ARRAY SUBSTRATE, METHOD OF MANUFACTURING THE ARRAY SUBSTRATE, AND LIQUID CRYSTAL DISPLAY DEVICE HAVING THE ARRAY SUBSTRATE
    2.
    发明申请
    ARRAY SUBSTRATE, METHOD OF MANUFACTURING THE ARRAY SUBSTRATE, AND LIQUID CRYSTAL DISPLAY DEVICE HAVING THE ARRAY SUBSTRATE 有权
    阵列基板,制造阵列基板的方法和具有阵列基板的液晶显示装置

    公开(公告)号:US20100019998A1

    公开(公告)日:2010-01-28

    申请号:US12413149

    申请日:2009-03-27

    IPC分类号: G09G3/36 H01L33/00 H01L21/28

    摘要: In an array substrate, a method of manufacturing the array substrate, and a liquid crystal display (LCD) device having the array substrate, a pixel electrode includes an outline portion, connection portions, and slit portions. The outline portion is arranged toward a data line and a gate line thereon, and the connection portions extend in a direction that crosses the data line and the gate line, respectively, to connect to the outline portion. The slit portions protrude from side surfaces of the connection portions to connect to the outline portion. A shielding electrode is arranged toward the outline portion between the data line and the outline portion, and the gate line and the outline portion.

    摘要翻译: 在阵列基板中,制造阵列基板的方法以及具有阵列基板的液晶显示(LCD)装置,像素电极包括轮廓部分,连接部分和狭缝部分。 轮廓部分朝向数据线和其上的栅极线布置,并且连接部分分别在与数据线和栅极线交叉的方向上延伸以连接到轮廓部分。 狭缝部分从连接部分的侧表面突出以连接到轮廓部分。 屏蔽电极朝向数据线和轮廓部分之间的轮廓部分以及栅极线和轮廓部分设置。

    Array substrate, method of manufacturing the array substrate, and liquid crystal display device having the array substrate
    3.
    发明授权
    Array substrate, method of manufacturing the array substrate, and liquid crystal display device having the array substrate 有权
    阵列基板,阵列基板的制造方法以及具有阵列基板的液晶显示装置

    公开(公告)号:US08199088B2

    公开(公告)日:2012-06-12

    申请号:US12413149

    申请日:2009-03-27

    IPC分类号: G09G3/36

    摘要: In an array substrate, a method of manufacturing the array substrate, and a liquid crystal display (LCD) device having the array substrate, a pixel electrode includes an outline portion, connection portions, and slit portions. The outline portion is arranged toward a data line and a gate line thereon, and the connection portions extend in a direction that crosses the data line and the gate line, respectively, to connect to the outline portion. The slit portions protrude from side surfaces of the connection portions to connect to the outline portion. A shielding electrode is arranged toward the outline portion between the data line and the outline portion, and the gate line and the outline portion.

    摘要翻译: 在阵列基板中,制造阵列基板的方法以及具有阵列基板的液晶显示(LCD)装置,像素电极包括轮廓部分,连接部分和狭缝部分。 轮廓部分朝向数据线和其上的栅极线布置,并且连接部分分别在与数据线和栅极线交叉的方向上延伸以连接到轮廓部分。 狭缝部分从连接部分的侧表面突出以连接到轮廓部分。 屏蔽电极朝向数据线和轮廓部分之间的轮廓部分以及栅极线和轮廓部分设置。

    Method of fine patterning a thin film and method of manufacturing a display substrate using the method
    5.
    发明授权
    Method of fine patterning a thin film and method of manufacturing a display substrate using the method 有权
    精细图案化薄膜的方法和使用该方法制造显示基板的方法

    公开(公告)号:US08420302B2

    公开(公告)日:2013-04-16

    申请号:US12480132

    申请日:2009-06-08

    IPC分类号: G03F7/20

    摘要: A method of fine patterning a thin film and a method of manufacturing a display substrate by using the same, in which a fine photo pattern is formed on a base substrate, and a photoresist pattern is formed on the thin film. A fine photo pattern is formed by ashing the photoresist pattern. A fine pattern is formed by removing the thin film exposing through the fine photo pattern. A fine pattern is formed, and the fine pattern has a higher resolution than that of an exposure apparatus. The reliability of a process for manufacturing a display substrate and the display quality of a display device may be improved.

    摘要翻译: 薄膜上形成精细图案化薄膜的方法和使用该方法制造显示基板的方法,其中在基底基板上形成精细的光图案,并且在薄膜上形成光致抗蚀剂图案。 通过灰化光致抗蚀剂图案形成精细的照片图案。 通过去除通过精细照片图案曝光的薄膜来形成精细图案。 形成精细图案,并且精细图案具有比曝光装置更高的分辨率。 可以提高制造显示基板的工艺的可靠性和显示装置的显示质量。

    METHOD OF FINE PATTERNING A THIN FILM AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE METHOD
    6.
    发明申请
    METHOD OF FINE PATTERNING A THIN FILM AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE METHOD 有权
    精细薄膜的方法和使用该方法制造显示基板的方法

    公开(公告)号:US20100009295A1

    公开(公告)日:2010-01-14

    申请号:US12480132

    申请日:2009-06-08

    IPC分类号: G03F7/00

    摘要: A method of fine patterning a thin film and a method of manufacturing a display substrate by using the same, in which a fine photo pattern is formed on a base substrate, and a photoresist pattern is formed on the thin film. A fine photo pattern is formed by ashing the photoresist pattern. A fine pattern is formed by removing the thin film exposing through the fine photo pattern. A fine pattern is formed, and the fine pattern has a higher resolution than that of an exposure apparatus. The reliability of a process for manufacturing a display substrate and the display quality of a display device may be improved.

    摘要翻译: 薄膜上形成精细图案化薄膜的方法和使用该方法制造显示基板的方法,其中在基底基板上形成精细的光图案,并且在薄膜上形成光致抗蚀剂图案。 通过灰化光致抗蚀剂图案形成精细的照片图案。 通过去除通过精细照片图案曝光的薄膜来形成精细图案。 形成精细图案,并且精细图案具有比曝光装置更高的分辨率。 可以提高制造显示基板的工艺的可靠性和显示装置的显示质量。

    Thin film transistor substrate, liquid crystal display having the same, and method of manufacturing the same
    7.
    发明授权
    Thin film transistor substrate, liquid crystal display having the same, and method of manufacturing the same 有权
    薄膜晶体管基板,具有相同的液晶显示器及其制造方法

    公开(公告)号:US08330889B2

    公开(公告)日:2012-12-11

    申请号:US13217054

    申请日:2011-08-24

    摘要: In a thin film transistor, first and second thin film transistors are connected to an Nth gate line and an Mth data line, and first and second sub pixel electrodes are connected to the first and second thin film transistors, respectively. A third thin film transistor includes a gate electrode connected to an (N+1)th gate line, a semiconductor layer overlapping with the gate electrode, a source electrode connected to the second sub pixel electrode and partially overlapping with the gate electrode, and a drain electrode facing the source electrode. A first auxiliary electrode is connected to the drain electrode and arranged on the same layer as the first and second sub pixel electrodes. An opposite electrode is arranged on the same layer as the gate line and at least partially overlaps with the first auxiliary electrode with at least one insulating layer disposed therebetween.

    摘要翻译: 在薄膜晶体管中,第一和第二薄膜晶体管连接到第N栅极线和第M数据线,第一和第二子像素电极分别连接到第一和第二薄膜晶体管。 第三薄膜晶体管包括连接到第(N + 1)栅极线的栅电极,与栅电极重叠的半导体层,连接到第二子像素电极并与栅电极部分重叠的源极, 漏电极面对源电极。 第一辅助电极连接到漏电极并且设置在与第一和第二子像素电极相同的层上。 相对电极布置在与栅极线相同的层上,并且与第一辅助电极至少部分重叠,并且其间设置有至少一个绝缘层。

    Liquid crystal display device
    8.
    发明授权
    Liquid crystal display device 失效
    液晶显示装置

    公开(公告)号:US08194214B2

    公开(公告)日:2012-06-05

    申请号:US12619514

    申请日:2009-11-16

    IPC分类号: G02F1/1337

    CPC分类号: G02F1/133707

    摘要: A liquid crystal display device includes a first substrate, a second substrate and a liquid crystal layer. The first substrate includes a lower substrate and a pixel electrode. The pixel electrode is disposed in a pixel area of the first substrate, in which a first slit part extending along a first direction in a first zigzag shape and a second slit part extending along a second direction and passing through a first bent portion of the first slit part are disposed. The second slit part includes first edges opposite to each other which are inclined at a first angle. The second substrate includes an upper substrate and a common electrode. The common electrode is disposed on the upper substrate, in which a third slit part disposed between adjacent first slit parts and extended in a second zigzag shape is disposed.

    摘要翻译: 液晶显示装置包括第一基板,第二基板和液晶层。 第一基板包括下基板和像素电极。 像素电极设置在第一基板的像素区域中,其中第一狭缝部分沿着第一方向以第一曲折形状延伸,第二狭缝部分沿第二方向延伸并且穿过第一弯曲部分的第一弯曲部分 狭缝部分。 第二狭缝部分包括以第一角度倾斜的彼此相对的第一边缘。 第二基板包括上基板和公共电极。 公共电极设置在上基板上,其中布置在相邻的第一狭缝部分之间并以第二曲折形状延伸的第三狭缝部分。

    Thin film transistor substrate
    9.
    发明授权
    Thin film transistor substrate 有权
    薄膜晶体管基板

    公开(公告)号:US08026991B2

    公开(公告)日:2011-09-27

    申请号:US12255908

    申请日:2008-10-22

    IPC分类号: G02F1/136 H01L29/04 H01L21/00

    摘要: In a thin film transistor, first and second thin film transistors are connected to an Nth gate line and an Mth data line, and first and second sub pixel electrodes are connected to the first and second thin film transistors, respectively. A third thin film transistor includes a gate electrode connected to an (N+1)th gate line, a semiconductor layer overlapping with the gate electrode, a source electrode connected to the second sub pixel electrode and partially overlapping with the gate electrode, and a drain electrode facing the source electrode. A first auxiliary electrode is connected to the drain electrode and arranged on the same layer as the first and second sub pixel electrodes. An opposite electrode is arranged on the same layer as the gate line and at least partially overlaps with the first auxiliary electrode with at least one insulating layer disposed therebetween.

    摘要翻译: 在薄膜晶体管中,第一和第二薄膜晶体管连接到第N栅极线和第M数据线,第一和第二子像素电极分别连接到第一和第二薄膜晶体管。 第三薄膜晶体管包括连接到第(N + 1)栅极线的栅电极,与栅电极重叠的半导体层,连接到第二子像素电极并与栅电极部分重叠的源极, 漏电极面对源电极。 第一辅助电极连接到漏电极并且设置在与第一和第二子像素电极相同的层上。 相对电极布置在与栅极线相同的层上,并且与第一辅助电极至少部分重叠,并且其间设置有至少一个绝缘层。