公开(公告)号：US20050145614A1

公开(公告)日：2005-07-07

申请号：US10753253

申请日：2004-01-05

申请人： Hsueh-Chang Wu ,  Chih-Tien Chang ,  Jhi-Cherng Lu ,  Bing-Hung Chen ,  Mei-Sheng Zhou

发明人： Hsueh-Chang Wu ,  Chih-Tien Chang ,  Jhi-Cherng Lu ,  Bing-Hung Chen ,  Mei-Sheng Zhou

IPC分类号： F27B5/04 ,  F27B5/14 ,  F27B5/18 ,  F27B17/00 ,  F27D11/00 ,  F27D19/00 ,  F27D21/00 ,  G05D23/00 ,  H01L21/00

CPC分类号： H01L21/67248 ,  F27B5/04 ,  F27B5/14 ,  F27B5/18 ,  F27B17/0025 ,  F27D19/00 ,  F27D21/0014 ,  F27D2019/0037 ,  H01L21/67109

摘要： A semiconductor device manufacturing system including a processing subsystem and a compensation thermal subsystem. The processing subsystem includes a process chamber and a thermal control subsystem having a processing subsystem heating element and configured to generate a process chamber temperature profile. The compensation thermal subsystem includes a temperature sensor configured to detect the process chamber temperature profile, a compensation thermal control unit (CTCU) configured to determine variation between the process chamber temperature profile and a desired temperature profile, and a compensation heating element configured to alter the process chamber temperature profile in response to the variation detected by the CTCU.

摘要翻译： 一种包括处理子系统和补偿热子系统的半导体器件制造系统。 处理子系统包括处理室和具有处理子系统加热元件并被配置为产生处理室温度分布的热控制子系统。 补偿热子系统包括被配置为检测处理室温度分布的温度传感器，被配置为确定处理室温度分布和期望温度分布之间的变化的补偿热控制单元（CTCU），以及补偿加热元件，其被配置为改变 响应于CTCU检测到的变化，处理室温度曲线。

公开(公告)号：US20060043029A1

公开(公告)日：2006-03-02

申请号：US10931123

申请日：2004-08-30

申请人： Chih-Tien Chang ,  Cheng-Husn Chan ,  Bing-Hung Chen ,  Hsueh-Chang Wu ,  Mei-Sheng Zhou

发明人： Chih-Tien Chang ,  Cheng-Husn Chan ,  Bing-Hung Chen ,  Hsueh-Chang Wu ,  Mei-Sheng Zhou

IPC分类号： B01D29/66

CPC分类号： B01D37/00 ,  B24B57/02

摘要： A continuous liquid delivery system which includes at least one primary filter and at least one secondary filter for alternatively receiving a liquid such as a CMP polishing slurry. A primary backwash circuit is provided in fluid communication with each primary filter for backwashing of the primary filter. At least one secondary backwash circuit is provided in fluid communication with each secondary filter for backwashing of the secondary filter. As the liquid is distributed through the primary filter or filters, the secondary filter or filters can be backwashed, and vice-versa to facilitate a continuous flow of the liquid from a source to a destination.

摘要翻译： 一种连续液体输送系统，其包括至少一个初级过滤器和至少一个辅助过滤器，用于替代地接收液体，例如CMP抛光浆料。 提供主回流电路与每个主过滤器流体连通，用于主过滤器的反冲洗。 提供至少一个二次反洗电路与每个二次过滤器流体连通，用于二次过滤器的反冲洗。 当液体通过主过滤器或过滤器分配时，二次过滤器或过滤器可以被反冲洗，反之亦然，以便于液体从源到目的地的连续流动。

公开(公告)号：US20050016467A1

公开(公告)日：2005-01-27

申请号：US10626998

申请日：2003-07-24

申请人： Yi-Li Hsiao ,  Mei-Sheng Zhou ,  Chin-Hsin Peng ,  Chien-Ling Huang ,  Tse-Yi Chen ,  Chun-Yi Lee ,  Hsueh-Chang Wu

发明人： Yi-Li Hsiao ,  Mei-Sheng Zhou ,  Chin-Hsin Peng ,  Chien-Ling Huang ,  Tse-Yi Chen ,  Chun-Yi Lee ,  Hsueh-Chang Wu

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： H01L21/67248 ,  H01J2237/2001 ,  H01L21/67109

摘要： A system and method which is capable of compensating for unintended elevations in process temperatures induced in a substrate during a semiconductor fabrication process in order to reduce or eliminate disparities in critical dimensions of device features. The system may be a plasma etching system comprising a process chamber containing an electrostatic chuck (ESC) for supporting a wafer substrate. A chiller outside the process chamber includes a main coolant chamber, which contains a main coolant fluid, as well as an compensation coolant chamber, which contains an compensation coolant fluid. A main circulation loop normally circulates the main coolant fluid from the main coolant chamber through the electrostatic chuck to maintain the chuck at a desired set point temperature.

摘要翻译： 一种系统和方法，其能够在半导体制造过程期间补偿在衬底中感应的工艺温度中的意外高度，以便减少或消除器件特征的关键尺寸的不均匀性。 该系统可以是包括含有用于支撑晶片衬底的静电吸盘（ESC）的处理室的等离子体蚀刻系统。 处理室外部的冷却器包括主冷却剂室，其包含主冷却剂流体，以及补偿冷却剂室，其包含补偿冷却剂流体。 主循环回路通常使主冷却剂流体从主冷却剂室通过静电吸盘循环，以将卡盘保持在所需的设定点温度。

公开(公告)号：US06843264B2

公开(公告)日：2005-01-18

申请号：US10323377

申请日：2002-12-18

申请人： Chih-Tien Chang ,  Hsueh-Chang Wu ,  Sunny Wu ,  Chien-Ling Huang ,  Chin-Hsin Peng ,  Mei-Seng Zhou

发明人： Chih-Tien Chang ,  Hsueh-Chang Wu ,  Sunny Wu ,  Chien-Ling Huang ,  Chin-Hsin Peng ,  Mei-Seng Zhou

IPC分类号： C23C16/44 ,  F16K11/10 ,  F16K1/18

CPC分类号： F16K1/223 ,  C23C16/4412 ,  Y10T137/0396 ,  Y10T137/86944 ,  Y10T137/87378 ,  Y10T137/87523

摘要： A new and improved, multi-phase pressure control valve for facilitating quick and accurate attainment and stabilization of gas pressure inside a semiconductor fabrication process chamber such as an etch chamber or CVD chamber. In one embodiment, the multi-phase pressure control valve is a butterfly-type valve which includes outer and inner vanes that independently control flow of gases from a process chamber to a vacuum pump. The larger-diameter outer vane stabilizes gas pressures within a large range, whereas the inner vane stabilizes pressure within a smaller range. In another embodiment, the multi-phase pressure control valve is a gate-type valve which may include a pivoting outer vane and an inner vane slidably disposed with respect to the outer vane for exposing a central gas flow opening in the outer vane.

摘要翻译： 一种新的和改进的多相压力控制阀，用于促进半导体制造工艺室（例如蚀刻室或CVD室）内的气体压力的快速和准确的获得和稳定。 在一个实施例中，多相压力控制阀是蝶形阀，其包括独立地控制气体从处理室到真空泵的流动的外叶片和内叶片。 较大直径的外叶片将气体压力稳定在大范围内，而内叶片将压力稳定在较小的范围内。 在另一个实施例中，多相压力控制阀是门型阀，其可以包括枢转外叶片和相对于外叶片可滑动地设置的用于暴露外叶片中的中心气流开口的内叶片。