公开(公告)号：US20190241812A1

公开(公告)日：2019-08-08

申请号：US16260433

申请日：2019-01-29

Applicant: Hitachi Metals, Ltd.

Inventor： Tsuyoshi MIURA ,  Tamotsu KIBE ,  Makoto IWASAKI ,  Yoshiaki NAKAMURA

IPC: C09K21/14 ,  H01B3/30 ,  H01B7/295

CPC classification number: C09K21/14 ,  B32B1/08 ,  B32B27/16 ,  B32B27/18 ,  B32B27/32 ,  B32B2264/102 ,  B32B2264/108 ,  B32B2307/206 ,  B32B2307/30 ,  B32B2307/3065 ,  B32B2457/04 ,  C08K2003/2224 ,  C08L2201/02 ,  C08L2203/202 ,  H01B3/30 ,  H01B3/441 ,  H01B7/295 ,  H01B13/141 ,  C08L23/04

Abstract: In a multi-layer insulated wire including: a conductor; an inner layer formed in periphery of the conductor; and an outer layer formed in periphery of the inner layer, the inner layer is made of a resin composition containing a base polymer containing polyolefin as a main component, and the outer layer is made of a resin composition containing a base polymer containing polyolefin as a main component so as to contain 80 or more and 250 or less parts by mass of metallic hydroxide per 100 parts by mass of the base polymer. The multi-layer insulated wire having an expansion start temperature of the outer layer that is equal to or lower than 344° C. is used.

公开(公告)号：US20220310795A1

公开(公告)日：2022-09-29

申请号：US17686463

申请日：2022-03-04

Applicant: HITACHI METALS, LTD.

Inventor： Tsuyoshi MIURA ,  Hodaka ICHIKAWA ,  Naoya KIMURA ,  Hiroyuki OKUDA ,  Taisuke HIROOKA

IPC: H01L29/16 ,  H01L21/02 ,  C30B29/36 ,  C30B25/20 ,  C23C16/32

Abstract: A method for manufacturing a silicon carbide epitaxial substrate which has a first surface which is a (000-1) C-face, a silicon carbide epitaxial layer located on the first surface of the silicon carbide substrate, and a line-shaped surface defect density on a top surface of the silicon carbide epitaxial layer is less than 1.0 cm−2 and a stacking fault density is less than 1.2 cm−2.