公开(公告)号：US20120086080A1

公开(公告)日：2012-04-12

申请号：US12899181

申请日：2010-10-06

申请人： Hsin-Liang Chen ,  Chan Wing Chor

发明人： Hsin-Liang Chen ,  Chan Wing Chor

IPC分类号： H01L23/62

CPC分类号： H01L27/0259

摘要： An electrostatic discharge (ESD) protected device may include a substrate, an N+ doped buried layer, an N-type well region and a P-type well region. The N+ doped buried layer may be disposed proximate to the substrate. The N-type well region may be disposed proximate to a portion of the N+ doped buried layer to form a collector region. The P-type well region may be disposed proximate to remaining portions of the N+ doped buried layer and having at least a P+ doped plate corresponding to a base region and distributed segments of N+ doped plates corresponding to an emitter region.

摘要翻译： 静电放电（ESD）保护器件可以包括衬底，N +掺杂掩埋层，N型阱区和P型阱区。 N +掺杂掩埋层可以靠近衬底设置。 N型阱区可以靠近N +掺杂掩埋层的一部分设置以形成集电极区。 P型阱区可以靠近N +掺杂掩埋层的剩余部分设置，并且至少具有对应于基极区域的P +掺杂板和对应于发射极区域的N +掺杂板的分布段。

公开(公告)号：US08513774B2

公开(公告)日：2013-08-20

申请号：US12899181

申请日：2010-10-06

申请人： Hsin-Liang Chen ,  Chan Wing Chor

发明人： Hsin-Liang Chen ,  Chan Wing Chor

IPC分类号： H01L29/00

CPC分类号： H01L27/0259

摘要： An electrostatic discharge (ESD) protected device may include a substrate, an N+ doped buried layer, an N-type well region and a P-type well region. The N+ doped buried layer may be disposed proximate to the substrate. The N-type well region may be disposed proximate to a portion of the N+ doped buried layer to form a collector region. The P-type well region may be disposed proximate to remaining portions of the N+ doped buried layer and having at least a P+ doped plate corresponding to a base region and distributed segments of N+ doped plates corresponding to an emitter region.

摘要翻译： 静电放电（ESD）保护器件可以包括衬底，N +掺杂掩埋层，N型阱区和P型阱区。 N +掺杂掩埋层可以靠近衬底设置。 N型阱区可以靠近N +掺杂掩埋层的一部分设置以形成集电极区。 P型阱区可以靠近N +掺杂掩埋层的剩余部分设置，并且至少具有对应于基极区域的P +掺杂板和对应于发射极区域的N +掺杂板的分布段。

公开(公告)号：US20130214821A1

公开(公告)日：2013-08-22

申请号：US13401652

申请日：2012-02-21

申请人： Hsin-Liang Chen ,  Wen-Ching Tung

发明人： Hsin-Liang Chen ,  Wen-Ching Tung

IPC分类号： H03K17/06 ,  H01L29/10

CPC分类号： H01L27/0259 ,  H03K17/127 ,  H03K17/567

摘要： A high voltage semiconductor element and an operating method thereof are provided. The high voltage semiconductor element comprises a high voltage metal-oxide-semiconductor transistor (HVMOS) and a NPN type electro-static discharge bipolar transistor (ESD BJT). The HVMOS has a drain and a source. The NPN type ESD BJT has a first collector and a first emitter. The first collector is electronically connected to the drain, and the first emitter is electronically connected to the source.

摘要翻译： 提供高电压半导体元件及其操作方法。 高电压半导体元件包括高电压金属氧化物半导体晶体管（HVMOS）和NPN型静电放电双极晶体管（ESD BJT）。 HVMOS有一个漏极和源极。 NPN型ESD BJT具有第一集电极和第一发射极。 第一集电极电连接到漏极，第一发射极电连接到源极。

公开(公告)号：US20050253358A1

公开(公告)日：2005-11-17

申请号：US11131086

申请日：2005-05-17

申请人： Hsin-Liang Chen

发明人： Hsin-Liang Chen

IPC分类号： B62K1/00 ,  E05D11/06 ,  H04M1/02

CPC分类号： H04M1/0218 ,  E05D11/06 ,  E05Y2201/224 ,  E05Y2600/10 ,  E05Y2900/606 ,  Y10T16/54025 ,  Y10T16/540255

摘要： An adjustable hinge device is provided for a foldable apparatus in accordance with the present invention. The foldable apparatus, such as a portable mobile phone, comprises a cover and a body connected by the hinge so as to make the cover rotatable relative to the body between a fully opened position and a fully closed position. When the cover rotates to the fully opened position, a maximum opening angle is defined. According to the relative movement between a rotatable portion and a fixed portion of the adjustable hinge, the maximum opening angle can be adjusted to fit different requirements.

摘要翻译： 根据本发明的可折叠装置提供了一种可调铰链装置。 诸如便携式移动电话的可折叠装置包括盖和通过铰链连接的主体，以使盖能够在完全打开位置和完全关闭位置之间相对于主体旋转。 当盖旋转到完全打开位置时，定义最大开启角度。 根据可调节铰链的可旋转部分和固定部分之间的相对运动，可以调整最大开启角度以适应不同的要求。

公开(公告)号：US08669639B2

公开(公告)日：2014-03-11

申请号：US13493311

申请日：2012-06-11

申请人： Chih-Ling Hung ,  Chien-Wen Chu ,  Hsin-Liang Chen ,  Wing-Chor Chan

发明人： Chih-Ling Hung ,  Chien-Wen Chu ,  Hsin-Liang Chen ,  Wing-Chor Chan

IPC分类号： H01L29/735

CPC分类号： H01L21/8224 ,  H01L27/0259 ,  H01L27/082 ,  H01L29/402 ,  H01L29/735 ,  H01L29/861

摘要： A semiconductor element, a manufacturing method thereof and an operating method thereof are provided. The semiconductor element includes a substrate, a first well, a second well, a third well, a fourth well, a bottom layer, a first heavily doping region, a second heavily doping region, a third heavily doping region and a field plane. The first well, the bottom layer and the second well surround the third well for floating the third well and the substrate. The first, the second and the third heavily doping regions are disposed in the first, the second and the third wells respectively. The field plate is disposed above a junction between the first well and the fourth well.

摘要翻译： 提供半导体元件及其制造方法及其操作方法。 半导体元件包括衬底，第一阱，第二阱，第三阱，第四阱，底层，第一重掺杂区，第二重掺杂区，第三重掺杂区和场平面。 第一井，底层和第二井围绕第三井，用于浮置第三井和衬底。 第一，第二和第三重掺杂区域分别设置在第一，第二和第三阱中。 场板设置在第一井和第四井之间的连接点的上方。

公开(公告)号：US20120248574A1

公开(公告)日：2012-10-04

申请号：US13073848

申请日：2011-03-28

申请人： Hsin-Liang Chen ,  Wing-Chor Chan ,  Shyi-Yuan Wu

发明人： Hsin-Liang Chen ,  Wing-Chor Chan ,  Shyi-Yuan Wu

IPC分类号： H01L29/70 ,  H01L21/328

CPC分类号： H01L27/0259

摘要： A semiconductor structure and a manufacturing method and an operating method for the same are provided. The semiconductor structure comprises a first well region, a second well region, a first doped region, a second doped region, an anode, and a cathode. The second well region is adjacent to the first well region. The first doped region is on the second well region. The second doped region is on the first well region. The anode is coupled to the first doped region and the second well region. The cathode is coupled to the first well region and the second doped region. The first well region and the first doped region have a first conductivity type. The second well region and the second doped region have a second conductivity type opposite to the first conductivity type.

摘要翻译： 提供了一种半导体结构及其制造方法及其操作方法。 半导体结构包括第一阱区，第二阱区，第一掺杂区，第二掺杂区，阳极和阴极。 第二阱区域与第一阱区域相邻。 第一掺杂区位于第二阱区上。 第二掺杂区域在第一阱区域上。 阳极耦合到第一掺杂区域和第二阱区域。 阴极耦合到第一阱区和第二掺杂区。 第一阱区和第一掺杂区具有第一导电类型。 第二阱区和第二掺杂区具有与第一导电类型相反的第二导电类型。

公开(公告)号：US07677803B2

公开(公告)日：2010-03-16

申请号：US11245820

申请日：2005-10-07

申请人： Hsin-Liang Chen ,  Jin-Sheng Chen

发明人： Hsin-Liang Chen ,  Jin-Sheng Chen

IPC分类号： F16C29/06 ,  F16C33/10

CPC分类号： F16C29/0609 ,  F16C29/0647 ,  F16C33/6659 ,  Y10T403/255

摘要： A quick release coupling device for a linear guideway comprises a rail, a slide block, a pair of end caps and a pair of connectors. Each of the end caps has a through hole in which are annularly arranged a slant rotary abutment surface and a plurality of grooves. The connectors each has an end fixed to the slide block, and another end of the connectors is defined with a wing-shaped portion, the wing-shaped portion has an abutment surface for mating with the rotary abutment surface of the end caps.

摘要翻译： 用于直线导轨的快速释放联接装置包括轨道，滑动块，一对端盖和一对连接器。 每个端盖具有通孔，其中环形布置有倾斜的旋转邻接表面和多个凹槽。 连接器各自具有固定到滑动块的端部，并且连接器的另一端限定有翼形部分，翼状部分具有用于与端盖的旋转邻接表面配合的邻接表面。

公开(公告)号：US20090135248A1

公开(公告)日：2009-05-28

申请号：US12157789

申请日：2008-06-13

申请人： Shih Tseng Lee ,  Chieh-Tsai Wu ,  Wen-Chung Teng ,  Hsin-Liang Chen

发明人： Shih Tseng Lee ,  Chieh-Tsai Wu ,  Wen-Chung Teng ,  Hsin-Liang Chen

IPC分类号： H04N13/04

CPC分类号： G02B27/0172 ,  A61B90/361 ,  A61B2090/371 ,  A61B2090/502 ,  G02B5/30 ,  G02B2027/011 ,  G02B2027/0134 ,  H04N13/344

摘要： The present invention discloses a stereoscopic display apparatus comprising a first and a second image displayer, an aspherical reflection mirror, a beamsplitter and a housing. The first and the second image displayer are used for projecting a first and a second image light respectively. The aspherical reflection mirror is used for refracting the image light and for changing a polarity of the image light. The beamsplitter, disposed between the image generator and the aspherical reflection mirror, is used for deflecting a proceeding route of the image light based on the polarity of the optical signal. The housing has at least one opening for an operator to inspect a first image and a second image through.

摘要翻译： 本发明公开了一种包括第一和第二图像显示器，非球面反射镜，分束器和外壳的立体显示装置。 第一和第二图像显示器分别用于投影第一和第二图像光。 非球面反射镜用于折射图像光并改变图像光的极性。 设置在图像发生器和非球面反射镜之间的分束器用于基于光信号的极性偏转图像光的行进路线。 壳体具有至少一个开口，用于操作者检查第一图像和第二图像。

公开(公告)号：US07096537B2

公开(公告)日：2006-08-29

申请号：US11131086

申请日：2005-05-17

申请人： Hsin-Liang Chen

发明人： Hsin-Liang Chen

IPC分类号： E05D11/10

CPC分类号： H04M1/0218 ,  E05D11/06 ,  E05Y2201/224 ,  E05Y2600/10 ,  E05Y2900/606 ,  Y10T16/54025 ,  Y10T16/540255

摘要： An adjustable hinge device is provided for a foldable apparatus in accordance with the present invention. The foldable apparatus, such as a portable mobile phone, comprises a cover and a body connected by the hinge so as to make the cover rotatable relative to the body between a fully opened position and a fully closed position. When the cover rotates to the fully opened position, a maximum opening angle is defined. According to the relative movement between a rotatable portion and a fixed portion of the adjustable hinge, the maximum opening angle can be adjusted to fit different requirements.

摘要翻译： 根据本发明的可折叠装置提供了一种可调铰链装置。 诸如便携式移动电话的可折叠装置包括盖和通过铰链连接的主体，以使盖能够在完全打开位置和完全关闭位置之间相对于主体旋转。 当盖旋转到完全打开位置时，定义最大开启角度。 根据可调节铰链的可旋转部分和固定部分之间的相对运动，可以调整最大开启角度以适应不同的要求。

公开(公告)号：USD490549S1

公开(公告)日：2004-05-25

申请号：US29189975

申请日：2003-09-15

申请人： Hsin-Liang Chen

设计人： Hsin-Liang Chen