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公开(公告)号：US4844323A
公开(公告)日：1989-07-04
申请号：US159229
申请日：1988-02-23
CPC分类号： B23K35/32 , C04B37/006 , C04B37/026 , C04B2237/122 , C04B2237/343 , C04B2237/365 , C04B2237/368 , C04B2237/406 , C04B2237/708
摘要： A method or joining ceramics comprising the steps: of preparing a ceramics body and another body to be connected with the ceramics body; of interposing a layer of ultra-fine particles having smaller size than the surface roughnesses of the contact surfaces of the ceramics body and the other body, the layer having larger thickness than the surface roughnesses, and the ultra-fine particles being reactive with the ceramics body and the other body and forming a reaction produce which has a strong bonding power to the ceramics body and the other body; and then of pressing and heating the piled composition of the ceramics body, other body and layer.
摘要翻译： 一种方法或接合陶瓷，包括以下步骤：制备陶瓷体和与陶瓷体连接的另一体; 所述超细粒子与陶瓷体和另一体的接触面的表面粗糙度相比尺寸小，该层的厚度比表面粗糙度大，超细粒子与陶瓷反应 形成对陶瓷体和另一体具有很强的结合力的反应产物; 然后对陶瓷体，其他体和层的堆叠组合物进行加压加热。
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公开(公告)号：US4892791A
公开(公告)日：1990-01-09
申请号：US173663
申请日：1988-03-25
IPC分类号： C01B21/064 , C23C14/02 , C23C14/06 , C23C16/34 , C23C16/50
CPC分类号： C23C14/027 , C23C14/0647 , Y10T428/24942
摘要： A body coated with cubic boron nitride comprises: a base material; a first interlayer of nitride or boride with which at least one element of IVb group, IIIb group, Vb group, IVa group, Va group and VIa group of the periodic table, in accordance with the quality of the material of the base material is mixed, and the composition ratio of the at least one element is decreased towards the surface, the first interlayer being formed on the base material; and/or a second interlayer of nitride or boride with which at least one element of IVb group, IIIb group, Vb group, IVa group, Va group and VIa group of the periodic table, in accordance with the quality of the material of the base material is mixed at the total mixing amount 0.01 atomic % to 10 atomic %, and shows an absorption peak at the wave number of 950 cm.sup.-1 to 1150 cm.sup.-1 according to the infrared absorption spectrum, the second interlayer being formed on the first interlayer or the base material; and a cubic boron nitride film which shows the maximum absorption peak at the wave number of 950 cm .sup.- 1 to 1150 cm.sup.-1 according to the infrared absorption spectrum, the cubic boron nitride film being formed on the first interlayer or the second interlayer. Or a body coated with cubic boron nitride comprises: a base material; a first interlayer of nitride or boride which includes at least one element of IVb group, IIIb group, Vb group, IVa group, Va group and VIa group of the periodic table, in accordance with the quality of the material of the base material, the first interlayer being formed on the base material; a second interlayer of nitride or boride with which at least one element of IVb group, IIIb group, Vb group, IVa group, Va group and VIa group of the periodic table, in accordance with the quality of the material of said base material is mixed, and the composition ratio of the at least one element is decreased towards the surface, the second interlayer being formed on the first interlayer; a third interlayer of nitride or boride with which at least one element of IVb group, IIIb group, Vb group, IVa group, Va group and VIa group of the periodic table, in accordance with the quality of the material of the base material is mixed at the total mixing amount of 0.01 atomic % to 10 atomic %, and shows an absorption peak at the wave number of 950 cm.sup.-1 to 1150 cm.sup.-1 according to the infrared absorption spectrum, the third interlayer being formed on said second interlayer; and a cubic boron nitride film which shows the maximum absorption peak at the wave number of 950 cm.sup.-1 to 1150 cm.sup.-1 according to the infrared absorption spectrum, the cubic boron nitride film being formed on said third interlayer. And a method for manufacturing a body coated with cubic boron nitride comprises the steps: of preparing a base material in a vacuum chamber; of preparing elements of at least one of IVb group, IIIB group, Vb group, IVa group, Va group and VIa group of the periodic table, being able to form a compound with boron and nitrogen, or the compound of the at least one group; of introducing the elements or compound into the vacuum chamber under the control of the evaporation rate or supply rate of the elements or compound, and concurrently under the control of the evaporation rate of boron; and a forming an interlayer of nitride or boride having a predetermined chemical composition between the base material and a cubic boron nitride film.
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3.发明授权
公开(公告)号：US5137772A
公开(公告)日：1992-08-11
申请号：US421540
申请日：1989-10-13
IPC分类号： C01B21/064 , C23C14/02 , C23C14/06 , C23C16/34 , C23C16/50
CPC分类号： C23C14/027 , C23C14/0647 , Y10T428/24942
摘要： A body coated with cubic boron nitride is disclosed which includes a base material, a first interlayer formed on the base material, a second interlayer formed on the first interlayer, a third interlayer formed on the second interlayer, and a cubic boron nitride film formed on the third interlayer. Each of the first and second interlayers comprises nitride or boride mixed with an adding element chosen from the IVb, IIIb, Vb, IVa, Va and VIa groups of the periodic table. In one embodiment of the invention, the composition ratio of the adding element to the nitride or boride decreases towards the surface between the second interlayer and the third interlayer. The third interlayer also contains nitride or boride mixed with an adding element chosen from the IVb, IIIb, Vb, IVa, Va and VIa groups of the periodic table. In one embodiment of the invention, the total mixing amount of the adding element in the third interlayer is 0.01 atomic % to 10 atomic %, and shows an absorption peak at the wave number of 950 cm.sup.-1 to 1150 cm.sup.-1 according to infrared absorption spectrum.
摘要翻译： 公开了一种涂有立方氮化硼的体，其包括基材，在基材上形成的第一中间层，形成在第一中间层上的第二中间层，形成在第二中间层上的第三中间层和形成在第二中间层上的立方氮化硼膜 第三层。 第一和第二夹层中的每一个包括与选自周期表的IVb，IIIb，Vb，IVa，Va和VIa族的添加元素混合的氮化物或硼化物。 在本发明的一个实施方案中，添加元素与氮化物或硼化物的组成比朝向第二中间层和第三中间层之间的表面减小。 第三层还包含与选自周期表的IVb，IIIb，Vb，IVa，Va和VIa族的添加元素混合的氮化物或硼化物。 在本发明的一个实施方案中，第三中间层中的添加元素的总混合量为0.01原子％至10原子％，并且根据红外线显示在950cm -1至1150cm -1的波数处的吸收峰 吸收光谱。
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公开(公告)号：US4941430A
公开(公告)日：1990-07-17
申请号：US185863
申请日：1988-04-25
CPC分类号： C23C14/24 , C23C14/0021 , C23C14/0647
摘要： An apparatus for forming a reactive deposition film includes a member for supporting a body to be coated in a vacuum chamber; an evaporation source of element constituting the reactive deposition film; apparatus for introducing a reaction gas into the vacuum chamber; bias apparatus for applying a high frequency or radio frequency (rf) bias voltage to the body; an electron beam generator for supplying electron beams towards the body; and a magnetic field generator which generates such a magnetic field that distributes the electron beams supplied from the electron beam generator uniformly to the whole region adjacent to the surface of the body and traps electrons from the electron beams in the region, whereby plasma of high density can be formed uniformly in the whole region adjacent to the surface of the body. In another apparatus, further a second bias apparatus for applying a DC (direct current) bias voltage or AC (alternate current) bias voltage to the gas introducing apparatus for activating the reaction is provided.
摘要翻译： 用于形成反应性沉积膜的装置包括：用于将待涂覆的主体支撑在真空室中的构件; 构成反应性沉积膜的元件的蒸发源; 用于将反应气体引入真空室的装置; 用于向身体施加高频或射频（RF）偏置电压的偏置装置; 用于向身体提供电子束的电子束发生器; 以及产生这样的磁场的磁场发生器，其将从电子束发生器供给的电子束均匀地分配到与身体表面相邻的整个区域，并从该区域中的电子束捕获电子，由此产生高密度的等离子体 可以在与身体表面相邻的整个区域中均匀地形成。 在另一种装置中，还提供了一种用于将DC（直流）偏置电压或AC（交流）偏置电压施加到用于激活反应的气体引入装置的第二偏置装置。
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