公开(公告)号：US4176170A

公开(公告)日：1979-11-27

申请号：US924188

申请日：1978-07-13

申请人： Horst M. Kasper ,  Benjamin Tell ,  Sigurd Wagner

发明人： Horst M. Kasper ,  Benjamin Tell ,  Sigurd Wagner

IPC分类号： C01B17/00 ,  C01B19/00 ,  H01M4/02 ,  H01M6/18

CPC分类号： C01B17/00 ,  C01B19/002 ,  H01M4/02 ,  H01M6/18 ,  C01P2006/40

摘要： Ionic conductivity in ternary chalcogenides of the form AB.sub.x C.sub.y, where A is a metallic atom with atomic number no greater than 55 which has a +1 oxidation state, B is a group III A metallic atom and C is a group VI A atom, has been observed. This ionic conductivity makes the compounds useful as components in electrochemical cells, e.g., electrolytes and electrodes.

摘要翻译： ABxCy形式的三元硫属化物中的离子电导率，其中A是具有+1氧化态的原子序数不大于55的金属原子，B是IIIA族金属原子，C是VIA原子， 观察到的。 该离子导电性使得化合物可用作电化学电池中的组分，例如电解质和电极。

公开(公告)号：US4115633A

公开(公告)日：1978-09-19

申请号：US783649

申请日：1977-04-01

申请人： Horst Manfred Kasper ,  Benjamin Tell ,  Sigurd Wagner

发明人： Horst Manfred Kasper ,  Benjamin Tell ,  Sigurd Wagner

IPC分类号： H01M4/02 ,  H01M6/18

CPC分类号： H01M4/02 ,  H01M6/18 ,  C01P2006/40

摘要： Ionic conductivity in ternary chalcogenides of the form AB.sub.x C.sub.y, where A is a metallic atom with atomic number no greater than 55 which has a +1 oxidation state, B is a group III A metallic atom and C is a group VI A atom, has been observed. This ionic conductivity makes the compounds useful as components in electrochemical cells, e.g., electrolytes and electrodes.

摘要翻译： ABxCy形式的三元硫属化物中的离子电导率，其中A是具有+1氧化态的原子序数不大于55的金属原子，B是IIIA族金属原子，C是VIA原子， 观察到的。 该离子导电性使得化合物可用作电化学电池中的组分，例如电解质和电极。

公开(公告)号：US4298250A

公开(公告)日：1981-11-03

申请号：US956391

申请日：1978-10-31

申请人： Gary D. Boyd ,  Sarat K. Mohapatra ,  Benjamin Tell ,  Sigurd Wagner ,  Fred Wudl

发明人： Gary D. Boyd ,  Sarat K. Mohapatra ,  Benjamin Tell ,  Sigurd Wagner ,  Fred Wudl

IPC分类号： G02F1/15 ,  G02F1/17 ,  G02F1/23

CPC分类号： G02F1/1523

摘要： Solid state electrochromic devices are fabricated using, as the electrochromic material, ionic conductors such as heteropoly acids. The properties of the ionic conductors permit construction of a device having only two electrodes and the electrochromic material. In operation, low voltages impressed between the electrodes induce a color change. For example, when phosphotungstic acid is employed, the color change is from white to dark blue. Cycle times as low as 100 msec are achievable and the devices exhibit memory properties.

摘要翻译： 使用诸如杂多酸的离子导体作为电致变色材料制造固态电致变色器件。 离子导体的性质允许构造仅具有两个电极和电致变色材料的装置。 在操作中，在电极之间施加的低电压引起颜色变化。 例如，当使用磷钨酸时，颜色变化是从白色到深蓝色。 可实现低至100毫秒的循环时间，并且器件具有记忆特性。

公开(公告)号：US5115442A

公开(公告)日：1992-05-19

申请号：US509653

申请日：1990-04-13

申请人： Yong H. Lee ,  Benjamin Tell

发明人： Yong H. Lee ,  Benjamin Tell

IPC分类号： H01S5/00 ,  H01L33/00 ,  H01S5/183

CPC分类号： H01S5/18308 ,  H01L33/0062 ,  H01S5/2063

摘要： Top surface emitting, vertical cavity, surface emitting lasers depend upon emission through apertured top surface electrodes. Biasing current, accordingly peripheral to the laser as introduced, follows a path which comes to confluence within the active gain region to effectively attain lasing threshold. The path is consequence of a buried region of increased resistance which encircles the laser at or above the active region. The buried region is produced by ion implantation-induced damage with ion energy magnitude and spectrum chosen to produce an appropriate resistance gradient. Integrated, as well as discrete, lasers are contemplated.

公开(公告)号：US4374867A

公开(公告)日：1983-02-22

申请号：US318803

申请日：1981-11-06

申请人： Robert E. Nahory ,  Benjamin Tell

发明人： Robert E. Nahory ,  Benjamin Tell

IPC分类号： C23C8/36 ,  H01L21/316 ,  B05D3/14 ,  B05D5/12 ,  B05D7/24

CPC分类号： C23C8/36 ,  H01L21/31654

摘要： A method of growing a water insoluble native plasma oxide on an In.sub.0.53 Ga.sub.0.47 As layer of the type that is useful in the fabrication of MOS type devices is disclosed. Oxygen is bubbled through a water chamber in order to introduce water vapor into the growth chamber during the growing process. The InGaAs layer is first sputter etched in the oxygen plasma while a negative potential is applied to the semiconductor structure. The pressure is then increased and the oxides are grown while a positive potential is applied to the semiconductor structure.

摘要翻译： 公开了一种在可用于制造MOS型器件的In0.53Ga0.47As层上生长水不溶性天然等离子体氧化物的方法。 氧气通过水室鼓泡，以便在生长过程中将水蒸汽引入生长室。 首先在氧等离子体中溅射铟镓砷层，同时向半导体结构施加负电位。 然后增加压力，并且在向半导体结构施加正电位的同时生长氧化物。

公开(公告)号：US5436756A

公开(公告)日：1995-07-25

申请号：US954201

申请日：1992-09-30

申请人： Wayne H. Knox ,  Jason B. Stark ,  Benjamin Tell ,  Ted K. Woodward

发明人： Wayne H. Knox ,  Jason B. Stark ,  Benjamin Tell ,  Ted K. Woodward

IPC分类号： G02F1/017 ,  G02F1/03

CPC分类号： B82Y20/00 ,  G02F1/017

摘要： Photocurrent suppression is achieved without deleteriously affecting modulation performance in a surface normal, electro-absorption, quantum well modulator by introducing a sufficient number of non-radiative recombination centers in the quantum well region of the modulator. The presence of the non-radiative recombination centers significantly shortens the lifetime of photogenerated carriers and, thereby, suppresses the photocurrent. Modulation performance characteristics such as contrast ratio are maintained at acceptable levels even though exciton broadening occurs in the quantum wells. The present modulator exhibits a careful balance between defect density in the quantum wells and the acceptable degree of exciton broadening necessary to preserve quantum effects.

摘要翻译： 通过在调制器的量子阱区域中引入足够数量的非辐射复合中心，实现光电流抑制，而不会有害地影响表面法线电吸收量子阱调制器中的调制性能。 非辐射复合中心的存在显着缩短了光生载流子的寿命，从而抑制了光电流。 即使在量子阱中发生激子扩展，调制性能特性如对比度也保持在可接受的水平。 本调制器在量子阱中的缺陷密度和保持量子效应所必需的可接受的激子扩展程度之间表现出谨慎的平衡。