-
公开(公告)号：US10319849B2
公开(公告)日：2019-06-11
申请号：US15102771
申请日：2014-12-12
发明人： Tetsuya Ishimaru , Mutsuhiro Mori , Junichi Sakano , Kohhei Onda
IPC分类号： H01L29/78 , H01L23/00 , H01L25/07 , H02K19/36 , H02K11/00 , H02M1/08 , H02M7/00 , H02M7/219 , H02K11/04 , H01L23/31 , H01L23/373 , H02M7/217 , H02P9/00 , H01L23/051 , H01L23/544 , H01L23/367 , H02M1/00
摘要： The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be attached to an alternator. On the first external electrode there mounted: a MOSFET chip; a control circuitry to which voltages at or a current flowing between a first main terminal and a second main terminal of the MOSFET chip is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate of the MOSFET chip; and a capacitor for providing a power supply to the control circuitry. The semiconductor device further has a second external electrode disposed opposite to the first external electrode with respect to the MOSFET chip. An electrical connection is made between the first main terminal of the MOSFET chip and the first external electrode, and between the second main terminal of the MOSFET chip and the second external electrode.
-
公开(公告)号：US20180191152A1
公开(公告)日：2018-07-05
申请号：US15819315
申请日：2017-11-21
CPC分类号： H02H7/067 , H02J7/14 , H02K11/046 , H02M1/08 , H02M3/33592 , H02M7/217 , H02M7/219 , H02M2007/2195 , Y02B70/1408 , Y02B70/1475
摘要： A rectifier includes a rectification MOSFET that performs rectification, a comparator formed by connecting a drain of the rectification MOSFET to a non-inverting input terminal and a source to an inverting input terminal, and a control circuit that performs an on/off control of the rectification MOSFET using an output of the comparator. The control circuit includes a shut-off MOSFET that disconnects a drain of the rectification MOSFET and a non-inverting input terminal of the comparator from each other, and a shut-off circuit that turns off the shut-off MOSFET to electrically disconnect the drain of the rectification MOSFET and the non-inverting input terminal of the comparator from each other when the drain voltage of the rectification MOSFET is equal to or higher than a predetermined first voltage.
-
公开(公告)号：US20150303268A1
公开(公告)日：2015-10-22
申请号：US14646375
申请日：2013-12-03
发明人： Tetsuya Ishimaru , Mutsuhiro Mori
IPC分类号： H01L29/36 , H02M5/458 , H01L29/861
CPC分类号： H01L29/36 , H01L21/2253 , H01L29/0619 , H01L29/0638 , H01L29/404 , H01L29/66128 , H01L29/861 , H01L29/8611 , H02M5/4585
摘要： It is an object of the present invention to provide a diode that can be produced with a simple method and performs a favorable recovery operation. The diode in accordance with the present invention includes a layer with a high concentration of dopants and a layer with a low concentration of dopants, and the layer with a low concentration of dopants further includes a layer with a different activation rate from other potions (see FIG. 1).
摘要翻译： 本发明的目的是提供一种二极管，其可以通过简单的方法制造并进行良好的恢复操作。 根据本发明的二极管包括具有高浓度掺杂剂的层和具有低浓度掺杂剂的层，并且具有低浓度掺杂剂的层还包括具有与其它药剂不同的活化速率的层（参见 图。1）。
-
公开(公告)号：US09966871B2
公开(公告)日：2018-05-08
申请号：US15104116
申请日：2014-12-12
发明人： Tetsuya Ishimaru , Kohhei Onda , Junichi Sakano , Mutsuhiro Mori
CPC分类号： H02M7/04 , H02M1/08 , H02M7/219 , H02M2001/0029 , H02M2007/2195 , H03K17/163 , Y02B70/1408
摘要： A rectifier including an autonomous type synchronous-rectification MOSFET is provided, which prevents chattering and through-current caused by a malfunction when a noise is applied. The rectifier includes: a rectification MOSFET for performing synchronous rectification; a determination circuit configured to input a voltage between a pair of main terminals of the rectification MOSFET, and to determine whether the rectification MOSFET is in on or off state on the basis of the inputted voltage; and a gate drive circuit configured such that a gate of the rectification MOSFET is turned on and off by a comparison signal from the determination circuit, and such that a time required to boost a gate voltage when the rectification MOSFET is turned on is longer than a time required to lower the gate voltage when the rectification MOSFET is turned off.
-
公开(公告)号：US11296212B2
公开(公告)日：2022-04-05
申请号：US16971547
申请日：2019-02-01
IPC分类号： H01L29/739 , H01L25/16 , H01L29/06
摘要： A current switching semiconductor device to be used in a power conversion device achieves both a low conduction loss and a low switching loss. The semiconductor device includes the IGBT in which only Gc gates are provided and an impurity concentration of the p type collector layer is high, and the IGBT in which the Gs gates and the Gc gates are provided and an impurity concentration of the p type collector layer is low. When the semiconductor device is turned off, the semiconductor device transitions from a state in which a voltage lower than a threshold voltage is applied to both the Gs gates and the Gc gates to a state in which a voltage equal to or higher than the threshold voltage is applied to the Gc gates prior to the Gs gates.
-
公开(公告)号：US10224425B2
公开(公告)日：2019-03-05
申请号：US15767310
申请日：2016-10-17
发明人： Yujiro Takeuchi , Mutsuhiro Mori
IPC分类号： H01L29/739 , H01L29/872 , H02M1/08 , H01L29/78 , H02M7/48 , H02M7/5387 , H03K17/0812 , H03K17/0814 , H03K17/16 , H01L29/10 , H01L29/16 , H02M1/00 , H02P27/06
摘要： An electric power converter (100) which is provided with a switching element (101) and a rectifying element (102) that is connected in series to the switching element (101). This electric power converter (100) has a configuration wherein an external electrical load (103) is connected to the connection point of the switching element (101) and the rectifying element (102). The switching element (101) is composed of an insulating gate type semiconductor element that has a first gate terminal (105) and a second gate terminal (106). The rectifying element (102) is composed of a diode that has a Schottky junction which uses silicon carbide as a semiconductor base. Different driving signals are applied to the first gate terminal (105) and the second gate terminal (106), respectively.
-
公开(公告)号：US09831145B2
公开(公告)日：2017-11-28
申请号：US15509882
申请日：2015-08-19
发明人： Tetsuya Ishimaru , Mutsuhiro Mori , Shinichi Kurita , Shigeru Sugayama , Junichi Sakano , Kohhei Onda
CPC分类号： H01L23/13 , H01L23/142 , H01L23/3142 , H01L24/01 , H01L25/07 , H01L25/11 , H01L25/16 , H01L25/18 , H01L2224/05554 , H01L2224/48091 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET on the basis of the voltage; a second external electrode which is disposed on an opposite side of the first external electrode with respect to the MOSFET chip and includes an external terminal on a center axis of the circular outer peripheral portion of the first external electrode; and an isolation substrate which isolates the control circuit chip from the external electrode. The first external electrode, the drain electrode and the source electrode of the MOSFET chip, and the second external electrode are disposed to be overlapped in a direction of the center axis. The drain electrode of the MOSFET chip and the first external electrode are connected. The source electrode of the MOSFET chip and the second external electrode are connected.
-
公开(公告)号：US11282937B2
公开(公告)日：2022-03-22
申请号：US16976393
申请日：2019-02-01
IPC分类号： H01L29/47 , H01L29/78 , H01L29/868
摘要： The invention provides an inexpensive flywheel diode having a low power loss. A semiconductor substrate side of a gate electrode provided on a surface of an anode electrode side of a semiconductor substrate including silicon is surrounded by a p layer, an n layer, and a p layer via a gate insulating film. The anode electrode is in contact with the p layer with a low resistance, and is also in contact with the n layer or the p layer, and a Schottky diode is formed between the anode electrode and the n layer or the p layer.
-
公开(公告)号：US11049965B2
公开(公告)日：2021-06-29
申请号：US16056332
申请日：2018-08-06
摘要： A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.
-
公开(公告)号：US10205314B2
公开(公告)日：2019-02-12
申请号：US15819315
申请日：2017-11-21
摘要： A rectifier includes a rectification MOSFET that performs rectification, a comparator formed by connecting a drain of the rectification MOSFET to a non-inverting input terminal and a source to an inverting input terminal, and a control circuit that performs an on/off control of the rectification MOSFET using an output of the comparator. The control circuit includes a shut-off MOSFET that disconnects a drain of the rectification MOSFET and a non-inverting input terminal of the comparator from each other, and a shut-off circuit that turns off the shut-off MOSFET to electrically disconnect the drain of the rectification MOSFET and the non-inverting input terminal of the comparator from each other when the drain voltage of the rectification MOSFET is equal to or higher than a predetermined first voltage.
-
-
-
-
-
-
-
-
-
搜索结果
12 条记录 (耗时 0.021 秒)
