公开(公告)号：US06441412B2

公开(公告)日：2002-08-27

申请号：US09742168

申请日：2000-12-19

申请人： Hoon-Sang Oh ,  Jin-Su Han

发明人： Hoon-Sang Oh ,  Jin-Su Han

IPC分类号： H01L31062

CPC分类号： H01L27/14601

摘要： A unit pixel in a CMOS image sensor, which enhances a capacitance of a photodiode to reduce noises and increase the maximum output signal of the image sensor, is provided. To achieve this, the CMOS image sensor includes a photodiode aligned with an edge of an insulating film for separating elements and formed by doping impurities to a semiconductor layer by an ion implantation; and a capacitor formed along with interface between the photodiode and the insulating film on plan and formed by layering a bottom electrode, a dielectric and an upper electrode contacted with the photodiode.

摘要翻译： 提供CMOS图像传感器中的单位像素，其增强了光电二极管的电容以降低噪声并增加图像传感器的最大输出信号。 为了实现这一点，CMOS图像传感器包括与用于分离元件的绝缘膜的边缘对准的光电二极管，并且通过离子注入将杂质掺杂到半导体层而形成; 以及在平面上与光电二极管和绝缘膜之间的界面一起形成的电容器，并且通过分层与光电二极管接触的底部电极，电介质和上电极而形成。

公开(公告)号：US06855595B2

公开(公告)日：2005-02-15

申请号：US10326680

申请日：2002-12-20

申请人： Jin-Su Han ,  Hoon-Sang Oh

发明人： Jin-Su Han ,  Hoon-Sang Oh

IPC分类号： H01L21/8234 ,  H01L27/06 ,  H01L27/146 ,  H01L31/10 ,  H01L21/8242

CPC分类号： H01L27/14689 ,  H01L27/14601

摘要： An image sensor includes a plurality of unit pixels for sensing a light beam to generate an image data. Each of the unit pixels includes, a photoelectric element for sensing a light beam incident thereto and generating photoelectric charges, a transistor including a gate dielectric formed adjacent to the photoelectric element and a gate electrode formed on top of the gate dielectric and a capacitor structure including an insulating film formed on a portion of the photoelectric element and a bottom electrode, wherein the insulating film and the gate dielectric are made of a same material and the bottom electrode and the gate electrode are made of a same material.

摘要翻译： 图像传感器包括用于感测光束以生成图像数据的多个单位像素。 每个单位像素包括用于感测入射到其上的光束并产生光电电荷的光电元件，包括与光电元件相邻形成的栅极电介质的晶体管和形成在栅极电介质的顶部上的栅极电极和包括 形成在所述光电元件的一部分上的绝缘膜和底电极，其中所述绝缘膜和所述栅极电介质由相同的材料制成，并且所述底电极和所述栅电极由相同的材料制成。

公开(公告)号：US06521924B2

公开(公告)日：2003-02-18

申请号：US09742817

申请日：2000-12-19

申请人： Jin-Su Han ,  Hoon-Sang Oh

发明人： Jin-Su Han ,  Hoon-Sang Oh

IPC分类号： H01L31062

CPC分类号： H01L27/14689 ,  H01L27/14601

摘要： An image sensor includes a plurality of unit pixels for sensing a light beam to generate an image data. Each of the unit pixels includes, a photoelectric element for sensing a light beam incident thereto and generating photoelectric charges, a transistor including a gate dielectric formed adjacent to the photoelectric element and a gate electrode formed on top of the gate dielectric and a capacitor structure including an insulating film formed on a portion of the photoelectric element and a bottom electrode, wherein the insulating film and the gate dielectric are made of a same material and the bottom electrode and the gate electrode are made of a same material.

公开(公告)号：US06545302B2

公开(公告)日：2003-04-08

申请号：US09812212

申请日：2001-03-19

申请人： Jin-Su Han

发明人： Jin-Su Han

IPC分类号： H01L27148

CPC分类号： H01L27/14632 ,  H01L27/1463 ,  H01L27/14689 ,  H01L27/14692

摘要： An image sensor capable of preventing the degradation of pinned photodiodes and the generation of leakage current between neighboring pinned photodiodes is provided. The disclosed image sensor contains a plurality of pixel units, each pixel unit having a photodiode region. The image sensor includes a semiconductor substrate of a first conductivity type; a device isolation layer formed in the semiconductor substrate; a field stop layer formed beneath the device isolation layer; a trench formed in the semiconductor substrate, wherein the trench surrounds the photodiode region; a first doping region of the first conductivity type formed beneath the surface of the semiconductor substrate and beneath the surfaces of the trench; an insulating member filling the trench; and a second doping region of a second conductivity type formed in the semiconductor substrate under the first doping region.

公开(公告)号：US07880196B2

公开(公告)日：2011-02-01

申请号：US12344540

申请日：2008-12-28

申请人： Hee-Sung Shim ,  Seoung-Hyun Kim ,  Joon Hwang ,  Kwang-Soo Kim ,  Jin-Su Han

发明人： Hee-Sung Shim ,  Seoung-Hyun Kim ,  Joon Hwang ,  Kwang-Soo Kim ,  Jin-Su Han

IPC分类号： H01L31/0328

CPC分类号： H01L27/1469 ,  H01L27/14634 ,  H01L27/14665

摘要： Embodiments relate to an image sensor and a method of forming an image sensor. According to embodiments, an image sensor may include a first substrate and a photodiode. A circuitry including a metal interconnection may be formed on and/or over the first substrate. The photodiode may be formed over a first substrate, and may contact the metal interconnection. The circuitry of the first substrate may include a first transistor, a second transistor, an electrical junction region, and a first conduction type region. The first and second transistors may be formed over the first substrate. According to embodiments, an electrical junction region may be formed between the first transistor and the second transistor. The first conduction type region may be formed at one side of the second transistor, and may be connected to the metal interconnection.

摘要翻译： 实施例涉及图像传感器和形成图像传感器的方法。 根据实施例，图像传感器可以包括第一基板和光电二极管。 包括金属互连的电路可以形成在第一基板上和/或上方。 光电二极管可以形成在第一基板上，并且可以接触金属互连。 第一衬底的电路可以包括第一晶体管，第二晶体管，电结区域和第一导电类型区域。 第一和第二晶体管可以形成在第一衬底上。 根据实施例，可以在第一晶体管和第二晶体管之间形成电连接区域。 第一导电类型区域可以形成在第二晶体管的一侧，并且可以连接到金属互连。

公开(公告)号：US20090179293A1

公开(公告)日：2009-07-16

申请号：US12344536

申请日：2008-12-28

申请人： Hee-Sung Shim ,  Seoung-Hyun Kim ,  Joon Hwang ,  Kwang-Soo Kim ,  Jin-Su Han

发明人： Hee-Sung Shim ,  Seoung-Hyun Kim ,  Joon Hwang ,  Kwang-Soo Kim ,  Jin-Su Han

IPC分类号： H01L31/105 ,  H01L31/103 ,  H01L21/768

CPC分类号： H01L27/14692 ,  H01L27/14609 ,  H01L27/14634 ,  H01L27/1465

摘要： Embodiments relate to an image sensor. According to embodiments, an image sensor may include a circuitry, a first substrate, a photodiode, a metal interconnection, and an electrical junction region. The circuitry and the metal interconnection may be formed on and/or over the first substrate. The photodiode may contact the metal interconnection and may be formed on and/or over the first substrate. The circuitry may include an electrical junction region on and/or over the first substrate and a first conduction type region on and/or over the electrical junction region and connected to the metal interconnection. According to embodiments, an image sensor and a manufacturing method thereof may provide a vertical integration of circuitry and a photodiode.

摘要翻译： 实施例涉及图像传感器。 根据实施例，图像传感器可以包括电路，第一衬底，光电二极管，金属互连和电连接区域。 电路和金属互连可以形成在第一基板上和/或上方。 光电二极管可以接触金属互连并且可以形成在第一基板上和/或上方。 电路可以包括在第一基板上和/或上方的电连接区域，以及在电连接区域上和/或上方的第一导电类型区域并且连接到金属互连。 根据实施例，图像传感器及其制造方法可以提供电路和光电二极管的垂直集成。

公开(公告)号：US20090166792A1

公开(公告)日：2009-07-02

申请号：US12344540

申请日：2008-12-28

申请人： Hee-Sung Shim ,  Seoung-Hyun Kim ,  Joon Hwang ,  Kwang-Soo Kim ,  Jin-Su Han

发明人： Hee-Sung Shim ,  Seoung-Hyun Kim ,  Joon Hwang ,  Kwang-Soo Kim ,  Jin-Su Han

IPC分类号： H01L27/146 ,  H01L21/329

CPC分类号： H01L27/1469 ,  H01L27/14634 ,  H01L27/14665

摘要： Embodiments relate to an image sensor and a method of forming an image sensor. According to embodiments, an image sensor may include a first substrate and a photodiode. A circuitry including a metal interconnection may be formed on and/or over the first substrate. The photodiode may be formed over a first substrate, and may contact the metal interconnection. The circuitry of the first substrate may include a first transistor, a second transistor, an electrical junction region, and a first conduction type region. The first and second transistors may be formed over the first substrate. According to embodiments, an electrical junction region may be formed between the first transistor and the second transistor. The first conduction type region may be formed at one side of the second transistor, and may be connected to the metal interconnection.

摘要翻译： 实施例涉及图像传感器和形成图像传感器的方法。 根据实施例，图像传感器可以包括第一基板和光电二极管。 包括金属互连的电路可以形成在第一基板上和/或上方。 光电二极管可以形成在第一基板上，并且可以接触金属互连。 第一衬底的电路可以包括第一晶体管，第二晶体管，电结区域和第一导电类型区域。 第一和第二晶体管可以形成在第一衬底上。 根据实施例，可以在第一晶体管和第二晶体管之间形成电连接区域。 第一导电类型区域可以形成在第二晶体管的一侧，并且可以连接到金属互连。