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    Image sensor with backside passivation and metal layer
    2.
    发明授权
    Image sensor with backside passivation and metal layer 有权
    具有背面钝化和金属层的图像传感器

    公开(公告)号：US08232133B2

    公开(公告)日：2012-07-31

    申请号：US13191042

    申请日：2011-07-26

    申请人： Howard E. Rhodes ,  Hidetoshi Nozaki

    发明人： Howard E. Rhodes ,  Hidetoshi Nozaki

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14629 ,  H01L27/14609 ,  H01L27/14621 ,  H01L31/02327

    摘要： An image sensor includes a semiconductor layer that filters light of different wavelengths. For example, the semiconductor layer absorbs photons of shorter wavelengths and passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed near a front side of the semiconductor layer. A dopant layer is formed below the photodiode near a back side of the semiconductor layer. A mirror that primarily reflects photons of longer visible wavelengths is disposed on the back side of the semiconductor layer.

    摘要翻译： 图像传感器包括对不同波长的光进行滤光的半导体层。 例如，半导体层吸收较短波长的光子并且传递较长波长的更多光子，使得较长波长的光子经常通过而不被吸收。 具有光电二极管的成像像素形成在半导体层的正面附近。 在半导体层的背面附近的光电二极管附近形成掺杂剂层。 主要反射更长可见波长的光子的反射镜设置在半导体层的背面。

    IMAGE SENSOR WITH BACKSIDE PASSIVATION AND METAL LAYER
    4.
    发明申请
    IMAGE SENSOR WITH BACKSIDE PASSIVATION AND METAL LAYER 有权
    具有背面钝化和金属层的图像传感器

    公开(公告)号：US20110278436A1

    公开(公告)日：2011-11-17

    申请号：US13191042

    申请日：2011-07-26

    申请人： Howard E. Rhodes ,  Hidetoshi Nozaki

    发明人： Howard E. Rhodes ,  Hidetoshi Nozaki

    IPC分类号： H01L27/146 ,  B82Y20/00

    CPC分类号： H01L27/14629 ,  H01L27/14609 ,  H01L27/14621 ,  H01L31/02327

    摘要： An image sensor includes a semiconductor layer that filters light of different wavelengths. For example, the semiconductor layer absorbs photons of shorter wavelengths and passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed near a front side of the semiconductor layer. A dopant layer is formed below the photodiode near a back side of the semiconductor layer. A mirror that primarily reflects photons of longer visible wavelengths is disposed on the back side of the semiconductor layer.

    摘要翻译： 图像传感器包括对不同波长的光进行滤光的半导体层。 例如，半导体层吸收较短波长的光子并且传递较长波长的更多光子，使得较长波长的光子经常通过而不被吸收。 具有光电二极管的成像像素形成在半导体层的正面附近。 在半导体层的背面附近的光电二极管附近形成掺杂剂层。 主要反射更长可见波长的光子的反射镜设置在半导体层的背面。

    IMAGE SENSOR WITH BACKSIDE PASSIVATION AND METAL LAYER
    5.
    发明申请
    IMAGE SENSOR WITH BACKSIDE PASSIVATION AND METAL LAYER 有权
    具有背面钝化和金属层的图像传感器

    公开(公告)号：US20090294811A1

    公开(公告)日：2009-12-03

    申请号：US12129599

    申请日：2008-05-29

    申请人： Howard E. Rhodes ,  Hidetoshi Nozaki

    发明人： Howard E. Rhodes ,  Hidetoshi Nozaki

    IPC分类号： H01L31/112

    CPC分类号： H01L27/14629 ,  H01L27/14609 ,  H01L27/14621 ,  H01L31/02327

    摘要： An image sensor includes a semiconductor layer that low-pass filters light of different wavelengths. For example, the semiconductor layer proportionately absorbs photons of shorter wavelengths and proportionately passes more photons of longer wavelengths such that the longer wavelength photons often pass through without being absorbed. An imaging pixel having a photodiode is formed on a front surface of the semiconductor layer, where the photodiode is an N− region formed within the P-type region of the semiconductor layer. A P+ layer is formed between the N− region of the photodiode and a back surface of the semiconductor layer. A mirror that primarily reflects photons of red and/or infra-red wavelengths is formed on the back surface of the semiconductor layer.

    摘要翻译： 图像传感器包括低通滤波不同波长的光的半导体层。 例如，半导体层成比例地吸收较短波长的光子并且成比例地传递较长波长的更多光子，使得较长波长的光子经常通过而不被吸收。 具有光电二极管的成像像素形成在半导体层的前表面上，其中光电二极管是形成在半导体层的P型区域内的N-区域。 在光电二极管的N区和半导体层的背面之间形成P +层。 在半导体层的后表面上形成主要反射红色和/或红外波长的光子的反射镜。

    IMAGE SENSOR REFLECTOR
    6.
    发明申请
    IMAGE SENSOR REFLECTOR 有权
    图像传感器反射器

    公开(公告)号：US20090194671A1

    公开(公告)日：2009-08-06

    申请号：US12023797

    申请日：2008-01-31

    申请人： Hidetoshi Nozaki ,  Howard E. Rhodes

    发明人： Hidetoshi Nozaki ,  Howard E. Rhodes

    IPC分类号： H01L31/0232 ,  H01L21/02

    CPC分类号： H01L27/14625 ,  H01L27/14685

    摘要： An array of pixels is formed using a substrate, where each pixel has a substrate having an incident side for receiving incident light, a photosensitive region formed in the substrate, and a reflector having a complex-shaped surface. The reflector is formed in a portion of the substrate that is opposed to the incident side such that light incident on the complex-shaped surface of the reflector is reflected towards the photosensitive region.

    摘要翻译： 使用基板形成像素阵列，其中每个像素具有用于接收入射光的入射侧的基板，形成在基板中的感光区域和具有复杂形状表面的反射器。 反射器形成在与入射侧相对的基板的一部分中，使得入射在反射器的复合形状表面上的光被反射到感光区域。

    Image sensor pixel having a lateral doping profile formed with indium doping
    8.
    发明授权
    Image sensor pixel having a lateral doping profile formed with indium doping 有权
    具有由铟掺杂形成的横向掺杂分布的图像传感器像素

    公开(公告)号：US07666703B2

    公开(公告)日：2010-02-23

    申请号：US11036647

    申请日：2005-01-14

    申请人： Howard E. Rhodes ,  Hidetoshi Nozaki

    发明人： Howard E. Rhodes ,  Hidetoshi Nozaki

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14643 ,  H01L31/0288

    摘要： An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant.

    摘要翻译： 使用具有掺杂有铟的多晶硅栅极的传输栅极的有源像素。 像素包括形成在半导体衬底中的感光元件和形成在半导体衬底中的n型浮动节点。 在浮动节点和感光元件之间形成具有传输门的n沟道传输晶体管。 像素衬底具有掺杂有铟掺杂剂的横向掺杂梯度。

    Circuit and photo sensor overlap for backside illumination image sensor
    10.
    发明授权
    Circuit and photo sensor overlap for backside illumination image sensor 有权
    背面照明图像传感器的电路和光电传感器重叠

    公开(公告)号：US08228411B2

    公开(公告)日：2012-07-24

    申请号：US13327592

    申请日：2011-12-15

    申请人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

    发明人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

    IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L31/062

    CPC分类号： H01L27/14603 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

    摘要： A method of operation of a backside illuminated (BSI) pixel array includes acquiring an image signal with a first photosensitive region of a first pixel within the BSI pixel array. The image signal is generated in response to light incident upon a backside of the first pixel. The image signal acquired by the first photosensitive region is transferred to pixel circuitry of the first pixel disposed on a frontside of the first pixel opposite the backside. The pixel circuitry at least partially overlaps the first photosensitive region of the first pixel and extends over die real estate above a second photosensitive region of a second pixel adjacent to the first pixel such that the second pixel donates die real estate unused by the second pixel to the first pixel to accommodate larger pixel circuitry than would fit within the first pixel.

    摘要翻译： 背面照明（BSI）像素阵列的操作方法包括用BSI像素阵列内的第一像素的第一感光区域获取图像信号。 响应于入射在第一像素的背面的光产生图像信号。 由第一感光区域获取的图像信号被传送到设置在与背面相对的第一像素的前侧上的第一像素的像素电路。 像素电路至少部分地与第一像素的第一光敏区域重叠，并且延伸超过与第一像素相邻的第二像素的第二光敏区域上方的裸片空间，使得第二像素将第二像素未使用的裸片空间提供给 第一像素以适应比装配在第一像素内的更大的像素电路。