公开(公告)号：US20050151178A1

公开(公告)日：2005-07-14

申请号：US10749771

申请日：2003-12-30

申请人： James Shyu ,  Hsi-Chieh Chen ,  Chuan-Chi Chen

发明人： James Shyu ,  Hsi-Chieh Chen ,  Chuan-Chi Chen

IPC分类号： H01L21/314 ,  H01L21/318 ,  H01L21/32 ,  H01L21/8242 ,  H01L29/94

CPC分类号： H01L27/10829 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/32 ,  H01L27/10867 ,  H01L29/945

摘要： A method for manufacturing a trench capacitor that comprises defining a semiconductor substrate, forming a trench with a lower region and an upper region in the semiconductor substrate, forming a buried conductive region around the lower region, forming a first insulating layer along sidewalls of the trench up to a level between the lower region and the upper region, forming a second insulating layer along the sidewalls of the trench at the upper region, the second insulating layer being separated from the first insulating layer by an intermediate region, and forming an oxide on the sidewalls of the trench at the intermediate region.

摘要翻译： 一种制造沟槽电容器的方法，包括限定半导体衬底，在半导体衬底中形成具有下部区域和上部区域的沟槽，在下部区域周围形成掩埋导电区域，沿着沟槽的侧壁形成第一绝缘层 直到下部区域和上部区域之间的水平面，在上部区域沿着沟槽的侧壁形成第二绝缘层，第二绝缘层通过中间区域与第一绝缘层分离，并且形成氧化物 在中间区域的沟槽的侧壁。

公开(公告)号：US20060228864A1

公开(公告)日：2006-10-12

申请号：US11103948

申请日：2005-04-12

申请人： Hsi-Chieh Chen ,  Chuan-Chi Chen

发明人： Hsi-Chieh Chen ,  Chuan-Chi Chen

IPC分类号： H01L21/76

CPC分类号： H01L29/66181 ,  H01L27/1087

摘要： A semiconductor device having a transistor and a storage capacitor. The transistor includes source and drain regions formed on a substrate. The storage capacitor is coupled to the transistor. The storage capacitor is formed from a bottle-shaped trench and having an Epi-Si layer grown inside the trench to form at least part of one of the source and drain regions. The Epi-Si layer can be selectively grown inside the trench from portions of the substrate such that the Epi-Si layer is used to define a bottle-shape for the trench.

摘要翻译： 具有晶体管和存储电容器的半导体器件。 晶体管包括形成在衬底上的源区和漏区。 存储电容器耦合到晶体管。 存储电容器由瓶形沟槽形成并且具有在沟槽内生长的Epi-Si层以形成源区和漏区之一的至少一部分。 可以从衬底的部分选择性地在沟槽内生长Epi-Si层，使得Epi-Si层用于限定沟槽的瓶形。

公开(公告)号：US06995451B2

公开(公告)日：2006-02-07

申请号：US10749771

申请日：2003-12-30

申请人： James Shyu ,  Hsi-Chieh Chen ,  Chuan-Chi Chen

发明人： James Shyu ,  Hsi-Chieh Chen ,  Chuan-Chi Chen

IPC分类号： H01L21/20 ,  H01L29/00

CPC分类号： H01L27/10829 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/32 ,  H01L27/10867 ,  H01L29/945

摘要： A method for manufacturing a trench capacitor that comprises defining a semiconductor substrate, forming a trench with a lower region and an upper region in the semiconductor substrate, forming a buried conductive region around the lower region, forming a first insulating layer along sidewalls of the trench up to a level between the lower region and the upper region, forming a second insulating layer along the sidewalls of the trench at the upper region, the second insulating layer being separated from the first insulating layer by an intermediate region, and forming an oxide on the sidewalls of the trench at the intermediate region.

摘要翻译： 一种制造沟槽电容器的方法，包括限定半导体衬底，在半导体衬底中形成具有下部区域和上部区域的沟槽，在下部区域周围形成掩埋导电区域，沿着沟槽的侧壁形成第一绝缘层 直到下部区域和上部区域之间的水平面，在上部区域沿着沟槽的侧壁形成第二绝缘层，第二绝缘层通过中间区域与第一绝缘层分离，并形成氧化物 在中间区域的沟槽的侧壁。

公开(公告)号：US20070072388A1

公开(公告)日：2007-03-29

申请号：US11267163

申请日：2005-11-07

申请人： Chuan-Chi Chen ,  Yang-Yao Su

发明人： Chuan-Chi Chen ,  Yang-Yao Su

IPC分类号： H01L21/76

CPC分类号： H01L21/76232 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/76237 ,  H01L29/66181

摘要： Fabrication of a bottle-shaped trench is disclosed. A semiconductor substrate with a trench therein is provided. An ion-doped barrier layer is formed in the trench, exposing the upper portion surfaces of the sidewall of the trench. An ion implantation is performed on the upper portion surfaces of the sidewall of the trench to reduce the oxidation rate in the substrate near the upper portion of the trench. The ion-doped barrier layer is removed, exposing the lower portion and bottom surfaces of the sidewall of the trench. A thermal oxidation treatment is performed, forming an oxide layer on the surface of the trench. The thickness of the oxide layer on the upper portion of the sidewall surface is much thinner than that of the oxide layer on the lower portion of the sidewall surface or that of the bottom surface. A bottle-shaped trench is formed by removing the oxide layer.

摘要翻译： 公开了一种瓶形沟槽的制造。 提供其中具有沟槽的半导体衬底。 在沟槽中形成离子掺杂阻挡层，暴露沟槽侧壁的上部表面。 在沟槽的侧壁的上表面上进行离子注入，以降低在沟槽上部附近的衬底中的氧化速率。 去除离子掺杂阻挡层，暴露沟槽侧壁的下部和底部表面。 进行热氧化处理，在沟槽的表面上形成氧化物层。 侧壁表面的上部的氧化物层的厚度比侧壁表面的下部或底面的氧化物层的厚度薄得多。 通过去除氧化物层形成瓶状沟槽。

公开(公告)号：US20130319516A1

公开(公告)日：2013-12-05

申请号：US13633175

申请日：2012-10-02

申请人： Jung-Wu Chien ,  Chuan-Chi Chen

发明人： Jung-Wu Chien ,  Chuan-Chi Chen

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/022433 ,  H01L31/0504 ,  Y02E10/50

摘要： A method for manufacturing a front electrode of a solar cell and a solar cell device manufactured by the same method are provided. The method includes steps of providing a substrate; performing a first screen printing process to form at least one first electrode over the substrate; and performing a second screen printing process to form at least one row of a second electrode structure over the substrate. The first electrode is formed with a strip body and a plurality of salients connected to the strip body. The second electrode structure has a plurality of sections of finger electrodes, wherein first ends of the finger electrodes directly contact with first surfaces of the salients of the first electrode, respectively, without extending to the strip body.

摘要翻译： 提供了一种制造太阳能电池的前电极的方法和通过相同的方法制造的太阳能电池装置。 该方法包括提供衬底的步骤; 执行第一丝网印刷工艺以在所述基底上形成至少一个第一电极; 以及执行第二丝网印刷处理以在所述基底上形成至少一行第二电极结构。 第一电极形成有带状体和连接到条状体的多个凸起。 第二电极结构具有多个指状电极部分，其中指状电极的第一端分别与第一电极的凸起的第一表面直接接触，而不延伸到带状体。

公开(公告)号：US20080318392A1

公开(公告)日：2008-12-25

申请号：US11864037

申请日：2007-09-28

申请人： Kuo-Hsiang Hung ,  Chuan-Chi Chen

发明人： Kuo-Hsiang Hung ,  Chuan-Chi Chen

IPC分类号： H01L21/76

CPC分类号： H01L21/76232

摘要： A method for forming shallow trench isolation structures is provided. The method comprises the following steps: providing a substrate with a “v” shaped trench, forming a first dielectric layer to cover the upper portion of the inner wall of the trench; conducting the first etching process to pull back the uncovered inner wall of the trench; removing the first dielectric layer; and forming a second dielectric layer to cover the trench and form a void inside the trench.

摘要翻译： 提供了形成浅沟槽隔离结构的方法。 该方法包括以下步骤：为基底提供“v”形沟槽，形成第一介电层以覆盖沟槽内壁的上部; 进行第一蚀刻工艺以拉回沟槽的未覆盖的内壁; 去除第一电介质层; 以及形成第二电介质层以覆盖沟槽并在沟槽内形成空隙。