公开(公告)号：US20120132276A1

公开(公告)日：2012-05-31

申请号：US13389398

申请日：2010-07-30

申请人： Ho-gi Bae ,  Jong-bok Kim ,  Hyun-Cheol An ,  Kee-Doo Lee

发明人： Ho-gi Bae ,  Jong-bok Kim ,  Hyun-Cheol An ,  Kee-Doo Lee

IPC分类号： H01L31/0224 ,  H01L51/42

CPC分类号： H01G9/2004 ,  H01G9/2031 ,  H01G9/2059 ,  Y02A30/62 ,  Y02B10/10 ,  Y02E10/542 ,  Y02P70/521

摘要： The invention relates to a dye-sensitized solar cell and a module using the same and more particularly, to a dye-sensitized solar cell in which a photoelectrode substrate and a catalyst electrode substrate are spaced apart from each other by a separating space and coupled together by an encapsulating material and the separating space is filled with an electrolyte, characterized in that the electrolyte contains optical beads, and a module using the same. Thus, light passing through the photoelectrode substrate is refracted or reflected by the optical beads, and irradiated onto the photoelectrode substrate, thereby to improve the efficiency of the solar cell. Particularly, the efficiency of a dye-sensitized solar cell for a BIPV system is more effectively improved, said solar cell not having a separate scattering layer for maintaining the translucency thereof. If the optical beads are colored, solar cells with a variety of colors can be obtained, which achieves an aesthetic enhancement for a building adopting the BIPV system.

摘要翻译： 本发明涉及一种染料敏化太阳能电池及使用该染料敏化太阳能电池的模块，更具体地说，涉及一种染料敏化太阳能电池，其中光电极基板和催化剂电极基板通过分隔空间彼此间隔开并耦合在一起 通过封装材料并且分离空间填充有电解质，其特征在于电解质包含光学珠粒和使用其的模块。 因此，通过光电极基板的光被光学珠粒折射或反射，并且照射到光电极基板上，从而提高太阳能电池的效率。 特别地，更有效地提高了用于BIPV系统的染料敏化太阳能电池的效率，所述太阳能电池不具有用于保持其半透明度的单独的散射层。 如果光学珠粒被着色，则可以获得具有各种颜色的太阳能电池，这对于采用BIPV系统的建筑物而言，其获得了美学增强。

公开(公告)号：US5631185A

公开(公告)日：1997-05-20

申请号：US499327

申请日：1995-07-07

申请人： Young-pil Kim ,  Jong-bok Kim ,  Kweon-jae Lee

发明人： Young-pil Kim ,  Jong-bok Kim ,  Kweon-jae Lee

IPC分类号： H01L27/08 ,  H01L21/02 ,  H01L21/8242 ,  H01L27/06 ,  H01L27/108 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L27/10852 ,  H01L27/10817 ,  H01L28/87

摘要： A method for manufacturing a capacitor of a semiconductor memory device is provided. A first insulating layer and a second insulating layer are formed in sequence on a semiconductor substrate on which a transistor including a source region, a drain region and a gate electrode, and a buried bit-line surrounded by insulating layer are formed. Then, a contact hole is formed by sequentially etching the layers stacked on the source region, by which the source region of the transistor is exposed, and a spacer made of an insulating substance is formed inside the contact hole, and a first conductive layer is formed on the whole surface of the resultant. Next, the first conductive layer and second insulating layer are etched, and a second conductive layer is formed on the whole surface of the resultant, and a storage electrode is formed by etching the second conductive layer using the first conductive layer as a mask. According to the method, the step for forming the contact hole is very simple and less photolithography steps are required since the first conductive layer is used as a mask for etching the second conductive layer, thereby simplifying the manufacturing process.

摘要翻译： 提供一种制造半导体存储器件的电容器的方法。 在半导体衬底上依次形成第一绝缘层和第二绝缘层，在半导体衬底上形成包括源极区，漏极区和栅电极的晶体管，以及由绝缘层包围的掩埋位线。 然后，通过依次蚀刻堆叠在源区域上的层，形成晶体管的源极区域而暴露的层，并且在接触孔内部形成由绝缘物质构成的间隔物，并且第一导电层为 形成在所得物的整个表面上。 接下来，蚀刻第一导电层和第二绝缘层，并且在所得的整个表面上形成第二导电层，并且通过使用第一导电层作为掩模蚀刻第二导电层来形成存储电极。 根据该方法，用于形成接触孔的步骤非常简单，因为使用第一导电层作为用于蚀刻第二导电层的掩模，因此简化了制造工艺，因此需要较少的光刻步骤。

公开(公告)号：US5714401A

公开(公告)日：1998-02-03

申请号：US521985

申请日：1995-08-31

申请人： Young-pil Kim ,  Jong-bok Kim ,  Won-sik Lee ,  Yong-hee Lee

发明人： Young-pil Kim ,  Jong-bok Kim ,  Won-sik Lee ,  Yong-hee Lee

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108

CPC分类号： H01L27/10852 ,  H01L27/10817

摘要： A method is provided for manufacturing a capacitor of a semiconductor device. First, an insulating layer, an etching barrier layer, a first material layer and a second material layer are sequentially stacked on a semiconductor substrate on which a field oxide layer and a gate electrode are formed, and predetermined portions of the stacked layers are sequentially etched to form a contact hole exposing the substrate. Then, a first conductive layer is formed on thge whole surface of the resultant structure having the contact hole. Subsequently, a storage electrode pattern is formed by patterning the first conductive layer and etching the second material layer. Then, a second conductive layer is formed on the whole surface of the resultant structure so as to cover the storage electrode pattern and the first material layer. Thereafter, the second conductive layer is etched to expose the upper surface of the storage electrode pattern. Therefore, the capacitor manufacturing process, particularly, the etching process, is simplified, and can be applied to a capacitor having a COB structure.

摘要翻译： 提供一种用于制造半导体器件的电容器的方法。 首先，将绝缘层，蚀刻阻挡层，第一材料层和第二材料层依次层叠在其上形成有场氧化物层和栅电极的半导体基板上，并且层叠的预定部分被依次蚀刻 以形成露出衬底的接触孔。 然后，在具有接触孔的所得结构的整个表面上形成第一导电层。 随后，通过图案化第一导电层并蚀刻第二材料层来形成存储电极图案。 然后，在所得结构的整个表面上形成第二导电层，以覆盖存储电极图案和第一材料层。 此后，蚀刻第二导电层以暴露存储电极图案的上表面。 因此，电容器制造工艺，特别是蚀刻工艺被简化，并且可以应用于具有COB结构的电容器。