摘要:
Provided is a memory system that includes at least one nonvolatile memory device, a plurality of power lines and a plurality of power domains. The power lines receive a power source voltage. The power domains are respectively connected to the power lines. A reset signal is generated by using voltages which are detected from the power lines. The memory system and a reset method thereof detect the voltages of all power lines to generate a reset signal, and thus enhance reliability of data when a power is shut off.
摘要:
A data storage device including a reset circuit and a method of resetting thereof includes a memory device to receive a driving voltage through a power terminal thereof, a voltage regulator to adjust an external voltage to provide the adjusted voltage to the power terminal of the memory device, and a reset circuit to discharge an enable terminal of the voltage regulator or the power terminal of the memory device according to a change of the external voltage.
摘要:
A data transfer method of a storage device which includes a host bus adaptor to communicate with an external host via a first interface and to communicate internally via a second interface is provided. The data transfer method may include issuing a write command and a read command to the host bus adaptor; performing a read direct memory access operation using the first interface in response to the write command and simultaneously performing a write direct memory access operation using the second interface in response to the read command; and generating frame information structure (FIS) sequences according to the second interface in response to the issued write command and the issued read command. The first interface may perform a full duplex data transfer and the second interface may perform a half-duplex data transfer.
摘要:
Disclosed is a memory system which includes a nonvolatile memory device configured to store data information; and a memory controller configured to control the nonvolatile memory device. The memory controller provides the nonvolatile memory device with a program command sequence including program speed information according to an urgency level of an internally requested program operation.
摘要:
Provided are a storage device and a user device used by connecting to the user device. The storage device may include a nonvolatile memory and a control unit configured to control the nonvolatile memory. When write data is received from the host, the control unit outputs a first response signal including information indicating whether the write data is successfully received. When the write data is stored in the nonvolatile memory, the control unit outputs a second response signal including on whether the write data is successfully stored in the nonvolatile memory. Since the storage device does not require a program backup memory, it may be implemented in a small area.
摘要:
An auxiliary power device includes an auxiliary power source having first and second charging cells connected in series, a cell balance circuit configured to sense a charging voltage between the first and second charging cells, generate a balance voltage based on the sensed charging voltage, and applies the generated balance voltage between the first and second charging cells, and a microprocessor configured to diagnose the first and second charging cells based on the sensed charging cells and control the cell balance circuit.