摘要:
A design structure embodied in a machine readable medium used in a design process includes an apparatus for sensing the state of a programmable resistive memory element device, the apparatus further including a latch device coupled to a fuse node and a reference node, the fuse node included within a fuse leg and the reference node configured within a reference resistance leg, the latch device configured to detect a differential signal developed between the reference node and the fuse node as the result of sense current passed through the fuse leg and the reference resistance leg; and the fuse and reference resistance legs further configured for first and second sensing modes, wherein the second sensing mode utilizes a different level of current than the first sensing mode.
摘要:
A method for determining the state of a programmable resistive memory element includes passing a first level of current through a fuse leg and a reference resistance leg of a test circuit including the programmable resistive memory element; detecting a differential signal developed between a reference node and a fuse node of the test circuit as a result of the first level of current; passing a second level of current through the fuse leg and the reference leg of a test circuit, the second level of current being higher than the first level of current so as to enable detection of trip resistance of the test circuit at a lower value than with respect to the first level of current; and detecting a differential signal developed between the reference node and the fuse node of the test circuit as a result of the second level of current.
摘要:
An apparatus for sensing the state of a programmable resistive memory element device includes a latch device is coupled to a fuse node and a reference node, the fuse node included within a fuse leg and the reference node configured within a reference resistance leg. The latch device is configured to detect a differential signal developed between the reference node and the fuse node as the result of sense current passed through the fuse leg and the reference resistance leg. The fuse and reference resistance legs are further configured for first and second sensing modes, wherein the second sensing mode utilizes a different level of current than the first sensing mode.
摘要:
Error correction is selectively applied to data, such as repair data to be stored in a fusebay for BIST/BISR on an ASIC or other semiconductor device. Duplicate bit correction and error correction code state machines may be included, and selectors, such as multiplexers, may be used to enable one or both types of correction. Each state machine may include an indicator, such as a “sticky bit,” that may be activated when its type of correction is encountered. The indicator(s) may be used to develop quality and yield control criteria during manufacturing test of parts including embodiments of the invention.
摘要:
A delay circuit with a delay equal to the percentage of the input pulse width is described. In one embodiment, the ratio of the discharge current to the charge-up current of a timing capacitor is used to determine the percentage of the input pulse width used for the output delay. In a first timing phase, the input pulse width is stored as a voltage on the timing capacitor. In a second timing phase, the output is delayed by a percentage of the input pulse width. In a third timing phase, the circuit is restored to the trip point to remove sensitivity to process variation or applied conditions variation such as voltage or temperature (P-V-T variation), and be ready for the next timing cycle.
摘要:
A system and method for providing DRAM device-level repair via address remappings external to the device. A system includes a memory controller having an interface to one or more memory devices via a memory module. The memory devices include addressable redundant and non-redundant memory blocks. The memory controller also includes a mechanism for utilizing one or more redundant memory blocks in place of one or more failing non-redundant memory blocks via an address remapping external to the memory device. The remapping occurs while the system is on-line.
摘要:
The invention provides a circuit that can observe data within shift registers without altering the data. The circuit includes selectors connected to the inputs and outputs of the shift registers. The selectors selectively connect the input with the output of a selected shift register to form a wiring loop for the selected shift register. A control device connected to the wiring loop uses the wiring loop to cause the data to be continually transferred from the output of the selected shift register to the input of the selected shift register and back through the selected shift register in a circular manner. The control device includes a counter used for determining the length of a selected shift register and a set of registers to store, for future use when rotating data in the shift registers, the length of each shift register. The control device also includes a data output accessible from outside the circuit. An observation wire is connected to the wiring loop, and the data passes from the wiring loop to the control device through the observation wire. The control device outputs data appearing on the wiring loop as the data is circulated through the selected shift register to permit data within the selected shift register to be observed outside the circuit without altering the data within the selected shift register.
摘要:
Circuitry that includes a voltage controller (224) for providing a variable gate signal (220) for controlling the gate of a programming transistor (212) used in conjunction with programming an electrically programmable fuse (“eFuse”) (204) of an integrated circuit (200). The voltage controller adjusts the gate signal depending upon whether the circuitry is in an eFuse programming mode or an eFuse resistance measuring mode. The voltage controller may optionally include a voltage tuner (252) for tuning the gate signal to account for operating variations in the programming transistor caused by manufacturing variations.
摘要:
A system, method and program product for adjusting an environmental variable of a fuse blow of an electronic fuse are disclosed. A mimic NFET is coupled to a fuse blow source voltage line, a fuse blow gate voltage line, and a chip ground in the same manner as the electronic fuse, except that the mimic NFET is not attached to a poly fuse link. The on current (ion) and off current (ioff) of the mimic NFET are measured to determine a blow current of the electronic fuse. The environmental variable is adjusted based on the determined blow current.
摘要:
A method and apparatus for initializing an integrated circuit using compressed data from a remote fusebox allows a reduction in the number of fuses required to repair or customize an integrated circuit and allows fuses to be grouped outside of the macros repaired by the fuses. The remote location of fuses allows flexibility in the placement of macros having redundant repair capability, as well as a preferable grouping of fuses for both programming convenience and circuit layout facilitation. The fuses are arranged in rows and columns and represent control words and run-length compressed data to provide a greater quantity of repair points per fuse. The data can be loaded serially into shift registers and shifted to the macro locations to control the selection of redundant circuits to repair integrated circuits having defects or to customize logic.