公开(公告)号：US20130270104A1

公开(公告)日：2013-10-17

申请号：US13444100

申请日：2012-04-11

申请人： Hong Sheng Yang ,  Chi-l Lang ,  Yun Wang

发明人： Hong Sheng Yang ,  Chi-l Lang ,  Yun Wang

IPC分类号： C23C14/35

CPC分类号： C23C14/042 ,  C23C14/352 ,  C23C14/548

摘要： Embodiments of the present invention provide methods and apparatuses using sputtering from a mosaic sputtering target for depositing layers onto a substrate, and provide the capability of depositing layers onto site isolated regions of the substrate in a combinatorial manner. A sputtering source is provided including a sputtering target comprising a first region having a first composition, and a second region having a second composition. A selection mechanism is capable of selecting a composition of emitted material from the sputtering source that can range from 0% to 100% of the first composition and from 0% to 100% of the second composition. The selection mechanism can comprise a movable magnetron or a moveable aperture.

摘要翻译： 本发明的实施方案提供了使用来自马赛克溅射靶的溅射的方法和装置，用于将层沉积到衬底上，并提供以组合方式将层沉积到衬底的位置隔离区上的能力。 提供溅射源，其包括溅射靶，其包括具有第一组成的第一区域和具有第二组成的第二区域。 选择机构能够从溅射源选择发射材料的组成，该组成可以在第一组分的0％至100％和第二组合物的0％至100％的范围内。 选择机构可以包括可移动磁控管或可移动孔。

公开(公告)号：US08076240B2

公开(公告)日：2011-12-13

申请号：US12268387

申请日：2008-11-10

申请人： Anh Ngoc Duong ,  Chi-l Lang

发明人： Anh Ngoc Duong ,  Chi-l Lang

IPC分类号： H01L21/44

CPC分类号： H01L21/288 ,  H01L21/02074 ,  H01L21/7684 ,  H01L21/76849

摘要： Techniques to improve characteristics of processed semiconductor substrates are described, including cleaning a substrate using a preclean process, the substrate comprising a dielectric region and a conductive region, introducing a hydroquinone to the substrate after cleaning the substrate using the preclean operation, and forming a capping layer over the conductive region of the substrate after introducing the hydroquinone.

摘要翻译： 描述了改进处理的半导体衬底的特性的技术，包括使用预清洗工艺清洗衬底，所述衬底包括电介质区域和导电区域，在使用预清洗操作清洁衬底之后，将氢醌引入衬底，并形成封盖 在引入氢醌之后，在衬底的导电区域上方。

公开(公告)号：US08409354B2

公开(公告)日：2013-04-02

申请号：US13332813

申请日：2011-12-21

申请人： Tony P. Chiang ,  Chi-l Lang ,  Sunil Shanker

发明人： Tony P. Chiang ,  Chi-l Lang ,  Sunil Shanker

IPC分类号： C23C16/00 ,  C23C16/458

CPC分类号： C23C16/45574 ,  C23C16/45544 ,  C23C16/45548

摘要： A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

摘要翻译： 提供组合处理室和方法。 在该方法中，流体体积在衬底的表面上流动，具有不同部分的流体体积具有不同构成组分，以同时将衬底的偏析区域暴露于与构成组分的混合物中，所述构成组分与相邻区域暴露于其中的构成组分不同 。 通过多个流动产生不同处理的分离区域。

公开(公告)号：US20080185573A1

公开(公告)日：2008-08-07

申请号：US11702967

申请日：2007-02-05

申请人： Zhi-wen Sun ,  Nitin Kumar ,  Jinhong Tong ,  Chi-l Lang ,  Tony Chiang

发明人： Zhi-wen Sun ,  Nitin Kumar ,  Jinhong Tong ,  Chi-l Lang ,  Tony Chiang

IPC分类号： H01L47/00 ,  H01L21/00

CPC分类号： H01L45/04 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633

摘要： Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.