公开(公告)号：US08426228B2

公开(公告)日：2013-04-23

申请号：US13181403

申请日：2011-07-12

申请人： Hye-Young Ryu ,  Hyang-Shik Kong ,  Byung-Duk Yang ,  Kyung-Sook Jeon

发明人： Hye-Young Ryu ,  Hyang-Shik Kong ,  Byung-Duk Yang ,  Kyung-Sook Jeon

IPC分类号： H01L29/06 ,  H01L29/08

CPC分类号： G02F1/1362 ,  G02F1/133514 ,  G02F2001/1316 ,  G02F2001/136222 ,  H01L27/124

摘要： Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.

摘要翻译： 通过用无机绝缘层密封滤色器层，从而阻挡了设置在薄膜晶体管（TFT）支撑基板上的滤色器层的材料。 在批量生产制造期间，在沉积滤色器层之后但在沉积无机绝缘层之前采用等离子体表面清洁步骤。 使用低温CVD工艺将无机绝缘层的厚度基本上均匀地沉积在滤色器层上，包括顺应地包括通过滤色器层提供的开口。

公开(公告)号：US20110269254A1

公开(公告)日：2011-11-03

申请号：US13181403

申请日：2011-07-12

申请人： Hye-Young Ryu ,  Hyang-Shik Kong ,  Byung-Duk Yang ,  Kyung-Sook Jeon

发明人： Hye-Young Ryu ,  Hyang-Shik Kong ,  Byung-Duk Yang ,  Kyung-Sook Jeon

IPC分类号： H01L33/08

CPC分类号： G02F1/1362 ,  G02F1/133514 ,  G02F2001/1316 ,  G02F2001/136222 ,  H01L27/124

摘要： Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.

摘要翻译： 通过用无机绝缘层密封滤色器层，从而阻挡了设置在薄膜晶体管（TFT）支撑基板上的滤色器层的材料。 在批量生产制造期间，在沉积滤色器层之后但在沉积无机绝缘层之前采用等离子体表面清洁步骤。 使用低温CVD工艺将无机绝缘层的厚度基本上均匀地沉积在滤色器层上，包括顺应地包括通过滤色器层提供的开口。

公开(公告)号：US07989807B2

公开(公告)日：2011-08-02

申请号：US12195974

申请日：2008-08-21

申请人： Hye-Young Ryu ,  Hyang-Shik Kong ,  Byung-Duk Yang ,  Kyung-Sook Jeon

发明人： Hye-Young Ryu ,  Hyang-Shik Kong ,  Byung-Duk Yang ,  Kyung-Sook Jeon

IPC分类号： H01L29/04

CPC分类号： G02F1/1362 ,  G02F1/133514 ,  G02F2001/1316 ,  G02F2001/136222 ,  H01L27/124

摘要： Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.

摘要翻译： 通过用无机绝缘层密封滤色器层，从而阻挡了设置在薄膜晶体管（TFT）支撑基板上的滤色器层的材料。 在批量生产制造期间，在沉积滤色器层之后但在沉积无机绝缘层之前采用等离子体表面清洁步骤。 使用低温CVD工艺将无机绝缘层的厚度基本上均匀地沉积在滤色器层上，包括顺应地包括通过滤色器层提供的开口。

公开(公告)号：US07655952B2

公开(公告)日：2010-02-02

申请号：US11770012

申请日：2007-06-28

申请人： Hye-Young Ryu ,  Young-Hoon Yoo ,  Jang-Soo Kim ,  Sung-Man Kim ,  Kyung-Wook Kim ,  Hyang-Shik Kong ,  Young-Goo Song

发明人： Hye-Young Ryu ,  Young-Hoon Yoo ,  Jang-Soo Kim ,  Sung-Man Kim ,  Kyung-Wook Kim ,  Hyang-Shik Kong ,  Young-Goo Song

IPC分类号： H01L33/00

CPC分类号： G02F1/136227 ,  G02F2001/136236 ,  H01L27/1244 ,  H01L27/1248

摘要： A thin film transistor array panel is provided, which includes: a gate line, a gate insulating layer, and a semiconductor layer sequentially formed on a substrate; a data line and a drain electrode formed at least on the semiconductor layer; a first passivation layer formed on the data line and the drain electrode and having a first contact hole exposing the drain electrode at least in part; a second passivation layer formed on the first passivation layer and having a second contact hole that is disposed on the first contact hole and has a first bottom edge, placed outside the first contact hole and a second bottom edge placed inside the first contact hole; and a pixel electrode formed on the second passivation layer and connected to the drain electrode through the first and the second contact holes.

摘要翻译： 提供薄膜晶体管阵列面板，其包括：顺序地形成在基板上的栅极线，栅极绝缘层和半导体层; 至少形成在所述半导体层上的数据线和漏电极; 形成在所述数据线和所述漏电极上的第一钝化层，并且具有至少部分地暴露所述漏电极的第一接触孔; 第二钝化层，其形成在所述第一钝化层上，并且具有设置在所述第一接触孔上并且具有放置在所述第一接触孔外部的第一底部边缘的第二接触孔和放置在所述第一接触孔内部的第二底部边缘; 以及形成在所述第二钝化层上并通过所述第一和第二接触孔连接到所述漏电极的像素电极。

公开(公告)号：US07190000B2

公开(公告)日：2007-03-13

申请号：US10915958

申请日：2004-08-11

申请人： Hye-Young Ryu ,  Young-Hoon Yoo ,  Jang-Soo Kim ,  Sung-Man Kim ,  Kyung-Wook Kim ,  Hyang-Shik Kong ,  Young-Goo Song

发明人： Hye-Young Ryu ,  Young-Hoon Yoo ,  Jang-Soo Kim ,  Sung-Man Kim ,  Kyung-Wook Kim ,  Hyang-Shik Kong ,  Young-Goo Song

IPC分类号： H01L29/04

CPC分类号： G02F1/136227 ,  G02F2001/136236 ,  H01L27/1244 ,  H01L27/1248

摘要： A thin film transistor array panel is provided, which includes: a gate line, a gate insulating layer, and a semiconductor layer sequentially formed on a substrate; a data line and a drain electrode formed at least on the semiconductor layer; a first passivation layer formed on the data line and the drain electrode and having a first contact hole exposing the drain electrode at least in part; a second passivation layer formed on the first passivation layer and having a second contact hole that is disposed on the first contact hole and has a first bottom edge placed outside the first contact hole and a second bottom edge placed inside the first contact hole; and a pixel electrode formed on the second passivation layer and connected to the drain electrode through the first and the second contact holes.

摘要翻译： 提供薄膜晶体管阵列面板，其包括：顺序地形成在基板上的栅极线，栅极绝缘层和半导体层; 至少形成在所述半导体层上的数据线和漏电极; 形成在所述数据线和所述漏电极上的第一钝化层，并且具有至少部分地暴露所述漏电极的第一接触孔; 第二钝化层，其形成在所述第一钝化层上，并且具有设置在所述第一接触孔上并具有放置在所述第一接触孔外部的第一底部边缘的第二接触孔和放置在所述第一接触孔内部的第二底部边缘; 以及形成在所述第二钝化层上并通过所述第一和第二接触孔连接到所述漏电极的像素电极。

公开(公告)号：US20060054889A1

公开(公告)日：2006-03-16

申请号：US10942039

申请日：2004-09-16

申请人： Jang-Soo Kim ,  Hyang-Shik Kong ,  Hye-Young Ryu ,  Sung-Man Kim

发明人： Jang-Soo Kim ,  Hyang-Shik Kong ,  Hye-Young Ryu ,  Sung-Man Kim

IPC分类号： H01L29/04

CPC分类号： H01L27/124 ,  G02F1/136213 ,  G02F1/136259 ,  G02F2001/13629 ,  H01L27/1255 ,  H01L27/1288

摘要： A thin film transistor array panel comprising: an insulating substrate; a plurality of gate lines formed on the insulating substrate and including a plurality of gate electrodes and end portions; a plurality of storage electrode lines formed on the insulating substrate; a gate insulating layer formed on the gate lines and storage electrode lines; a semiconductor layer formed on the gate insulating layer; a ohmic contact layer formed on the semiconductor layer; a plurality of data lines formed on the gate insulating layer, intersecting the gate lines to define a display area, and having source electrodes and end portions; a plurality of drain electrodes facing the source electrodes; a passivation layer formed on the data lines and drain electrodes and having contact holes; a plurality of pixel electrodes formed on the passivation layer and connected to the drain electrodes through the contact holes; a storage line connecting bar connecting the storage electrode lines; and a redundant connecting line connecting the storage electrode lines is provided.

摘要翻译： 1.一种薄膜晶体管阵列面板，包括：绝缘基板; 多个栅极线，形成在所述绝缘基板上并且包括多个栅电极和端部; 形成在所述绝缘基板上的多个存储电极线; 形成在栅极线和存储电极线上的栅极绝缘层; 形成在所述栅极绝缘层上的半导体层; 形成在所述半导体层上的欧姆接触层; 形成在所述栅极绝缘层上的多条数据线，与所述栅极线交叉以限定显示区域，并具有源电极和端部; 面对所述源电极的多个漏电极; 形成在数据线和漏电极上并具有接触孔的钝化层; 多个像素电极，形成在钝化层上并通过接触孔连接到漏电极; 连接存储电极线的存储线连接条; 并且提供连接存储电极线的冗余连接线。

公开(公告)号：US07955908B2

公开(公告)日：2011-06-07

申请号：US11674457

申请日：2007-02-13

申请人： Hye-Young Ryu ,  Young-Hoon Yoo ,  Jang-Soo Kim ,  Sung-Man Kim ,  Kyung-Wook Kim ,  Hyang-Shik Kong ,  Young-Goo Song

发明人： Hye-Young Ryu ,  Young-Hoon Yoo ,  Jang-Soo Kim ,  Sung-Man Kim ,  Kyung-Wook Kim ,  Hyang-Shik Kong ,  Young-Goo Song

IPC分类号： H01L21/00

CPC分类号： G02F1/136227 ,  G02F2001/136236 ,  H01L27/1244 ,  H01L27/1248

摘要： A thin film transistor array panel is provided, which includes: a gate line, a gate insulating layer, and a semiconductor layer sequentially formed on a substrate; a data line and a drain electrode formed at least on the semiconductor layer; a first passivation layer formed on the data line and the drain electrode and having a first contact hole exposing the drain electrode at least in part; a second passivation layer formed on the first passivation layer and having a second contact hole that is disposed on the first contact hole and has a first bottom edge placed outside the first contact hole and a second bottom edge placed inside the first contact hole; and a pixel electrode formed on the second passivation layer and connected to the drain electrode through the first and the second contact holes.

摘要翻译： 提供薄膜晶体管阵列面板，其包括：顺序地形成在基板上的栅极线，栅极绝缘层和半导体层; 至少形成在所述半导体层上的数据线和漏电极; 形成在所述数据线和所述漏电极上的第一钝化层，并且具有至少部分地暴露所述漏电极的第一接触孔; 第二钝化层，其形成在所述第一钝化层上，并且具有设置在所述第一接触孔上并具有放置在所述第一接触孔外部的第一底部边缘的第二接触孔和放置在所述第一接触孔内部的第二底部边缘; 以及形成在所述第二钝化层上并通过所述第一和第二接触孔连接到所述漏电极的像素电极。

公开(公告)号：US20080012139A1

公开(公告)日：2008-01-17

申请号：US11770012

申请日：2007-06-28

申请人： Hye-Young Ryu ,  Young-Hoon Yoo ,  Jang-Soo Kim ,  Sung-Man Kim ,  Kyung-Wook Kim ,  Hyang-Shik Kong ,  Young-Goo Song

发明人： Hye-Young Ryu ,  Young-Hoon Yoo ,  Jang-Soo Kim ,  Sung-Man Kim ,  Kyung-Wook Kim ,  Hyang-Shik Kong ,  Young-Goo Song

IPC分类号： H01L23/48

CPC分类号： G02F1/136227 ,  G02F2001/136236 ,  H01L27/1244 ,  H01L27/1248

摘要： A thin film transistor array panel is provided, which includes: a gate line, a gate insulating layer, and a semiconductor layer sequentially formed on a substrate; a data line and a drain electrode formed at least on the semiconductor layer; a first passivation layer formed on the data line and the drain electrode and having a first contact hole exposing the drain electrode at least in part; a second passivation layer formed on the first passivation layer and having a second contact hole that is disposed on the first contact hole and has a first bottom edge, placed outside the first contact hole and a second bottom edge placed inside the first contact hole; and a pixel electrode formed on the second passivation layer and connected to the drain electrode through the first and the second contact holes.

摘要翻译： 提供薄膜晶体管阵列面板，其包括：顺序地形成在基板上的栅极线，栅极绝缘层和半导体层; 至少形成在所述半导体层上的数据线和漏电极; 形成在所述数据线和所述漏电极上的第一钝化层，并且具有至少部分地暴露所述漏电极的第一接触孔; 第二钝化层，其形成在所述第一钝化层上，并且具有设置在所述第一接触孔上并且具有放置在所述第一接触孔外部的第一底部边缘的第二接触孔和放置在所述第一接触孔内部的第二底部边缘; 以及形成在所述第二钝化层上并通过所述第一和第二接触孔连接到所述漏电极的像素电极。

公开(公告)号：US20070134858A1

公开(公告)日：2007-06-14

申请号：US11674457

申请日：2007-02-13

申请人： Hye-Young Ryu ,  Young-Hoon Yoo ,  Jang-Soo Kim ,  Sung-Man Kim ,  Kyung-Wook Kim ,  Hyang-Shik Kong ,  Young-Goo Song

发明人： Hye-Young Ryu ,  Young-Hoon Yoo ,  Jang-Soo Kim ,  Sung-Man Kim ,  Kyung-Wook Kim ,  Hyang-Shik Kong ,  Young-Goo Song

IPC分类号： H01L21/84

CPC分类号： G02F1/136227 ,  G02F2001/136236 ,  H01L27/1244 ,  H01L27/1248

摘要： A thin film transistor array panel is provided, which includes: a gate line, a gate insulating layer, and a semiconductor layer sequentially formed on a substrate; a data line and a drain electrode formed at least on the semiconductor layer; a first passivation layer formed on the data line and the drain electrode and having a first contact hole exposing the drain electrode at least in part; a second passivation layer formed on the first passivation layer and having a second contact hole that is disposed on the first contact hole and has a first bottom edge placed outside the first contact hole and a second bottom edge placed inside the first contact hole; and a pixel electrode formed on the second passivation layer and connected to the drain electrode through the first and the second contact holes.

摘要翻译： 提供薄膜晶体管阵列面板，其包括：顺序地形成在基板上的栅极线，栅极绝缘层和半导体层; 至少形成在所述半导体层上的数据线和漏电极; 形成在所述数据线和所述漏电极上的第一钝化层，并且具有至少部分地暴露所述漏电极的第一接触孔; 第二钝化层，其形成在所述第一钝化层上，并且具有设置在所述第一接触孔上并具有放置在所述第一接触孔外部的第一底部边缘的第二接触孔和放置在所述第一接触孔内部的第二底部边缘; 以及形成在所述第二钝化层上并通过所述第一和第二接触孔连接到所述漏电极的像素电极。

公开(公告)号：US20050110019A1

公开(公告)日：2005-05-26

申请号：US10915958

申请日：2004-08-11

申请人： Hye-Young Ryu ,  Young-Hoon Yoo ,  Jang-Soo Kim ,  Sung-Man Kim ,  Kyung-Wook Kim ,  Hyang-Shik Kong ,  Young-Goo Song

发明人： Hye-Young Ryu ,  Young-Hoon Yoo ,  Jang-Soo Kim ,  Sung-Man Kim ,  Kyung-Wook Kim ,  Hyang-Shik Kong ,  Young-Goo Song

IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04

CPC分类号： G02F1/136227 ,  G02F2001/136236 ,  H01L27/1244 ,  H01L27/1248

摘要： A thin film transistor array panel is provided, which includes: a gate line, a gate insulating layer, and a semiconductor layer sequentially formed on a substrate; a data line and a drain electrode formed at least on the semiconductor layer; a first passivation layer formed on the data line and the drain electrode and having a first contact hole exposing the drain electrode at least in part; a second passivation layer formed on the first passivation layer and having a second contact hole that is disposed on the first contact hole and has a first bottom edge placed outside the first contact hole and a second bottom edge placed inside the first contact hole; and a pixel electrode formed on the second passivation layer and connected to the drain electrode through the first and the second contact holes.

摘要翻译： 提供薄膜晶体管阵列面板，其包括：顺序地形成在基板上的栅极线，栅极绝缘层和半导体层; 至少形成在所述半导体层上的数据线和漏电极; 形成在所述数据线和所述漏电极上的第一钝化层，并且具有至少部分地暴露所述漏电极的第一接触孔; 第二钝化层，其形成在所述第一钝化层上，并且具有设置在所述第一接触孔上并具有放置在所述第一接触孔外部的第一底部边缘的第二接触孔和放置在所述第一接触孔内部的第二底部边缘; 以及形成在所述第二钝化层上并通过所述第一和第二接触孔连接到所述漏电极的像素电极。