公开(公告)号：US5150447A

公开(公告)日：1992-09-22

申请号：US747621

申请日：1991-08-20

申请人： Hitoshi Tamada ,  Atsuo Yamada ,  Yukie Taneyama ,  Masaki Saitoh

发明人： Hitoshi Tamada ,  Atsuo Yamada ,  Yukie Taneyama ,  Masaki Saitoh

IPC分类号： G02B6/12 ,  G02B6/13 ,  G02F1/355 ,  G02F1/37 ,  G02F1/377

CPC分类号： G02F1/3558 ,  G02F1/3775 ,  G02F2202/20 ,  Y10S117/918

摘要： An optical waveguide, a dielectric device and method for fabricating such devices in which a substrate is polarized in a first direction and a dielectric thin film is formed on the surface of the substrate and polarized in the opposite direction to the substrate. Parallel grooves may be formed in the substrate. In one embodiment, a first dielectric thin film is formed on the substrate and is formed with grooves and is polarized in the same direction as the substrate. Then, a second dielectric thin film is formed over the first dielectric thin film and it is polarized in a direction which is opposite to the substrate and the first thin film.

公开(公告)号：US5341450A

公开(公告)日：1994-08-23

申请号：US861135

申请日：1992-03-31

申请人： Atsuo Yamada ,  Hitoshi Tamada ,  Masaki Saitoh

发明人： Atsuo Yamada ,  Hitoshi Tamada ,  Masaki Saitoh

IPC分类号： G02B6/12 ,  G02B6/13 ,  G02F1/035 ,  G02F1/313 ,  G02B6/00

CPC分类号： G02B6/131

摘要： Disclosed herein is an optical waveguide device of LiNbO.sub.3 which guides efficiently both or either of ordinary ray and extraordinary ray of visible light in the short wavelength region. It is prepared by forming an LiNbO.sub.3 thin film optical waveguide on an LiNbO.sub.3 substrate undoped or doped with MgO, with or without a base layer interposed between them, by liquid phase epitaxy which employs Li.sub.2 O-B.sub.2 O.sub.3 as the flux.

摘要翻译： 本文公开了一种LiNbO 3的光波导器件，其在短波长区域中有效地引导普通光线和非凡的可见光线中的任一种。 通过在未掺杂或掺杂有MgO的LiNbO 3衬底上形成LiNbO 3膜光波导，通过使用Li 2 O-B 2 O 3作为助熔剂的液相外延，在其间插入或不具有基极层，形成LiNbO 3膜光波导。

公开(公告)号：US5426310A

公开(公告)日：1995-06-20

申请号：US252548

申请日：1994-06-01

申请人： Hitoshi Tamada ,  Masaki Saitoh ,  Chiharu Isobe

发明人： Hitoshi Tamada ,  Masaki Saitoh ,  Chiharu Isobe

IPC分类号： C30B33/00 ,  G02B5/20 ,  F21V9/04 ,  C01B15/04

CPC分类号： C30B33/00 ,  C30B29/28

摘要： A heat treatment method heats an oxide optical crystal in an oxygen atmosphere containing ozone to improve the light absorption characteristics of the oxide optical crystal so that the light absorption of the oxide optical crystal with light in wavelength bands other than light in wavelength bands with which the oxide optical crystal exerts the intrinsic absorption is reduced to the least possible extent. Guided-optical-wave propagation devices and optical devices, such as optical isolators, optical recording media and second harmonic generators, employing the oxide optical crystal having these improved absorption characteristics, operate at a high efficiency.

摘要翻译： 热处理方法在含有臭氧的氧气氛中加热氧化物光学晶体，以提高氧化物光学晶体的光吸收特性，使得氧化物光学晶体的光在除波长带以外的波长带中的波长带 氧化物光学晶体发挥固有吸收，尽可能减小到最小程度。 引导光波传播装置和诸如光隔离器，光记录介质和二次谐波发生器的光学装置，采用具有这些改进的吸收特性的氧化物光学晶体以高效率运行。

公开(公告)号：US5022729A

公开(公告)日：1991-06-11

申请号：US424768

申请日：1989-10-20

申请人： Hitoshi Tamada ,  Masaki Saitoh

发明人： Hitoshi Tamada ,  Masaki Saitoh

IPC分类号： G02F1/35 ,  G02F1/37 ,  G02F1/377

CPC分类号： G02F1/3775 ,  G02F2001/3548 ,  G02F2001/374 ,  G02F2202/20

摘要： An optical waveguide apparatus arranged such that a Ta.sub.2 O.sub.5 -TiO.sub.2 system amorphous thin film is formed on a substrate. This optical waveguide apparatus can perform optical waveguiding at high efficiency. Also, an optical waveguide-type second harmonic generator of Cerenkov radiation type arranged such that the amorphous thin film is formed on a non-linear optical crystal substrate. This optical waveguide-type second harmonic generator can efficiently perform the confinement of light, whereby a fundamental wave of near-infrared rays can be received and a second harmonic wave radiated to the substrate side can be obtained with high efficiency. Further, in a second harmonic generator (SHG) in which the amorphous optical waveguide is formed on an LiNbO.sub.3 non-linear optical crystal substrate on which surface is formed a periodically-poled region, this second harmonic generator can very efficiently generate a light having a wavelength of half of a semiconductor laser light of 0.8 micrometer band by selecting a relationship between a periodically-poled region cycle .LAMBDA. and a thickness h of an optical waveguide.

公开(公告)号：US5459807A

公开(公告)日：1995-10-17

申请号：US193523

申请日：1994-02-08

申请人： Tohru Doumuki ,  Hitoshi Tamada ,  Masaki Saitoh

发明人： Tohru Doumuki ,  Hitoshi Tamada ,  Masaki Saitoh

IPC分类号： G02B6/12 ,  G02B6/136 ,  G02F1/377

CPC分类号： G02B6/136 ,  G02F1/377 ,  G02B2006/12054 ,  G02B2006/12097

摘要： An optical waveguide device for use as a second harmonic generator includes a nonlinear optical crystalline substrate of KTiOPO.sub.4 and an optical waveguide core of a dielectric material, such as Ta.sub.2 O.sub.5, disposed on the nonlinear optical crystalline substrate. The optical waveguide converts a fundamental wave having a wavelength .lambda. which is guided through the optical waveguide into a second harmonic wave having a wavelength .lambda./2, the second harmonic wave having the same polarization as the fundamental wave which is guided through the optical waveguide. The optical waveguide has a thickness of 190 nm or greater. The optical waveguide device also has a dielectric loaded strip disposed on the optical waveguide core. The dielectric loaded strip may be made of SiO.sub.2 or SiO.sub.2 doped with Ta.sub.2 O.sub.5. Alternatively, the optical waveguide may be a ridge-type optical waveguide, and the optical waveguide device may also has a cladding layer disposed on the nonlinear optical crystalline substrate and the optical waveguide core.

摘要翻译： 用作二次谐波发生器的光波导器件包括设置在非线性光学晶体衬底上的KTiOPO4的非线性光学晶体衬底和诸如T​​a 2 O 5的介电材料的光波导芯。 光波导将具有通过光波导引导的波长λ的基波转换成具有波长λ/ 2的二次谐波，二次谐波具有与通过光波导引导的基波相同的偏振。 光波导的厚度为190nm以上。 光波导器件还具有设置在光波导芯上的介质负载条。 介电负载带可以由掺杂有Ta 2 O 5的SiO 2或SiO 2制成。 或者，光波导可以是脊型光波导，并且光波导器件也可以具有设置在非线性光学晶体基板和光波导芯上的包层。

公开(公告)号：US5168388A

公开(公告)日：1992-12-01

申请号：US686434

申请日：1991-04-17

申请人： Hitoshi Tamada ,  Masaki Saitoh ,  Chiharu Isobe

发明人： Hitoshi Tamada ,  Masaki Saitoh ,  Chiharu Isobe

IPC分类号： G02B6/122 ,  G02F1/37 ,  G02F1/377

CPC分类号： G02B6/122 ,  G02F1/377 ,  G02F2001/374

摘要： An optical waveguide device is disclosed which comprises a KTiOPO.sub.4 single crystal substrate and an amorphous optical waveguide formed of Ta.sub.2 O.sub.5 or Ta.sub.2 O.sub.5 doped with TiO.sub.2. A second harmonic generator device in the form of the Cerenkov radiation using the optical waveguide has high SHG efficiency. Since the Cerenkov angle can be made small by optimizing the dimensions, the spread angle of the SHG light can be made small.

公开(公告)号：US20120305930A1

公开(公告)日：2012-12-06

申请号：US13575959

申请日：2011-02-01

申请人： Naoki Makita ,  Hiroki Mori ,  Masaki Saitoh

发明人： Naoki Makita ,  Hiroki Mori ,  Masaki Saitoh

IPC分类号： H01L29/786 ,  H01L21/8238 ,  H01L21/336

CPC分类号： H01L27/1214 ,  H01L27/092 ,  H01L27/1108 ,  H01L27/1222 ,  H01L27/1277 ,  H01L27/1288 ,  H01L29/045 ,  H01L29/78696

摘要： A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer (27), and the second thin film transistor has a second semiconductor layer (22). The first semiconductor layer (27) and the second semiconductor layer (22) are formed from one and the same film. Each of the first semiconductor layer (27) and the second semiconductor layer (22) has a slope portion (27e, 22e) positioned in the periphery and a main portion (27m, 22m) which is a portion excluding the slope portion. A p-type impurity is introduced into only a part of the slope portion (27e) of the first semiconductor layer with higher density than the main portion (27m) of the first semiconductor layer, the main portion (22m) of the second semiconductor layer, and the slope portion (22e) of the second semiconductor layer. Accordingly, a driving voltage of the semiconductor device provided with the n-type TFT and the p-type TFT can be reduced.

摘要翻译： 本发明的半导体器件在同一衬底上包括n沟道第一薄膜晶体管和p沟道第二薄膜晶体管。 第一薄膜晶体管具有第一半导体层（27），第二薄膜晶体管具有第二半导体层（22）。 第一半导体层（27）和第二半导体层（22）由同一膜形成。 第一半导体层（27）和第二半导体层（22）中的每一个具有位于周边的倾斜部分（27e，22e）和除斜坡部分之外的部分的主要部分（27m，22m）。 仅在第一半导体层的倾斜部分（27e）的一部分中，比第一半导体层的主要部分（27m）更高的密度，将第二半导体层的主要部分（22m）引入p型杂质 ，和第二半导体层的倾斜部分（22e）。 因此，可以减小设置有n型TFT和p型TFT的半导体器件的驱动电压。

公开(公告)号：US08140957B2

公开(公告)日：2012-03-20

申请号：US12023762

申请日：2008-01-31

申请人： Yoshio Horiuchi ,  Masaki Saitoh

发明人： Yoshio Horiuchi ,  Masaki Saitoh

IPC分类号： G06F17/27

CPC分类号： G06F17/24 ,  G06F3/0481 ,  G06F17/2247

摘要： The present invention aims at automatically selecting an object which should be displayed in a simplified form in a manner such that user friendliness is not reduced and the drawing time is shortened. To this end, the invention provides a system for controlling a screen display, which includes a structure acquisition unit configured to acquire tree structure data, as structure data defining a structure of a document to be displayed on a screen, in which a plurality of display objects are represented as nodes and a display object indicating a more detailed configuration of a display object at a parent node is represented as a child node, a time acquisition unit configured to acquire required time data which indicates time that has been previously required to draw each of the display objects on the screen, a selection unit configured to select, among the display objects at leaf nodes of the structure data, a display object having an evaluation value obtained based on the required time data which indicates that the required time is longer, preferentially to a display object having an evaluation value which indicates that the required time is shorter, and a drawing control unit configured to draw a display object other than the selected display object preferentially to the selected display object on the screen.

摘要翻译： 本发明旨在自动选择应以简化形式显示的对象，使得不减少用户友好性并缩短绘制时间。 为此，本发明提供了一种用于控制屏幕显示的系统，其包括被配置为获取树结构数据的结构获取单元，作为定义要在屏幕上显示的文档的结构的结构数据，其中多个显示 对象被表示为节点，并且指示在父节点处的显示对象的更详细配置的显示对象被表示为子节点，时间获取单元被配置为获取所需时间数据，其指示先前需要绘制每个 的选择单元，被配置为在结构数据的叶节点处的显示对象之中选择具有基于所需时间数据获得的评估值的显示对象，所述时间数据指示所需时间更长， 优选地具有具有指示所需时间更短的评估值的显示对象，以及绘图控制单元配置 ed将所选择的显示对象之外的显示对象优先地绘制到屏幕上的所选择的显示对象。

公开(公告)号：US20060161841A1

公开(公告)日：2006-07-20

申请号：US11293477

申请日：2005-12-02

申请人： Yoshio Horiuchi ,  Masabumi Koinuma ,  Mari (Kuroki) Onishi ,  Masaki Saitoh

发明人： Yoshio Horiuchi ,  Masabumi Koinuma ,  Mari (Kuroki) Onishi ,  Masaki Saitoh

IPC分类号： G06F17/00

CPC分类号： G06F17/248

摘要： The present invention improves application of a style to a view object when a document for a Web page to be edited is edited on a browser-type edit screen. First, a view object is detected from a managed document. Then, a direct style directly described in the managed document and an indirect style identified only by referring to an external document are collected. A browser-type edit screen is generated in which the direct and indirect styles are applied to each view object. The content of the managed document is synchronized with the edited content on the browser-type edit screen based on the editing operations on the browser-type edit screen.

摘要翻译： 当在浏览器型编辑屏幕上编辑要编辑的网页的文档时，本发明改进了对视图对象的风格的应用。 首先，从被管理文档检测到视图对象。 然后，收集直接在托管文档中描述的直接样式，以及仅通过引用外部文档识别的间接样式。 生成浏览器类型编辑屏幕，其中将直接和间接样式应用于每个视图对象。 基于浏览器类型编辑画面上的编辑操作，托管文档的内容与浏览器型编辑画面上编辑的内容同步。

公开(公告)号：US09105652B2

公开(公告)日：2015-08-11

申请号：US14119407

申请日：2012-05-21

申请人： Masaki Saitoh

发明人： Masaki Saitoh

IPC分类号： H01L21/00 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L21/266

CPC分类号： H01L29/66492 ,  H01L21/266 ,  H01L27/1288 ,  H01L29/66757 ,  H01L29/78624

摘要： A resist layer (46a) including a thick film section (47a), which is relatively thick, at one side thereof, and a thin film section (47b), which is relatively thin, at the other side thereof is formed using a multiple-tone mask. A gate electrode (15a) is formed at a place where it will be provided on a semiconductor layer (12a) so as to be narrower than the resist layer (46a), by executing isotropic etching to a conductive film (44) formed in advance using the resist layer (46a) as a mask, in order to form overhang portions (48) on the resist layer (46a) at both sides of the gate electrode (15a). Then, the entire thin film section (47b) is removed, the thick film section (47a) is made thinner, and impurities are implanted into the semiconductor layer (12a) using the remaining resist layer (46a) and the gate electrode (15a) as masks.

摘要翻译： 在其另一侧，形成包括相对较厚的厚膜部分（47a）的抗蚀剂层（46a）和薄膜部分（47a），其薄膜部分（47b）的另一侧是较薄的， 色调面膜。 通过对预先形成的导电膜（44）进行各向同性蚀刻，在半导体层（12a）上设置栅极电极（15a）以比抗蚀剂层（46a）窄的方式形成栅电极 使用抗蚀剂层（46a）作为掩模，以便在栅电极（15a）的两侧在抗蚀剂层（46a）上形成悬伸部分（48）。 然后，除去整个薄膜部分（47b），使厚膜部分（47a）变薄，并且使用剩余的抗蚀剂层（46a）和栅电极（15a）将杂质注入到半导体层（12a）中， 作为面具。