制等离子体处理中的样品的温度，同时确保静电吸附力而不会使静电吸附膜破裂。 当射频功率被时间调制时，高压侧Vpp检测器检测第一电压值，其是在时间调制的第一周期中施加到采样级的射频电压的峰 - 峰值电压值 具有第一幅度。 低压侧Vpp检测器检测第二电压值，该第二电压值是在具有小于第一幅度的第二幅度的第二周期中施加到采样级的射频电压的峰 - 峰值电压值。 然后，ESC电源控制单元基于第一电压值，第二电压值和时间调制的占空比来控制来自ESC电源的输出电压。
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公开(公告)号：US20190244795A1
公开(公告)日：2019-08-08
申请号：US16110525
申请日：2018-08-23
发明人： Takumi Tandou , Takamasa Ichino , Kenetsu Yokogawa
IPC分类号： H01J37/32 , H01L21/67 , H01L21/687 , H01L21/683
摘要： A plasma processing apparatus including: a processing chamber; a sample stage; a vacuum exhaust unit; and a plasma generation unit, the sample stage includes: a first metallic base material having a refrigerant flow path formed therein; a second metallic base material disposed above the first metallic base material and has a lower thermal conductivity than the first metallic base material; and a plurality of lift pins vertically moving the object to be processed with respect to the sample stage. A plurality of through-holes through which the plurality of the lift pins passes is formed in the first and the second metallic base material, and a boss, which electrically insulates the lift pin from the first and the second metallic base material and is formed using an insulating member having a higher thermal conductivity than the second metallic base material, is inserted into each of the plurality of through-holes.
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公开(公告)号：US10217611B2
公开(公告)日：2019-02-26
申请号：US15057157
申请日：2016-03-01
发明人： Tooru Aramaki , Kenetsu Yokogawa , Masaru Izawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32 , H01L21/311
摘要： A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.
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公开(公告)号：US10141207B2
公开(公告)日：2018-11-27
申请号：US15468259
申请日：2017-03-24
摘要： A vacuum processing apparatus includes a processing chamber inside a vacuum vessel, a plasma forming chamber above, a dielectric plate member having multiple through-holes for introducing particles of plasma to the processing chamber between the processing chamber and the plasma forming chamber above a sample stage upper surface in the processing chamber, heating lamp arranged around an outer periphery of the plate member to irradiate an electromagnetic wave to the wafer to heat, and a ring-shaped window member for transmitting the electromagnetic wave from the lamp. The apparatus performs, from the through-holes to the wafer, supplying particles of plasma formed in the plasma forming chamber to form a reaction product, extinguishing the plasma and heating the wafer to desorb the product, and supplying particles, formed in the plasma forming chamber, of the plasma of cleaning gas to the plasma forming chamber, the processing chamber, and the window member.
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