专利检索 ap:("Ho-Jin LEE" OR "Pil-Kyu KANG" OR "Kyu-Ha LEE" OR "Byung-Lyul PARK" OR "Hyun-Soo CHUNG" OR "Gil-Heyun CHOI") AND inv:"Kyu-Ha LEE" 第 1 页

1.

发明申请
VIA CONNECTION STRUCTURES, SEMICONDUCTOR DEVICES HAVING THE SAME, AND METHODS OF FABRICATING THE STRUCTURES AND DEVICES 有权
标题翻译：通过连接结构，具有该连接结构的半导体器件，以及制作结构和器件的方法

公开(公告)号：US20130200525A1

公开(公告)日：2013-08-08

申请号：US13718580

申请日：2012-12-18

申请人： Ho-Jin LEE , Pil-Kyu KANG , Kyu-Ha LEE , Byung-Lyul PARK , Hyun-Soo CHUNG , Gil-Heyun CHOI

发明人： Ho-Jin LEE , Pil-Kyu KANG , Kyu-Ha LEE , Byung-Lyul PARK , Hyun-Soo CHUNG , Gil-Heyun CHOI

IPC分类号： H01L23/48

CPC分类号： H01L23/481 , H01L21/76898 , H01L23/525 , H01L24/05 , H01L24/13 , H01L24/16 , H01L2224/02372 , H01L2224/0401 , H01L2224/05 , H01L2224/05024 , H01L2224/05027 , H01L2224/05568 , H01L2224/06181 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/16145 , H01L2924/00014 , H01L2924/13091 , H01L2924/00 , H01L2224/05552

摘要： A semiconductor device including a lower layer, an insulating layer on a first side of the lower layer, an interconnection structure in the insulating layer, a via structure in the lower layer. The via structure protrudes into the insulating layer and the interconnection structure.

摘要翻译： 一种半导体器件，包括下层，在下层的第一侧上的绝缘层，绝缘层中的互连结构，下层中的通孔结构。通孔结构突出到绝缘层和互连结构中。