Integration of strained Ge into advanced CMOS technology
    1.
    发明申请
    Integration of strained Ge into advanced CMOS technology 失效
    将应变锗融入先进的CMOS技术

    公开(公告)号:US20050285097A1

    公开(公告)日:2005-12-29

    申请号:US10876155

    申请日:2004-06-24

    摘要: A structure and method of fabrication for PFET devices in a compressively strained Ge layer is disclosed. The fabrication method of such devices is compatible with standard CMOS technology and it is fully scalable. The processing includes selective epitaxial depositions of an over 50% Ge content buffer layer, a pure Ge layer, and a SiGe top layer. Fabricated buried channel PMOS devices hosted in the compressively strained Ge layer show superior device characteristics relative to similar Si devices.

    摘要翻译: 公开了一种用于压缩应变Ge层中的PFET器件的结构和方法。 这种器件的制造方法与标准CMOS技术兼容,并且具有完全可扩展性。 该处理包括超过50%Ge含量缓冲层,纯Ge层和SiGe顶层的选择性外延沉积。 承载在压缩应变Ge层中的制造掩埋沟道PMOS器件相对于类似的Si器件显示出优异的器件特性。

    Integration of strained Ge into advanced CMOS technology
    2.
    发明申请
    Integration of strained Ge into advanced CMOS technology 有权
    将应变锗融入先进的CMOS技术

    公开(公告)号:US20070218621A1

    公开(公告)日:2007-09-20

    申请号:US11799261

    申请日:2007-04-10

    IPC分类号: H01L21/8238

    摘要: A structure and method of fabrication for PFET devices in a compressively strained Ge layer is disclosed. The fabrication method of such devices is compatible with standard CMOS technology and it is fully scalable. The processing includes selective epitaxial depositions of an over 50% Ge content buffer layer, a pure Ge layer, and a SiGe top layer. Fabricated buried channel PMOS devices hosted in the compressively strained Ge layer show superior device characteristics relative to similar Si devices.

    摘要翻译: 公开了一种用于压缩应变Ge层中的PFET器件的结构和方法。 这种器件的制造方法与标准CMOS技术兼容,并且具有完全可扩展性。 该处理包括超过50%Ge含量缓冲层,纯Ge层和SiGe顶层的选择性外延沉积。 承载在压缩应变Ge层中的制造掩埋沟道PMOS器件相对于类似的Si器件显示出优异的器件特性。

    Metal gated ultra short MOSFET devices
    3.
    发明申请
    Metal gated ultra short MOSFET devices 有权
    金属门极超短MOSFET器件

    公开(公告)号:US20070246753A1

    公开(公告)日:2007-10-25

    申请号:US11407473

    申请日:2006-04-20

    IPC分类号: H01L29/76

    摘要: MOSFET devices suitable for operation at gate lengths less than about 40 nm, and methods of their fabrication is being presented. The MOSFET devices include a ground plane formed of a monocrystalline Si based material. A Si based body layer is epitaxially disposed over the ground plane. The body layer is doped with impurities of opposite type than the ground plane. The gate has a metal with a mid-gap workfunction directly contacting a gate insulator layer. The gate is patterned to a length of less than about 40 nm, and possibly less than 20 nm. The source and the drain of the MOSFET are doped with the same type of dopant as the body layer. In CMOS embodiments of the invention the metal in the gate of the NMOS and the PMOS devices may be the same metal.

    摘要翻译: 适用于栅极长度小于约40nm的MOSFET器件及其制造方法。 MOSFET器件包括由单晶Si基材料形成的接地平面。 Si基体层外延地设置在接地平面上。 体层掺杂了与地平面相反的杂质。 栅极具有中间功能函数的金属,其直接接触栅极绝缘体层。 栅极被图案化成小于约40nm,并且可能小于20nm的长度。 MOSFET的源极和漏极掺杂有与体层相同类型的掺杂剂。 在本发明的CMOS实施例中,NMOS和PMOS器件的栅极中的金属可以是相同的金属。

    Ocular device and method for glaucoma treatment

    公开(公告)号:US11446179B2

    公开(公告)日:2022-09-20

    申请号:US16374096

    申请日:2019-04-03

    申请人: Jack Chu

    发明人: Jack Chu

    摘要: An ocular device for treating glaucoma in an eye are described herein. The ocular device includes a first end, a second end, and a body. The first end is configured to seat in an anterior chamber of an eye. The first end includes an inlet configured to facilitate an ingress of aqueous humor into the ocular device. The second end is configured to seat in a tear film of the eye. The second end includes an outlet configured to facilitate release a flow of the aqueous humor into the tear film. The body is defined by a fluid conduit. The body includes a lumen having a lumen length and a lumen cross sectional area. The lumen length and the lumen cross sectional area are configured to control an intraocular pressure (IOP) of the eye by controlling the flow of the aqueous humor through the lumen.

    Low powered activation arrangement and method thereof
    6.
    发明申请
    Low powered activation arrangement and method thereof 有权
    低功率激活装置及其方法

    公开(公告)号:US20120115392A1

    公开(公告)日:2012-05-10

    申请号:US13317579

    申请日:2011-10-20

    申请人: Jack Chu

    发明人: Jack Chu

    IPC分类号: A63H3/02

    摘要: A fabric product with a low powered activation device and a conductive arrangement, which includes a body having an outer covering which is soft and flexible to providing an outer skin surface and an inner skin surface, and defines a body receiving cavity. The low powered activation device is an electronic unit received inside the body receiving cavity which comprises a casing, a power source, an activation circuit, and an operator which is activated through the activation circuit. The conductive arrangement electrically connects between the electronic unit and the outer skin surface, which includes one or more conductive threads affixed on the inner skin surface, each having one end portion defining an activation control which penetrates through the inner skin surface to the outer skin surface, thereby when the activation control is contacted by a user, the activation circuit is activated to activate the operator of the electronic unit.

    摘要翻译: 一种具有低功率激活装置和导电装置的织物产品,其包括具有柔软和柔性以提供外皮表面和内表皮表面的外覆层的主体,并且限定了身体接收腔。 低功率激活装置是容纳在身体接收腔内的电子单元,其包括壳体,电源,激活电路和通过激活电路激活的操作器。 导电装置电连接在电子单元和外皮表面之间,其包括固定在内表皮表面上的一个或多个导电螺纹,每个导电螺纹均具有限定激活控制的端部,该激活控制穿透内皮表面到外皮表面 从而当激活控制被用户接触时,激活电路被激活以激活电子单元的操作者。

    Energy saving PWM sound device
    7.
    发明申请
    Energy saving PWM sound device 有权
    节能PWM音响装置

    公开(公告)号:US20120045075A1

    公开(公告)日:2012-02-23

    申请号:US12806714

    申请日:2010-08-18

    申请人: Jack Chu

    发明人: Jack Chu

    IPC分类号: H03G5/00

    摘要: An energy saving PWM sound device forms a frequency-dependent impedance device implemented on the PWM output of the voice-ICs in series to lower the power consumption and to enhance sound quality of the voice-IC products. The device includes a hollow core body and an elongated conductive element. The core body has a top rim, a bottom rim, and two side rims to define a through channel therewithin. The conductive element winds around the top rim of the core body, wherein two ends of the conductive element are adapted for connecting with the PWM output, such that when the conductive element is electrically conducted, the core body acts as an inductor at lower frequency and a frequency-dependent resistor in series with the inductor at higher frequency for blocking most of PWM carrier frequency so as to reduce the power consumption of the voice-ICs product.

    摘要翻译: 节能PWM音响装置在语音IC的PWM输出上串联地形成频率相关的阻抗装置,以降低功耗并提高语音IC产品的声音质量。 该装置包括中空芯体和细长导电元件。 芯体具有顶部边缘,底部边缘和两个侧边缘,以在其中限定通道。 导电元件缠绕在芯体的顶部边缘周围,其中导电元件的两个端部适于与PWM输出连接,使得当导电元件被导电时,芯体用作较低频率的电感器, 一个频率相关的电阻器与较高频率的电感串联,以阻止大多数PWM载波频率,从而降低语音IC产品的功耗。

    Low powered activation arrangement and method thereof
    8.
    发明申请
    Low powered activation arrangement and method thereof 有权
    低功率激活装置及其方法

    公开(公告)号:US20110065355A1

    公开(公告)日:2011-03-17

    申请号:US12584763

    申请日:2009-09-11

    申请人: Jack Chu

    发明人: Jack Chu

    IPC分类号: A63H3/02

    摘要: A fabric product includes a body having a skin made by interweaving a plurality of textile fabrics and a low powered activation arrangement which includes an electronic unit and one or more conductive threads extended underneath the skin of the body. The electronic unit includes a power source, an activation circuit which is a low powered activation circuit, and an operator. Each of the conductive threads has a proximal end portion electrically coupled with the activation circuit and a distal end portion which is extended to an outer surface of the skin of the body at a predetermined location thereof and is arranged in such a manner that when the distal end portion of the conductive thread is being contacted, the activation circuit is activated to actuate the operator.

    摘要翻译: 织物产品包括具有通过交织多个纺织织物制成的皮肤的主体和包括电子单元和延伸在身体的皮肤下方的一个或多个导电丝线的低功率激活装置。 电子单元包括电源,作为低功率启动电路的启动电路和操作者。 每个导电线具有与激活电路电耦合的近端部分和远端部分,该远端部分在其预定位置处延伸到主体的皮肤的外表面,并且以这样的方式布置: 导电线的端部正在接触,启动电路被激活以致操作者。

    Cellular Therapy to Heal Vascular Tissue
    10.
    发明申请
    Cellular Therapy to Heal Vascular Tissue 审中-公开
    细胞疗法治愈血管组织

    公开(公告)号:US20080187524A1

    公开(公告)日:2008-08-07

    申请号:US12062230

    申请日:2008-04-03

    IPC分类号: A61K35/12 A61P7/00

    摘要: The present invention encompasses methods and apparatus for minimizing the risks inherent in endovascular grafting for blood vessel therapy and repair. The invention involves delivering adult stem cells, embryonic stem cells, progenitor cells, fibroblasts, or smooth muscle cells to the diseased blood vessel.

    摘要翻译: 本发明包括用于最小化用于血管治疗和修复的血管内移植中固有的风险的方法和装置。 本发明涉及将成体干细胞,胚胎干细胞,祖细胞,成纤维细胞或平滑肌细胞递送至患病血管。