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公开(公告)号：US06954387B2
公开(公告)日：2005-10-11
申请号：US10604375
申请日：2003-07-15
申请人： Hoki Kim , Toshiaki Kirihata , David R. Hanson , Gregory J. Fredeman , John Golz
发明人： Hoki Kim , Toshiaki Kirihata , David R. Hanson , Gregory J. Fredeman , John Golz
IPC分类号： G11C11/406 , G11C7/00 , G11C8/00
CPC分类号： G11C11/40618 , G11C11/406 , G11C2207/104
摘要： In a DRAM, which includes a plurality of memory banks, there is a pair of separate flag bit registers for each bank with the flag bit registers that are shifted up/down respectively. A comparator for each bank provides a comparator output. An arbiter for each bank is connected to receive a flag bit up signal and a flag bit down signal from the flag bit registers for that bank and the comparator output from the comparator for that bank. The arbiters are connected to receive a conflict in signal and to provide a conflict out signal. The pair of flag bit registers represent a refresh status of each bank and designate memory banks or arrays that are ready for a refresh operation.
摘要翻译： 在包括多个存储体的DRAM中，对于每个存储体，存在分别向上/向下移位的标志位寄存器的一对分离的标志位寄存器。 每个组的比较器提供一个比较器输出。 每个存储体的仲裁器被连接以从该存储体的标志位寄存器和对于该存储体的比较器输出的比较器输出标志位向上信号和标志位降低信号。 仲裁器被连接以接收信号中的冲突并提供冲突信号。 一对标志位寄存器表示每个存储体的刷新状态，并指定准备进行刷新操作的存储体或阵列。
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2.发明申请公开(公告)号：US20050013185A1
公开(公告)日：2005-01-20
申请号：US10604375
申请日：2003-07-15
申请人： Hoki Kim , Toshiaki Kirihata , David Hanson , Gregory Fredeman , John Golz
发明人： Hoki Kim , Toshiaki Kirihata , David Hanson , Gregory Fredeman , John Golz
IPC分类号： G11C11/406 , G11C7/00
CPC分类号： G11C11/40618 , G11C11/406 , G11C2207/104
摘要： In a DRAM, which includes a plurality of memory banks, there is a pair of separate flag bit registers for each bank with the flag bit registers that are shifted up/down respectively. A comparator for each bank provides a comparator output. An arbiter for each bank is connected to receive a flag bit up signal and a flag bit down signal from the flag bit registers for that bank and the comparator output from the comparator for that bank. The arbiters are connected to receive a conflict in signal and to provide a conflict out signal. The pair of flag bit registers represent a refresh status of each bank and designate memory banks or arrays that are ready for a refresh operation.
摘要翻译： 在包括多个存储体的DRAM中，对于每个存储体，存在分别向上/向下移位的标志位寄存器的一对分离的标志位寄存器。 每个组的比较器提供一个比较器输出。 每个存储体的仲裁器被连接以从该存储体的标志位寄存器和对于该存储体的比较器输出的比较器输出标志位向上信号和标志位降低信号。 仲裁器被连接以接收信号中的冲突并提供冲突信号。 一对标志位寄存器表示每个存储体的刷新状态，并指定准备进行刷新操作的存储体或阵列。
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公开(公告)号：US07774660B2
公开(公告)日：2010-08-10
申请号：US12131307
申请日：2008-06-02
IPC分类号： G11C29/00
CPC分类号： G11C29/808
摘要： A row redundancy system is provided for replacing faulty wordlines of a memory array having a plurality of banks. The row redundancy system includes a remote fuse bay storing at least one faulty address corresponding to a faulty wordline of the memory array; a row fuse array for storing row fuse information corresponding to at least one bank of the memory array; and a copy logic module for copying at least one faulty address stored in the remote fuse bay into the row fuse array; wherein the copy logic module is programmed to copy the at least one faulty address into the row fuse information stored in the row fuse array corresponding to a predetermined number of banks in accordance with a selectable repair field size.
摘要翻译： 提供了一种用于替换具有多个存储体的存储器阵列的有缺陷的字线的行冗余系统。 行冗余系统包括存储与存储器阵列的故障字线相对应的至少一个故障地址的远程熔丝架; 用于存储对应于所述存储器阵列的至少一个组的行熔丝信息的行熔丝阵列; 以及复制逻辑模块，用于将存储在所述远程保险丝盒中的至少一个故障地址复制到所述行保险丝阵列中; 其中所述复制逻辑模块被编程为根据可选择的修复字段大小将所述至少一个故障地址复制到对应于预定数量的存储体的行熔丝阵列中的行熔丝信息。
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公开(公告)号：US07194670B2
公开(公告)日：2007-03-20
申请号：US10708184
申请日：2004-02-13
申请人： Jonathan R. Fales , Gregory J. Fredeman , Kevin W. Gorman , Mark D. Jacunski , Toshiaki Kirihata , Alan D. Norris , Paul C. Parries , Matthew R. Wordeman
发明人： Jonathan R. Fales , Gregory J. Fredeman , Kevin W. Gorman , Mark D. Jacunski , Toshiaki Kirihata , Alan D. Norris , Paul C. Parries , Matthew R. Wordeman
IPC分类号： G01R31/28
CPC分类号： G11C29/16 , G11C29/12015 , G11C29/14 , G11C2029/0401
摘要： Disclosed is a flexible command multiplication scheme for the built-in-self test (BIST) of a high-speed embedded memory array that segments BIST functionality into remote lower-speed executable instructions and local higher-speed executable instructions. A stand-alone BIST logic controller operates at a lower frequency and communicates with a command multiplier using a low-speed BIST instruction seed set. The command multiplier uses offset or directive registers to drive a logic unit or ALU to generate “n” sets of CAD information which are then time-multiplexed to the embedded memory at a speed “n” times faster than the BIST operating speed.
摘要翻译： 公开了用于高速嵌入式存储器阵列的内置自检（BIST）的灵活的命令乘法方案，其将BIST功能分段成远程低速可执行指令和本地较高速可执行指令。 独立的BIST逻辑控制器以较低的频率工作，并与使用低速BIST指令种子集的命令乘法器进行通信。 命令乘法器使用偏移或指令寄存器来驱动逻辑单元或ALU以产生“n”组CAD信息，然后以比BIST操作速度快n倍的速度将时间复用到嵌入式存储器。
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公开(公告)号：US07404113B2
公开(公告)日：2008-07-22
申请号：US11031138
申请日：2005-01-07
IPC分类号： G11C29/00
CPC分类号： G11C29/808
摘要： A row redundancy system is provided for replacing faulty wordlines of a memory array having a plurality of banks. The row redundancy system includes a remote fuse bay storing at least one faulty address corresponding to a faulty wordline of the memory array; a row fuse array for storing row fuse information corresponding to at least one bank of the memory array; and a copy logic module for copying at least one faulty address stored in the remote fuse bay into the row fuse array; the copy logic module is programmed to copy the at least one faulty address into the row fuse information stored in the row fuse array corresponding to a predetermined number of banks in accordance with a selectable repair field size.
摘要翻译： 提供了一种用于替换具有多个存储体的存储器阵列的有缺陷的字线的行冗余系统。 行冗余系统包括存储与存储器阵列的故障字线相对应的至少一个故障地址的远程熔丝架; 用于存储对应于所述存储器阵列的至少一个组的行熔丝信息的行熔丝阵列; 以及复制逻辑模块，用于将存储在所述远程保险丝盒中的至少一个故障地址复制到所述行保险丝阵列中; 复制逻辑模块被编程为根据可选择的修复字段大小将至少一个故障地址复制到存储在对应于预定数量的存储体的行熔丝阵列中的行熔丝信息中。
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6.发明授权Method and structure for enabling a redundancy allocation during a multi-bank operation 失效在多行操作期间实现冗余分配的方法和结构公开(公告)号：US07085180B2
公开(公告)日：2006-08-01
申请号：US10777596
申请日：2004-02-12
CPC分类号： G11C29/4401 , G11C29/40 , G11C29/44 , G11C29/808 , G11C2029/0401 , G11C2029/2602
摘要： A method for allocating redundancies during a multi-bank operation in a memory device which includes two or more redundancy domains is described. The method includes steps of enabling a pass/fail bit detection to activate a given bank. The pass/fail bit detection is prompted only for a selected domain and is disabled when it addresses other domains. By altering the domain selection, it is possible to enable a redundancy allocation for any domain regardless of the multi-bank operation. The method may preferably be realized by using a dynamic exclusive-OR logic with true and complement expected data pairs. When combined with simple pointer logic, the selection of domains may be generated internally, simplifying the built in self-test and other test control protocols, while at the same time tracking those that fail.
摘要翻译： 描述了在包括两个或更多个冗余域的存储器设备中在多存储体操作期间分配冗余的方法。 该方法包括启用通过/故障位检测来激活给定的存储体的步骤。 通过/失败位检测仅对选定的域提示，并且在寻址其他域时被禁用。 通过改变域选择，无论多行操作如何，都可以为任何域启用冗余分配。 该方法可以优选地通过使用具有真实和补充预期数据对的动态异或逻辑来实现。 当结合简单的指针逻辑时，可以内部生成域的选择，简化内置的自检和其他测试控制协议，同时跟踪失败的那些。
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7.发明授权Design structure for improving sensing margin of electrically programmable fuses 有权用于提高电可编程保险丝感应裕度的设计结构公开(公告)号：US07609577B2
公开(公告)日：2009-10-27
申请号：US11872273
申请日：2007-10-15
IPC分类号： G11C7/06
CPC分类号： G11C7/065 , G11C17/165 , G11C17/18 , G11C29/027
摘要： A design structure embodied in a machine readable medium used in a design process includes an apparatus for sensing the state of a programmable resistive memory element device, the apparatus further including a latch device coupled to a fuse node and a reference node, the fuse node included within a fuse leg and the reference node configured within a reference resistance leg, the latch device configured to detect a differential signal developed between the reference node and the fuse node as the result of sense current passed through the fuse leg and the reference resistance leg; and the fuse and reference resistance legs further configured for first and second sensing modes, wherein the second sensing mode utilizes a different level of current than the first sensing mode.
摘要翻译： 在设计过程中使用的机器可读介质中体现的设计结构包括用于感测可编程电阻性存储元件装置的状态的装置，该装置还包括耦合到熔丝节点和参考节点的锁存装置，所述熔丝节点包括 所述锁存装置被配置为检测在所述参考节点和所述熔丝节点之间产生的差动信号，这是由于感测电流通过所述保险丝腿和所述参考电阻腿的结果; 并且熔丝和参考电阻腿进一步配置用于第一和第二感测模式，其中第二感测模式利用与第一感测模式不同的电流电平。
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公开(公告)号：US07525831B2
公开(公告)日：2009-04-28
申请号：US11868046
申请日：2007-10-05
IPC分类号： G11C11/00
CPC分类号： G11C7/065 , G11C17/165 , G11C17/18 , G11C29/027
摘要： A method for determining the state of a programmable resistive memory element includes passing a first level of current through a fuse leg and a reference resistance leg of a test circuit including the programmable resistive memory element; detecting a differential signal developed between a reference node and a fuse node of the test circuit as a result of the first level of current; passing a second level of current through the fuse leg and the reference leg of a test circuit, the second level of current being higher than the first level of current so as to enable detection of trip resistance of the test circuit at a lower value than with respect to the first level of current; and detecting a differential signal developed between the reference node and the fuse node of the test circuit as a result of the second level of current.
摘要翻译： 用于确定可编程电阻性存储元件的状态的方法包括使第一电平电流通过包括可编程电阻存储器元件的测试电路的熔丝支脚和参考电阻支路; 检测作为第一电流电平的结果，在测试电路的参考节点和熔丝节点之间产生的差分信号; 使第二电流通过保险丝支脚和测试电路的参考支路，第二电平电流高于第一电流电平，以便能够以比与第一电平相比更低的值检测测试电路的跳闸电阻 尊重目前的一级; 以及作为所述第二电流电平的结果，检测在所述参考节点和所述测试电路的所述熔丝节点之间产生的差分信号。
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公开(公告)号：US07817455B2
公开(公告)日：2010-10-19
申请号：US12065202
申请日：2006-08-30
IPC分类号： G11C17/00
CPC分类号： G11C17/16 , G11C17/165 , G11C29/027
摘要： A one-time-programmable-read-only-memory (OTPROM) is implemented in a two-dimensional array of aggressively scaled suicide migratable e-fuses. Word line selection is performed by decoding logic operating at VDD while the bit line drive is switched between VDD and a higher voltage, Vp, for programming. The OTPROM is thus compatible with and can be integrated with other technologies without a cost adder and supports optimization of the high current path for minimal voltage drop during fuse programming. A differential sense amplifier with a programmable reference is used for improved sense margins and can support an entire bit line rather than sense amplifiers being provided for individual fuses.
摘要翻译： 一次性可编程只读存储器（OTPROM）在二维阵列中实现，这些阵列具有大规模的自杀可迁移电子保险丝。 通过在VDD处工作的解码逻辑执行字线选择，同时位线驱动器在VDD和较高电压Vp之间切换，用于编程。 因此，OTPROM与其他技术兼容，并且可以与其他技术集成，而无需使用成本加法器，并支持在熔丝编程期间最小化电压降的高电流路径的优化。 具有可编程参考的差分读出放大器用于改进的检测余量，并且可以支持整个位线，而不是为各个保险丝提供感测放大器。
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公开(公告)号：US20080316789A1
公开(公告)日：2008-12-25
申请号：US12065202
申请日：2006-08-30
CPC分类号： G11C17/16 , G11C17/165 , G11C29/027
摘要： A one-time-programmable-read-only-memory (OTPROM) is implemented in a two-dimensional array of aggressively scaled suicide migratable e-fuses. Word line selection is performed by decoding logic operating at VDD while the bit line drive is switched between VDD and a higher voltage, Vp for programming. The OTPROM is thus compatible with and can be integrated with other technologies without a cost adder and supports optimization of the high current path for minimal voltage drop during fuse programming. A differential sense amplifier with a programmable reference is used for improved sense margins and can support an entire bit line rather than sense amplifiers being provided for individual fuses.
摘要翻译： 一次性可编程只读存储器（OTPROM）在二维阵列中实现，这些阵列具有大规模的自杀可迁移电子保险丝。 字线选择通过在VDD处工作的解码逻辑进行，而位线驱动器在VDD和较高电压Vp之间切换，用于编程。 因此，OTPROM与其他技术兼容，并且可以与其他技术集成，而无需使用成本加法器，并支持在熔丝编程期间最小化电压降的高电流路径的优化。 具有可编程参考的差分读出放大器用于改进的检测余量，并且可以支持整个位线，而不是为各个保险丝提供感测放大器。
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