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1.发明授权Electrochromic-photovoltaic film for light-sensitive control of optical transmittance 失效电致变色光伏膜用于光敏感控制光透射率
公开(公告)号：US5377037A
公开(公告)日：1994-12-27
申请号：US973171
申请日：1992-11-06
CPC分类号： G02F1/163 , G02C7/101 , G02F1/1354 , G02F1/155 , G02F2001/13324
摘要： A variable transmittance optical component includes an electrochromic material and a photovoltaic device-type thin film solar cell deposited in a tandem type, monolithic single coating over the component. A bleed resistor of a predetermined value is connected in series across the electrochromic material and photovoltaic device controlling the activation and deactivation of the electrochromic material. The electrical conductivity between the electrochromic material and the photovoltaic device is enhanced by interposing a transparent electrically conductive layer.
摘要翻译： 可变透射率光学部件包括电致变色材料和沉积在组件上的串联型单块单一涂层中的光伏器件型薄膜太阳能电池。 预定值的放电电阻串联连接在控制电致变色材料的激活和失活的电致变色材料和光伏器件上。 通过插入透明导电层来增强电致变色材料和光电器件之间的电导率。
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公开(公告)号：US5384653A
公开(公告)日：1995-01-24
申请号：US972242
申请日：1992-11-06
CPC分类号： E06B3/6722 , G02F1/153
摘要： A variable transmittance double pane window includes an electrochromic material that has been deposited on one pane of the window in conjunction with an array of photovoltaic cells deposited along an edge of the pane to produce the required electric power necessary to vary the effective transmittance of the window. A battery is placed in a parallel fashion to the array of photovoltaic cells to allow the user the ability to manually override the system when a desired transmittance is desired.
摘要翻译： 可变透光率双窗格窗口包括已经沉积在窗口的一个窗格上的电致变色材料以及沿着窗格的边缘沉积的光伏电池的阵列，以产生改变窗口的有效透射率所需的所需电力 。 电池以与光伏电池阵列平行的方式放置，以允许使用者在需要期望的透射率时手动覆盖系统的能力。
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公开(公告)号：US4319187A
公开(公告)日：1982-03-09
申请号：US133253
申请日：1980-03-24
申请人： Richard S. Crandall
发明人： Richard S. Crandall
CPC分类号： G01R31/2831 , Y10S136/29
摘要： A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorous. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells.
摘要翻译： 用于测量半导体中多数载流子的漂移迁移率的方法包括在正向偏置脉冲终止之后测量肖特基势垒器件中的电流瞬变。 使用掺杂有0.2％磷的非晶硅氢化材料给出了一个实例。 该方法对于其中介电弛豫时间短于载流子传输时间的材料是特别有用的。 在太阳能电池中有用的材料特别有用。
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4.发明授权Reversible optical storage medium and a method for recording information therein 失效可逆光存储介质及其中记录信息的方法
公开(公告)号：US4320489A
公开(公告)日：1982-03-16
申请号：US126706
申请日：1980-03-03
申请人： Richard S. Crandall , Allen Bloom
发明人： Richard S. Crandall , Allen Bloom
CPC分类号： G11B7/246 , B41M5/363 , G03G5/022 , G11B7/249 , G11B7/2531 , G11B7/2585
摘要： A reversible optical recording medium is comprised of an electrically conductive layer overlain by a thermoplastic layer containing a light absorptive compound selected from the group consisting of metal complexes of substituted ethylene dithiols having the structure ##STR1## where M is Pt, Pd, or Ni and R and R' are independently alkyl, phenyl or substituted phenyl groups. Information is recorded by sequentially charging the recording medium and then heating it above its softening temperature by absorption of the recording light beam in the thermoplastic layer.
摘要翻译： 可逆光学记录介质包括由包含光吸收化合物的热塑性层覆盖的导电层，所述光吸收化合物选自具有结构“IMAGE”的取代的乙烯二硫醇的金属络合物，其中M是Pt，Pd或Ni，和 R和R'独立地是烷基，苯基或取代的苯基。 通过顺序地对记录介质进行充电来记录信息，然后通过吸收热塑性层中的记录光束将其加热到高于其软化温度。
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5.发明授权Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process 有权使用热元素辅助化学气相沉积工艺快速的低温外延生长公开(公告)号：US06251183B1
公开(公告)日：2001-06-26
申请号：US09316342
申请日：1999-05-21
IPC分类号： C30B2514
摘要： The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.
摘要翻译： 本发明提供了一种在晶体衬底上沉积外延层的方法，包括以下步骤：提供具有能够加热的元件的室，将衬底引入室中，在足以分解源气体的温度下加热元件，通过 源气体与元件接触; 以及在所述衬底上形成外延层。
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6.发明授权Method of forming a dielectric film and semiconductor device including said film 失效形成电介质膜的方法和包括所述膜的半导体器件
公开(公告)号：US4692344A
公开(公告)日：1987-09-08
申请号：US834384
申请日：1986-02-28
IPC分类号： H01L21/318
CPC分类号： H01L21/3185
摘要： A method for forming a dielectric film over a semiconductor device is disclosed. The body of semiconductor material is formed and a hydrogen-containing silicon nitride material substantially free of silicon-hydrogen bonds is formed thereover.Also disclosed is a semiconductor device, including a body of semiconductor material and a dielectric film thereover. The dielectric film is a hydrogen-containing silicon nitride material substantially free of silicon-to-hydrogen bonds.
摘要翻译： 公开了一种在半导体器件上形成电介质膜的方法。 形成半导体材料体，并且在其上形成基本上不含硅 - 氢键的含氢氮化硅材料。 还公开了一种半导体器件，包括半导体材料体和其上的介电膜。 电介质膜是基本上不含硅 - 氢键的含氢氮化硅材料。
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