摘要:
Plasma producing method and apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a phase controller and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device controls a phase of a high-frequency voltage applied to each antenna, and thereby controls an electron temperature of the inductively coupled plasma.
摘要:
A plasma generating method and apparatus which use plural high-frequency antennas 2 to generate inductively coupled plasma, and a plasma processing apparatus using the apparatus. The antennas 2 are identical to one another. Application of a high-frequency electric power to the antennas 2 is performed from a high-frequency power source 4 which is disposed commonly to the antennas 2, through one matching circuit 5 and one busbar 3. The busbar 3 is partitioned into sections the number of which is equal to that of the antennas, while setting a portion which is connected to the matching circuit 5, as a reference. One-end portions of the antennas are connected to corresponding sections 31, 32, 33 through power supplying lines 311, 321, 331. The other end portions of the antennas are grounded. The impedances of the sections of the busbar, and those of the power supplying lines are adjusted so that same currents flow through the antennas, and a same voltage is applied to the antennas. Therefore, the inductively coupled plasma is generated while uniformalizing high-frequency electric powers supplied to the antennas 2.
摘要:
A plasma generating method and apparatus which use plural high-frequency antennas 2 to generate inductively coupled plasma, and a plasma processing apparatus using the apparatus. The antennas 2 are identical to one another. Application of a high-frequency electric power to the antennas 2 is performed from a high-frequency power source 4 which is disposed commonly to the antennas 2, through one matching circuit 5 and one busbar 3. The busbar 3 is partitioned into sections the number of which is equal to that of the antennas, while setting a portion which is connected to the matching circuit 5, as a reference. One-end portions of the antennas are connected to corresponding sections 31, 32, 33 through power supplying lines 311, 321, 331. The other end portions of the antennas are grounded. The impedances of the sections of the busbar, and those of the power supplying lines are adjusted so that same currents flow through the antennas, and a same voltage is applied to the antennas. Therefore, the inductively coupled plasma is generated while uniformalizing high-frequency electric powers supplied to the antennas 2.
摘要:
Plasma producing method and apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a phase controller and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device controls a phase of a high-frequency voltage applied to each antenna, and thereby controls an electron temperature of the inductively coupled plasma.
摘要:
One or more high-frequency antennas is allocated to and disposed in one cubic space C having a side of 0.4 [m] in a plasma generating chamber 1 or in each of plural cubic spaces C, each having a side of 0.4 [m], adjacent ones of the plural cubic spaces being continuous to each other without forming a gap therebetween. The total length L [m] of the high-frequency antennas in each of the cubic spaces C is set in a range which satisfies relationships of (0.2/P)
摘要:
Plasma producing method and apparatus as well as plasma processing apparatus including the plasma producing apparatus wherein one or more high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power is applied to a gas in the chamber from the antenna(s) to produce inductively coupled plasma. Impedance of the high-frequency antenna is set in a range of 45 Ω or lower.
摘要:
Plasma producing method and apparatus as well as plasma processing apparatus utilizing the plasma producing apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a matching box and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device supplies the high-frequency power to each antenna from terminals of the antennas on the same side.
摘要:
This invention utilizes the fact that a maximum density difference of pixels in a window within a predetermined range including a pixel of interest is large for a character region, and is small for a photograph region. A maximum density difference of an image within the predetermined region is calculated. A quantization error of pixels around the pixel of interest is calculated, and a correction amount is then calculated by proportionally distributing the quantization error in accordance with a feature amount calculated by a feature amount calculator. The correction amount is added to an image signal of the pixel of interest to form a compensation image signal, and the compensation image signal is quantized.
摘要:
A image processing apparatus includes a dither processor, which converts an electrical signal representing a continuous-tone input image into a binary image singal by a dither method using a dither matrix. The binary image signal is stored in a memory, and supplied to a pixel-density conversion processor, which converts a pixel density of the binary image signal at a predetermined ratio, and generates a converted image with the pixel coordinates as defined by the conversion ratio. A pixel coordinate calculator calculates a coordinate position of each pixel of the converted image in the binary image, and selects a fiducial pixel. A reference pixel selector defines a window area on the binary image containing the fiducial pixel and corresponding in size to the dither matrix size, and extracts reference picture elements in the window area. A calculator calculates an average image-density of the reference picture elements and generates density data, which is binarized by a second dither processor by using a second dither matrix.
摘要:
A color copying apparatus includes a color image sensor, an image information signal processing unit, and a color printer. The apparatus converts the three color component signals from the color image sensor into a luminance signal component and color difference signal components. At least one of the luminance signal component and the color difference signal components is subject to a nonlinear conversion. For density conversion between an input image and an output image, the luminance signal component is subject to a nonlinear conversion in a nonlinear conversion circuit.